KR20080031508A - 마이크로일렉트로닉 장치 패키지, 적층 마이크로일렉트로닉장치 패키지, 및 마이크로일렉트로닉 장치 제조 방법 - Google Patents
마이크로일렉트로닉 장치 패키지, 적층 마이크로일렉트로닉장치 패키지, 및 마이크로일렉트로닉 장치 제조 방법 Download PDFInfo
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- KR20080031508A KR20080031508A KR1020087005294A KR20087005294A KR20080031508A KR 20080031508 A KR20080031508 A KR 20080031508A KR 1020087005294 A KR1020087005294 A KR 1020087005294A KR 20087005294 A KR20087005294 A KR 20087005294A KR 20080031508 A KR20080031508 A KR 20080031508A
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 93
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- UAOUIVVJBYDFKD-XKCDOFEDSA-N (1R,9R,10S,11R,12R,15S,18S,21R)-10,11,21-trihydroxy-8,8-dimethyl-14-methylidene-4-(prop-2-enylamino)-20-oxa-5-thia-3-azahexacyclo[9.7.2.112,15.01,9.02,6.012,18]henicosa-2(6),3-dien-13-one Chemical compound C([C@@H]1[C@@H](O)[C@@]23C(C1=C)=O)C[C@H]2[C@]12C(N=C(NCC=C)S4)=C4CC(C)(C)[C@H]1[C@H](O)[C@]3(O)OC2 UAOUIVVJBYDFKD-XKCDOFEDSA-N 0.000 description 6
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Abstract
Description
Claims (62)
- 제1 기판;상기 제1 기판과 전기적으로 연결하는 제1 마이크로일렉트로닉 다이(microelectronic die);상기 제1 기판과 전기적으로 연결하는 제2 기판; 및상기 제2 기판에 전기적으로 연결하는 제2 마이크로일렉트로닉 다이를 포함하는 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 기판의 제2 면을 상기 제2 기판의 제2 면에 연결하는 제1 세트의 와이어; 상기 제1 기판의 제1 면을 상기 제1 마이크로일렉트로닉 다이의 중심 영역에 연결하는 제2 세트의 와이어; 및 상기 제2 기판의 제2 면을 상기 제2 마이크로일렉트로닉 다이에 연결하는 제3 세트의 와이어를 더 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 기판은 상기 제2 기판 보다 큰, 마이크로일렉트로닉 패키지.
- 청구항 3에 있어서, 상기 제1 기판은 와이어 본딩(bonding)을 통해 상기 제2 기판에 전기적으로 연결되는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 마이크로일렉트로닉 다이는 보드-온-칩 패키지 구조를 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제2 마이크로일렉트로닉 다이는 보드-온-칩 패키지 구조를 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제2 기판은, 2개 이상의 패키지 조립체의 적층 조립을 가능하게 하기 위해, 노출된 격자 어레이의 전기 접점을 갖는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 및 제2 마이크로일렉트로닉 다이는, 복수의 활성 단자를 포함하는 활성면 및 배면(back side)을 각각 가지며, 상기 제1 마이크로일렉트로닉 다이의 배면은 상기 제2 마이크로일렉트로닉 다이의 배면에 부착되는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 기판은 제1 면 및 제2 면을 가지며, 상기 제2 면은 상기 제1 마이크로일렉트로닉 다이에 인접하고, 상기 기판의 제1 면은 복수의 접점을 가지며, 상기 제1 기판은 관통 구멍을 가지며, 그리고 상기 기판의 제1 면상의 상기 복수의 접점으로부터 상기 제1 마이크로일렉트로닉 다이로 연장하는 와 이어를 더 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 9에 있어서, 상기 제2 기판이 제1 면 및 제2 면을 가지며, 상기 제1 면이 상기 제2 마이크로일렉트로닉 다이에 인접하고, 상기 제2 기판이 관통 구멍을 가지며, 그리고 상기 제2 다이 상의 복수의 접점으로부터 상기 제2 기판의 제2 면으로 연장하는 와이어를 더 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 2에 있어서, 상기 제1, 제2, 및 제3 세트의 와이어를 봉입하는 몰드 컴파운드(mold compound)를 더 포함하는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 다이는 상기 제1 기판에 인접하고, 상기 제2 다이는 상기 제2 기판에 인접하며, 상기 제1 다이는 상기 제2 다이에 인접하는, 마이크로일렉트로닉 패키지.
- 청구항 1에 있어서, 상기 제1 다이는, 상기 제1 기판의 제2 면과 접촉하여 상기 제1 다이의 활성면 상의 복수의 전기 단자들을 통해 상기 제1 다이에 전기적으로 연결되는, 마이크로일렉트로닉 패키지.
- 제1 기판; 상기 제1 기판과 전기적으로 연결하는 제1 마이크로일렉트로닉 다이; 상기 제1 기판과 전기적으로 연결하는 제2 기판; 및 상기 제2 기판과 전기적으 로 연결하는 제2 마이크로일렉트로닉 다이를 포함하는 제1 마이크로일렉트로닉 패키지; 및제3 기판; 상기 제3 기판과 전기적으로 연결하는 제3 마이크로일렉트로닉 다이; 및 상기 제2 및 제3 기판 사이의 복수의 전기적인 연결을 포함하는 제2 마이크로일렉트로닉 패키지를 포함하는 적층 마이크로일렉트로닉 패키지 조립체.
- 청구항 14에 있어서,상기 제1 마이크로일렉트로닉 패키지 조립체와 관련되는 제1, 제2, 및 제3 세트의 와이어로서, 상기 제1 세트의 와이어가 상기 제1 기판의 제2 면을 상기 제2 기판의 제2 면에 연결하고; 상기 제2 세트의 와이어가 상기 제1 기판의 제1 면을 상기 제1 마이크로일렉트로닉 다이의 중심 영역에 연결하며; 상기 제3 세트의 와이어가 상기 제2 기판의 제2 면을 상기 제2 마이크로일렉트로닉 다이에 연결하는, 제1, 제2, 및 제3 세트의 와이어;상기 제3 기판과 전기적으로 연결하는 제4 기판; 및상기 제2 마이크로일렉트로닉 패키지 조립체와 관련되는 제4, 제5, 및 제6 세트의 와이어로서, 상기 제4 세트의 와이어는 상기 제3 기판의 제2 면을 상기 제4 기판의 제2 면에 연결하고; 상기 제5 세트의 와이어는 상기 제3 기판의 제1 면을 상기 제3 마이크로일렉트로닉 다이의 중심 영역에 연결하며; 상기 제6 세트의 와이어는 상기 제4 기판의 제2 면을 상기 제4 마이크로일렉트로닉 다이에 연결하는, 제4, 제5, 및 제6 세트의 와이어를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조 립체.
