TW200816414A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

Info

Publication number
TW200816414A
TW200816414A TW096135326A TW96135326A TW200816414A TW 200816414 A TW200816414 A TW 200816414A TW 096135326 A TW096135326 A TW 096135326A TW 96135326 A TW96135326 A TW 96135326A TW 200816414 A TW200816414 A TW 200816414A
Authority
TW
Taiwan
Prior art keywords
wiring pattern
semiconductor device
metal layer
semiconductor
resin
Prior art date
Application number
TW096135326A
Other languages
English (en)
Chinese (zh)
Inventor
Takaharu Yamano
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200816414A publication Critical patent/TW200816414A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
TW096135326A 2006-09-26 2007-09-21 Semiconductor device and manufacturing method thereof TW200816414A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006260949A JP2008084959A (ja) 2006-09-26 2006-09-26 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW200816414A true TW200816414A (en) 2008-04-01

Family

ID=38858918

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135326A TW200816414A (en) 2006-09-26 2007-09-21 Semiconductor device and manufacturing method thereof

Country Status (6)

Country Link
US (2) US7884453B2 (https=)
EP (1) EP1906446A2 (https=)
JP (1) JP2008084959A (https=)
KR (1) KR20080028279A (https=)
CN (1) CN101154641A (https=)
TW (1) TW200816414A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101303443A (zh) * 2007-05-11 2008-11-12 鸿富锦精密工业(深圳)有限公司 相机模组及其组装方法
JP2010165940A (ja) * 2009-01-16 2010-07-29 Shinko Electric Ind Co Ltd 半導体素子の樹脂封止方法
US9620455B2 (en) * 2010-06-24 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure
JP5878054B2 (ja) * 2012-03-27 2016-03-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
JP6196893B2 (ja) * 2012-12-18 2017-09-13 新光電気工業株式会社 半導体装置の製造方法
KR101374770B1 (ko) * 2013-11-22 2014-03-17 실리콘밸리(주) 금속 박판의 적층을 이용한 반도체 검사 패드 및 제조방법
CN104576405B (zh) * 2014-12-16 2017-11-07 通富微电子股份有限公司 单层基板封装工艺
US9583472B2 (en) * 2015-03-03 2017-02-28 Apple Inc. Fan out system in package and method for forming the same
US9659907B2 (en) * 2015-04-07 2017-05-23 Apple Inc. Double side mounting memory integration in thin low warpage fanout package
JP6851239B2 (ja) 2017-03-29 2021-03-31 エイブリック株式会社 樹脂封止型半導体装置およびその製造方法
CN111627867A (zh) * 2019-02-28 2020-09-04 富泰华工业(深圳)有限公司 芯片封装结构及其制作方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276750A (ja) 1988-04-28 1989-11-07 Matsushita Electric Ind Co Ltd 半導体装置
JP2005328057A (ja) * 1994-03-18 2005-11-24 Hitachi Chem Co Ltd 半導体パッケージの製造法及び半導体パッケージ
JP3030201B2 (ja) * 1994-04-26 2000-04-10 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP3313547B2 (ja) 1995-08-30 2002-08-12 沖電気工業株式会社 チップサイズパッケージの製造方法
JP3007833B2 (ja) 1995-12-12 2000-02-07 富士通株式会社 半導体装置及びその製造方法及びリードフレーム及びその製造方法
JP3336235B2 (ja) * 1997-08-27 2002-10-21 松下電器産業株式会社 半導体装置およびその製造方法
JP2000164638A (ja) 1998-11-27 2000-06-16 Toshiba Corp 半導体装置
JP3501281B2 (ja) * 1999-11-15 2004-03-02 沖電気工業株式会社 半導体装置
JP2001217354A (ja) 2000-02-07 2001-08-10 Rohm Co Ltd 半導体チップの実装構造、および半導体装置
JP2001257453A (ja) * 2000-03-09 2001-09-21 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びそれらの製造方法
JP3786339B2 (ja) * 2000-03-23 2006-06-14 株式会社三井ハイテック 半導体装置の製造方法
JP2001298115A (ja) 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP4819304B2 (ja) * 2000-10-18 2011-11-24 日本電気株式会社 半導体パッケージ
JP3866033B2 (ja) * 2000-12-14 2007-01-10 シャープ株式会社 半導体装置の製造方法
US7331502B2 (en) * 2001-03-19 2008-02-19 Sumitomo Bakelite Company, Ltd. Method of manufacturing electronic part and electronic part obtained by the method
US7049170B2 (en) * 2003-12-17 2006-05-23 Tru-Si Technologies, Inc. Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities
JP3914239B2 (ja) 2005-03-15 2007-05-16 新光電気工業株式会社 配線基板および配線基板の製造方法
JP5000877B2 (ja) * 2005-10-07 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US7728437B2 (en) * 2005-11-23 2010-06-01 Fairchild Korea Semiconductor, Ltd. Semiconductor package form within an encapsulation
JP2007250834A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd 電子部品装置の製造方法
US8072059B2 (en) * 2006-04-19 2011-12-06 Stats Chippac, Ltd. Semiconductor device and method of forming UBM fixed relative to interconnect structure for alignment of semiconductor die
US7666709B1 (en) * 2008-12-10 2010-02-23 Stats Chippac, Ltd. Semiconductor device and method of placing semiconductor die on a temporary carrier using fiducial patterns
US7642128B1 (en) * 2008-12-12 2010-01-05 Stats Chippac, Ltd. Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP

Also Published As

Publication number Publication date
US7884453B2 (en) 2011-02-08
EP1906446A2 (en) 2008-04-02
US20100041183A1 (en) 2010-02-18
CN101154641A (zh) 2008-04-02
KR20080028279A (ko) 2008-03-31
JP2008084959A (ja) 2008-04-10
US20080073798A1 (en) 2008-03-27
US8211754B2 (en) 2012-07-03

Similar Documents

Publication Publication Date Title
TW200816414A (en) Semiconductor device and manufacturing method thereof
TWI374535B (en) Electronic parts packaging structure and method of manufacturing the same
TWI331797B (en) Surface structure of a packaging substrate and a fabricating method thereof
TWI261328B (en) Circuit device
TW200818358A (en) Manufacturing method of semiconductor device
TW200941688A (en) Semiconductor device and manufacturing method thereof
TWI365020B (en) Method of fabricating package substrate having semiconductor component embedded therein
JP2011096903A5 (ja) 半導体素子実装配線基板及びその製造方法
JP5289832B2 (ja) 半導体装置および半導体装置の製造方法
TW200421960A (en) Semiconductor device, and the manufacturing method of the same
TW200824082A (en) Manufacturing method of semiconductor device
JP2003152014A (ja) 半導体装置の製造方法及び半導体装置
TW200921874A (en) Wiring substrate and method of manufacturing the same
JP2008311592A (ja) 電子装置の製造方法
TW200807661A (en) Circuit board structure having passive component and stack structure thereof
CN101471269A (zh) 半导体器件的制造方法
CN101188204B (zh) 半导体器件及其制造方法
JP4420965B1 (ja) 半導体装置内蔵基板の製造方法
TW200820865A (en) Circuit board structure having embedded compacitor and fabrication method thereof
TW200930173A (en) Package substrate having embedded semiconductor element and fabrication method thereof
TWI246135B (en) Semiconductor element with under bump metallurgy structure and fabrication method thereof
CN112133695B (zh) 系统级封装结构及其制作方法
TW544742B (en) Semiconductor device and method of production of same
TW200941678A (en) Package substrate having semiconductor component embedded therein
TW200539408A (en) Method of manufacturing circuit device