KR20080015129A - 텅스텐막 형성방법, 성막장치, 기억매체 및 반도체 장치 - Google Patents
텅스텐막 형성방법, 성막장치, 기억매체 및 반도체 장치 Download PDFInfo
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- KR20080015129A KR20080015129A KR1020077030782A KR20077030782A KR20080015129A KR 20080015129 A KR20080015129 A KR 20080015129A KR 1020077030782 A KR1020077030782 A KR 1020077030782A KR 20077030782 A KR20077030782 A KR 20077030782A KR 20080015129 A KR20080015129 A KR 20080015129A
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- gas
- tungsten film
- tungsten
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- 239000010937 tungsten Substances 0.000 title claims abstract description 282
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 282
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 281
- 238000000034 method Methods 0.000 title claims abstract description 124
- 238000003860 storage Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title description 11
- 239000007789 gas Substances 0.000 claims abstract description 285
- 238000012545 processing Methods 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- -1 hydrogen compound Chemical class 0.000 claims abstract description 41
- 238000010926 purge Methods 0.000 claims abstract description 33
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 60
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 238000010790 dilution Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 150000001282 organosilanes Chemical class 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 abstract description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 27
- 239000011737 fluorine Substances 0.000 abstract description 27
- 239000010408 film Substances 0.000 description 250
- 239000010410 layer Substances 0.000 description 48
- 238000007796 conventional method Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 20
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
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- 238000009826 distribution Methods 0.000 description 4
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- 238000002441 X-ray diffraction Methods 0.000 description 3
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- 125000004429 atom Chemical group 0.000 description 2
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- 239000010419 fine particle Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
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- 230000000149 penetrating effect Effects 0.000 description 2
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- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PUUOOWSPWTVMDS-UHFFFAOYSA-N difluorosilane Chemical compound F[SiH2]F PUUOOWSPWTVMDS-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (13)
- 진공 흡인 가능하게 구성된 처리용기내에서 피처리체의 표면에 텅스텐막을 형성하는 방법으로서,상기 피처리체에 실리콘 함유 가스를 공급하는 공정과,상기 공정후에 텅스텐 함유 가스를 공급하는 텅스텐 함유 가스 공급 스텝과 실리콘을 포함하지 않는 수소 화합물 가스를 공급하는 수소 화합물 가스 공급 스텝을, 양 스텝사이에 상기 처리용기내에 불활성 가스를 공급하는 퍼지 스텝 및/또는 상기 처리용기를 진공 흡인하는 진공 흡인 스텝을 개재시켜, 교대로 반복 실행함으로써 제 1의 텅스텐막을 형성하는 공정,을 갖는 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항에 있어서,상기 제 1의 텅스텐막 상에 상기 텅스텐 함유 가스와 환원성 가스를 동시에 공급함으로써, 제 2의 텅스텐막을 형성하는 공정을 더 갖는 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 2 항에 있어서,상기 제 1의 텅스텐막 형성공정과 상기 제 2의 텅스텐막 형성공정은, 동일 처리용기내에서 실행되는 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 실리콘 함유 가스는, 모노실레인, 다이실레인, 유기실레인으로부터 선택되는 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 실리콘을 포함하지 않는 수소 화합물 가스는, 다이보레인 또는 포스핀인 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 실리콘을 포함하지 않는 수소 화합물 가스는, 수소 희석 다이보레인 가스인 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 2 항 내지 제 6 항 중 어느 한 항에 있어서,상기 환원성 가스는, 수소인 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,상기 텅스텐 함유 가스는, WF6인 것을 특징으로 하는 텅스텐막의 형성방법.
- 제 1 항 내지 제 8 항 중 어느 한 항에 있어서,상기 피처리체의 표면에는 TiN 막을 포함하는 배리어층이 형성되어 있는 것을 특징으로 하는 텅스텐막의 형성방법.
- 진공 흡인 가능하게 구성된 처리용기내에서, 콘택트 홀이 형성된 피처리체에 실리콘 함유 가스를 공급하는 공정과,상기 공정후에 텅스텐 함유 가스를 공급하는 텅스텐 함유 가스 공급 스텝과 실리콘을 포함하지 않는 수소 화합물 가스를 공급하는 수소 화합물 가스 공급 스텝을, 양 스텝사이에 상기 처리용기내에 불활성 가스를 공급하는 퍼지 스텝 및/또는 상기 처리용기를 진공 흡인하는 진공 흡인 스텝을 개재시켜, 교대로 반복 실행함으로써 제 1의 텅스텐막을 형성하는 공정과,상기 제 1의 텅스텐막 상에 상기 텅스텐 함유 가스와 환원성 가스를 동시에 공급함으로써, 더욱이 제 2의 텅스텐막을 형성하여 상기 콘택트 홀을 설치하는 공정과,상기 제 2의 텅스텐막 형성후에 상기 피처리체의 표면에 화학기계 연마처리를 실시함으로써 콘택트 플러그를 형성하는 공정,을 갖는 것을 특징으로 하는 텅스텐막의 형성방법.