- 청구항 14에 있어서, 상기 제1 및 제2 마이크로일렉트로닉 패키지 조립체 사이의 상기 복수의 전기적인 연결은 상기 제2 및 제3 기판 사이의 땜납 볼을 포함하는, 적층 마이크로일렉트로닉 패키지 조립체.
- 청구항 14에 있어서, 상기 제1 기판은 상기 제2 기판 보다 큰, 적층 마이크로일렉트로닉 패키지 조립체.
- 제1 기판 상의 제1 다이;제2 다이 상의 제2 기판;상기 제1 및 제2 다이 사이의 스페이서(spacer);상기 제1 다이를 상기 제1 기판에 연결하는 제1 세트의 와이어;상기 제2 기판을 상기 제1 기판에 연결하는 제2 세트의 와이어를 포함하는 적층 가능한 다중-전자 다이 패키지.
- 청구항 18에 있어서, 상기 제2 다이를 상기 제2 기판의 구멍을 통해서 상기 제2 기판으로 연결하는 제3 세트의 와이어를 더 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 18에 있어서, 상기 제1 다이 및 제1 기판은 칩-온-보드 패키지 구조를 포함하며, 상기 제2 다이 및 상기 제2 기판은 보드-온-칩 패키지 구조를 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 18에 있어서, 상기 제1 기판은 상기 제2 기판 보다 큰, 적층 가능한 다중-전자 다이 패키지.
- 제1 기판;상기 제1 기판 상의 제1 다이로서, 상기 제1 기판으로의 전기적인 연결을 만드는 제1 다이;상기 제1 다이 상에 부착되는 제2 다이;상기 제2 다이 상의 제2 기판;상기 제1 기판을 상기 제2 기판에 연결하는 제1 세트의 와이어; 및상기 제2 기판을 상기 제2 다이에 연결하는 제2 세트의 와이어를 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서,상기 제1 기판 및 상기 제1 다이는 플립 칩 패키지 구조를 형성하며, 상기 제2 기판 및 상기 제2 다이는 보드-온-칩 패키지 구조를 형성하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서, 상기 제1 기판 상에 적층된 다이 패키지의 기판에 전기적으로 연결하도록 구성된 상기 제1 기판의 제1 면상의 제1 어레이의 접점을 더 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 24에 있어서, 상기 제1 세트의 와이어는 상기 제1 기판의 제2 면을 상기 제2 기판의 제2 면으로 연결하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서, 상기 제1 기판은 상기 제2 기판보다 큰, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서, 상기 제2 기판은 상기 제1 기판보다 큰, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서, 상기 제1 및 제2 기판의 적어도 일부를 덮는 케이싱(casing)을 더 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 28에 있어서, 상기 케이싱은, 다른 패키지의 기판과 연결하도록 구성된 전기 접점을 갖는 상기 제2 기판의 영역을 노출하는 구멍을 갖는, 적층 가능한 다중-전자 다이 패키지.
- 청구항 22에 있어서, 상기 제1 및 제2 세트의 와이어는 와이어 본드를 포함하는, 적층 가능한 다중-전자 다이 패키지.
- 제1 다이를 제1 기판에 부착시키는 단계;제2 다이를 상기 제1 다이에 부착시키는 단계;제2 기판을 상기 제2 다이에 부착시키는 단계;상기 제1 기판과 상기 제2 기판의 사이에 제1 세트의 전기적인 연결을 만드는 단계;상기 제1 다이와 상기 제1 기판의 사이에 제2 세트의 전기적인 연결을 만드는 단계; 및상기 제2 다이와 상기 제2 기판의 사이에 제3 세트의 전기적인 연결을 만드는 단계를 포함하는 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제1, 제2, 및 제3 세트의 전기적인 연결들은 와이어-본드 연결인, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제2 세트의 전기적인 연결은 상기 제1 기판의 구멍을 통해 연장하는 와이어를 통해 만들어지는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 33에 있어서, 상기 제3 세트의 전기적인 연결은 상기 제2 기판의 구멍을 통해 연장하는 와이어를 통해 만들어지는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 32에 있어서, 상기 제1, 제2, 및 제3 세트의 전기적인 연결을 몰드 컴파운드로 밀봉하는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 32에 있어서, 상기 제1 세트의 와이어 본드는 상기 제1 기판의 제2 면상의 접점을 상기 제2 기판의 제2 면상의 접점에 연결하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 32에 있어서, 상기 제2 세트의 와이어 본드는 상기 제1 기판의 제1 면상의 접점을 상기 제1 다이의 제1 면상의 단자에 연결하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 32에 있어서, 상기 제3 세트의 와이어 본드는 상기 기판의 제2 면상의 접점을 상기 제2 다이의 제2 면상의 접점에 연결하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제1 기판은 상기 제2 기판보다 큰, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제1 다이는 보드-온-칩 패키지 구조를 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제2 마이크로일렉트로닉 다이는 보드-온-칩 패키지 구조를 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 35에 있어서, 상기 마이크로일렉트로닉 패키지가 다른 마이크로일렉트로닉 패키지 상에 적층될 수 있게 하기 위해, 격자 어레이의 전기 접점을 노출된 채 두도록 상기 제2 기판의 영역으로부터 상기 몰드 컴파운드를 제외시키는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 35에 있어서, 상기 마이크로일렉트로닉 패키지가 다른 마이크로일렉트로닉 패키지 상에 적층될 수 있게 하기 위해, 격자 어레이의 전기 접점을 노출된 채 두도록 상기 제1 기판의 영역으로부터 상기 몰드 컴파운드를 제외시키는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 31에 있어서, 상기 제1 다이의 배면을 접착제를 통해서 상기 제2 다 이의 배면에 부착시키는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 제1 마이크로일렉트로닉 패키지를 만드는 단계로서,제1 다이를 제1 기판에 부착시키는 단계;제2 다이를 상기 제1 다이에 부착시키는 단계;제2 기판을 상기 제2 다이에 부착시키는 단계;상기 제1 기판과 상기 제2 기판의 사이에 제1 세트의 전기적인 연결 을 만드는 단계;상기 제1 다이와 상기 제1 기판의 사이에 제2 세트의 전기적인 연결 을 만드는 단계; 및상기 제2 다이와 상기 제2 기판의 사이에 제3 세트의 전기적인 연결 을 만드는 단계에 의해 제1 마이크로일렉트로닉 패키지를 만드는 단계; 및제2 마이크로일렉트로닉 패키지를 상기 제1 마이크로일렉트로닉 패키지 조립체에 부착시키는 단계를 포함하는 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제2 마이크로일렉트로닉 패키지의 접점을 상기 제1 기판 상의 접점에 연결시키는 것에 의해 상기 제1 및 제2 마이크로일렉트로닉 패키지들 사이에 전기적인 연결을 만드는 단계를 더 포함하는, 적층 마이크로일렉트 로닉 패키지 조립체 제조 방법.
