TW201942960A - 在基板上形成電極之方法及包括電極之半導體裝置結構 - Google Patents
在基板上形成電極之方法及包括電極之半導體裝置結構 Download PDFInfo
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- TW201942960A TW201942960A TW108109360A TW108109360A TW201942960A TW 201942960 A TW201942960 A TW 201942960A TW 108109360 A TW108109360 A TW 108109360A TW 108109360 A TW108109360 A TW 108109360A TW 201942960 A TW201942960 A TW 201942960A
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- Prior art keywords
- titanium nitride
- substrate
- electrode
- less
- device structure
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- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 108
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 234
- 239000002243 precursor Substances 0.000 claims abstract description 145
- 238000000151 deposition Methods 0.000 claims abstract description 109
- 239000000376 reactant Substances 0.000 claims abstract description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 72
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 claims abstract description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 230000008021 deposition Effects 0.000 claims description 87
- 230000008569 process Effects 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 52
- 125000004122 cyclic group Chemical group 0.000 claims description 36
- 238000000231 atomic layer deposition Methods 0.000 claims description 26
- 238000005137 deposition process Methods 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 3
- XKLVLDXNZDIDKQ-UHFFFAOYSA-N butylhydrazine Chemical group CCCCNN XKLVLDXNZDIDKQ-UHFFFAOYSA-N 0.000 claims description 3
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims description 3
- PYHOFAHZHOBVGV-UHFFFAOYSA-N triazane Chemical compound NNN PYHOFAHZHOBVGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 144
- 239000010410 layer Substances 0.000 description 69
- 238000006243 chemical reaction Methods 0.000 description 62
- 229910052751 metal Inorganic materials 0.000 description 40
- 239000002184 metal Substances 0.000 description 40
- 238000002441 X-ray diffraction Methods 0.000 description 34
- 239000000463 material Substances 0.000 description 26
- 239000013078 crystal Substances 0.000 description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- 239000010936 titanium Substances 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 17
- 239000010937 tungsten Substances 0.000 description 17
- 238000011010 flushing procedure Methods 0.000 description 15
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 15
- 239000003989 dielectric material Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- UJFIUFIWCZOLDY-UHFFFAOYSA-N [SiH4].ClC(C(Cl)(Cl)Cl)(Cl)Cl Chemical compound [SiH4].ClC(C(Cl)(Cl)Cl)(Cl)Cl UJFIUFIWCZOLDY-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
揭露一種在基板上形成電極之方法。該方法可以包括:使基板與包含四碘化鈦(TiI4)前驅物的第一氣相反應物接觸;使基板與包含氮源前驅物的第二氣相反應物接觸;以及在基板的表面上沉積氮化鈦層,從而形成電極,其中氮化鈦層具有小於400 μΩ-cm的電阻率。亦提供相關的半導體裝置結構,其包括藉由本發明的方法所沉積之氮化鈦電極。
Description
本揭露大體上係有關於用以在基板上形成電極之方法,並且具體地係有關於用以在部分製造的半導體裝置結構上形成氮化鈦電極之方法。本揭露大體上亦係有關於一種半導體裝置結構,並且具體地係有關於一種包括氮化鈦電極之半導體裝置結構。
在半導體裝置製造領域中,傾向於降低含金屬膜(例如,純金屬、金屬氮化物、金屬碳化物及金屬矽化物)之沉積溫度。由於減少現有技術的半導體裝置結構(例如,互補金屬氧化物半導體(CMOS)裝置結構或像動態隨機存取記憶體(DRAM)裝置之記憶裝置)製造所常常需要之熱積存(thermal budge)要求,可能希望降低含金屬膜之沉積溫度。在特定的半導體製造程序中,含金屬膜的高溫沉積可能導致金屬物種不需要的熱擴散至相鄰的介電材料中,摻質物種在電晶體結構中不希望的擴散,以及不需要的材料之形成。
然而,含金屬膜(例如,氮化鈦膜)的沉積溫度之降低可能對沉積膜的品質產生不利影響。例如,氮化鈦膜的沉積溫度之降低可能導致氮化鈦膜具有降低的結晶品質及較低的密度。在膜為導電的特定情況下,沉積溫度的降低可能導致剛沉積之膜的電阻率增加。於是,期望有用於以降低的沉積溫度沉積含金屬膜同時保持剛沉積之膜的品質之方法。