- 진공 흡인 가능하게 구성된 처리용기와,상기 처리용기내에 설치되어, 피처리체를 탑재하기 위한 탑재대와,상기 피처리체를 가열하기 위한 가열수단과,상기 처리용기내에, 적어도 실리콘수소 함유 가스와, 텅스텐 함유 가스와, 실리콘을 포함하지 않는 수소 화합물 가스를 공급가능한 가스 공급수단과,상기 탑재대에 탑재된 피처리체의 표면에 텅스텐막을 형성할 때에, 상기 가스 공급수단에 의해 상기 피처리체에 실리콘 함유 가스를 공급하는 공정과, 상기 공정후에 상기 가스 공급수단에 의해 텅스텐 함유 가스를 공급하는 텅스텐 함유 가스 공급 스텝과 상기 가스 공급수단에 의해 실리콘을 포함하지 않는 수소 화합물 가스를 공급하는 수소 화합물 가스 공급 스텝을, 양 스텝사이에 상기 처리용기내에 불활성 가스를 공급하는 퍼지 스텝 및/또는 상기 처리용기를 진공 흡인하는 진공 흡인 스텝을 개재시켜, 교대로 반복 실행함으로써 제 1의 텅스텐막을 형성하는 공정을 실행하는 제어부,를 구비한 것을 특징으로 하는 성막장치.
- 진공 흡인 가능하게 구성된 처리용기와, 상기 처리용기내에 설치되어, 피처리체를 탑재하기 위한 탑재대와, 상기 피처리체를 가열하기 위한 가열수단과, 상기 처리용기내에, 적어도 실리콘수소 함유 가스와, 텅스텐 함유 가스와, 실리콘을 포함하지 않는 수소 화합물 가스를 공급가능한 가스 공급수단을 구비하는 성막장치를 이용하여, 컴퓨터에, 상기 처리용기내의 상기 피처리체에 대하여 텅스텐막 형성처리를 실행시키기 위한 프로그램을 기억한 컴퓨터 읽기 가능한 기억매체로서,상기 텅스텐막 형성처리는,상기 가스 공급수단에 의해 상기 피처리체에 실리콘 함유 가스를 공급하는 공정과,상기 공정후에 상기 가스 공급수단에 의해 텅스텐 함유 가스를 공급하는 텅스텐 함유 가스 공급 스텝과 상기 가스 공급수단에 의해 실리콘을 포함하지 않는 수소 화합물 가스를 공급하는 수소 화합물 가스 공급 스텝을, 양 스텝사이에 상기 처리용기내에 불활성 가스를 공급하는 퍼지 스텝 및/또는 상기 처리용기를 진공 흡인하는 진공 흡인 스텝을 개재시켜, 교대로 반복 실행함으로써 제 1의 텅스텐막을 형성하는 공정,을 갖는 것을 특징으로 하는 기억매체.
