KR970705833A - 반도체장치의 제조방법(method for manufacturing semiconductor device) - Google Patents

반도체장치의 제조방법(method for manufacturing semiconductor device) Download PDF

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Publication number
KR970705833A
KR970705833A KR1019970701562A KR19970701562A KR970705833A KR 970705833 A KR970705833 A KR 970705833A KR 1019970701562 A KR1019970701562 A KR 1019970701562A KR 19970701562 A KR19970701562 A KR 19970701562A KR 970705833 A KR970705833 A KR 970705833A
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South Korea
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semiconductor device
manufacturing
electrode
semiconductor
particle beam
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KR1019970701562A
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English (en)
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KR100457037B1 (ko
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카주히사 사카모토
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사토 게니치로
로무 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/08—Infrared
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

본 발명은 반도체기판(1)에 입자선을 조사함으로써 반도체결정의 결정결함을 생성하는 반도체장치의 제조방법으로서, 상기 입자선의 조사를 하기 전의 공정에서 예를 들면 10분 이내로 550~850℃까지 승온하는 급속가열하고, 그 온도에서 예를 들면 1초~60분간 열처리를 실시하는 것을 특징으로 한다. 이와 같이 함으로써, 전자선등의 입자선 조사에 의해 결정결함을 생성하고 캐리어의 수명을 짧게 하여 스위칭속도를 고속화하더라도, 전류증촉율등의 전기적 특성이 저하하는 일이 없고, 스위칭속도와 전기적 특성의 양쪽을 만족하는 반도체 장치를 얻을 수 있다.

Description

반도체장치의 제조방법(METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도 및 제5도는 본 발명의 반도체장치의 제조방법의 일실시예의 제조공정을 도시한 도면.

Claims (8)

  1. 반도체기판에 입자선을 조사함으로써, 반도체 결정의 결정결함을 생성시키는 반도체장치의 제조방법에 있어서, 상기 입자선의 조사를 하기 전의 공정에서 급속가열에 의한 열처리를 실시하는 단계를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 열처리를 550~850℃까지 승온하여 하는 반도체장치의 제조방법.
  3. 제1항에 있어서, 상기 급속가열에 의한 열처리가 10분 이내로 550~850℃까지 승온하고, 해당 승온한 온도의 범위에서 1초~60분간 유지하며, 그 후 급속냉각하는 처리인 반도체 장치의 제조방법.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 급속가열을 광 램프에 의한 가열로 행하는 반도체장치의 제조방법.
  5. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 급속가열을 고주파 조사에 의한 가열로 행하는 반도체장치의 제조방법.
  6. 제1항에 있어서, 상기 급속가열에 의한 열처리공정과, 상기 입자선 조사의 공정과의 사이에 어닐링처리를 필요로 하는 전극형성공정이 마련되어 이루어지는 반도체장치의 제조방법.
  7. (a)반도체기판에 소자형성을 위한 pn접합을 형성하는 단게와, (b)상기 반도체기판에 급속가열에 의한 승온으로 550~850℃의 열처리를 하는 단계와, (c)상기 반도체기판의 표면측에 절연막을 형성한 후, 상기 절연막에 있어서의 상기 소자의 엘리먼트부분에 접촉구멍을 마련하여 전극을 형성하는 단계와, (d)상기 전극과 반도체층과의 옴접촉을 얻기 위한 열처리를 한 후에 입자선의 조사를 하는 단계를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
  8. 제7항에 있어서, 상기 소자형성을 위한 pn접합이 반도체기판을 컬렉터영역으로 하는 베이스 영역 및 에미터영역을 형성하는 것으로서, 상기 전극이 베이스 전극 및 에미터전극인 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970701562A 1995-07-10 1996-07-09 반도체장치의제조방법 KR100457037B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP95-173643 1995-07-10
JP7173643A JPH0927613A (ja) 1995-07-10 1995-07-10 半導体装置の製法
PCT/JP1996/001906 WO1997003458A1 (fr) 1995-07-10 1996-07-09 Procede de fabrication d'un dispositif a semi-conducteurs

Publications (2)

Publication Number Publication Date
KR970705833A true KR970705833A (ko) 1997-10-09
KR100457037B1 KR100457037B1 (ko) 2005-04-08

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Country Link
US (1) US5750443A (ko)
EP (1) EP0780891B1 (ko)
JP (1) JPH0927613A (ko)
KR (1) KR100457037B1 (ko)
CN (1) CN1110074C (ko)
CA (1) CA2199523C (ko)
DE (1) DE69627800T2 (ko)
WO (1) WO1997003458A1 (ko)

Cited By (1)

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KR100841398B1 (ko) * 2007-02-28 2008-06-26 한국원자력연구원 Ｂｒｔ 소자의 전기적 특성 개선 방법 및 그 장치

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US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
KR101669456B1 (ko) 2015-03-11 2016-10-26 황두엽 전신 운동기구
WO2018138756A1 (ja) * 2017-01-24 2018-08-02 新電元工業株式会社 半導体装置の製造方法
JP7032331B2 (ja) * 2017-01-25 2022-03-08 ローム株式会社 半導体装置

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JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
CN1029694C (zh) * 1993-05-22 1995-09-06 浙江大学 含氮直拉硅单晶的热处理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841398B1 (ko) * 2007-02-28 2008-06-26 한국원자력연구원 Ｂｒｔ 소자의 전기적 특성 개선 방법 및 그 장치

Also Published As

Publication number Publication date
CN1110074C (zh) 2003-05-28
EP0780891B1 (en) 2003-05-02
US5750443A (en) 1998-05-12
CA2199523A1 (en) 1997-01-30
EP0780891A1 (en) 1997-06-25
CN1161104A (zh) 1997-10-01
EP0780891A4 (en) 1999-08-18
DE69627800D1 (de) 2003-06-05
DE69627800T2 (de) 2004-03-18
WO1997003458A1 (fr) 1997-01-30
CA2199523C (en) 2000-09-19
JPH0927613A (ja) 1997-01-28
KR100457037B1 (ko) 2005-04-08

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