JP5612516B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 25
- -1 nitride compound Chemical class 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 256
- 239000010408 film Substances 0.000 description 55
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Description
11 空洞含有層
11a 下地層
11b 繰り返し層
11b1 第1ステップ層
11b2 第2ステップ層
11c 柱状構造体
11d 空洞
12 n層
13 活性層(発光層)
14 p層
15 電極層
16 接着層
20 支持基板
21 接着層
30 n電極
50 成長基板
51 空洞含有層
52 n層
53 空洞
54 GaN結晶
Claims (2)
- (a)成長基板上に、III族窒化物系化合物半導体から構成され、空洞を備える空洞含有層を形成する工程と、
(b)前記空洞含有層上に、n型のIII族窒化物系化合物半導体から構成され、前記空洞を閉じるn層を形成する工程と、
(c)前記n層上に、III族窒化物系化合物半導体から構成される活性層を形成する工程と、
(d)前記活性層上に、p型のIII族窒化物系化合物半導体から構成されるp層を形成する工程と、
(e)前記p層上方に、支持基板を接着する工程と、
(f)前記空洞が形成されている位置を境界として、前記成長基板を剥離する工程と、
(g)前記n層を平坦化する工程と
を有し、
前記工程(b)は、
(b1)前記n層の一部を形成する工程と、
(b2)前記工程(b1)において前記n層を形成する温度よりも高い温度で、前記n層の他の一部を形成する工程と
を含み、
前記空洞の開口率が5%〜40%の範囲内のいずれかの値となった時点で、前記工程(b1)から前記工程(b2)に移行する半導体素子の製造方法。 - 前記工程(b1)においては、995℃〜1005℃の範囲内の温度で、前記n層を形成し、前記工程(b2)においては、1010℃〜1030℃の範囲内の温度で、前記n層を形成する請求項1に記載の半導体素子の製造方法。
Priority Applications (2)
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JP2011054658A JP5612516B2 (ja) | 2011-03-11 | 2011-03-11 | 半導体素子の製造方法 |
US13/416,635 US8530256B2 (en) | 2011-03-11 | 2012-03-09 | Production process for semiconductor device |
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JP2011054658A JP5612516B2 (ja) | 2011-03-11 | 2011-03-11 | 半導体素子の製造方法 |
Publications (2)
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JP2012191066A JP2012191066A (ja) | 2012-10-04 |
JP5612516B2 true JP5612516B2 (ja) | 2014-10-22 |
Family
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JP2011054658A Active JP5612516B2 (ja) | 2011-03-11 | 2011-03-11 | 半導体素子の製造方法 |
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US (1) | US8530256B2 (ja) |
JP (1) | JP5612516B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20120092325A (ko) * | 2011-02-11 | 2012-08-21 | 서울옵토디바이스주식회사 | 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법 |
JP5603812B2 (ja) * | 2011-03-11 | 2014-10-08 | スタンレー電気株式会社 | 半導体素子の製造方法 |
JP5612516B2 (ja) * | 2011-03-11 | 2014-10-22 | スタンレー電気株式会社 | 半導体素子の製造方法 |
FR3009428B1 (fr) * | 2013-08-05 | 2015-08-07 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques |
TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
DE102014105208A1 (de) * | 2014-04-11 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements |
CN105575869A (zh) * | 2014-10-13 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
KR20180069403A (ko) * | 2016-12-15 | 2018-06-25 | 삼성전자주식회사 | 질화 갈륨 기판의 제조 방법 |
JP7053209B2 (ja) * | 2017-10-02 | 2022-04-12 | 株式会社小糸製作所 | 半導体成長用基板、半導体素子、半導体発光素子及び半導体成長用基板の製造方法 |
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DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
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JP4104305B2 (ja) * | 2001-08-07 | 2008-06-18 | 三洋電機株式会社 | 窒化物系半導体チップおよび窒化物系半導体基板 |
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JP2008117922A (ja) * | 2006-11-02 | 2008-05-22 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
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JP5199057B2 (ja) * | 2008-12-24 | 2013-05-15 | スタンレー電気株式会社 | 半導体素子の製造方法、積層構造体の製造方法、半導体ウエハおよび積層構造体。 |
JP5330040B2 (ja) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法 |
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JP5519347B2 (ja) * | 2010-03-16 | 2014-06-11 | スタンレー電気株式会社 | 半導体素子の製造方法 |
TWI562195B (en) * | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
JP5620724B2 (ja) * | 2010-06-22 | 2014-11-05 | スタンレー電気株式会社 | 半導体素子の製造方法、積層構造体の製造方法、半導体ウエハおよび積層構造体。 |
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JP5612516B2 (ja) * | 2011-03-11 | 2014-10-22 | スタンレー電気株式会社 | 半導体素子の製造方法 |
JP5603812B2 (ja) * | 2011-03-11 | 2014-10-08 | スタンレー電気株式会社 | 半導体素子の製造方法 |
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2011
- 2011-03-11 JP JP2011054658A patent/JP5612516B2/ja active Active
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2012
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US20120231608A1 (en) | 2012-09-13 |
US8530256B2 (en) | 2013-09-10 |
JP2012191066A (ja) | 2012-10-04 |
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