WO2005103333A2 - Wafer heater assembly - Google Patents

Wafer heater assembly Download PDF

Info

Publication number
WO2005103333A2
WO2005103333A2 PCT/US2005/002766 US2005002766W WO2005103333A2 WO 2005103333 A2 WO2005103333 A2 WO 2005103333A2 US 2005002766 W US2005002766 W US 2005002766W WO 2005103333 A2 WO2005103333 A2 WO 2005103333A2
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
carbon
tube
heating assembly
heating
Prior art date
Application number
PCT/US2005/002766
Other languages
English (en)
French (fr)
Other versions
WO2005103333A3 (en
Inventor
David L. O'meara
Gerrit J. Leusink
Stephen H. Cabral
Anthony Dip
Cory Wajda
Raymond Joe
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2007506149A priority Critical patent/JP2007537582A/ja
Publication of WO2005103333A2 publication Critical patent/WO2005103333A2/en
Publication of WO2005103333A3 publication Critical patent/WO2005103333A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
PCT/US2005/002766 2004-03-31 2005-02-01 Wafer heater assembly WO2005103333A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007506149A JP2007537582A (ja) 2004-03-31 2005-02-01 ウェハヒータアッセンブリ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,119 US20050217799A1 (en) 2004-03-31 2004-03-31 Wafer heater assembly
US10/813,119 2004-03-31

Publications (2)

Publication Number Publication Date
WO2005103333A2 true WO2005103333A2 (en) 2005-11-03
WO2005103333A3 WO2005103333A3 (en) 2006-09-14

Family

ID=35052985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/002766 WO2005103333A2 (en) 2004-03-31 2005-02-01 Wafer heater assembly

Country Status (6)

Country Link
US (1) US20050217799A1 (zh)
JP (1) JP2007537582A (zh)
KR (1) KR20070008569A (zh)
CN (1) CN101023197A (zh)
TW (1) TWI305656B (zh)
WO (1) WO2005103333A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862588B1 (ko) * 2006-12-26 2008-10-10 주식회사 테라세미콘 반응챔버의 히팅장치
JP2010506381A (ja) * 2006-09-25 2010-02-25 東京エレクトロン株式会社 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ
WO2020242799A1 (en) * 2019-05-24 2020-12-03 Applied Materials, Inc. Substrate processing chamber

Families Citing this family (57)

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TW201041455A (en) * 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
GB0410743D0 (en) * 2004-05-14 2004-06-16 Vivactiss Bvba Holder for wafers
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2006222214A (ja) * 2005-02-09 2006-08-24 Dainippon Screen Mfg Co Ltd 熱処理装置
US7265066B2 (en) * 2005-03-29 2007-09-04 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
US7300891B2 (en) * 2005-03-29 2007-11-27 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
US7452793B2 (en) * 2005-03-30 2008-11-18 Tokyo Electron Limited Wafer curvature estimation, monitoring, and compensation
US7789962B2 (en) * 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
JP2007012734A (ja) * 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd プラズマエッチング装置及びプラズマエッチング方法
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP2007201128A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及び半導体製造装置
JP4407685B2 (ja) * 2006-10-11 2010-02-03 セイコーエプソン株式会社 半導体装置の製造方法および電子機器の製造方法
US7671412B2 (en) * 2007-02-15 2010-03-02 Tokyo Electron Limited Method and device for controlling temperature of a substrate using an internal temperature control device
EP2062854B1 (en) * 2007-08-03 2011-12-28 Teoss CO., LTD. Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same
US8993939B2 (en) 2008-01-18 2015-03-31 Momentive Performance Materials Inc. Resistance heater
KR20090079540A (ko) * 2008-01-18 2009-07-22 주식회사 코미코 기판 지지 장치 및 이를 갖는 기판 처리 장치
US20090308315A1 (en) * 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US20100014097A1 (en) * 2008-07-17 2010-01-21 Nikon Corporation Algorithm correcting for correction of interferometer fluctuation
US20100247804A1 (en) * 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal
KR20120052287A (ko) * 2009-08-06 2012-05-23 스미토모덴키고교가부시키가이샤 성막 장치
JP5570938B2 (ja) * 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
KR20120105827A (ko) * 2011-03-16 2012-09-26 삼성전자주식회사 정착장치용 발열체, 이를 구비한 정착장치 및 화상형성장치
WO2013142594A1 (en) * 2012-03-20 2013-09-26 Momentive Performance Materials Inc. Resistance heater
DE102012005916B3 (de) * 2012-03-26 2013-06-27 Heraeus Noblelight Gmbh Vorrichtung zur Bestrahlung eines Substrats
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
JP6165452B2 (ja) * 2013-02-01 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
CN104731156B (zh) * 2013-12-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种加热灯的监控方法
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US10006717B2 (en) 2014-03-07 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive baking system and method of using the same
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
KR102372555B1 (ko) * 2015-02-25 2022-03-08 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 및 반도체 장치의 제조 방법
JP6630146B2 (ja) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および加熱部
CN109616434A (zh) 2015-02-25 2019-04-12 株式会社国际电气 衬底处理装置及方法、半导体器件的制造方法以及加热部
JP6522481B2 (ja) * 2015-10-05 2019-05-29 クアーズテック株式会社 面状ヒータ
US10161041B2 (en) 2015-10-14 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal chemical vapor deposition system and operating method thereof
JP6730861B2 (ja) * 2016-06-22 2020-07-29 日本特殊陶業株式会社 保持装置
JP6736386B2 (ja) * 2016-07-01 2020-08-05 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記録媒体
JP6798017B6 (ja) 2016-10-17 2021-01-13 エーエスエムエル ネザーランズ ビー．ブイ． 基板にわたってパラメータ変動を修正する処理装置及び方法
US11164737B2 (en) 2017-08-30 2021-11-02 Applied Materials, Inc. Integrated epitaxy and preclean system
CN108682635B (zh) * 2018-05-03 2021-08-06 拓荆科技股份有限公司 具有加热机制的晶圆座及包含该晶圆座的反应腔体
JP2020004526A (ja) * 2018-06-26 2020-01-09 クアーズテック株式会社 カーボンワイヤーヒータ
US11542604B2 (en) 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI711717B (zh) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
TWI727907B (zh) * 2019-11-06 2021-05-11 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
JP7248608B2 (ja) 2020-02-04 2023-03-29 日本碍子株式会社 静電チャックヒータ
JP7326187B2 (ja) 2020-02-28 2023-08-15 クアーズテック株式会社 面状ヒータ
CN111725114B (zh) * 2020-06-30 2023-07-14 北京北方华创微电子装备有限公司 加热灯的位置校正装置
US11605544B2 (en) 2020-09-18 2023-03-14 Applied Materials, Inc. Methods and systems for cleaning high aspect ratio structures
CN114496692B (zh) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 加热组件、基片承载组件及其等离子体处理装置
CN113201728B (zh) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 半导体晶圆承载结构及金属有机化学气相沉积装置
CN115424913A (zh) * 2021-06-01 2022-12-02 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其可伸缩密封部
JP2023027962A (ja) * 2021-08-18 2023-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN115442927B (zh) * 2022-11-04 2023-03-10 上海星原驰半导体有限公司 复合式控温盘

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Publication number Priority date Publication date Assignee Title
US6106628A (en) * 1996-09-27 2000-08-22 Japan Process Engineering Ltd. Heater unit for chemical vapor deposition systems
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
WO2002045135A2 (de) * 2000-12-01 2002-06-06 Steag Hamatech Ag Verfahren zum thermischen behandeln von substraten
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US6688375B1 (en) * 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling

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JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
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Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
US6106628A (en) * 1996-09-27 2000-08-22 Japan Process Engineering Ltd. Heater unit for chemical vapor deposition systems
US6530994B1 (en) * 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6688375B1 (en) * 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
US20020162835A1 (en) * 1998-12-01 2002-11-07 Toshiba Ceramics Co., Ltd Heater
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
WO2002045135A2 (de) * 2000-12-01 2002-06-06 Steag Hamatech Ag Verfahren zum thermischen behandeln von substraten
US6919538B2 (en) * 2000-12-01 2005-07-19 Steag Hamatech Ag Method for thermally treating substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506381A (ja) * 2006-09-25 2010-02-25 東京エレクトロン株式会社 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ
KR100862588B1 (ko) * 2006-12-26 2008-10-10 주식회사 테라세미콘 반응챔버의 히팅장치
WO2020242799A1 (en) * 2019-05-24 2020-12-03 Applied Materials, Inc. Substrate processing chamber

Also Published As

Publication number Publication date
WO2005103333A3 (en) 2006-09-14
TW200540937A (en) 2005-12-16
TWI305656B (en) 2009-01-21
JP2007537582A (ja) 2007-12-20
KR20070008569A (ko) 2007-01-17
CN101023197A (zh) 2007-08-22
US20050217799A1 (en) 2005-10-06

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