TW200540937A - Wafer heater assembly - Google Patents

Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or 'braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

Description

200540937 IX. Description of the invention: [Technical field to which the invention belongs] It is about—substrate supports', especially about—single-crystal κ heaters in substrate supports with low 孰 mass and fast response… [prior art], = : Reduce costs. In order to provide better output == 'A substrate holder can be used to control the temperature of the wafer / substrate: since the single wafer heating system generates metal pollution from 70 pieces; limited thermal independence Area, (limited by the consideration of the increase in thermal stress, thermal stress, and cracking); the thermal mass of the thermal uniformity of ^ ^ caused by the lack of heat on the edge results in a limited thermal response time; due to excessive on-wafer- ' The thermal gradient causes the defects of wafer distortion and sliding. As the size becomes smaller, we need—a better option—wafer heaters to improve column performance. Therefore, we need a heater with more uniform heating characteristics and faster response time. ^ [Summary of the Invention] The present invention relates to a device for controlling the temperature of a wafer / substrate on a substrate support in a processing chamber, and a control method thereof. The present invention provides a substrate support that includes a heating unit with more consistent heating characteristics and faster response time. According to one embodiment of the present invention, is f? A special heater element including a high-purity carbon wire covered with quartz: The heating element is designed to emit electromagnetic radiation similar to a traditional metal wire heating element, and the heater element has a low thermal mass to accelerate heat conduction . The configuration of the improved single-wafer heater and the above-mentioned heater element can be extended by applying the 200540937-type contamination source > Shaw to expand the process temperature. Spin-coated glass substrates can be used for new applications. Low annexes). Low 埶 quality and high-speed high-temperature high-temperature spike annealing (_e layer-by-layer growth mechanism response [Embodiment] method, 恳 strengthen the control of thin film formation. Supply-improved support, 1 contains-of-in the embodiment, The heater element is lifted. ^ 3 The uniqueness of high-purity carbon wire covered by sapphire

^ Display-illustrative block diagram showing the third embodiment according to the present invention. For example: the processing system, Dragon G can include-such as the left side machine's leisure, first. Alternatively, the processing system 100 may include an anti-lithographic coating system, a patterning system, a nano-system, and / or a combination thereof. In other implementations, the processing system may include, for example, a rapid thermal processing (RTP) system, a coating system, a chemical vapor deposition (CVD) system, a physical vapor deposition (pVD, ipvD) system, and an atomic layer Deposition (ALD) systems and / or combinations thereof. The processing system 100 may include elements that control the temperature of the wall of the processing chamber. As shown in the figure, a wall temperature control element 166 is planarly connected to a wall temperature control unit ΐβ〇, and the wall temperature control element Mg can be coupled to the processing chamber 110. The temperature control element may include a heater element and / or a cooling element. For example, the heater element may include a resistive heater or a carbon heater element. The temperature of the processing chamber 110 can be monitored using a temperature sensing device such as a thermocouple (such as a thermocouple, a Pt sensor, etc.). In addition, the controller may feedback the temperature measurement value to the wall temperature control unit 160 so as to control the temperature of the processing chamber no. In addition, the processing system 100 further includes a pressure control system 150 coupled to the processing chamber Π0 to control the temperature in the processing chamber 110. pressure. The pressure control system 150 may include a vacuum pump 152 and a gate valve 154 to control the process chamber pressure and a pressure sensor (not shown). For example, the vacuum pump 152 may include a turbo molecular vacuum pump (TMP) that can pump up to 5000 liters (or more) per second. The TMP can be a SeikoSTP-A803 6 200540937 vacuum pump or an Ebara ET1301W vacuum pump. TMPs are particularly useful for low pressure processing, especially below 50 mTorr. For high pressure (that is, higher than 100 mTorr) or low-throughput processing (that is, no gas flow), mechanical booster pumps as well as dry preliminary pumps can be used. Although the pressure control system 150 is shown coupled to the bottom of the processing chamber 110, this is not required. In another embodiment, the pressure control system 150 may be coupled to the top and / or sides of the processing chamber 110. Moreover, a controller may feed back a pressure measurement value to the pressure control system 150 to control the pressure in the processing chamber. For example, the processing chamber 110 may facilitate the formation of a processing plasma in a processing space 112 adjacent to the substrate 145. Alternatively, the processing chamber 110 may facilitate the formation of a processing gas in the processing-space 1 丨 2 adjacent to the substrate 145. The processing system 100 can be used to process 200 mm substrates, 300 substrates or larger substrates. In another embodiment, the processing system 100 may also include a plurality of processing units, and the processing system may also be operated by generating electricity in one or more processing chambers. The processing system 100 may further include an upper component 120 coupled to the processing chamber 110. For example, the upper assembly 120 may include a gas distribution plate 175 'coupled to a gas distribution system 170 to introduce a processing gas into a processing space η? In the processing chamber no. The gas distribution plate 175 may further include a plurality of holes (not shown) for distributing one or more gases from the gas distribution system 170 to the processing space 112 of the processing chamber 110. The processing gas includes at least one of δ zu 3, HF, H2, 02, CO, Co2, Ar, He, or N2. Here, "at least one of A, B, C, or x" is used to mean any .1 or any combination of more than one of the listed elements. For example, in a polymer or atmosphere process, the process gas may include at least one of DCS, TCS, SiH4, Si2H6, HCD, or NH3; in a CVD oxide process, the process gas may include TE0s or BTBAS at least One of them; in an ALD process, the processing gas may include at least one of H2O, TMA, HTB, NO, or other 0; and in a metal cvd process, the processing gas may include He Yiji and Lian Wei Base or Taimata (trademark) at least one of them. In addition, the structure of the upper component 120 can perform at least one of the following functions: providing a capacitively coupled plasma (ccp) source, providing an inductively coupled plasma, (icp) source, and supporting a plasma pressure transformer (TCP ) Source, providing a microwave power plasma source, providing an electron cyclotron resonance (ECR) plasma source, providing a Helicon wave plasma source, or providing a surface wave plasma source. For example, the 'upper component 120' may include rf components (not shown) and / or electromagnetic system components (not shown). In addition, the upper assembly 120 includes a supply line, an injection device, and / or other gas supply system components (not shown). And, the upper component 120 may include a housing, a cover, a sealing device, and / or other mechanical components (not shown).

In another embodiment, the processing chamber 110 may, for example, further include a processing chamber liner (not shown) or a processing tube to protect the processing chamber 110 from the processing plasma in the processing space 112. In addition, the processing chamber 110 may include a monitoring port (not shown). For example, a monitoring frame may allow optical monitoring of the processing space 112. The substrate 145 may be transferred to the substrate 110 through the opening 194 controlled by the gate valve assembly 190, for example. In addition, the substrate 145 may be transferred to and from the substrate support using a mechanical substrate transfer system (not shown). In addition, the substrate 145 may be received by a lifter (not shown) installed in the substrate support 140 and mechanically transferred by a device installed therein. Once the substrate 145 is received by the substrate transfer system, it can be lowered to an upper surface of one of the substrate supports 140. The substrate 145 can be fixed to the substrate support 14 through an electrostatic clamping system, but passive wafer restrictions are usually sufficient. Moreover, the substrate support may also include a cooling system, which includes a recirculated coolant stream, which receives the thermal energy from the substrate support 140 and conducts the thermal energy to a heat exchange secret (not shown), or # Since the heat exchange system conducts thermal energy. In addition, the gas can be passed through the back gas system to the back of the substrate 145 to improve the p / name control of the substrate 145 and the substrate support 140. In other embodiments, a heating element such as a resistive heating element or a thermoelectric heater / cooler may be included. In another embodiment, the magic counter-support 140 may, for example, further include an upright type '' ΐ retractable bladder wrapped by a retractable bladder (not shown) that is adapted to the beauty and the processing chamber and may seal the upright transfer system. It is isolated from the reduced atmospheric pressure of the process. In addition, a telescoping cover (not shown) may be coupled to the substrate support 140 to protect the telescoping. The substrate support 14 may, for example, provide a focusing ring (not shown), a cover ring (not shown), and a carrier (not shown). In the embodiment shown in FIG. 1, the substrate support 140 may include an electrode 144 through which an RF source may be coupled to the processing gas in the processing space 112. For example, the substrate support 140 may transmit a radio frequency voltage to an electrical bias through radio frequency power transmission from the radio frequency system 185. In some cases, RF bias can be used to heat electrons to form and maintain a plasma. The frequency range of RF bias voltage is usually between 丨 MHz ~ 100 MHz. For example, it is well known to those skilled in the art that semiconductor processing systems using 13.56 Mζ for plasma processing are well known. As shown in FIG. 1, the substrate support 14 may include a heating unit 142 to heat the substrate -145. The f source 180 can provide DC power to the heating unit 144, and the heating unit can provide radiation energy to the substrate 145. In addition, in other embodiments, the substrate support 140 may include a protective barrier (not shown) formed on one or more exposed surfaces of the substrate support 140. In another embodiment, a protective barrier (not shown) may be formed on one or more internal surfaces of the upper component 120. The protective barrier may include a nitrogen compound such as aluminum nitride and / or a polyimide compound. In other embodiments, when used to protect components in the processing system 100, the barriers can be created in several different ways. In one case, the protective barrier can be produced by anodizing a metal and filling the anodized surface with Teflon. For example, a protective barrier can be formed by hard anodized aluminum or hard anodized aluminum alloy, and then filling the hard anodized surface with TFE. In other cases, the protective barrier can be generated using at least one of Ala, Yttria (Y2O3), Sc2O3, Sc2F3, YF3, Laa, Ce02, Eu2O3, or Dy03. In addition, the protective barrier may include at least one of a second column of elements (third column in the periodic table) and a lanthanum element; the second column of elements includes at least one of yttrium, thorium or lanthanum, and the element of lanthanum contains thorium , 镝 or 铕 at least one of them. In addition, a 'protective barrier' may be formed in the processing chamber as part of a pre-treatment coating, such as before the required processing film or si deposition. 9 200540937 The processing system 100 may include a controller 13. The controller 13o may be coupled to the processing chamber 10, the upper assembly 120, the substrate support 14o, the displacement control system 15o, the pump system 16o, and the SIA 180. The controller can be used to provide control data to the system components and receive processing and / or status data from the system components. For example, the controller 13 may include a 3 processing state, a memory (such as electrical or non-electrical memory), and a digital 1/0 port that can generate sufficient control voltage to contact and start to the processing system. 100 = Input and monitoring of output from processing system 100. In addition, the controller 13 can process to L10, upper component 120, substrate support, pressure control system, wall temperature control unit 160, gas supply system 170, substrate support temperature control unit (TCU) 18, and gate valve assembly 190. Exchange information. In addition, the program stored in the memory can be used to control the above-mentioned components of the processing system 100 according to the ψ processing recipe. In addition, the controller 13 can analyze the process and / or status data, compare the process and / or status data with the target process and / or status data and use the comparison result to change the process and / or control system components. Moreover, the controller can also analyze the processing and / or status data, compare the processing and / or status data with historical processing and / or status data, and use the comparison result to predict, prevent, and / or declare a default value. . In addition, the processing chamber 110 may be heated or cooled to a range of 30 to 150 ° C, for example, the general system is 40 C. In addition, the gas distribution system can be heated or cooled to a range of ~ i50 ° C, for example typically 50 ° C. The substrate can be maintained in the range of 250 ~ 1000t: φ, for example, the substrate temperature is usually 500 ° C. Fig. 2A shows a schematic cross-sectional view showing a base plate support in accordance with an embodiment of the present invention. As shown in FIG. 2A, the substrate support 200 is substantially thermally independent of the processing chamber. A centering ring 215 may be coupled to the substrate support. For example, the centering ring 215 may include Teflon. In another embodiment, the substrate support 200 may include a protective barrier (not shown) formed on the upper surface of the substrate support, and the protective barrier may include a compound containing iron gas dragon. As shown in FIG. 2A, the substrate support 200 includes a heating unit 22, which includes a heating unit 210, a thermal barrier 230, a cooling unit 240, and a coupling unit 250. 200540937 Cooling unit 240 may include a recirculated coolant (not shown) that can receive thermal energy from the substrate support and conduct it to a heat exchange system (not shown).