- 청구항 46에 있어서, 상기 제1 및 제2 마이크로일렉트로닉 패키지들 사이에, 땜납 요소를 통해서 상기 전기적인 연결을 만드는 단계를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제2 마이크로일렉트로닉 패키지를 상기 제1 마이크로일렉트로닉 패키지에 부착하기 전에 상기 제1 및 제2 마이크로일렉트로닉 패키지 중 적어도 하나를 검사하는 단계를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제2 세트의 전기적인 연결은 상기 제1 기판의 구멍을 통해 연장하는 와이어 본드를 통해 만들어지는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제3 세트의 전기적인 연결은 상기 제2 기판의 구멍을 통해 연장하는 와이어 본드를 통해 만들어지는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제2 마이크로일렉트로닉 패키지 조립체를 상기 제 1 마이크로일렉트로닉 패키지에 부착하기 전에, 상기 제1, 제2, 및 제3 세트의 전기적인 연결을 몰드 컴파운드로 밀봉하는 단계를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제1 기판은 상기 제2 기판보다 크며, 상기 제1 기판의 제2 면의 접점을 상기 제2 기판의 제2 면상의 접점에 와이어 본딩하는 것에 의해 상기 제1 세트의 전기 연결을 만드는 단계를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 46에 있어서, 제3 마이크로일렉트로닉 패키지를 상기 제1 마이크로일렉트로닉 패키지에 부착시키는 단계와, 상기 제3 마이크로일렉트로닉 패키지의 접점을 상기 제2 기판의 접점에 연결시키는 것에 의해 상기 제1 및 제3 마이크로일렉트로닉 패키지 사이에 전기적인 연결을 만드는 단계를 더 포함하는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 46에 있어서, 상기 제1 기판 상의 상기 접점은 상기 제1 기판의 에지로부터 떨어져 위치되는, 적층 마이크로일렉트로닉 패키지 조립체 제조 방법.
- 청구항 45에 있어서, 상기 제2 마이크로일렉트로닉 패키지는 상기 제1 마이크로일렉트로닉 패키지 조립체와 동일한 것인, 적층 마이크로일렉트로닉 패키지 조 립체 제조 방법.
- 제1 다이를 제1 기판에 부착시키는 단계;스페이서를 상기 제1 다이에 부착시키는 단계;제2 다이를 상기 스페이서에 부착시키는 단계;제2 기판을 상기 제2 다이에 부착시키는 단계;상기 제1 기판과 상기 제2 기판의 사이에 제1 세트의 전기적인 연결을 만드는 단계;상기 제1 다이와 상기 제1 기판의 사이에 제2 세트의 전기적인 연결을 만드는 단계; 및상기 제2 다이와 상기 제2 기판의 사이에 제3 세트의 전기적인 연결을 만드는 단계를 포함하는 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 56에 있어서, 상기 제1 다이의 배면을 상기 제1 기판의 제2 면에 부착시키는 단계, 및 상기 제1 다이의 활성면 상의 단자와 상기 제1 기판의 상기 제2 면 상의 접점 사이에 상기 제2 세트의 전기적인 연결을 만드는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 56에 있어서, 상기 제2 기판의 구멍을 통해 연장하는 와이어를 통해서, 상기 제2 다이의 활성면 상의 중심에 일반적으로 위치하는 단자와 상기 제2 기 판의 제2 면 상의 접점 사이에 상기 제3 세트의 전기적인 연결을 만드는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 청구항 56에 있어서, 제2 마이크로일렉트로닉 패키지를 상기 제1 기판 또는 상기 제2 기판에 부착시키는 단계를 더 포함하는, 마이크로일렉트로닉 패키지 제조 방법.
- 제1 기판 상에 제1 다이를 부착시키는 단계로서, 상기 제1 다이는 상기 제1 기판 상의 패드에 물리적으로 접촉하는 전기적인 커플러를 갖는, 단계;상기 제1 다이 상에 제2 다이를 부착시키는 단계;상기 제2 다이 상에 제2 기판을 부착시키는 단계;상기 제1 기판 상의 제1 접점을 상기 제2 기판 상의 제1 접점에 와이어 본딩하는 단계; 및상기 제2 다이 상의 단자를 상기 제2 기판 상의 제2 접점에 연결하는 와이어 본딩을 하는 단계를 포함하는 적층 가능한 다중-전자 패키지 제조 방법.
- 청구항 60에 있어서, 상기 제1 기판 상의 상기 제1 접점은 상기 제1 기판의 에지에 인접되고, 상기 제2 기판 상의 상기 제1 접점은 상기 제2 기판의 에지에 인접되는, 적층 가능한 다중-전자 패키지 제조 방법.