- 진공 흡인 가능하게 구성된 처리용기내에서, 콘택트 홀이 형성된 피처리체에 실리콘 함유 가스를 공급하는 공정과,상기 공정후에 텅스텐 함유 가스를 공급하는 텅스텐 함유 가스 공급 스텝과 실리콘을 포함하지 않는 수소 화합물 가스를 공급하는 수소 화합물 가스 공급 스텝을, 양 스텝사이에 상기 처리용기내에 불활성 가스를 공급하는 퍼지 스텝 및/또는 상기 처리용기를 진공 흡인하는 진공 흡인 스텝을 개재시켜, 교대로 반복 실행함으로써 제 1의 텅스텐막을 형성하는 공정과,상기 제 1의 텅스텐막 상에 상기 텅스텐 함유 가스와 환원성 가스를 동시에 공급함으로써, 더욱이 제 2의 텅스텐막을 형성하여 상기 콘택트 홀을 설치하는 공 정과,상기 제 2의 텅스텐막 형성후에 상기 피처리체의 표면에 화학기계 연마처리를 실시함으로써 콘택트 플러그를 형성하는 공정,을 갖는 방법에 의해 형성된 콘택트 플러그를 구비하는 것을 특징으로 하는 반도체 장치.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150145648A (ko) * | 2014-06-20 | 2015-12-30 | (주)알파코 | 엘엠 가이드의 텅스텐 코팅방법 |
KR20160140458A (ko) * | 2015-05-27 | 2016-12-07 | 램 리써치 코포레이션 | 저 불소 함량을 가진 텅스텐 막들 |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
JP2008192835A (ja) * | 2007-02-05 | 2008-08-21 | Tokyo Electron Ltd | 成膜方法,基板処理装置,および半導体装置 |
US8156022B2 (en) | 2007-02-12 | 2012-04-10 | Pricelock, Inc. | Method and system for providing price protection for commodity purchasing through price protection contracts |
US8019694B2 (en) | 2007-02-12 | 2011-09-13 | Pricelock, Inc. | System and method for estimating forward retail commodity price within a geographic boundary |
WO2008124712A1 (en) | 2007-04-09 | 2008-10-16 | Pricelock, Inc. | System and method for constraining depletion amount in a defined time frame |
JP5064119B2 (ja) | 2007-06-07 | 2012-10-31 | 東京エレクトロン株式会社 | 真空引き方法及び記憶媒体 |
KR100890047B1 (ko) * | 2007-06-28 | 2009-03-25 | 주식회사 하이닉스반도체 | 반도체소자의 배선 형성방법 |
KR100881716B1 (ko) * | 2007-07-02 | 2009-02-06 | 주식회사 하이닉스반도체 | 낮은 시트저항의 텅스텐막을 갖는 텅스텐배선 제조 방법 및그를 이용한 반도체소자의 게이트 제조 방법 |
JP5428151B2 (ja) * | 2007-11-26 | 2014-02-26 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5547380B2 (ja) | 2008-04-30 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8129270B1 (en) | 2008-12-10 | 2012-03-06 | Novellus Systems, Inc. | Method for depositing tungsten film having low resistivity, low roughness and high reflectivity |
US20100267230A1 (en) | 2009-04-16 | 2010-10-21 | Anand Chandrashekar | Method for forming tungsten contacts and interconnects with small critical dimensions |
US9159571B2 (en) | 2009-04-16 | 2015-10-13 | Lam Research Corporation | Tungsten deposition process using germanium-containing reducing agent |
US9548228B2 (en) | 2009-08-04 | 2017-01-17 | Lam Research Corporation | Void free tungsten fill in different sized features |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
JP5646190B2 (ja) * | 2010-03-12 | 2014-12-24 | 東京エレクトロン株式会社 | 洗浄方法及び処理装置 |
US8865594B2 (en) * | 2011-03-10 | 2014-10-21 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
JP5959991B2 (ja) * | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
JP5925476B2 (ja) * | 2011-12-09 | 2016-05-25 | 株式会社アルバック | タングステン化合物膜の形成方法 |
JP2013182961A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
CN113862634A (zh) | 2012-03-27 | 2021-12-31 | 诺发系统公司 | 钨特征填充 |
US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
KR102100520B1 (ko) * | 2012-03-27 | 2020-04-14 | 노벨러스 시스템즈, 인코포레이티드 | 핵생성 억제를 사용하는 텅스텐 피처 충진 |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US9969622B2 (en) | 2012-07-26 | 2018-05-15 | Lam Research Corporation | Ternary tungsten boride nitride films and methods for forming same |
US8853080B2 (en) | 2012-09-09 | 2014-10-07 | Novellus Systems, Inc. | Method for depositing tungsten film with low roughness and low resistivity |
US11043386B2 (en) | 2012-10-26 | 2021-06-22 | Applied Materials, Inc. | Enhanced spatial ALD of metals through controlled precursor mixing |
US9230815B2 (en) | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
US9153486B2 (en) | 2013-04-12 | 2015-10-06 | Lam Research Corporation | CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
JP6147913B2 (ja) * | 2014-03-28 | 2017-06-14 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理装置およびプログラム |
US10643925B2 (en) * | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
CN105097474B (zh) * | 2014-05-09 | 2018-03-06 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
US9349637B2 (en) | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