In addition, the 'thermal energy conduction gas' can be transmitted to the back surface of the substrate 145 through a back gas system to improve the heat conduction of the gas gap between the substrate 145 and the substrate support 140. For example, the thermal energy-conducting gas supplied to the back surface of the substrate 145 may include an inert gas such as helium, argon, xenon, krypton, and a processing gas such as dagger, (^ 8, (: and, (^ 6, etc.), or, for example, Oxygen, nitrogen, Qin0, N0, or other gases of hydrogen. This type of system can be used in applications that require substrate temperature control at elevated or reduced temperatures. For example, for back gas, the system can include a two-zone (center- Multi-zone gas distribution system in which the backside gas gap pressure can be independently changed between the center and the edge of the substrate 145, and can vary independently. In other embodiments, such as the heating / cooling element of a resistive heating element or Both thermoelectric heaters / coolers can be included in the substrate holder 24 and the processing chamber wall of the processing chamber 110. For example, the heating assembly 220 can be made of a non-conductive but thermally conductive material, such as quartz, and the heating unit The heater in 21 may be made of a conductive material such as high-purity carbon wire. For example, the thermal barrier 230 may be made of a heat-varying material with variable thermal conductivity, such as stone. , Alumina, Teflon, etc. The cooling unit 240 may, for example, be made of a material that can conduct heat and heat, such as aluminum, stainless steel, nickel, etc. The coupling unit 250 may be, for example, a heat-resistant material with relatively low thermal conductivity. For example, quartz, alumina, Teflon, etc. Alternatively, the coupling unit 25 can also be made of a conductive and thermally conductive material such as aluminum, stainless steel, nickel, etc. In another embodiment, the element 22 (), 23, 24, and 25 each include a protective barrier (not shown) formed on one or more external surfaces of the second. For example, a protective barrier may be formed as described above. For example, the cooling unit Mo may be Contains a coolant in the cooling unit mo (shown in Figure 2) and can accommodate, for example, water, Fluorinert, Galden HT-135, etc., the flow rate of the coolant to provide conductive convection cooling of the substrate support 14. Or, warm 11 200540937 Degree cooling unit 240 can also include an array of thermoelectric elements that can heat or cool the substrate support according to the direction of current flowing through the relevant elements. An illustrative thermoelectric element is

Model ST-127-1. 4-8. 5M (—thermoelectric device with a maximum heat conduction power of 40 W * 40 mm * 3.4 mm with 72 W) is commercially available from Advanced Thermoelectric. In addition, the substrate support 140 may further include an electrostatic chuck (ESC) (not shown), which includes a non-conductive material y having a clamping electrode therein. The design and installation of these cool heads is well known to those familiar with electrostatic clamping systems. In addition, the substrate support 140 may further include a back-surface gas supply system (not shown) for inert gases such as helium, ammonia, krypton, and krypton, and process gases such as WW, •, and the like, or The heat of other gases such as oxygen, nitrogen, or hydrogen = chaos' passes through at least-the gas supply line 342 and at least a plurality of holes or channels, and among them-is supplied to the back surface of the substrate 242. The back-side gas supply pure paste can be a multi-zone supply system such as a = domain (center-edge) system, where the back pressure can be changed radioactively from center to edge. The plate support 140 may further include a thermal barrier 23o to provide an additional thermal insulator between the heating assembly 22o and its components 240. In one embodiment, a thermal shield is located in the substrate support. For example, the thermal shield; 3, the disc, and the reflective surface may be on its upper surface. The Sino-British glass material, carbonized carbon, carbonized carbon dream reflective surface may include an insulating coating film, which contains-impurities and at least fine titanium oxide powder. The reflective surface is very insulated; The thermal shield can improve the thermal efficiency of the heating unit by reflecting the radiation from the heating element. τ < " In the first embodiment, the mixing ratio between Shixi 2 of the reflective thermal insulation coating film is about 3: 3: 7, and the coating film can be more equal to powder. For example, the average particle size of the mixed powder, | 3 Sakizaki, and the fine powder of iridium oxide is about G.1 to micrometer. #When mixing titanium oxide fine powder, mix it with 50 parts by weight of the product with the weight of the parts. The reflective thermal insulation coating is thin = 12 200540937, and the film thickness is about 30 ~ 300 microns. When the thickness of the reflective thermal insulation coating is less than 30 micrometers, its thermal insulation properties and shielding properties will deteriorate, but when the thickness is more than 300 micrometers, fracture may occur. In addition, a high-purity thermal insulation material can be used to fill the space under the thermal shield. When a high-purity thermal insulation material is used, a substrate heating device having excellent thermal insulation characteristics, excellent shielding characteristics, and excellent thermal efficiency can be obtained. In another embodiment, a reflective thermal insulation coating film may be applied to the surface and above the disc. lower surface. For example, a material with a thickness of 30 to 200 microns can be applied and baked at 1000 C to form the reflective thermal insulation coating film. Even if the film is left at a temperature higher than 1200 ° C for a long time, it is still difficult to delaminate, peel, or decolorize the film. In addition, when the thickness of the film is about 100 micrometers, the holmium radiation with a wavelength of 2.5 micrometers can reflect more than 45%. … In another embodiment, the thermal barrier 230 may include a thermal insulation gap (not shown), and the side thermal insulation gap may use a pump system (not shown) or a coupling to a pressure control system and / or a gas supply The vacuum line (not shown) of the device (not shown) is evacuated to change its thermal conductivity. The gas supplier can be regarded as a back-side gas supplier for coupling a thermal energy-conducting gas to the back of the substrate 145. In an alternative embodiment, a thermal barrier may not be needed. In a consistent embodiment, the upper surface of the substrate support is flat, and the substrate is lowered to or from the upper surface of the substrate support by using a set of lifting tips. For example, the substrate may be raised or lowered through the quartz tip, and the substrate support may include a hole in the quartz carbon wire heater assembly that allows the quartz tip to pass through the carbon wire heater assembly. When the substrate is in close contact with the surface of the substrate support, the conductivity of radiant energy conduction increases. The use of quartz on the upper surface portion of the substrate holder can reduce back surface contamination problems. For example, metal contamination can be substantially eliminated. Fig. 2B shows a simplified block cross-sectional view showing a substrate support according to another embodiment of the present invention. In the illustrated embodiment, a heater unit 22 and a substrate 145 are shown. The heater assembly 220A may include a heating unit 210A, which may include at least one carbon wire heater and a supporting device 212A. ’, 13

200540937 As shown, the upper surface of the heater assembly may include a rising portion 225 where the substrate is located. The height of the lifting portion 225 is sufficient for a wafer transfer mechanism (fork) to be transferred between the substrate and the upper surface of the substrate support, and the substrate can be lifted off the substrate support or lowered onto the substrate support. The support device 212A ′, the heating unit 210A, and the rising portion 225 may each include quartz. The heating unit 210A may be made into one of the configurations described herein. In the illustrated embodiment, the heating unit 210A is shown as being mounted on the support device 212A, but this is not necessary. Alternatively, the heating unit can be installed in different ways. In another embodiment, the temperature sensor may be installed inside the rising portion 225 and / or inside the supporting device 212A. Temperature sensors can be used to measure heater assembly temperature and / or substrate temperature. In addition, data from temperature sensors can be used to determine characteristics of other wafers, such as curvature. Moreover, having a quartz substrate support can improve the maintenance of the processing