- 청구항 60에 있어서, 상기 제2 기판 상의 상기 제2 접점은 상기 제2 기판의 구멍에 인접되는, 적층 가능한 다중-전자 패키지 제조 방법.
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US11/218,028 | 2005-08-31 | ||
US11/218,028 US7504284B2 (en) | 2005-08-26 | 2005-08-31 | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
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Families Citing this family (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101053079A (zh) | 2004-11-03 | 2007-10-10 | 德塞拉股份有限公司 | 堆叠式封装的改进 |
SG130055A1 (en) | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
SG130066A1 (en) | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US8354726B2 (en) * | 2006-05-19 | 2013-01-15 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
KR100891516B1 (ko) * | 2006-08-31 | 2009-04-06 | 주식회사 하이닉스반도체 | 적층 가능한 에프비지에이 타입 반도체 패키지와 이를이용한 적층 패키지 |
US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
EP2092322B1 (en) | 2006-12-14 | 2016-02-17 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale fet arrays |
US8349167B2 (en) | 2006-12-14 | 2013-01-08 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
US11339430B2 (en) | 2007-07-10 | 2022-05-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US8262900B2 (en) * | 2006-12-14 | 2012-09-11 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US7952195B2 (en) | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
KR101409839B1 (ko) * | 2007-05-23 | 2014-06-26 | 삼성전자주식회사 | 반도체 패키지 |
CN101809739B (zh) | 2007-07-27 | 2014-08-20 | 泰塞拉公司 | 具有后应用的衬垫延长部分的重构晶片堆封装 |
JP2009038142A (ja) * | 2007-07-31 | 2009-02-19 | Elpida Memory Inc | 半導体積層パッケージ |
CN101861646B (zh) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | 利用再生晶圆的堆叠封装 |
US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
TW200917431A (en) * | 2007-10-05 | 2009-04-16 | Advanced Semiconductor Eng | Stacked-type chip package structure and method of fabricating the same |
US8129832B2 (en) * | 2007-10-29 | 2012-03-06 | Stats Chippac Ltd. | Mountable integrated circuit package system with substrate having a conductor-free recess |
US20090127715A1 (en) * | 2007-11-15 | 2009-05-21 | Shin Hangil | Mountable integrated circuit package system with protrusion |
US7985628B2 (en) * | 2007-12-12 | 2011-07-26 | Stats Chippac Ltd. | Integrated circuit package system with interconnect lock |
US8084849B2 (en) * | 2007-12-12 | 2011-12-27 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking |
US7781261B2 (en) * | 2007-12-12 | 2010-08-24 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking and anti-flash structure |
US8536692B2 (en) * | 2007-12-12 | 2013-09-17 | Stats Chippac Ltd. | Mountable integrated circuit package system with mountable integrated circuit die |
US8247893B2 (en) * | 2007-12-27 | 2012-08-21 | Stats Chippac Ltd. | Mountable integrated circuit package system with intra-stack encapsulation |
US7800212B2 (en) * | 2007-12-27 | 2010-09-21 | Stats Chippac Ltd. | Mountable integrated circuit package system with stacking interposer |
US9236319B2 (en) * | 2008-02-29 | 2016-01-12 | Stats Chippac Ltd. | Stacked integrated circuit package system |
US8068328B2 (en) * | 2008-03-12 | 2011-11-29 | Intel Corporation | Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same |
SG155793A1 (en) * | 2008-03-19 | 2009-10-29 | Micron Technology Inc | Upgradeable and repairable semiconductor packages and methods |
TWI358816B (en) * | 2008-03-19 | 2012-02-21 | Chipmos Technologies Inc | Chip package structure |
US20090243069A1 (en) * | 2008-03-26 | 2009-10-01 | Zigmund Ramirez Camacho | Integrated circuit package system with redistribution |
CN102067310B (zh) | 2008-06-16 | 2013-08-21 | 泰塞拉公司 | 带有边缘触头的晶片级芯片规模封装的堆叠及其制造方法 |
WO2010008480A2 (en) | 2008-06-25 | 2010-01-21 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes using large scale fet arrays |
US9293385B2 (en) * | 2008-07-30 | 2016-03-22 | Stats Chippac Ltd. | RDL patterning with package on package system |
US7750455B2 (en) * | 2008-08-08 | 2010-07-06 | Stats Chippac Ltd. | Triple tier package on package system |
US20100301398A1 (en) | 2009-05-29 | 2010-12-02 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
US20100137143A1 (en) | 2008-10-22 | 2010-06-03 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
US8106498B2 (en) * | 2009-03-05 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with a dual board-on-chip structure and method of manufacture thereof |
US8466542B2 (en) | 2009-03-13 | 2013-06-18 | Tessera, Inc. | Stacked microelectronic assemblies having vias extending through bond pads |
US20120261274A1 (en) | 2009-05-29 | 2012-10-18 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US8776573B2 (en) | 2009-05-29 | 2014-07-15 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US8743561B2 (en) * | 2009-08-26 | 2014-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer-level molded structure for package assembly |
TWI411066B (zh) * | 2009-09-08 | 2013-10-01 | Advanced Semiconductor Eng | 封裝結構以及封裝製程 |
KR101123804B1 (ko) * | 2009-11-20 | 2012-03-12 | 주식회사 하이닉스반도체 | 반도체 칩 및 이를 갖는 적층 반도체 패키지 |
US9164070B2 (en) * | 2010-06-30 | 2015-10-20 | Life Technologies Corporation | Column adc |