JP6222880B2 (ja) * | 2014-09-24 | 2017-11-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US10002834B2 (en) * | 2015-03-11 | 2018-06-19 | Applied Materials, Inc. | Method and apparatus for protecting metal interconnect from halogen based precursors |
JP6416679B2 (ja) * | 2015-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
JP6346595B2 (ja) | 2015-08-25 | 2018-06-20 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
JP2017069313A (ja) * | 2015-09-29 | 2017-04-06 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム |
US10214807B2 (en) * | 2016-06-02 | 2019-02-26 | Lam Research Corporation | Atomic layer deposition of tungsten for enhanced fill and reduced substrate attack |
JP6998873B2 (ja) * | 2016-07-26 | 2022-01-18 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
RU2712681C1 (ru) * | 2016-10-27 | 2020-01-30 | Общество с ограниченной ответственностью научно-производственное предприятие "ЭФОМ" | Способ нанесения тонких металлических покрытий |
US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
JP6788545B2 (ja) * | 2017-04-26 | 2020-11-25 | 東京エレクトロン株式会社 | タングステン膜を形成する方法 |
KR20200032756A (ko) | 2017-08-14 | 2020-03-26 | 램 리써치 코포레이션 | 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스 |
CN109750274B (zh) * | 2017-11-01 | 2021-10-22 | 长鑫存储技术有限公司 | 半导体生产设备及半导体工艺方法 |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US20210115560A1 (en) * | 2018-06-28 | 2021-04-22 | Tokyo Electron Limited | Film forming method, film forming system, and film forming apparatus |
KR102513403B1 (ko) * | 2018-07-30 | 2023-03-24 | 주식회사 원익아이피에스 | 텅스텐 증착 방법 |
SG11202106002VA (en) | 2018-12-05 | 2021-07-29 | Lam Res Corp | Void free low stress fill |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1097848C (zh) * | 1997-11-21 | 2003-01-01 | 台湾茂矽电子股份有限公司 | 制造集成电路的化学机械研磨方法及其装置 |
US6982226B1 (en) * | 1998-06-05 | 2006-01-03 | Agere Systems Inc. | Method of fabricating a contact with a post contact plug anneal |
JP2000114369A (ja) * | 1998-10-05 | 2000-04-21 | Sony Corp | 金属膜の形成方法および電子装置の製造方法 |
JP3331334B2 (ja) * | 1999-05-14 | 2002-10-07 | 株式会社東芝 | 半導体装置の製造方法 |
US6214714B1 (en) * | 1999-06-25 | 2001-04-10 | Applied Materials, Inc. | Method of titanium/titanium nitride integration |
US6303480B1 (en) * | 1999-09-13 | 2001-10-16 | Applied Materials, Inc. | Silicon layer to improve plug filling by CVD |
US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6936538B2 (en) * | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
KR100783844B1 (ko) * | 2001-08-14 | 2007-12-10 | 동경 엘렉트론 주식회사 | 텅스텐막의 형성 방법 |
JP4032872B2 (ja) * | 2001-08-14 | 2008-01-16 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
US6787466B2 (en) * | 2002-02-15 | 2004-09-07 | Applied Materials, Inc. | High throughout process for the formation of a refractory metal nucleation layer |
US7427426B2 (en) * | 2002-11-06 | 2008-09-23 | Tokyo Electron Limited | CVD method for forming metal film by using metal carbonyl gas |
JP3956049B2 (ja) * | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
JP2004277864A (ja) * | 2003-03-18 | 2004-10-07 | Toshiba Corp | 成膜方法及び成膜装置 |
US6924223B2 (en) * | 2003-09-30 | 2005-08-02 | Tokyo Electron Limited | Method of forming a metal layer using an intermittent precursor gas flow process |
JP3759525B2 (ja) * | 2003-10-27 | 2006-03-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150145648A (ko) * | 2014-06-20 | 2015-12-30 | (주)알파코 | 엘엠 가이드의 텅스텐 코팅방법 |
KR20160140458A (ko) * | 2015-05-27 | 2016-12-07 | 램 리써치 코포레이션 | 저 불소 함량을 가진 텅스텐 막들 |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
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TWI390612B (zh) | 2013-03-21 |
CN101899649A (zh) | 2010-12-01 |
WO2007004443A1 (ja) | 2007-01-11 |
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TW200710968A (en) | 2007-03-16 |
JP4945937B2 (ja) | 2012-06-06 |
US8168539B2 (en) | 2012-05-01 |
JP2007009298A (ja) | 2007-01-18 |
KR100939124B1 (ko) | 2010-01-28 |
CN101213320A (zh) | 2008-07-02 |
CN101899649B (zh) | 2012-11-21 |
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