本發明內容以簡化形式來介紹一系列之概念。這些概念會在下面本發明的示例實施例之詳細敘述中做進一步詳述。本發明內容沒有意欲要確認所主張之標的的關鍵特徵或必要特徵,亦沒有意欲用來限制所主張之標的的範圍。
在本發明的一些實施例中,提供用於在一基板上形成一電極之方法。該方法可以包括:使該基板與一包含四碘化鈦(TiI4
)的第一氣相反應物接觸; 使該基板與一包含氮源前驅物的第二氣相反應物接觸;以及在該基板的一表面上沉積一氮化鈦層,從而形成該電極,其中該氮化鈦層具有小於400 μΩ-cm的電阻率。
在本發明的一些實施例中,提供半導體裝置結構。該半導體裝置結構可以包括:一部分製造的半導體裝置結構;以及一氮化鈦電極,其配置在該部分製造的半導體裝置結構上,其中該氮化鈦電極具有小於400 μΩ-cm的電阻率。
為了概述本發明及相較於習知技藝所實現之優點,本發明之某些目的及優點於此已描述於上文中。當然,可以理解,依據本發明的任何特定實施例,不一定可以實現所有這樣的目的或優點。因此,例如,熟悉該項技藝者將認識到,本發明可以以實現或最佳化本文所教示或建議之一個優點或一組優點而不一定實現本文可能教示或建議之其他目的或優點的方式來具體化或實施。
所有這些實施例皆意欲在本文所揭露之本發明的範圍內。根據下面參考所附圖式之某些實施例的詳細描述,這些及其他實施例對熟悉該項技藝者將變得顯而易見,本發明並非侷限於所揭露之任何特定實施例。
雖然在下文中揭露特定實施例及實例,但是該項技藝者可以理解,本發明延伸超出本發明所具體揭露之實施例及/或用途及其明顯修改及其均等物。因此,意指所揭露之本發明的範圍不應受限於下文所描述之特定揭露的實施例。
本文呈現的圖示並不是意味著任何特定材料、結構或裝置的實際視圖,而僅係用於描述本發明之實施例的理想圖示。
如本文所使用,術語「循環沉積」可以意指將前驅物(反應物)依序引入至反應室中,以在基板上方沉積膜,並且包括像原子層沉積及循環式化學氣相沉積之沉積技術。
如本文所使用,術語「循環化學氣相沉積」可以意指任何一個製程,其中將基板依序暴露於兩種或更多種揮發性前驅物,該等前驅物在基板上反應及/或分解,以產生所要的沉積物。
如本文所使用,術語「基板」可以意指可使用或上面可形成裝置、電路或膜之任何底層材料。
如本文所使用,術語「原子層沉積(ALD)」可以意指在處理室中實施沉積循環(較佳地,複數個連續沉積循環)的氣相沉積製程。通常,在每個循環期間,前驅物被化學吸附至沉積表面(例如,基板表面或像來自前一個ALD循環之材料的先前所沉積之底層表面),從而形成不容易與其它前驅物反應(亦即,自限反應(self-limiting reaction))的單層或次單層。之後,如果需要,則可以接著將反應物(例如,另一個前驅物或反應氣體)引入至處理室中,以用於在沉積表面上將經化學吸附之前驅物轉化為所要材料。通常,此反應物能夠進一步與前驅物反應。此外,亦可在每個循環期間利用沖洗步驟,從處理室移除過多的前驅物,及/或在轉化經化學吸附之前驅物之後,從處理室移除過多的反應物及/或反應副產物。再者,當用前驅物組合物、反應氣體及沖洗(例如,惰性載體)氣體之交替脈衝執行時,,本文所使用之術語「原子層沉積」亦意指包括由相關術語所表示之製程,例如,「化學氣相原子層沉積」、「原子層磊晶(ALE)」、分子束磊晶(MBE)、氣體源MBE或有機金屬MBE及化學束磊晶。
如本文所使用,術語「膜」、「薄膜」、「層」及「薄層」可以意指藉由本文揭露之方法所沉積之任何連續或不連續結構及材料。例如,「膜」、「薄膜」、「層」及「薄層」可以包括2D材料、奈米棒、奈米管或奈米粒子或者甚至部分或完全分子層或部分或完全原子層或原子及/或分子之團簇。「膜」、「薄膜」、「層」及「薄層」可以包括具有針孔之材料或層,但仍然是至少部分連續的。
如本文所使用,術語「半導體結構」可以意指包括半導體材料的任何結構,半導體材料包括像半導體基板之塊狀半導體材料(單獨或者在其上包含像金屬及絕緣體之其他材料的組合)及半導體材料層(單獨或者包含像金屬及絕緣體之其它材料的組合)。此外,術語「半導體結構」亦包括任何支撐結構,其包括但不限於上述半導體結構。術語「半導體結構」亦可以意指一或多個半導體層或結構,其包括半導體裝置的主動或可操作部分以及在其上已製造之一個製程期間所形成的半導體結構。
如本文所使用,術語「部分製造的半導體裝置結構」可以意指包括意欲併入一或多個半導體裝置中之製造的及部分製造的主動或被動裝置組件之任何結構。
如本文所使用,術語「電極」可以意指導電構件或導電構件之至少一部分,其構成成使電流通過一或多個裝置結構。
如本文所用,術語「氮化鈦」及「氮化鈦膜」可以意指包含鈦物種及氮氣物種的材料,並且亦可以包括三元氮化鈦膜,例如但不限於氮化鈦矽(TiSiN)、氮氧化鈦(TiON)或氮化鈦鋁(TiAlN)。
在本發明的整個實施例中給出一些實例材料,應注意針對每個實例材料所給出之化學式不應被視為限制性且所給出之非限制性實例材料不應受給定的實例化學計量所限制。
本發明包括可以用於在基板上形成電極之方法,並且具體地包括用於使用循環式沉積製程在部分製造的半導體裝置結構上沉積氮化鈦電極之方法。
氮化鈦(TiN)可以用於半導體裝置製造程序中的許多應用。在電極應用中可以使用一或多個氮化鈦層作為擴散阻障層,其中氮化鈦層可以防止銅導體擴散到周圍的介電材料中。此外,可以使用氮化鈦層作為儲存裝置(例如,動態隨機存取記憶體(DRAM)裝置)的導電電極。
沉積氮化鈦膜之一般必要條件係沉積製程係極度保形的(conformal)。例如,通常需要保形沉積,以便在包括高縱橫比特徵之三維結構上均勻地沉積氮化鈦膜。
循環沉積製程(例如,原子層沉積(ALD)及循環式化學氣相沉積(CCVD))將一或多種前驅物(反應物)依序引入至反應室中,其中前驅物以依序自限方式與基板表面一次進行一個反應。已經說明循環沉積製程可以用原子級厚度控制產生具有極佳的保形性之氮化鈦膜。
在ALD型製程中,可以使用一些前驅物作為用於氮化鈦膜沉積之鈦的氣相反應物源。在ALD型製程中最常用的鈦源前驅物中之一係四氯化鈦(TiCl4
),這歸因於四氯化鈦的有利揮發性及相對低的成本。然而,使用四氯化鈦(TiCl4
)作為鈦源前驅物來沉積氮化鈦膜可能需要相對高溫的沉積,例如,在約400℃至600℃之間,以便實現具有合適特性(例如,低電阻率)的氮化鈦膜。此外,四氯化鈦(TiCl4
)可能在高溫沉積製程中釋放氯物種,這可能不期望地蝕刻正在進行沉積的基板之某些部分。於是,期望方法及相關的半導體裝置結構能夠降低氮化鈦膜的沉積溫度,同時保持高品質的膜特性,例如,低電阻率、低雜質濃度及高品質晶體結構。
因此,本發明的實施例可以包括在基板上形成電極之方法。該方法可以包括:使基板與包含四碘化鈦(TiI4
)前驅物的第一氣相反應物接觸,使基板與包含氮源前驅物的第二氣相反應物接觸;以及在基板的表面上沉積氮化鈦層,從而形成電極,其中氮化鈦層具有小於400 μΩ-cm的電阻率。
在本發明的一些實施例中,可以藉由使用四碘化鈦(TiI4
)作為鈦源前驅物的循環式沉積製程來沉積氮化鈦層(或膜)。循環式沉積製程之非限制性示範實施例可以包括原子層沉積(ALD),其中ALD係基於典型的自限反應,由此使用反應物之依序且交替脈衝來於每個沉積循環沉積約一個原子(或分子)單層材料。通常選擇沉積條件及前驅物,以提供自飽和反應,使得一種反應物之吸附層留下不與同一種反應物之氣相反應物反應的表面終止處(surface termination)。接著使基板與一種不同的反應物接觸,此不同的反應物與先前終止處反應,以便能夠持續沉積。因此,交替脈衝的每個循環通常留下不超過約一個單層的所要材料。然而,如上所述,熟習該項技藝者將認識到,例如,如果不管製程的交替性質而進行一些氣相反應,則在一或多個ALD循環中可以沉積超過一個單層材料。
在用於沉積氮化鈦膜之ALD型製程中,一個沉積循環可以包括使基板與第一反應物接觸;從反應空間移除任何未反應之第一反應物及反應副產物;以及使基板與第二反應物接觸,接著進行第二移除步驟。第一反應物可以包括四碘化鈦源前驅物(「鈦源前驅物」),而第二反應物可以包括氮源前驅物(「氮源前驅物」)。
前驅物可藉由惰性氣體(例如,氬氣(Ar)或氮氣(N2