AU2011226767B1 (en) | 2010-06-30 | 2011-11-10 | Life Technologies Corporation | Ion-sensing charge-accumulation circuits and methods |
EP2588850B1 (en) | 2010-06-30 | 2016-12-28 | Life Technologies Corporation | Method for dry testing isfet arrays |
US11307166B2 (en) | 2010-07-01 | 2022-04-19 | Life Technologies Corporation | Column ADC |
TWI527245B (zh) | 2010-07-03 | 2016-03-21 | 生命技術公司 | 具有微摻雜汲極之化學感測器 |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
WO2012036679A1 (en) | 2010-09-15 | 2012-03-22 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
CN105911126B (zh) | 2010-09-24 | 2018-12-18 | 生命科技公司 | 匹配的晶体管对电路 |
US8553420B2 (en) | 2010-10-19 | 2013-10-08 | Tessera, Inc. | Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics |
KR101796116B1 (ko) | 2010-10-20 | 2017-11-10 | 삼성전자 주식회사 | 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법 |
US8409917B2 (en) | 2011-03-22 | 2013-04-02 | Stats Chippac Ltd. | Integrated circuit packaging system with an interposer substrate and method of manufacture thereof |
US8970028B2 (en) | 2011-12-29 | 2015-03-03 | Invensas Corporation | Embedded heat spreader for package with multiple microelectronic elements and face-down connection |
US8338963B2 (en) | 2011-04-21 | 2012-12-25 | Tessera, Inc. | Multiple die face-down stacking for two or more die |
US9013033B2 (en) | 2011-04-21 | 2015-04-21 | Tessera, Inc. | Multiple die face-down stacking for two or more die |
US8928153B2 (en) | 2011-04-21 | 2015-01-06 | Tessera, Inc. | Flip-chip, face-up and face-down centerbond memory wirebond assemblies |
US8304881B1 (en) | 2011-04-21 | 2012-11-06 | Tessera, Inc. | Flip-chip, face-up and face-down wirebond combination package |
US8633576B2 (en) | 2011-04-21 | 2014-01-21 | Tessera, Inc. | Stacked chip-on-board module with edge connector |
US8952516B2 (en) | 2011-04-21 | 2015-02-10 | Tessera, Inc. | Multiple die stacking for two or more die |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8530277B2 (en) * | 2011-06-16 | 2013-09-10 | Stats Chippac Ltd. | Integrated circuit packaging system with package on package support and method of manufacture thereof |
KR20130030935A (ko) * | 2011-09-20 | 2013-03-28 | 에스케이하이닉스 주식회사 | 반도체 장치 |
WO2013052372A2 (en) * | 2011-10-03 | 2013-04-11 | Invensas Corporation | Stub minimization for multi-die wirebond assemblies with parallel windows |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US9970984B2 (en) | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US8786331B2 (en) | 2012-05-29 | 2014-07-22 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9080968B2 (en) | 2013-01-04 | 2015-07-14 | Life Technologies Corporation | Methods and systems for point of use removal of sacrificial material |
US9841398B2 (en) | 2013-01-08 | 2017-12-12 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
US9123600B2 (en) * | 2013-02-27 | 2015-09-01 | Invensas Corporation | Microelectronic package with consolidated chip structures |
US8963216B2 (en) | 2013-03-13 | 2015-02-24 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
JP6581074B2 (ja) | 2013-03-15 | 2019-09-25 | ライフ テクノロジーズ コーポレーション | 一貫性のあるセンサ表面積を有する化学センサ |
US9835585B2 (en) | 2013-03-15 | 2017-12-05 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
EP2972281B1 (en) | 2013-03-15 | 2023-07-26 | Life Technologies Corporation | Chemical device with thin conductive element |
JP2016510895A (ja) | 2013-03-15 | 2016-04-11 | ライフ テクノロジーズ コーポレーション | 一貫性のあるセンサ表面積を有する化学センサ |
US9116117B2 (en) | 2013-03-15 | 2015-08-25 | Life Technologies Corporation | Chemical sensor with sidewall sensor surface |
US20140336063A1 (en) | 2013-05-09 | 2014-11-13 | Life Technologies Corporation | Windowed Sequencing |
US10458942B2 (en) | 2013-06-10 | 2019-10-29 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
US9082766B2 (en) * | 2013-08-06 | 2015-07-14 | Google Technology Holdings LLC | Method to enhance reliability of through mold via TMVA part on part POP devices |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
TWI684004B (zh) | 2014-12-18 | 2020-02-01 | 美商生命技術公司 | 用於使用大規模fet陣列量測分析物之方法及設備 |
TWI832669B (zh) | 2014-12-18 | 2024-02-11 | 美商生命技術公司 | 具有傳輸器組態的高資料速率積體電路 |
US10077472B2 (en) | 2014-12-18 | 2018-09-18 | Life Technologies Corporation | High data rate integrated circuit with power management |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761562B2 (en) | 2015-05-06 | 2017-09-12 | Micron Technology, Inc. | Semiconductor device packages including a controller element |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US9871019B2 (en) | 2015-07-17 | 2018-01-16 | Invensas Corporation | Flipped die stack assemblies with leadframe interconnects |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
KR102437774B1 (ko) | 2015-11-17 | 2022-08-30 | 삼성전자주식회사 | 인쇄 회로 기판 |
US9911718B2 (en) | 2015-11-17 | 2018-03-06 | Invensas Corporation | ‘RDL-First’ packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US10566310B2 (en) | 2016-04-11 | 2020-02-18 | Invensas Corporation | Microelectronic packages having stacked die and wire bond interconnects |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
KR101942747B1 (ko) | 2017-12-15 | 2019-01-28 | 삼성전기 주식회사 | 팬-아웃 반도체 패키지 |
