KR20070008569A - 웨이퍼 히터 조립체 - Google Patents
웨이퍼 히터 조립체Info
- Publication number
- KR20070008569A KR20070008569A KR1020067016437A KR20067016437A KR20070008569A KR 20070008569 A KR20070008569 A KR 20070008569A KR 1020067016437 A KR1020067016437 A KR 1020067016437A KR 20067016437 A KR20067016437 A KR 20067016437A KR 20070008569 A KR20070008569 A KR 20070008569A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- heating
- carbon
- carbon wire
- tube
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/813,119 US20050217799A1 (en) | 2004-03-31 | 2004-03-31 | Wafer heater assembly |
US10/813,119 | 2004-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20070008569A true KR20070008569A (ko) | 2007-01-17 |
Family
ID=35052985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067016437A KR20070008569A (ko) | 2004-03-31 | 2005-02-01 | 웨이퍼 히터 조립체 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050217799A1 (zh) |
JP (1) | JP2007537582A (zh) |
KR (1) | KR20070008569A (zh) |
CN (1) | CN101023197A (zh) |
TW (1) | TWI305656B (zh) |
WO (1) | WO2005103333A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170100666A (ko) * | 2015-02-25 | 2017-09-04 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 히터 및 반도체 장치의 제조 방법 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201041455A (en) * | 2002-12-16 | 2010-11-16 | Japan Science & Tech Agency | Plasma generation device, plasma control method, and substrate manufacturing method |
GB0410743D0 (en) * | 2004-05-14 | 2004-06-16 | Vivactiss Bvba | Holder for wafers |
JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
JP2006222214A (ja) * | 2005-02-09 | 2006-08-24 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
US7265066B2 (en) * | 2005-03-29 | 2007-09-04 | Tokyo Electron, Ltd. | Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation |
US7300891B2 (en) * | 2005-03-29 | 2007-11-27 | Tokyo Electron, Ltd. | Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation |
US7452793B2 (en) * | 2005-03-30 | 2008-11-18 | Tokyo Electron Limited | Wafer curvature estimation, monitoring, and compensation |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
JP4453021B2 (ja) * | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP2007012734A (ja) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | プラズマエッチング装置及びプラズマエッチング方法 |
US8454749B2 (en) * | 2005-12-19 | 2013-06-04 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
JP2007201128A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体及び半導体製造装置 |
US7723648B2 (en) * | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
JP4407685B2 (ja) * | 2006-10-11 | 2010-02-03 | セイコーエプソン株式会社 | 半導体装置の製造方法および電子機器の製造方法 |
KR100862588B1 (ko) * | 2006-12-26 | 2008-10-10 | 주식회사 테라세미콘 | 반응챔버의 히팅장치 |
US7671412B2 (en) * | 2007-02-15 | 2010-03-02 | Tokyo Electron Limited | Method and device for controlling temperature of a substrate using an internal temperature control device |
EP2062854B1 (en) * | 2007-08-03 | 2011-12-28 | Teoss CO., LTD. | Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same |
US8993939B2 (en) | 2008-01-18 | 2015-03-31 | Momentive Performance Materials Inc. | Resistance heater |
KR20090079540A (ko) * | 2008-01-18 | 2009-07-22 | 주식회사 코미코 | 기판 지지 장치 및 이를 갖는 기판 처리 장치 |
US20090308315A1 (en) * | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
US20100014097A1 (en) * | 2008-07-17 | 2010-01-21 | Nikon Corporation | Algorithm correcting for correction of interferometer fluctuation |
US20100247804A1 (en) * | 2009-03-24 | 2010-09-30 | Applied Materials, Inc. | Biasable cooling pedestal |
KR20120052287A (ko) * | 2009-08-06 | 2012-05-23 | 스미토모덴키고교가부시키가이샤 | 성막 장치 |
JP5570938B2 (ja) * | 2009-12-11 | 2014-08-13 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US20120085747A1 (en) * | 2010-10-07 | 2012-04-12 | Benson Chao | Heater assembly and wafer processing apparatus using the same |
KR20120105827A (ko) * | 2011-03-16 | 2012-09-26 | 삼성전자주식회사 | 정착장치용 발열체, 이를 구비한 정착장치 및 화상형성장치 |
WO2013142594A1 (en) * | 2012-03-20 | 2013-09-26 | Momentive Performance Materials Inc. | Resistance heater |
DE102012005916B3 (de) * | 2012-03-26 | 2013-06-27 | Heraeus Noblelight Gmbh | Vorrichtung zur Bestrahlung eines Substrats |
US9089007B2 (en) | 2012-04-27 | 2015-07-21 | Applied Materials, Inc. | Method and apparatus for substrate support with multi-zone heating |
CN102851652A (zh) * | 2012-09-28 | 2013-01-02 | 深圳市捷佳伟创新能源装备股份有限公司 | 一种用于mocvd设备的加热器 |
JP6165452B2 (ja) * | 2013-02-01 | 2017-07-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US9196514B2 (en) * | 2013-09-06 | 2015-11-24 | Applied Materials, Inc. | Electrostatic chuck with variable pixilated heating |
CN104731156B (zh) * | 2013-12-18 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种加热灯的监控方法 |
US11158526B2 (en) | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