))分離,以避免反應物之間的氣相反應且能夠進行自飽和表面反應。然而,在一些實施例中,可以移動基板,以與第一氣相反應物及第二氣相反應物個別接觸。由於反應自飽和,可以不需要基板之嚴格的溫度控制及前驅物之精確的劑量控制。然而,基板溫度較佳使得入射氣體物種不會凝結成單層亦不會在表面上分解。在使基板與下一種反應性化學物質接觸之前,例如藉由沖洗反應空間或藉由移動基板來從基板表面移除過剩的化學物質及反應副產物(如果有的話)。不需要的氣態分子可以藉助於惰性沖洗氣體有效地從反應空間排出。真空泵可以用於輔助沖洗。
能夠用於沉積氮化鈦膜之反應器可用於沉積。這樣的反應器包括ALD反應器以及配備有適當設備及用以提供前驅物之手段的CVD反應器。依據一些實施例,可以使用噴灑頭式反應器。依據一些實施例,可以使用交叉流動式、批次式、小型批次式或空間式ALD反應器。在至少一個實施例中,可以使用立式爐反應器。
因此,在一些實施例中,晶圓在處理期間旋轉。在其他實施例中,批次式反應器包含小型批次式反應器,其構造成容納10個或更少晶圓、8個或更少晶圓、6個或更少晶圓、4個或更少晶圓或者2個或更少晶圓。在其中使用批次式反應器的一些實施例中,晶圓間之不均勻度係小於3% (1σ)、小於2%、小於1%或甚至小於0.5%。
本文所述之沉積製程可以視情況在連接至集束型製程設備(cluster tool)的反應器或反應室中進行。在集束型製程設備中,因為每個反應室專用於一種類型的製程,所以每個模組中之反應室的溫度可維持恆定,其相較於在每次運轉前將基板加熱至製程溫度的反應器可改善生產量。此外,在集束型製程設備中,可減少將反應室泵至基板間所要的製程壓力位準之時間。在本發明之一些實施例中,沉積製程可以在包括多個反應室之集束型製程設備中進行,其中可以使用每個個別反應室,以使基板暴露於個別的前驅氣體,並且基板可以在不同的反應室之間輸送,以便暴露於多種前驅氣體,基板的輸送係在受控環境下進行,以防止基板的氧化/污染。在本發明之一些實施例中,沉積製程可以在包括多個反應室之集束型製程設備中進行,其中每個個別反應室可以構造成將基板加熱至不同的沉積溫度。
獨立式反應器可配備有晶圓載入室(load-lock)。在那個情況下,在每次運轉之間沒有必要冷卻反應空間。在一些實施例中,用於沉積氮化鈦膜的沉積製程可以包含複數個沉積循環,例如,ALD循環或循環式CVD循環。
在一些實施例中,循環沉積製程用於在基板上形成氮化鈦膜,並且循環沉積製程可以是ALD型製程。在一些實施例中,循環沉積可以是混合式ALD/CVD或循環式CVD製程。例如,在一些實施例中,ALD製程之成長速率相較於CVD製程可能是較低的。一種增加成長速率之方法可以在比ALD製程中通常使用之溫度更高的基板溫度下操作,從而導致化學氣相沉積製程,但是仍利用前驅物的依序引入,這樣的製程可以稱為循環式CVD。
依據本發明之一些實施例,ALD製程可以用於在基板(例如,部分製造的半導體裝置結構)上沉積氮化鈦膜。在本發明之一些實施例中,每個ALD循環包括兩個不同的沉積步驟或階段。在沉積循環之第一階段(「金屬階段」)中,使上面需要沉積的基板表面與包含金屬源前驅物之第一氣相反應物接觸,金屬源前驅物被化學吸附至基板表面上,從而在基板表面上形成不超過約一個單層的反應物物種。在沉積之第二階段(「氮氣階段」)中,使上面需要沉積的基板表面與包含氮源前驅物之第二氣相反應物接觸,其中氮源前驅物可以與基板表面上的鈦物種反應,以形成氮化鈦層。
在本發明之一些實施例中,第一氣相反應物可以包含含金屬源前驅物,其在此亦稱為「金屬化合物」。在一些實施例中,第一氣相反應物可以包含四碘化鈦(TiI4
)前驅物。
在本發明之一些實施例中,使基板與包含四碘化鈦(TiI4
)前驅物之第一氣相反應物接觸可以包括使基板暴露於(亦即,接觸)四碘化鈦(TiI4
)前驅物達約0.01秒至約60秒之間,約0.05秒至約10秒之間或約0.1秒至約5.0秒之間的時段。此外,在基板與四碘化鈦(TiI4
)前驅物接觸期間,四碘化鈦(TiI4
)前驅物的流速可以小於2000 sccm 或小於500 sccm,或者甚至小於100 sccm。此外,在基板與基板上方之四碘化鈦(TiI4
)前驅物接觸期間,四碘化鈦(TiI4
)前驅物的流速可以是約1至2000 sccm,約5至1000 sccm或約10至約500 sccm。
過多的四碘化鈦(TiI4
)前驅物及反應副產物(如果有的話)可以例如藉由用惰性氣體泵送來從表面移除。例如,在本發明之一些實施例中,所述方法可以包括沖洗循環,其中沖洗基板表面達小於約2.0秒之時段。過多的金屬源前驅物及任何反應副產物可以藉助於由與反應室流體連通之抽氣系統所產生之真空來移除。
在沉積循環之第二階段(「氮氣階段」)中,可以使基板與包含氮源前驅物之第二氣相反應物接觸。在本發明之一些實施例中,氮源前驅物可以包含氨(NH3
)、聯氨(N2
H4
)、三氮烷(N3
H5
)、三級丁基聯氨(C4
H9
N2
H3
)、甲肼(CH3
NHNH2
)、二甲肼(CH3
)2
N2
H2
)或氮氣電漿中之至少一者。
在本發明之一些實施例中,使基板接觸(亦即,暴露於)氮源前驅物可以包括使氮源前驅物與基板接觸達0.1秒至2.0秒或約0.01秒至約10秒或小於約20秒或小於約10秒或甚至小於約5秒之時段。在氮源前驅物與基板接觸期間,氮源前驅物的流速可以小於30 slm或小於20 slm或小於10 slm或小於5 slm或甚至小於1 slm。
包含氮源前驅物的第二氣相反應物可以與留在基板上的鈦物種反應。在一些實施例中,第二階段前驅物可以包含氨(NH3
),並且與留在基板上的鈦物種的反應可以沉積氮化鈦層。
過多的第二氣相反應物(例如,氮源前驅物)及反應副產物(如果有的話)可以例如藉由沖洗氣體脈衝及/或由抽氣系統所產生之真空來從基板表面移除。沖洗氣體較佳地是任何惰性氣體,例如,在限制性的情況下,氬氣(Ar)、氮氣(N2
)或氦氣(He)。如果插入沖洗(亦即,沖洗氣體脈衝)或其他反應物移除步驟,則通常將一個階段視為緊接在另一階段之後。
可以將基板與第一氣相反應物(亦即,四碘化鈦源前驅物)及第二氣相反應物(亦即,氮源前驅物)交替接觸之沉積循環重複一或多次,直至沉積到所要厚度的氮化鈦膜為止。應該理解在本發明之一些實施例中,基板與第一氣相反應物及第二氣相反應物接觸之順序可以使得基板先與第二氣相反應物接觸,接著再與第一氣相反應物接觸。此外,在一些實施例中,循環式沉積製程可以包括在使基板與第二氣相反應物(例如,氮源前驅物))接觸一或多次之前,使基板與第一氣相反應物(亦即,鈦源前驅物)接觸一次或多次,並且類似地,可以替代地包括在使基板與第一氣相反應物接觸一次或多次之前,使基板與第二氣相反應物接觸一或多次。
此外,本發明之一些實施例可以包括非電漿反應物,例如,第一及第二氣相反應物實質上沒有離子化反應性物種。在一些實施例中,第一及第二氣相反應物實質上沒有離子化反應性物種、激發物種或自由基物種。例如,第一氣相反應物及第二氣相反應物皆可以包括非電漿反應物,以防止對底層基板的離子化損壞及由此所產生的相關缺陷。當底層基板包含易碎之製造的或至少部分製造的半導體裝置結構時,非電漿反應物的使用可能是特別有用的,因為高能電漿物種可能造成裝置性能特性的損害及/或惡化。
本文所述之使用四碘化鈦((TiI4
)前驅物及氮源前驅物來沉積氮化鈦層的循環式沉積製程可以在具有經加熱基板之ALD或CVD沉積系統中進行。例如,在一些實施例中,方法可以包括加熱基板至約300℃至約500℃之間的溫度,或甚至加熱基板至約200℃至約500℃之間的溫度。當然,用於任何給定之循環式沉積製程(諸如,ALD反應)的適當溫度範圍將取決於表面終端處及所包含之反應物物種。在此,溫度取決於所使用的前驅物而有所不同且通常係約700℃或低於約700℃。在一些實施例中,對於氣相沉積製程,沉積溫度通常係約100℃或高於約100℃,在一些實施例中,沉積溫度係介於約100℃與約250℃之間,以及在一些實施例中,沉積溫度係介於約120℃與約200℃之間。在一些實施例中,沉積溫度係低於約500℃或低於約400℃或低於約350℃或低於約300℃。在一些實例中,沉積溫度可係低於約200℃或低於約150℃或甚至低於約100℃。在一些實例中,沉積溫度可係高於約20℃或高於約50℃或甚至高於約75℃。在本發明之一些實施例中,沉積溫度(亦即,在沉積期間之基板的溫度)係約400℃。