JP6759464B2 (ja) * | 2018-03-20 | 2020-09-23 | 株式会社東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
US11127716B2 (en) | 2018-04-12 | 2021-09-21 | Analog Devices International Unlimited Company | Mounting structures for integrated device packages |
US11393698B2 (en) * | 2020-12-18 | 2022-07-19 | STATS ChipPAC Pte. Ltd. | Mask design for improved attach position |
Family Cites Families (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US729110A (en) * | 1903-02-17 | 1903-05-26 | Charles P Young | Rural-delivery letter-box. |
JPH025553A (ja) | 1988-06-24 | 1990-01-10 | Fujitsu Ltd | 半導体装置 |
JPH0289852U (ko) | 1988-12-27 | 1990-07-17 | ||
JPH03159146A (ja) | 1989-11-16 | 1991-07-09 | Tokyo Electron Ltd | プロービングカード |
US5258330A (en) | 1990-09-24 | 1993-11-02 | Tessera, Inc. | Semiconductor chip assemblies with fan-in leads |
US5946553A (en) * | 1991-06-04 | 1999-08-31 | Micron Technology, Inc. | Process for manufacturing a semiconductor package with bi-substrate die |
US5252857A (en) * | 1991-08-05 | 1993-10-12 | International Business Machines Corporation | Stacked DCA memory chips |
KR940008327B1 (ko) * | 1991-10-10 | 1994-09-12 | 삼성전자 주식회사 | 반도체 패키지 및 그 실장방법 |
US5128831A (en) * | 1991-10-31 | 1992-07-07 | Micron Technology, Inc. | High-density electronic package comprising stacked sub-modules which are electrically interconnected by solder-filled vias |
TW236744B (ko) | 1994-03-23 | 1994-12-21 | Thomson Consumer Electronics | |
US6013948A (en) * | 1995-11-27 | 2000-01-11 | Micron Technology, Inc. | Stackable chip scale semiconductor package with mating contacts on opposed surfaces |
US6072236A (en) * | 1996-03-07 | 2000-06-06 | Micron Technology, Inc. | Micromachined chip scale package |
JP2806357B2 (ja) * | 1996-04-18 | 1998-09-30 | 日本電気株式会社 | スタックモジュール |
DE19626126C2 (de) * | 1996-06-28 | 1998-04-16 | Fraunhofer Ges Forschung | Verfahren zur Ausbildung einer räumlichen Chipanordnung und räumliche Chipanordung |
US5994166A (en) * | 1997-03-10 | 1999-11-30 | Micron Technology, Inc. | Method of constructing stacked packages |
KR100246333B1 (ko) * | 1997-03-14 | 2000-03-15 | 김영환 | 비 지 에이 패키지 및 그 제조방법 |
US5986209A (en) * | 1997-07-09 | 1999-11-16 | Micron Technology, Inc. | Package stack via bottom leaded plastic (BLP) packaging |
US6885092B1 (en) * | 1997-09-29 | 2005-04-26 | Hitachi, Ltd. | Semiconductor device and a memory system including a plurality of IC chips in a common package |
JP3937265B2 (ja) * | 1997-09-29 | 2007-06-27 | エルピーダメモリ株式会社 | 半導体装置 |
US6055778A (en) * | 1997-12-01 | 2000-05-02 | Aoyama Seisakusho Co., Ltd. | Guide slider for window regulator |
US6117382A (en) | 1998-02-05 | 2000-09-12 | Micron Technology, Inc. | Method for encasing array packages |
US6175149B1 (en) * | 1998-02-13 | 2001-01-16 | Micron Technology, Inc. | Mounting multiple semiconductor dies in a package |
US6297547B1 (en) * | 1998-02-13 | 2001-10-02 | Micron Technology Inc. | Mounting multiple semiconductor dies in a package |
US6429528B1 (en) * | 1998-02-27 | 2002-08-06 | Micron Technology, Inc. | Multichip semiconductor package |
US6028365A (en) * | 1998-03-30 | 2000-02-22 | Micron Technology, Inc. | Integrated circuit package and method of fabrication |
US6072233A (en) * | 1998-05-04 | 2000-06-06 | Micron Technology, Inc. | Stackable ball grid array package |
US5990566A (en) * | 1998-05-20 | 1999-11-23 | Micron Technology, Inc. | High density semiconductor package |
US6020629A (en) * | 1998-06-05 | 2000-02-01 | Micron Technology, Inc. | Stacked semiconductor package and method of fabrication |
JP4343286B2 (ja) * | 1998-07-10 | 2009-10-14 | シチズンホールディングス株式会社 | 半導体装置の製造方法 |
US6153929A (en) * | 1998-08-21 | 2000-11-28 | Micron Technology, Inc. | Low profile multi-IC package connector |
KR100304959B1 (ko) * | 1998-10-21 | 2001-09-24 | 김영환 | 칩 적층형 반도체 패키지 및 그 제조방법 |
JP3395164B2 (ja) | 1998-11-05 | 2003-04-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体装置 |
JP2000228468A (ja) | 1999-02-05 | 2000-08-15 | Mitsubishi Electric Corp | 半導体チップ及び半導体装置 |
US6294839B1 (en) * | 1999-08-30 | 2001-09-25 | Micron Technology, Inc. | Apparatus and methods of packaging and testing die |
US6212767B1 (en) * | 1999-08-31 | 2001-04-10 | Micron Technology, Inc. | Assembling a stacked die package |
US6303981B1 (en) * | 1999-09-01 | 2001-10-16 | Micron Technology, Inc. | Semiconductor package having stacked dice and leadframes and method of fabrication |
JP2001127088A (ja) * | 1999-10-27 | 2001-05-11 | Mitsubishi Electric Corp | 半導体装置 |
JP3456462B2 (ja) * | 2000-02-28 | 2003-10-14 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2001257307A (ja) | 2000-03-09 | 2001-09-21 | Sharp Corp | 半導体装置 |
DE10023823A1 (de) * | 2000-05-15 | 2001-12-06 | Infineon Technologies Ag | Multichip-Gehäuse |
US6560117B2 (en) * | 2000-06-28 | 2003-05-06 | Micron Technology, Inc. | Packaged microelectronic die assemblies and methods of manufacture |
US6552910B1 (en) * | 2000-06-28 | 2003-04-22 | Micron Technology, Inc. | Stacked-die assemblies with a plurality of microelectronic devices and methods of manufacture |
JP2002033441A (ja) * | 2000-07-14 | 2002-01-31 | Mitsubishi Electric Corp | 半導体装置 |
TW459361B (en) * | 2000-07-17 | 2001-10-11 | Siliconware Precision Industries Co Ltd | Three-dimensional multiple stacked-die packaging structure |
KR100379600B1 (ko) * | 2000-08-14 | 2003-04-10 | 삼성전자주식회사 | 듀얼 칩 패키지의 제조 방법 |
US6607937B1 (en) * | 2000-08-23 | 2003-08-19 | Micron Technology, Inc. | Stacked microelectronic dies and methods for stacking microelectronic dies |
JP4570809B2 (ja) * | 2000-09-04 | 2010-10-27 | 富士通セミコンダクター株式会社 | 積層型半導体装置及びその製造方法 |
JP3499202B2 (ja) * | 2000-10-16 | 2004-02-23 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JP2002134650A (ja) * | 2000-10-23 | 2002-05-10 | Rohm Co Ltd | 半導体装置およびその製造方法 |
US6418033B1 (en) | 2000-11-16 | 2002-07-09 | Unitive Electronics, Inc. | Microelectronic packages in which second microelectronic substrates are oriented relative to first microelectronic substrates at acute angles |
US6664143B2 (en) | 2000-11-22 | 2003-12-16 | North Carolina State University | Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls |
US6506681B2 (en) * | 2000-12-06 | 2003-01-14 | Micron Technology, Inc. | Thin flip—chip method |
JP3420748B2 (ja) * | 2000-12-14 | 2003-06-30 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
TW565925B (en) * | 2000-12-14 | 2003-12-11 | Vanguard Int Semiconduct Corp | Multi-chip semiconductor package structure process |
JP3683179B2 (ja) * | 2000-12-26 | 2005-08-17 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2002208656A (ja) | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置 |
KR100401020B1 (ko) * | 2001-03-09 | 2003-10-08 | 앰코 테크놀로지 코리아 주식회사 | 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지 |
SG106054A1 (en) | 2001-04-17 | 2004-09-30 | Micron Technology Inc | Method and apparatus for package reduction in stacked chip and board assemblies |
JP4454181B2 (ja) * | 2001-05-15 | 2010-04-21 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
JP2002373969A (ja) * | 2001-06-15 | 2002-12-26 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
KR100445073B1 (ko) * | 2001-08-21 | 2004-08-21 | 삼성전자주식회사 | 듀얼 다이 패키지 |
US20030038356A1 (en) * | 2001-08-24 | 2003-02-27 | Derderian James M | Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods |
US6548376B2 (en) * | 2001-08-30 | 2003-04-15 | Micron Technology, Inc. | Methods of thinning microelectronic workpieces |
US20030042615A1 (en) * | 2001-08-30 | 2003-03-06 | Tongbi Jiang | Stacked microelectronic devices and methods of fabricating same |
JP2003086733A (ja) | 2001-09-11 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法およびそれを用いた電子機器 |
KR100447869B1 (ko) * | 2001-12-27 | 2004-09-08 | 삼성전자주식회사 | 다핀 적층 반도체 칩 패키지 및 이에 사용되는 리드 프레임 |
KR100480909B1 (ko) * | 2001-12-29 | 2005-04-07 | 주식회사 하이닉스반도체 | 적층 칩 패키지의 제조 방법 |
US6896760B1 (en) * | 2002-01-16 | 2005-05-24 | Micron Technology, Inc. | Fabrication of stacked microelectronic devices |
US6472736B1 (en) * | 2002-03-13 | 2002-10-29 | Kingpak Technology Inc. | Stacked structure for memory chips |
JP2003273317A (ja) | 2002-03-19 | 2003-09-26 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US7423336B2 (en) * | 2002-04-08 | 2008-09-09 | Micron Technology, Inc. | Bond pad rerouting element, rerouted semiconductor devices including the rerouting element, and assemblies including the rerouted semiconductor devices |
KR100470897B1 (ko) * | 2002-07-19 | 2005-03-10 | 삼성전자주식회사 | 듀얼 다이 패키지 제조 방법 |
AU2003272405A1 (en) | 2002-09-17 | 2004-04-08 | Chippac, Inc. | Semiconductor multi-package module having wire bond interconnection between stacked packages |
DE10251530B4 (de) * | 2002-11-04 | 2005-03-03 | Infineon Technologies Ag | Stapelanordnung eines Speichermoduls |
JP2004172157A (ja) | 2002-11-15 | 2004-06-17 | Shinko Electric Ind Co Ltd | 半導体パッケージおよびパッケージスタック半導体装置 |
DE10259221B4 (de) | 2002-12-17 | 2007-01-25 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben |
KR100621991B1 (ko) * | 2003-01-03 | 2006-09-13 | 삼성전자주식회사 | 칩 스케일 적층 패키지 |
US6861288B2 (en) | 2003-01-23 | 2005-03-01 | St Assembly Test Services, Ltd. | Stacked semiconductor packages and method for the fabrication thereof |
JP4615189B2 (ja) | 2003-01-29 | 2011-01-19 | シャープ株式会社 | 半導体装置およびインターポーザチップ |
US6856009B2 (en) | 2003-03-11 | 2005-02-15 | Micron Technology, Inc. | Techniques for packaging multiple device components |
JP3917946B2 (ja) | 2003-03-11 | 2007-05-23 | 富士通株式会社 | 積層型半導体装置 |
DE112004000572B4 (de) | 2003-04-02 | 2008-05-29 | United Test And Assembly Center Ltd. | Multi-Chip-Ball-Grid-Array-Gehäuse und Herstellungsverfahren |
KR20040087501A (ko) | 2003-04-08 | 2004-10-14 | 삼성전자주식회사 | 센터 패드 반도체 칩의 패키지 및 그 제조방법 |
TWI311353B (en) | 2003-04-18 | 2009-06-21 | Advanced Semiconductor Eng | Stacked chip package structure |
US7230331B2 (en) * | 2003-04-22 | 2007-06-12 | Industrial Technology Research Institute | Chip package structure and process for fabricating the same |
TWI225292B (en) | 2003-04-23 | 2004-12-11 | Advanced Semiconductor Eng | Multi-chips stacked package |
US7095103B1 (en) | 2003-05-01 | 2006-08-22 | Amkor Technology, Inc. | Leadframe based memory card |
JP2005011986A (ja) * | 2003-06-19 | 2005-01-13 | Sanyo Electric Co Ltd | 半導体装置 |
KR100604821B1 (ko) * | 2003-06-30 | 2006-07-26 | 삼성전자주식회사 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
KR100524975B1 (ko) * | 2003-07-04 | 2005-10-31 | 삼성전자주식회사 | 반도체 장치의 적층형 패키지 |
KR100546374B1 (ko) * | 2003-08-28 | 2006-01-26 | 삼성전자주식회사 | 센터 패드를 갖는 적층형 반도체 패키지 및 그 제조방법 |
DE10339890A1 (de) | 2003-08-29 | 2005-03-31 | Infineon Technologies Ag | Halbleiterbauelement |
US7071421B2 (en) * | 2003-08-29 | 2006-07-04 | Micron Technology, Inc. | Stacked microfeature devices and associated methods |
KR100541395B1 (ko) | 2003-09-09 | 2006-01-11 | 삼성전자주식회사 | 반도체칩 적층장치, 이것을 이용한 반도체 패키지의제조방법, 그리고 이러한 방법에 의하여 제조된 반도체패키지 |
KR100564585B1 (ko) | 2003-11-13 | 2006-03-28 | 삼성전자주식회사 | 이중 스택된 bga 패키지 및 다중 스택된 bga 패키지 |
US8970049B2 (en) | 2003-12-17 | 2015-03-03 | Chippac, Inc. | Multiple chip package module having inverted package stacked over die |
DE10360708B4 (de) | 2003-12-19 | 2008-04-10 | Infineon Technologies Ag | Halbleitermodul mit einem Halbleiterstapel, Umverdrahtungsplatte, und Verfahren zur Herstellung derselben |
EP1560267A1 (en) | 2004-01-29 | 2005-08-03 | Kingston Technology Corporation | Integrated multi-chip chip scale package |
US7422930B2 (en) * | 2004-03-02 | 2008-09-09 | Infineon Technologies Ag | Integrated circuit with re-route layer and stacked die assembly |
JP5010275B2 (ja) | 2004-03-25 | 2012-08-29 | 日本電気株式会社 | チップ積層型半導体装置 |
TWI236744B (en) | 2004-06-25 | 2005-07-21 | Advanced Semiconductor Eng | Method for manufacturing stacked multi-chip package |
US7602618B2 (en) * | 2004-08-25 | 2009-10-13 | Micron Technology, Inc. | Methods and apparatuses for transferring heat from stacked microfeature devices |
KR100688501B1 (ko) * | 2004-09-10 | 2007-03-02 | 삼성전자주식회사 | 미러링 구조를 갖는 스택 boc 패키지 및 이를 장착한양면 실장형 메모리 모듈 |
US20060108676A1 (en) | 2004-11-22 | 2006-05-25 | Punzalan Nelson V Jr | Multi-chip package using an interposer |
US7205656B2 (en) * | 2005-02-22 | 2007-04-17 | Micron Technology, Inc. | Stacked device package for peripheral and center device pad layout device |
US7364945B2 (en) * | 2005-03-31 | 2008-04-29 | Stats Chippac Ltd. | Method of mounting an integrated circuit package in an encapsulant cavity |
TWI442520B (zh) * | 2005-03-31 | 2014-06-21 | Stats Chippac Ltd | 具有晶片尺寸型封裝及第二基底及在上側與下側包含暴露基底表面之半導體組件 |
US7429786B2 (en) * | 2005-04-29 | 2008-09-30 | Stats Chippac Ltd. | Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides |
SG130055A1 (en) | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
SG130066A1 (en) | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
US7485969B2 (en) | 2005-09-01 | 2009-02-03 | Micron Technology, Inc. | Stacked microelectronic devices and methods for manufacturing microelectronic devices |
KR100791576B1 (ko) * | 2005-10-13 | 2008-01-03 | 삼성전자주식회사 | 볼 그리드 어레이 유형의 적층 패키지 |
US7312519B2 (en) * | 2006-01-12 | 2007-12-25 | Stats Chippac Ltd. | Stacked integrated circuit package-in-package system |
SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
SG139573A1 (en) | 2006-07-17 | 2008-02-29 | Micron Technology Inc | Microelectronic packages with leadframes, including leadframes configured for stacked die packages, and associated systems and methods |
US7851119B2 (en) * | 2006-09-07 | 2010-12-14 | Ricoh Company, Ltd. | Electrophotographic photoconductor, method for producing the same, image forming process, image forming apparatus and process cartridge |
DE102006042775B3 (de) * | 2006-09-12 | 2008-03-27 | Qimonda Ag | Schaltungsmodul und Verfahren zur Herstellung eines Schaltungsmoduls |
US7901989B2 (en) * | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
JP2009038142A (ja) * | 2007-07-31 | 2009-02-19 | Elpida Memory Inc | 半導体積層パッケージ |
US20100065949A1 (en) * | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
US8106498B2 (en) * | 2009-03-05 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with a dual board-on-chip structure and method of manufacture thereof |
US8242543B2 (en) * | 2009-08-26 | 2012-08-14 | Qualcomm Incorporated | Semiconductor wafer-to-wafer bonding for dissimilar semiconductor dies and/or wafers |
US9397050B2 (en) * | 2009-08-31 | 2016-07-19 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming pre-molded semiconductor die having bumps embedded in encapsulant |
KR102116987B1 (ko) * | 2013-10-15 | 2020-05-29 | 삼성전자 주식회사 | 반도체 패키지 |
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EP1929524B1 (en) | 2018-11-07 |
WO2007025127A3 (en) | 2007-05-18 |
US20090127689A1 (en) | 2009-05-21 |
EP1929524A2 (en) | 2008-06-11 |
US9583476B2 (en) | 2017-02-28 |
TWI309469B (en) | 2009-05-01 |
US20130341805A1 (en) | 2013-12-26 |
US9299684B2 (en) | 2016-03-29 |
US20070045803A1 (en) | 2007-03-01 |
WO2007025127A2 (en) | 2007-03-01 |
US10861824B2 (en) | 2020-12-08 |
US20170141085A1 (en) | 2017-05-18 |
KR101024424B1 (ko) | 2011-03-23 |
US8519523B2 (en) | 2013-08-27 |
US20190096857A1 (en) | 2019-03-28 |
US7504284B2 (en) | 2009-03-17 |
SG130066A1 (en) | 2007-03-20 |
US8030748B2 (en) | 2011-10-04 |
US10153254B2 (en) | 2018-12-11 |
US20120018887A1 (en) | 2012-01-26 |
US20160172349A1 (en) | 2016-06-16 |
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