US10006717B2 (en) | 2014-03-07 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adaptive baking system and method of using the same |
US9543171B2 (en) * | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
JP6630146B2 (ja) * | 2015-02-25 | 2020-01-15 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法および加熱部 |
CN109616434A (zh) | 2015-02-25 | 2019-04-12 | 株式会社国际电气 | 衬底处理装置及方法、半导体器件的制造方法以及加热部 |
JP6522481B2 (ja) * | 2015-10-05 | 2019-05-29 | クアーズテック株式会社 | 面状ヒータ |
US10161041B2 (en) | 2015-10-14 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermal chemical vapor deposition system and operating method thereof |
JP6730861B2 (ja) * | 2016-06-22 | 2020-07-29 | 日本特殊陶業株式会社 | 保持装置 |
JP6736386B2 (ja) * | 2016-07-01 | 2020-08-05 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記録媒体 |
JP6798017B6 (ja) | 2016-10-17 | 2021-01-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板にわたってパラメータ変動を修正する処理装置及び方法 |
US11164737B2 (en) | 2017-08-30 | 2021-11-02 | Applied Materials, Inc. | Integrated epitaxy and preclean system |
CN108682635B (zh) * | 2018-05-03 | 2021-08-06 | 拓荆科技股份有限公司 | 具有加热机制的晶圆座及包含该晶圆座的反应腔体 |
JP2020004526A (ja) * | 2018-06-26 | 2020-01-09 | クアーズテック株式会社 | カーボンワイヤーヒータ |
CN114072898A (zh) * | 2019-05-24 | 2022-02-18 | 应用材料公司 | 基板处理腔室 |
US11542604B2 (en) | 2019-11-06 | 2023-01-03 | PlayNitride Display Co., Ltd. | Heating apparatus and chemical vapor deposition system |
TWI711717B (zh) * | 2019-11-06 | 2020-12-01 | 錼創顯示科技股份有限公司 | 加熱裝置及化學氣相沉積系統 |
TWI727907B (zh) * | 2019-11-06 | 2021-05-11 | 錼創顯示科技股份有限公司 | 加熱裝置及化學氣相沉積系統 |
JP7248608B2 (ja) | 2020-02-04 | 2023-03-29 | 日本碍子株式会社 | 静電チャックヒータ |
JP7326187B2 (ja) | 2020-02-28 | 2023-08-15 | クアーズテック株式会社 | 面状ヒータ |
CN111725114B (zh) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 加热灯的位置校正装置 |
US11605544B2 (en) | 2020-09-18 | 2023-03-14 | Applied Materials, Inc. | Methods and systems for cleaning high aspect ratio structures |
CN114496692B (zh) * | 2020-11-11 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 加热组件、基片承载组件及其等离子体处理装置 |
CN113201728B (zh) * | 2021-04-28 | 2023-10-31 | 錼创显示科技股份有限公司 | 半导体晶圆承载结构及金属有机化学气相沉积装置 |
CN115424913A (zh) * | 2021-06-01 | 2022-12-02 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其可伸缩密封部 |
JP2023027962A (ja) * | 2021-08-18 | 2023-03-03 | 株式会社Screenホールディングス | 基板処理装置 |
CN115442927B (zh) * | 2022-11-04 | 2023-03-10 | 上海星原驰半导体有限公司 | 复合式控温盘 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2927857B2 (ja) * | 1990-01-19 | 1999-07-28 | 株式会社東芝 | 基板加熱装置 |
US5223113A (en) * | 1990-07-20 | 1993-06-29 | Tokyo Electron Limited | Apparatus for forming reduced pressure and for processing object |
JP3288200B2 (ja) * | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
JPH10102257A (ja) * | 1996-09-27 | 1998-04-21 | Nippon Process Eng Kk | 化学的気相成長法による成膜装置 |
TW452826B (en) * | 1997-07-31 | 2001-09-01 | Toshiba Ceramics Co | Carbon heater |
US6530994B1 (en) * | 1997-08-15 | 2003-03-11 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
US6688375B1 (en) * | 1997-10-14 | 2004-02-10 | Applied Materials, Inc. | Vacuum processing system having improved substrate heating and cooling |
KR100334993B1 (ko) * | 1998-12-01 | 2002-05-02 | 추후제출 | 히터 |
US6353209B1 (en) * | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
DE10059665C1 (de) * | 2000-12-01 | 2002-07-11 | Steag Hamatech Ag | Verfahren zum thermischen Behandeln von Substraten |
JP2002270346A (ja) * | 2001-03-09 | 2002-09-20 | Mitsubishi Heavy Ind Ltd | 加熱装置及びその製造方法並びに被膜形成装置 |
KR100547189B1 (ko) * | 2003-04-23 | 2006-01-31 | 스타전자(주) | 그라파이트 펠트를 이용하는 탄소 발열 장치의 제조 방법 |
-
2004
- 2004-03-31 US US10/813,119 patent/US20050217799A1/en not_active Abandoned
-
2005
- 2005-02-01 CN CNA2005800017834A patent/CN101023197A/zh active Pending
- 2005-02-01 KR KR1020067016437A patent/KR20070008569A/ko not_active Application Discontinuation
- 2005-02-01 JP JP2007506149A patent/JP2007537582A/ja not_active Withdrawn
- 2005-02-01 WO PCT/US2005/002766 patent/WO2005103333A2/en active Application Filing
- 2005-03-30 TW TW094110009A patent/TWI305656B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170100666A (ko) * | 2015-02-25 | 2017-09-04 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 히터 및 반도체 장치의 제조 방법 |
KR20190129141A (ko) * | 2015-02-25 | 2019-11-19 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 히터 및 반도체 장치의 제조 방법 |
KR20200123870A (ko) * | 2015-02-25 | 2020-10-30 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 히터 및 반도체 장치의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
WO2005103333A3 (en) | 2006-09-14 |
TW200540937A (en) | 2005-12-16 |
TWI305656B (en) | 2009-01-21 |
WO2005103333A2 (en) | 2005-11-03 |
JP2007537582A (ja) | 2007-12-20 |
CN101023197A (zh) | 2007-08-22 |
US20050217799A1 (en) | 2005-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |