KR20080028279A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20080028279A
KR20080028279A KR1020070089769A KR20070089769A KR20080028279A KR 20080028279 A KR20080028279 A KR 20080028279A KR 1020070089769 A KR1020070089769 A KR 1020070089769A KR 20070089769 A KR20070089769 A KR 20070089769A KR 20080028279 A KR20080028279 A KR 20080028279A
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KR
South Korea
Prior art keywords
semiconductor chip
metal layer
wiring pattern
connection terminal
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020070089769A
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English (en)
Korean (ko)
Inventor
다카하루 야마노
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20080028279A publication Critical patent/KR20080028279A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
KR1020070089769A 2006-09-26 2007-09-05 반도체 장치 및 그 제조 방법 Withdrawn KR20080028279A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00260949 2006-09-26
JP2006260949A JP2008084959A (ja) 2006-09-26 2006-09-26 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
KR20080028279A true KR20080028279A (ko) 2008-03-31

Family

ID=38858918

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070089769A Withdrawn KR20080028279A (ko) 2006-09-26 2007-09-05 반도체 장치 및 그 제조 방법

Country Status (6)

Country Link
US (2) US7884453B2 (https=)
EP (1) EP1906446A2 (https=)
JP (1) JP2008084959A (https=)
KR (1) KR20080028279A (https=)
CN (1) CN101154641A (https=)
TW (1) TW200816414A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374770B1 (ko) * 2013-11-22 2014-03-17 실리콘밸리(주) 금속 박판의 적층을 이용한 반도체 검사 패드 및 제조방법
KR20140079311A (ko) * 2012-12-18 2014-06-26 신꼬오덴기 고교 가부시키가이샤 반도체 장치의 제조 방법

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CN101303443A (zh) * 2007-05-11 2008-11-12 鸿富锦精密工业(深圳)有限公司 相机模组及其组装方法
JP2010165940A (ja) * 2009-01-16 2010-07-29 Shinko Electric Ind Co Ltd 半導体素子の樹脂封止方法
US9620455B2 (en) * 2010-06-24 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure
JP5878054B2 (ja) * 2012-03-27 2016-03-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
CN104576405B (zh) * 2014-12-16 2017-11-07 通富微电子股份有限公司 单层基板封装工艺
US9583472B2 (en) * 2015-03-03 2017-02-28 Apple Inc. Fan out system in package and method for forming the same
US9659907B2 (en) * 2015-04-07 2017-05-23 Apple Inc. Double side mounting memory integration in thin low warpage fanout package
JP6851239B2 (ja) 2017-03-29 2021-03-31 エイブリック株式会社 樹脂封止型半導体装置およびその製造方法
CN111627867A (zh) * 2019-02-28 2020-09-04 富泰华工业(深圳)有限公司 芯片封装结构及其制作方法

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JPH01276750A (ja) 1988-04-28 1989-11-07 Matsushita Electric Ind Co Ltd 半導体装置
JP2005328057A (ja) * 1994-03-18 2005-11-24 Hitachi Chem Co Ltd 半導体パッケージの製造法及び半導体パッケージ
JP3030201B2 (ja) * 1994-04-26 2000-04-10 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP3313547B2 (ja) 1995-08-30 2002-08-12 沖電気工業株式会社 チップサイズパッケージの製造方法
JP3007833B2 (ja) 1995-12-12 2000-02-07 富士通株式会社 半導体装置及びその製造方法及びリードフレーム及びその製造方法
JP3336235B2 (ja) * 1997-08-27 2002-10-21 松下電器産業株式会社 半導体装置およびその製造方法
JP2000164638A (ja) 1998-11-27 2000-06-16 Toshiba Corp 半導体装置
JP3501281B2 (ja) * 1999-11-15 2004-03-02 沖電気工業株式会社 半導体装置
JP2001217354A (ja) 2000-02-07 2001-08-10 Rohm Co Ltd 半導体チップの実装構造、および半導体装置
JP2001257453A (ja) * 2000-03-09 2001-09-21 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びそれらの製造方法
JP3786339B2 (ja) * 2000-03-23 2006-06-14 株式会社三井ハイテック 半導体装置の製造方法
JP2001298115A (ja) 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP4819304B2 (ja) * 2000-10-18 2011-11-24 日本電気株式会社 半導体パッケージ
JP3866033B2 (ja) * 2000-12-14 2007-01-10 シャープ株式会社 半導体装置の製造方法
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JP2007250834A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd 電子部品装置の製造方法
US8072059B2 (en) * 2006-04-19 2011-12-06 Stats Chippac, Ltd. Semiconductor device and method of forming UBM fixed relative to interconnect structure for alignment of semiconductor die
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US7642128B1 (en) * 2008-12-12 2010-01-05 Stats Chippac, Ltd. Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140079311A (ko) * 2012-12-18 2014-06-26 신꼬오덴기 고교 가부시키가이샤 반도체 장치의 제조 방법
KR101374770B1 (ko) * 2013-11-22 2014-03-17 실리콘밸리(주) 금속 박판의 적층을 이용한 반도체 검사 패드 및 제조방법

Also Published As

Publication number Publication date
US7884453B2 (en) 2011-02-08
EP1906446A2 (en) 2008-04-02
US20100041183A1 (en) 2010-02-18
CN101154641A (zh) 2008-04-02
JP2008084959A (ja) 2008-04-10
US20080073798A1 (en) 2008-03-27
US8211754B2 (en) 2012-07-03
TW200816414A (en) 2008-04-01

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