在一些實施例中,氮化鈦膜之成長速率係約0.005 Å/循環至約5 Å/循環或約0.01 Å/循環至約2.0 Å/循環。在一些實施例中,氮化鈦膜之成長速率係大於約0.05 Å/循環或大於約0.1 Å/循環或大於約0.15 Å/循環或大於約0.20 Å/循環或大於約0.25 Å/循環或甚至大於約0.3 Å/循環。在一些實施例中,氮化鈦膜之成長速率係小於約2.0 Å/循環或小於約1.0 Å/循環或小於約0.75 Å/循環或小於約0.5 Å/循環或甚至小於約0.2 Å/循環。在本發明之一些實施例中,對於約400℃的沉積溫度,氮化鈦膜的生長速率可以係約0.4 Å/循環。在本發明之一些實施例中,對於約300℃的沉積溫度,氮化鈦膜的成長速率可以是約0.20 Å/循環。
本發明之實施例可以包括可由圖1之示例性循環式沉積方法100來更詳細說明的循環式沉積。方法100可以從製程方塊110開始,製程方塊110包括提供至少一個基板至反應室中且加熱基板至沉積溫度。例如,基板可以包括一或多個部分製造的半導體裝置結構,反應室可以包括原子層沉積反應室,並且基板可以被加熱至約小於500℃的沉積溫度。此外,可以控制反應室內的壓力,以在反應室中提供減少的氣壓。例如,在循環式沉積製程中反應室內的壓力可以小於5托或小於3托或甚至小於1托。
方法100可以接著繼續進行製程方塊120,其包括使基板與四碘化鈦(TiI4
)前驅物接觸,例如,可以使基板與四碘化鈦(TiI4
)接觸約2秒的時段。在使基板與四碘化鈦(TiI4
)前驅物接觸之後,可藉由沖洗/抽氣製程將過多的四碘化鈦(TiI4
)前驅物及任何反應副產物從反應室移除。方法100可以接著繼續進行製程方塊130,其包括使基板與氮源前驅物(例如,氨(NH3
)接觸約2秒的時段。在使基板與氮源前驅物接觸之後,可以藉由沖洗/抽氣製程將過多的氮源前驅物及任何反應副產物從反應室移除。
在示例性循環式沉積方法100中,基板交替地且依序地與四碘化鈦(TiI4
)前驅物接觸(製程方塊120)及與氮源前驅物接觸(製程方塊130)可以構成一個沉積循環。在本發明之一些實施例中,沉積氮化鈦膜之方法可以包括重複這個沉積循環一或多次。例如,方法100可以接著至決定閘140,其判定是否循環式沉積方法100要繼續或經由製程方塊150離開。決定閘140係根據所沉積之氮化鈦膜的厚度來判定,例如,如果氮化鈦膜的厚度對於所要裝置結構而言是不足的,則方法100可以返回至製程方塊120,並且可以重複使基板與四碘化鈦(TiI4
)前驅物接觸及使基板與氮源前驅物接觸之製程一或多次。一旦氮化鈦膜已經沉積至所要的厚度,方法可以經由製程方塊150離開,並且可以使氮化鈦膜及下面的半導體結構經受額外的製程,以形成一個或多個裝置結構。
包含依據本文所述之一些實施例沉積的氮化鈦之膜或層可以是連續的薄膜。在一些實施例中,包括依據本文所述之一些實施例沉積的氮化鈦膜之薄膜可以在低於約100奈米或低於約60奈米或低於約50奈米或低於約40奈米或低於約30奈米或低於約25奈米或低於約20奈米或低於約15奈米或低於約10奈米或低於約5奈米或低於約2奈米或更低的厚度下成連續的。本文所提及之連續性可以是實體連續性或電氣連續性。在一些實施例中,膜為實體連續時的厚度可能不同於膜為電氣連續時的厚度,並且膜為電氣連續時的厚度可能不同於膜為實體連續時的厚度。
在一些實施例中,依據本文所述之一些實施例沉積的氮化鈦膜可以具有約20奈米至約100奈米的厚度。在一些實施例中,依據本文所述之一些實施例沉積的氮化鈦膜可以具有約20奈米至約60奈米之厚度。在一些實施例中,依據本文所述之一些實施例沉積的氮化鈦膜可以具有約1奈米至約10奈米之厚度。在一些實施例中,依據本文所述之一些實施例沉積的氮化鈦膜可以具有大於約20奈米或大於約30奈米或大於約40奈米或大於約50奈米或大於約60奈米或大於約100奈米或大於約250奈米或大於約500奈米或更大之厚度。在一些實施例中,依據本文所述之一些實施例沉積的氮化鈦膜可以具有小於約50奈米或小於約30奈米或小於約20奈米或小於約15奈米或小於約10奈米或小於約5奈米或小於約3奈米或小於約2奈米或甚至小於約1奈米之厚度。
在本發明之一些實施例中,氮化鈦膜可以沉積在三維結構(例如,包括高縱橫比特徵之非平面基板)上。在一些實施例中,在具有大於約2、大於約5、大於約10、大於約25、大於約50或甚至大於約100的縱橫比(高度/寬度)之結構中,氮化鈦膜之階梯覆蓋率(step coverage)可以等於或大於約50%或大於約80%或大於約90%或大於約95%或大於約98%或大於約99%或更大。
當相較於習知技藝沉積方法,本文所述之示例性循環式沉積方法可以用於沉積具有降低的電阻率之氮化鈦膜。更詳細地,圖2A說明電阻率與在使用習知技藝方法以四氯化鈦(TiCl4
)前驅物及替代地使用本發明之實施例(亦即,循環式沉積製程)以四碘化鈦(TiI4
)前驅物沉積一些氮化鈦膜之循環式沉積期間的基板溫度之間的關係之曲線圖。應該注意到,圖2A中存在之所有數據係根據具有約100埃之厚度的氮化鈦膜所收集。由線200所表示之數據說明使用四氯化鈦(TiCl4
)前驅物在各種基板溫度下所沉積之一些氮化鈦膜的電阻率。由線202所表示之數據說明依據本發明之實施例使用四碘化鈦(TiI4
)前驅物在各種基板溫度下所沉積之一些氮化鈦膜的電阻率。圖2A中之電阻率數據的檢驗清楚地表示,對於一個給定的基板溫度,使用四碘化鈦(TiI4
)前驅物沉積之氮化鈦膜的電阻率(μΩ-cm)明顯低於使用四氯化鈦(TiCl4
)前驅物沉積之氮化鈦膜的電阻率(μΩ-cm)。例如,在本發明之一些實施例中,可以在低於350℃的基板溫度下使用四碘化鈦(TiI4
)前驅物沉積氮化鈦層,其中氮化鈦層具有小於400μΩ-cm的電阻率。在本發明之一些實施例中,可以在低於400℃的基板溫度下使用四碘化鈦(TiI4
)前驅物沉積氮化鈦層,其中氮化鈦層具有小於200 μΩ-cm的電阻率。在本發明之一些實施例中,可以在低於450℃的基板溫度下使用四碘化鈦(TiI4
)前驅物沉積氮化鈦層,其中氮化鈦層具有小於125 μΩ-cm的電阻率。
用於說明依據本發明的實施例所沉積之氮化鈦膜的電阻率之另外的數據顯示於圖2B中,圖2B係說明依據本發明的實施例所沉積之一些氮化鈦膜的電阻率(μΩ-cm)與膜厚度之間的關係之曲線圖。應該注意到,用於產生圖2B中之數據的所有氮化鈦膜係使用四碘化鈦(TiI4
)前驅物在450℃的基板溫度下所沉積而成。在一些實施例中,可以沉積厚度小於100埃且電阻率小於100 μΩ-cm之氮化鈦膜。在一些實施例中,可以沉積厚度小於50埃且電阻率小於200 μΩ-cm之氮化鈦膜。在一些實施例中,可以沉積厚度小於40埃且電阻率小於250 μΩ-cm之氮化鈦膜。在本發明之一些實施例中,可以沉積厚度小於40埃且電阻率小於150 μΩ-cm之氮化鈦膜。
本文所揭露之示例性循環式沉積方法亦可以沉積具有改善的平均均方根(r.m.s)表面粗糙度之氮化鈦膜。例如,在一些實施例中,氮化鈦膜可以具有小於4埃或小於2埃或甚至小於0.5埃之平均均方根表面粗糙度(Ra
)(剛沉積)。剛沉積之氮化鈦膜的平均均方根表面粗糙度(Ra
)可以使用原子力顯微鏡例如藉由掃描約100 μm × 100 μm的表面積來測定。
相較於習知沉積方法,本文所揭露之示例性循環式沉積方法亦可以沉積具有增加的密度之氮化鈦膜。例如,在本發明之一些實施例中,氮化鈦膜可以具有大於4.8g/cm3
或大於5.0g/cm3
或甚至大於5.3g/cm3
之密度。在一些實施例中,當在小於約300℃之沉積溫度下沉積時,依據本發明之實施例所沉積的氮化鈦膜可以具有等於或大於約4.85g/cm3
之密度。在一些實施例中,當在小於約400℃之沉積溫度下沉積時,依據本發明之實施例所沉積的氮化鈦膜可以具有等於或大於約5.25g/cm3
之密度。
本文所揭露之示例性循環式沉積方法亦可以沉積具有改善的晶體結構之氮化鈦膜。更詳細地,圖3A係顯示依據本發明之實施例所沉積的一些氮化鈦膜之2θ射線繞射(XRD)掃描的曲線圖。例如,由線300所表示之數據係根據使用四碘化鈦(TiI4
)作為鈦源前驅物在300℃的基板溫度下沉積之厚度約為180埃的氮化鈦膜所測量的,而由線302所表示之數據係根據使用四碘化鈦(TiI4
)作為鈦源前驅物在400℃的基板溫度下沉積之厚度約為180埃的氮化鈦膜所測量的。兩組XRD數據清楚地在由符號304所表示之位置及由符號306所表示之位置處顯示峰值,其中由符號304所表示之峰值對應於<111>晶體結構,而由符號306所表示之峰值對應於 <200>晶體結構。依據本發明之實施例所沉積的氮化鈦膜之晶體品質的指示可以由XRD數據中之峰值的寬度來確定,並且具體地,晶體品質可以藉由符號304所表示之<111>晶體結構峰值的半高全寬(FWHM)值之檢驗來確定。例如,在本發明之一些實施例中,可以使用四碘化鈦(TiI4
)前驅物在小於或等於400℃之基板溫度下沉積氮化鈦,並且所獲得的氮化鈦膜可以包括如圖3A的XRD數據中之峰值304所示的<111>晶體結構,XRD中之峰值304具有小於1°的FWHM。在本發明之一些實施例中,可以使用四碘化鈦(TiI4
)前驅物在小於或等於300℃之基板溫度下沉積氮化鈦,並且所獲得的氮化鈦膜可以包括如圖3A的XRD數據中之峰值304所示的<111>晶體結構,XRD中之峰值304具有小於1°的FWHM。
依據本發明之實施例所沉積的氮化鈦膜之晶體品質的進一步指示可以藉由檢驗圖3A中之XRD峰值304及306的相對強度來確定。例如,由線300及302所表示之XRD數據均由對應於<111>晶體結構之XRD峰值304來主導,並且具有對應於<200>晶體結構之較小的XRD峰值306。依據本發明之實施例所沉積的氮化鈦膜之晶體品質可以由<111>晶體結構(XRD峰值304)與<200>晶體結構(XRD峰值306)的XRD強度比來表示。例如,在一些實施例中,XRD強度比<111>:<200>可以大於1:1或大於2:1或大於3:1或大於4:1或甚至大於5:1。在一些實施例中,對於使用四碘化鈦前驅物在等於或小於約400℃之沉積溫度下沉積的氮化鈦,XRD強度比<111>:<200>可以大於2:1或大於2.5:1或甚至大於3:1。在一些實施例中,對於使用四碘化鈦前驅物在等於或小於約300℃之沉積溫度下沉積的氮化鈦,XRD強度比<111>:<200>可以大於2:1,大於2.5:1或甚至大於3:1。此外,在一些實施例中,對於在約300℃至約400℃之間的沉積溫度,使用四碘化鈦前驅物所沉積之氮化鈦膜的XRD強度比<111>:<200>可以實質上與溫度無關。
相較於本文所揭露之循環式沉積方法(亦即,包含四碘化鈦前驅物的循環式沉積製程),圖3B說明依據習知技藝方法使用四氯化鈦(TiCl4
)作為鈦源前驅物所沉積之一些氮化鈦膜的2θ射線繞射(XRD)掃描。標記為308A、308B及308C的XRD峰值表示包含<111>晶體結構之氮化鈦膜,其在約400℃的基板溫度下沉積(XRD峰值308A),在約350℃的基板溫度下沉積(XRD峰值308B)及在約300℃的基板溫度下沉積(XRD峰值308℃)。此外,標記為310A、310B及310C的XRD峰值表示包含<200>晶體結構之氮化鈦膜,其在約400℃的基板溫度下沉積(XRD峰值310A),在約350℃的基板溫度下沉積(XRD峰值310B)及在約300℃的基板溫度下沉積(XRD峰值310C)。
如本文先前所述,氮化鈦膜的晶體品質之指示可以由<111>晶體結構與<200>晶體結構的XRD峰值強度比來給出。圖3B的檢驗說明當使用四氯化鈦沉積之氮化鈦膜的沉積溫度從約400℃降低至約350℃,並且進一步降低至約300℃時,XRD峰值強度比<111>:<200 >相應地從在約400℃的沉積溫度下之約2:1變成在約350℃的沉積溫度下之約1:1.25以及在約300℃的沉積溫度下之約1:2。對於使用四氯化鈦所沉積之氮化鈦膜的XRD峰值強度比<111>:<200>中所觀察到的變化比對於使用四碘化鈦所沉積之氮化鈦膜的圖3A所示之變化(其中XRD峰值強度比<111>:<200>係明顯較高且對沉積溫度依賴性較小)明顯。
在本發明之一些實施例中,金屬源前驅物可以包括四碘化鈦(TiI4
)前驅物,以及氮源前驅物可以包括氨(NH3
),以及藉由本發明之方法所沉積的膜可以包括氮化鈦膜。在一些實施例中,氮化鈦膜的鈦原子百分比(亦即,鈦含量)可以大於48%或大於49%或甚至大於50%。在本文所概述之實施例中,元素之原子濃度可以使用拉塞福回向散射(Rutherford backscattering,RBS)來測定。
相較於藉由習知技藝方法所沉積之氮化鈦膜,本文所揭露之示例性循環式沉積方法亦可以沉積具有改善之雜質濃度的氮化鈦膜。更詳細地,圖4係說明在一些氮化鈦膜內之雜質的原子百分比(at-%)與在沈積期間的基板溫度之間的關係之曲線圖。說明使用一般的四氯化鈦(TiCl4
)前驅物(如圓形數據標記所表示)所沉積之氮化鈦膜的百分比雜質濃度數據,並且亦說明使用本發明之實施例的四碘化鈦(TiI4
)前驅物(如十字數據標記所表示)所沉積之氮化鈦膜的百分比雜質濃度數據。應該注意到,圖4所表示之雜質濃度數據使用X射線光電子能譜儀(XPS)來獲得。圖4所示之雜質濃度數據的檢驗清楚地表示,對於一個給定的沉積溫度(℃),相較於使用四氯化鈦(TiCl4
)前驅物所沉積之氮化鈦膜,使用四碘化鈦(TiI4
)前驅物所沉積之氮化鈦膜具有較低的原子百分比(at-%)雜質濃度 。例如,對於使用四碘化鈦(TiI4
)前驅物在小於或等於250℃的基板溫度下所沉積之氮化鈦膜,氮化鈦膜具有小於3%的原子百分比(at-%)雜質濃度。在一些實施例中,對於使用四碘化鈦(TiI4
)前驅物在小於或等於300℃的基板溫度下所沉積之氮化鈦膜,氮化鈦膜具有小於2%的原子百分比(at-%)雜質濃度。在一些實施例中,對於使用四碘化鈦(TiI4
)前驅物在小於或等於350℃的基板溫度下所沉積之氮化鈦膜,氮化鈦膜具有小於1%的原子百分比(at-%)雜質濃度。在一些實施例中,對於使用四碘化鈦(TiI4
)前驅物在小於或等於400℃的基板溫度下所沉積之氮化鈦膜,氮化鈦膜具有小於0.5%的原子百分比(at-%)雜質濃度。在一些實施例中,依據本發明所沉積之氮化鈦膜內的雜質可以包括但不限於氧(O)、碘(I)及氫(H)。
在本發明之一些實施例中,本文所揭露之沉積方法可以用於沉積其他形式的氮化鈦,例如,三元氮化鈦。因此,本文所揭露之方法可以用於沉積三元氮化鈦,例如,氮化鈦矽(TiSiN)、氮氧化鈦(TiON)或氮化鈦鋁(TiAlN)。作為一個非限制性實例,用於沉積三元氮化鈦的一個沉積循環可以包括使基板與包含鈦源前驅物之第一氣相反應物接觸;使基板與包含氮源前驅物之第二氣相反應物接觸;以及 使基板與包含矽源前驅物、氧源前驅物、鋁源前驅物中之至少一者的第三氣相反應物接觸。
在本發明之一些實施例中,第一氣相反應物可以包含四碘化鈦(TiI4
)前驅物。在本發明之一些實施例中,第二氣相反應物可以包括氮源前驅物,例如,氨(NH3
)、聯氨(N2
H4
)、三氮烷(N3
H5
)、三級丁基聯氨(C4
H9
N2
H3
)、甲肼(CH3
NHNH2
)、二甲肼(CH3
)2
N2
H2
)或氮氣電漿中之至少一者。
在一些實施例中,第三氣相反應物可以包含矽源前驅物,並且所沉積之三元氮化鈦可以包含氮化鈦矽(TiSiN)。在一些實施例中,矽源前驅物可以包含矽烷(SiH4
)、乙矽烷(Si2
H6
)、丙矽烷(Si3
H8
)、氯矽烷(SiH3
Cl)、二氯矽烷(SiH2
Cl2
)、四氯化矽(SiCl4
)、四碘化矽(SiI4
)、六氯乙矽烷(Si2
Cl6
)、三氯矽烷(SiHCl3
)、甲矽烷(SiCH6
)中之至少一者。
在本發明之一些實施例中,第三氣相反應物可以包含氧源前驅物,並且所沉積之三元氮化鈦可以包含氮氧化鈦(TiON)。在一些實施例中,氧氣前驅物可以包含臭氧(O3
)、自由基氧、原子氧(O)、分子氧(O2
)、氧氣電漿、水(H2
O)、酒精、過氧化氫(H2
O2
)中之至少一者。
在本發明之一些實施例中,第三氣相反應物可以包含鋁源前驅物,並且所沉積之三元氮化鈦可以包含氮化鈦鋁(TiAlN)。在一些實施例中,鋁源前驅物可以包含三甲鋁(TMA)、三乙鋁(TEA)、三氯化鋁(AlCl3
)、氫化二甲基鋁(DMAH)中之至少一者。
在本發明之一些實施例中,使基板與第三氣相反應物接觸可以包括使第三氣相反應物接觸(亦即,暴露於)基板達0.1秒至2.0秒或0.01秒至10秒或小於20秒或小於10秒或甚至小於5秒之時段。在第三氣相反應物與基板接觸期間,第三氣相反應物的流速可以小於10 slm或小於1 slm或甚至小於0.1 slm。
在本發明之一些實施例中,沉積循環的每個接觸階段之後可以是一個後續沖洗循環,其中過多的氣相反應物及反應副產物(如果有的話)例如藉由沖洗氣體脈衝及/或由抽氣系統所產生之真空從基板移除。在一些實施例中,使基板與第一氣相反應物接觸、沖洗基板、使基板與第二氣相反應物接觸、沖洗基板、使基板與第三氣相反應物接觸以及沖洗基板之沉積循環可以重複一或多次直到在基板上形成所要厚度的三元氮化鈦膜為止。亦應該注意到,用於沉積三元氮化鈦所揭露之方法並非侷限於第一、第二及第三氣相反應物的任何特定接觸順序。作為一個非限制性實例,基板可以與第一氣相反應物接觸,然後與第三氣相反應物接觸,最後與第二氣相反應物接觸。此外,在使基板與後續的氣相反應物接觸之前,基板與特定的氣相反應物接觸可以重複一或多次。作為一個非限制性實例,基板可以與第一氣相反應物接觸一或多次,然後與第二氣相反應物接觸一或多次,最後與第三氣相反應物接觸一或多次。
藉由本文揭露之循環式沉積製程所沉積的氮化鈦膜可以使用於各種情況中,例如,作為電極或電極的至少一部分,其構造成用於提供電流至一或多個半導體裝置結構。在一些實施例中,本發明之氮化鈦膜可以在CMOS裝置應用中用於作為一或多個CMOS裝置的電極之至少一部分。在替代實施例中,本發明之氮化鈦膜可以用於作為像動態隨機存取記憶體(DRAM)裝置的記憶裝置之低溫電極,其中本發明的方法所允許之降低的沉積溫度可以防止記憶裝置的區域之不需要的氧化。在本發明之一些實施例中,本發明的氮化鈦膜可以用於作為任何數量的記憶裝置及記憶裝置的組件(例如,NAND、VNAND或像埋入式字元線的組件)之低溫且低電阻率電極。
更詳細地,藉由本文發明之循環式沉積製程所沉積的氮化鈦膜可以用於作為CMOS裝置結構的電極之至少一部分。為了說明使用本發明之氮化鈦膜的益處,圖5A-5C說明當前的半導體裝置製造程序及其中發現的缺點。例如,圖5A說明部分製造的半導體裝置結構500之簡化剖面圖。應該注意到,圖5A-5C之部分製造的半導體結構500、510及514係簡化的示意圖,並且不包括某些特徵及裝置層,例如,電晶體結構、閘極介電層、功函數金屬、黏著層、擴散層等。
部分製造的半導體裝置結構500(圖5A)包括基板502,基板502包括配置在其中或其上之一或多個裝置結構,例如,複數個PMOS及NMOS電晶體(未顯出)。部分製造的半導體裝置結構500亦可以包括介電層504,例如,層間介電材料(ILD),其中介電層504包括複數個高縱橫比特徵506,例如,一或多個閘極溝槽。為了電連接複數個PMOS及NMOS裝置,可以在介電材料504中所配置之一或多個溝槽結構506中沉積導電材料,例如,含金屬材料。例如,圖5B說明部分製造的半導體裝置結構510,其包括在介電層504中所配置之一或多個溝槽的鎢(W)金屬填充物512,作為非限制性實例。為了確保完全填充一個或多個溝槽結構,鎢金屬512所沉積之厚度大於一或多個溝槽的深度,並且因此鎢金屬512可以實質上覆蓋介電材料504的上表面。為了從介電材料504上之不需要的區域移除過多的鎢金屬512,可以對部分製造的半導體結構510進行研磨製程,例如,化學機械研磨(CMP),以平坦化鎢表面並移除在介電材料504之不需要的區域上所配置之過多的鎢。
圖5C說明在研磨製程後之部分製造的半導體裝置結構514,並且包括一些不期望的特徵。例如,鎢填充金屬512可以藉由化學氣相沉積(CVD)製程來沉積,這可能導致具有粗糙表面的鎢填充金屬512。此外,通常發現鎢金屬很難移除,並且可能需要不可接受的過度研磨量。鎢填充金屬的這種不利特性可能導致部分製造的半導體結構514包括具有「凹陷」特徵516(亦即,在一或多個溝槽結構內之不可接受的鎢損失)以及「蝕刻」特徵518(亦即,其中研磨製程導致介電層504之不希望部分的移除)的上表面。於是,需要能夠在CMOS裝置上進行一或多個電極層之低溫保形沉積的方法及相關的半導體裝置結構,其中電極的材料更適合於研磨製程。
在本發明之一些實施例中,常用的鎢金屬填充材料可以由依據本發明之實施例所沉積的氮化鈦膜來取代。在一些實施例中,氮化鈦膜不僅可以取代鎢金屬填充材料,而且還可以取代在CMOS裝置製造中常用的附加層,例如,黏著層、保護層及晶種層。可以參考圖6A-6C來更詳細描述本揭露之這樣的實施例,圖6A-6C說明用於在CMOS裝置結構上形成電極之半導體製造程序的剖面示意圖。
本發明之以下實施例可以使用非限制性實例的CMOS製造流程來說明,其在該項技藝中通常稱為「後閘極(gate last)」,其中閘極電極可以在源極/汲極區域形成及相關的高溫製程之後形成。然而,應該理解到,本發明所述之「後閘極」實施例係可以用於實例CMOS裝置結構(包括NMOS及PMOS裝置結構)之形成中的製程之非限制性示範實施例。
因此,圖6A說明部分製造的半導體裝置結構600,其包括基板602 (例如,矽基板),其中基板602進一步包括PMOS區域604及NMOS區域606。為簡單描述本發明之實施例,僅顯示單個PMOS區域604及單個NMOS區域606,然而,應該理解本文所揭露之方法及結構亦可以適用於包括大量PMOS區域及NMOS區域的半導體裝置結構。半導體基板602亦可以包括淺溝槽隔離層(STI) 608,其中STI 608分隔PMOS區域604與NMOS區域606且界定它們的輪廓。
在半導體基板602上配置一些特徵,其包括間隔物610(例如,氮化矽間隔物)及層間介電層612,其中層間介電層612包括一或多個溝槽結構614A及614B(例如,一個或多個閘極溝槽結構),在溝槽結構內可以形成電極(例如,閘極電極結構)。在本發明之一些實施例中,一或多個溝槽結構614A及614B可以包括大於約2或大於約5或大於約10或大於約25或大於約50或甚至大於約100的縱橫比(高度/寬度)。在本發明之一些實施例中,一或多個溝槽結構614A及614B可以包括小於60奈米或小於20奈米或甚至小於10奈米的溝槽寬度。
在溝槽結構614A及614B中且直接在基板602上配置界面層616,界面層616可以包括氧化矽且可以使用化學氧化製程選擇性地形成在基板602的表面上。亦在溝槽結構614A及614B中且直接在界面層616上配置高k值介電材料618,其中配置在PMOS區域上之高k值材料可以表示為PMOS介電層618A,而配置在NMOS區域上之高k值材料可以表示為NMOS介電層618B。
在本發明之一些實施例中,可以在高k值介電材料618上配置一或多個功函數金屬。例如,功函數金屬620可以配置在溝槽結構614B中且可以包括碳化鈦鋁(TiAlC)。在本發明之一些實施例中,一或多個功函數金屬亦可以配置在溝槽結構614A中(未顯示),亦即,在PMOS區域上。然而,在替代實施例中,PMOS區域上的功函數金屬可以藉由依據本發明的實施例之隨後的氮化鈦層沉積來取代。
圖6B說明在依據本發明之實施例沉積氮化鈦層624後之部分製造的半導體結構600(圖6A),從而形成部分製造的半導體裝置結構622。在一些實施例中,氮化鈦層624實質上填充一或多個溝槽結構614A及614B。在一些實施例中,氮化鈦層624可以直接配置例如在PMOS區域中之高k值介電材料618A上,其中氮化鈦層624直接配置在PMOS介電層618A上。在替代實施例中,一或多個功函數金屬可以配置例如在NMOS區域中之氮化鈦層624與高k值介電材料618之間,其中氮化鈦層624直接配置在功函數金屬620上。因此,在本發明之一些實施例中,使用四碘化鈦(TiI4
)前驅物所沉積之氮化鈦膜可以用於作為底層膜(例如,底層功函數金屬)上的保護層。在一些實施例中,氮化鈦保護層可以在低於400℃或低於350℃或甚至低於300℃的沉積溫度下沉積,並且可以對底層提供防氧化/防潮功能。由本發明的實施例所實現之氮化鈦沉積溫度的降低可以減少底層所經歷的熱積存。例如,氮化鈦保護層的低沉積溫度(例如,小於300℃)可以在從沉積設備卸載相關的基板時防止底層暴露於高溫環境,這可以藉由允許在降低的溫度下移除基板,導致底層的氧化減少以及整個沉積設備的基板產量之潛在增加。此外,即使在降低的沉積溫度下,低溫氮化鈦保護層亦可具有增加的密度,這可以增加氮化鈦保護層防止底層氧化的能力。例如,本發明之氮化鈦保護層可以具有大於4.9 g/cm3
或大於5.2 g/cm3
或甚至大於5.4 g/cm3
之密度。
在部分製造的半導體裝置結構622上沉積氮化鈦層624之後,可使用一個製程來移除過多的氮化鈦且平坦化部分製造的半導體裝置結構的上暴露表面。在本發明之一些實施例中,如圖6C之部分製造的半導體裝置結構626所示,可以使用研磨製程來移除過多的氮化鈦並平坦化上暴露表面。因此,本發明之實施例實質上用氮化鈦層624填充部分製造的半導體裝置結構626的一或多個溝槽結構,氮化鈦層624可以比常用的鎢填充金屬更適合於平坦化製程。例如,由於在一或多個溝槽中所配置之氮化鈦膜624的密度,氮化鈦膜624可以更適合於研磨製程的處理。在本發明之一些實施例中,在一或多個溝槽中所配置之氮化鈦膜624可以具有大於4.9g/cm3
或大於5.2g/cm3
或甚至大於5.4g/cm3
之密度。此外,在氮化鈦層624上執行的平坦化製程(例如,化學機械研磨(CMP)製程)可以產生平坦的氮化鈦表面628,其實質上沒有凹陷特徵。另外,在本發明之一些實施例中,與常用的鎢(W)填充金屬相反,使用氮化鈦膜可以實現較沒有衝擊性的研磨製程,亦即,降低對於過度研磨的要求,這可以導致在層間介電層630的上暴露表面實質上沒有腐蝕特徵。
因為氮化鈦的密度低於鎢,並且因為氮化鈦可以沉積成具有較光滑表面(亦即,較低的均方根平均表面粗糙度),所以當以依據本發明的實施例所沉積之氮化鈦膜來取代常用鎢金屬填充材料時,可以更容易地實現氮化鈦膜的平坦化。例如,在一些實施例中,平坦的氮化鈦膜628可以具有小於5埃或小於2埃或甚至小於0.5埃之平均均方根表面粗糙度(Ra
)。
在本發明之另外的實施例中,依據本文揭露的方法所沉積之氮化鈦膜可以用於作為記憶裝置的電極,並且具體地,可以用於作為動態隨機存取記憶體(DRAM)裝置之上電極。更詳細地,氮化鈦已用於作為DRAM裝置結構中的上電極,但是上氮化鈦電極通常在相對高的沉積溫度下(例如,在大於400°的沉積溫度下)沉積。在這樣高的沉積溫度下,會增加與介電結構(例如,ZrO2
/Al2
O3
/ZrO2
多層介電結構,其通常稱為ZAZ電容器)相鄰之下氮化鈦電極之不希望的氧化之可能性。
因此,在本發明之一些實施例中,如圖7所示,部分製造的半導體裝置結構700可以包括動態隨機存取記憶體(DRAM)裝置。更詳細地,DRAM裝置結構700可以包括下電極702,下電極702可以包括氮化鈦電極。可以在下電極702上配置介電結構704,介電結構704可以包括ZrO2
/Al2
O3
/ZrO2
多層介電結構,亦即,ZAZ電容器。可以在介電結構704上配置上電極706,並且上電極706可以包括依據本發明的實施例所沉積之氮化鈦電極。例如,在一些實施例中,上氮化鈦電極706可以在低於400℃或低於350℃或甚至低於300℃的溫度下沉積。即使在降低的沉積溫度下,上氮化鈦電極706可以具有小於400 μΩ-cm或小於200 μΩ-cm或甚至小於100 μΩ-cm的電阻率。在其它實施例中,上氮化鈦電極706可以具有大於4.9 g/cm3
或大於5.2 g/cm3
或甚至大於5.4 g/cm3
之密度。
因此,本發明之實施例允許沉積上氮化鈦電極706作為DRAM裝置結構700的一部分,同時保持高品質的氮化鈦層。此外,在一些實施例中,在低於300℃的基板溫度下沉積上電極706可以導致在下氮化鈦電極702與介電結構704之間所配置的界面708處實質上沒有氧化。防止或實質上防止下氮化鈦電極702的氧化可以避免DRAM裝置結構中之漏電流的增加並且避免在界面708處及其附近形成不期望的電荷陷阱(charge traps)。
本發明之實施例亦可以提供半導體裝置結構。因此,在一些實施例中,一種半導體裝置結構可以包括:一部分製造的半導體裝置結構;以及一氮化鈦電極,其配置在該部分製造的半導體裝置結構上,其中該氮化鈦電極具有小於400 μΩ-cm的電阻率。
在一些實施例中,該部分製造的半導體裝置結構可以包括CMOS裝置結構,例如,圖6C的結構626。在一些實施例中,該部分製造的半導體裝置結構可以包括動態隨機存取記憶體(DRAM)裝置結構,例如,圖7的結構700。在此所述之部分製造的半導體裝置結構係使用本發明之氮化鈦電極的半導體結構之非限制性實例,並且應該理解到,依據本發明的實施例所沉積之氮化鈦電極可以使用在任何數量的半導體裝置結構及電極應用中。
本發明之部分製造的半導體裝置結構(亦即,圖6C的結構626及圖7的結構700)包括氮化鈦電極(例如,結構626的氮化鈦電極624以及結構700的氮化鈦電極706)。在一些實施例中,氮化鈦電極(624、706)可以具有小於5埃或小於2埃或甚至小於0.5埃之平均均方根表面粗糙度(Ra
)。在一些實施例中,氮化鈦電極(624、706)可以具有大於4.9 g/cm3
或大於5.2 g/cm3
或甚至大於5.4 g/cm3
之密度。在一些實施例中,氮化鈦電極(624、706)可以包括具有小於1°之XRD FWHM及大於2:1之XRD強度比<111>:<200>的<111>晶體結構。在一些實施例中,氮化鈦電極(624、706)可以具有小於400 μΩ-cm或小於300 μΩ-cm或小於200 μΩ-cm或甚至小於100 μΩ-cm的電阻率。在一些實施例中,氮化鈦電極(624、706)在小於40埃的厚度下可以具有小於150μΩ-cm的電阻率。在一些實施例中,氮化鈦電極(624、706)可以具有小於3%或小於2%或甚至小於1%的原子百分比(at-%)雜質濃度。
在本發明之一些實施例中,部分製造的半導體裝置結構可以包括CMOS裝置結構,例如,圖6C的半導體結構626。在這樣的實施例中,部分製造的半導體裝置結構可以包括一或多個溝槽結構,並且氮化鈦電極624可以實質上填充一或多個溝槽結構。此外,在一或多個溝槽結構內所配置之氮化鈦電極624可以包括實質上沒有凹陷特徵之上暴露表面,從而導致氮化鈦電極的上平坦表面628具有小於5埃或小於2埃或甚至小於0.5埃的平均均方根表面粗糙度(Ra
)。
在本發明之一些實施例中,部分製造的半導體裝置結構可以包括動態隨機存取記憶體(DRAM)裝置結構,例如,圖7的半導體結構700。在這樣的實施例中,依據本發明實施例所沉積之氮化鈦電極可以包括上電極706。在這樣的實施例中,在下電極702與介電結構704之間所配置的界面708可以實質上沒有不需要的氧化產物。在本發明之一些實施例中,下電極702可以包括依據本發明實施例所沉積之氮化鈦層。
本發明之實施例亦可以包括構造成用於形成本發明之氮化鈦膜的反應系統。更詳細地,圖8示意性地說明包括反應室802之反應系統800,反應室進一步包括用於在預定壓力、溫度及環境條件下固持基板(未顯示)且用於將基板選擇性地暴露於各種氣體的機構。前驅反應物源804可以藉由導管或其它適當手段804A耦接至反應室802,並且可以進一步耦接至歧管、閥控制系統、質量流控制系統或用於控制源自前驅反應物源804之氣體前驅物的機構。由前驅反應物源804所供應之前驅物(未顯示)(反應物(未顯出))在室溫及標準大壓壓力條件下可以是液體或固體。這樣的前驅物可以在反應物源真空容器內汽化,所述容器可以在前驅物源腔室內維持在汽化溫度或以上。在這樣的實施例中,汽化的前驅物可以用載體氣體(例如,非活性或惰性氣體)來輸送及接著經由管道804A供給至反應室802中。在其他實施例中,前驅物在標準條件下可以為蒸氣。在這樣的實施例中,前驅物不需要汽化且可以不需要載體氣體。例如,在一個實施例中,前驅物可儲存在貯氣瓶中。反應系統800亦可以包括額外的前驅反應物源,這樣的前驅反應物源806亦可以如上所述藉由導管806A耦接至反應室。
沖洗氣體源808亦可經由導管808A耦接至反應室802,並且選擇性地供應各種惰性或稀有氣體至反應室802,以協助從反應室移除前驅氣體或廢氣。可以供應的各種惰性或稀有氣體可以由固體、液體或儲存氣體形式來產生。
圖8之反應系統800亦可以包括系統操作及控制機構810,其提供電子電路及機械組件,以選擇性地操作閥、歧管、泵及反應系統800中所包含之其他設備。這樣的電路及組件操作,以從各自的前驅物源804、806及沖洗氣體源808引入前驅物及沖洗氣體。系統操作及控制機構810亦控制氣體脈衝序列之時序、基板及反應室的溫度,反應室的壓力以及提供反應系統800之適當操作所必需之各種其他操作。操作及控制機構810可以包括控制軟體及電動或氣動控制閥,以控制前驅物、反應物及沖洗氣體流入及流出反應室802。控制系統可以包括執行特定任務之模組,諸如,軟體或硬體組件(例如,FPGA或ASIC)。模組可以有利地構造成存在於控制系統的可定址儲存媒體中且構造成用於執行一或多個製程。
熟悉相關技藝者理解到,本反應系統之其他配置亦是可能的,其包括不同數目及類別之前驅反應物源及沖洗氣體源。再者,這樣的人員亦將理解到,存在可用於實現將氣體選擇性地供給至反應室802中之目標的閥、導管、前驅物源、沖洗氣體源之多種配置。再者,作為反應系統之示意性圖示,已為簡單說明省去許多組件,並且這樣的組件可以包括例如各種閥、歧管、純化器、加熱器、容器、通風口及/或旁通管。
上述揭露內容之示範實施例並沒有限制本發明的範圍,因為這些實施例僅為本發明之實施例之示範,本發明的範圍由所附請求項及其合法均等物來定義。任何等效實施例意指在本發明的範圍內。實際上,除本文中所示及所述者之外,本發明之各種修改(諸如,所述元件之替代有用的組合)對於熟悉該項技藝者來說可根據描述而變得顯而易見。這樣的修改及實施例同樣意欲落在所附請求項之範圍內。
無
雖然本說明書以特別指出且明確主張被視為本發明的實施例之權利的申請專利範圍作為結論,但是當結合所附圖式來閱讀時,可以從本發明的實施例之某些實例的敘述更容易地確定本發明之實施例的優點,在所附圖式中:
圖1說明依據本發明之實施例的示例性循環式沉積方法之流程;
圖2A說明電阻率與使用四氯化鈦(TiCl4
)前驅物及使用四碘化鈦(TiI4
)前驅物沉積氮化鈦膜期間的基板溫度之間的關係之曲線圖;
圖2B說明依據本發明之實施例使用四碘化鈦(TiI4
)所沉積之一些氮化鈦膜的電阻率與厚度之間的關係之曲線圖;
圖3A說明從依據本發明之實施例使用四碘化鈦(TiI4
)前驅物所沉積的一些氮化鈦膜獲得之X射線繞射(XRD)數據;
圖3B說明從依據習知技藝方法使用四氯化鈦(TiCl4
)前驅物所沉積的一些氮化鈦膜獲得之X射線繞射(XRD)數據;
圖4係說明氮化鈦膜內之雜質的原子百分比與沈積期間的基板溫度之間的關係之曲線圖。說明使用一般的四氯化鈦(TiCl4
)前驅物所沉積之氮化鈦膜的百分比雜質濃度數據,並且亦說明使用本發明之實施例的四碘化鈦(TiI4
)前驅物所沉積之氮化鈦膜的百分比雜質濃度數據;
圖5A、5B及5C說明在製造電極期間所形成之習知技藝半導體裝置結構的剖面示意圖;
圖6A、6B及6C說明依據本發明之實施例的部分製造之半導體裝置結構及在這樣的部分製造之半導體裝置結構上形成電極之剖面示意圖;
圖7說明包括依據本發明之實施例所沉積的氮化鈦電極之動態隨機存取記憶體(DRAM)裝置結構的剖面示意圖;以及
圖8說明構造成用於實施本發明之方法的反應系統之示意圖。
Claims (28)
- 一種在基板上形成電極之方法,其包括: 使該基板與一包含四碘化鈦前驅物(TiI4 )之第一氣相反應物接觸; 使該基板與一包含氮源前驅物之第二氣相反應物接觸;以及 在該基板的一表面上沉積一氮化鈦層,從而形成該電極; 其中該氮化鈦層具有小於400 μΩ-cm的電阻率。
- 如請求項1之方法,其中使該基板與該第一氣相反應物接觸及使該基板與該第二氣相反應物接觸係包括一循環式沉積製程的一個沉積循環,且該方法進一步包括一或多個重複的沉積循環。
- 如請求項2之方法,其中該循環式沉積製程包括一原子層沉積製程或一環循式化學氣相沉積製程。
- 如請求項1之方法,其中該氮源前驅物包括氨(NH3 )、聯氨(N2 H4 )、三氮烷(N3 H5 )、三級丁基聯氨(C4 H9 N2 H3 )、甲肼(CH3 NHNH2 )、二甲肼(CH3 )2 N2 H2 )或氮氣電漿中之至少一者。
- 如請求項1之方法,其進一步包括將該基板加熱至小於400℃之溫度。
- 如請求項1之方法,其中該氮化鈦層具有小於2埃之平均均方根表面粗糙度(Ra )。
- 如請求項1之方法,其中該氮化鈦層具有大於5.4 g/cm3 之密度。
- 如請求項1之方法,其中該氮化鈦層在小於40埃之厚度下具有小於150 μΩ-cm之電阻率。
- 如請求項1之方法,其中該氮化鈦層的XRD峰值強度比<111>:<200>大於2:1。
- 如請求項1之方法,其中該氮化鈦層以大於95%之階梯覆蓋率來沉積。
- 如請求項1之方法,其中該基板係包括一包含有一或多個溝槽結構之複數個部分製造的半導體裝置結構。
- 如請求項11之方法,其中該氮化鈦層實質上填充該一或多個溝槽結構。
- 如請求項12之方法,其進一步包括執行一研磨製程,以從該部分製造的半導體裝置結構之上暴露表面平坦化及移除過多的氮化鈦,其中該研磨製程產生一實質上沒有凹陷特徵的平坦氮化鈦表面。
- 如請求項11之方法,其中該部分製造的半導體裝置結構包括一CMOS裝置結構或記憶裝置結構。
- 如請求項14之方法,其中該部分製造的半導體裝置結構包括一動態隨機存取記憶體(DRAM)裝置結構。
- 如請求項15之方法,其中該氮化鈦層包括該DRAM裝置的一上電極。
- 如請求項16之方法,其中該上電極在低於300℃的基板溫度下沉積。
- 如請求項1之方法,其中該氮化鈦層具有小於1%之原子百分比(at-%)雜質濃度。
- 一種半導體裝置結構,該結構包括: 一部分製造的半導體裝置結構;以及 一氮化鈦電極,其配置在該部分製造的半導體裝置結構上; 其中該氮化鈦電極具有小於400 μΩ-cm的電阻率。
- 如請求項19之結構,其中該氮化鈦電極具有小於2埃之平均均方根表面粗糙度(Ra )。
- 如請求項19之結構,其中該氮化鈦電極具有大於5.4 g/cm3 之密度。
- 如請求項19之結構,其中該氮化鈦電極在小於40埃之厚度下具有小於150 μΩ-cm之電阻率。
- 如請求項19之結構,其中該氮化鈦電極的XRD峰值強度比<111>:<200>大於2:1。
- 如請求項19之結構,其中該部分製造的半導體裝置結構包括一或多個溝槽結構,且該氮化鈦電極實質上填充該一或多個溝槽結構。
- 如請求項24之結構,其中該氮化鈦電極包括一實質上沒有凹陷特徵之平坦上表面。
- 如請求項19之結構,其中該部分製造的半導體裝置結構包括一CMOS裝置結構或一記憶裝置。
- 如請求項26之結構,其中該部分製造的半導體裝置結構包括一動態隨機存取記憶體(DRAM)裝置結構。
- 如請求項27之結構,其中該氮化鈦電極包括該DRAM裝置結構的一上電極。
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KR20210130646A (ko) | 2020-04-21 | 2021-11-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 방법 |
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- 2019-03-18 US US16/356,394 patent/US10847371B2/en active Active
- 2019-03-19 TW TW108109360A patent/TW201942960A/zh unknown
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2024
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US12020938B2 (en) | 2024-06-25 |
US20220351974A1 (en) | 2022-11-03 |
US20210028021A1 (en) | 2021-01-28 |
US10847371B2 (en) | 2020-11-24 |
KR20240035782A (ko) | 2024-03-18 |
KR20190113580A (ko) | 2019-10-08 |
KR102646467B1 (ko) | 2024-03-11 |
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