system. Treated products = and by-products that are less etched or adhered to the quartz surface of the substrate support. Furthermore, when the substrate support contains quartz, further and / or frequent cleaning of the processing chamber can be performed. Since the substrate holder has a wide operating temperature range, it can be cleaned even without opening the processing chamber. For example, the temperature of the substrate support can be raised to a relatively high temperature during a cleaning process. This cleaning order can be divided into separate branches or can be used as a part of the cleaning process of the processing room. The substrate holder with a carbon wire heater can have a very wide '2 = 1 temperature response from excellent conduction characteristics; therefore, it can be used (CVD—) single addition (substrate holder) is available _ such as chemical vapor deposition 、, 穑 / pvnf H Chemical vapor deposition (PECVD) system, physical base gas; 穑 γ (α3 糸 system, ionized physical vapor deposition (iPVD) system, and atomic layer deposition (ALD) deposition system. $ 卞In addition, -Single wafer heater assembly (substrate support) can be used for heat treatment systems such as rapid thermal 14 200540937 = (RTP) system, rapid thermal annealing⑽) system, drying system, developing system, first and peak annealing system . 15 wafer heating (substrate support) can also be used in side systems and chemical oxide (COR) removal systems. For its part, the single-crystal κ heating test piece must work together with Xu Xiang's various wafers. The wafer at the beginning of the program development cycle is very different in structure from the wafer after the fi-beam. Wafers in front ϋ ϋΓΓ1 and the same—The thermal response of wafers in the later stages is also different. The single wafer heating module can effectively operate both the front-end and back-end processes. The single-wafer heater module can independently control selected areas of the wafer. For example, the 'central area may have different controls than the outer area. This compensates for the difference in thoron radiation of the crystal ==. Multi-zone single-wafer heater modules can be used in many different processing recipes, different processing pressures, and fUs: different processing gas flows, different wafer types, and multiple processing times. Heater to maintain consistent wafer temperature. Wafers with non-film envelopes can have forests_ The thermal characteristics of wafers can vary depending on the amount of incorporation. Special, special 14 program design to compensate the wafer The heat can be escaped from the υ% θθ® heating element. In another embodiment, the uniformity of the wafer can be improved by the heating of the n-component. The difference of the silk village f can be achieved evenly. -Best = is used when this control depends on processing = Since the single wafer heater assembly can be at high temperature from ionization, w, it can be used to produce oxidizing sound in a short time plus leakage current, lower stress and more Highly reliable ^ _ degree emulsifiers may have lower 15 200540937 Because single crystal® heating n modules can be thin at high temperature. Nitrogen layer == high temperature: at === make high = to increase in short _ plus: Nain More than = so =

The steps can provide lower sheet resistance and lower bonding depth—the carbon heating element in the quartz substrate support can provide a good method for controlling the processing of impurities, and provide an improved bonding method, heater Components can be used in the process. Silicide is used in deep sub-micron CMOS technology to reduce the sheet resistance of the source, drain, and gate regions, as well as contact and source-drain series resistors. With the shrinking of the CM0s process, many problems have arisen in the Shixihua module. The annealing temperature and the kinetic energy of the process depend on the metal used, and the present invention is applicable to several different metals such as NiSi, TiSh, and CoSh. Single wafer heater assemblies control contamination before, during, and after the annealing process. ^ Incorporating one or more carbon heaters into a substrate support provides lower thermal energy pre- ^, faster output, and lower cost of ownership. Single wafer heater assemblies provide the best processing performance required for high aspect ratio processing and can be used for ultra shallow junction formation, self-aligned salicidation, oxide growth, BPSG thickening, and metal annealing. The substrate support 200 may further include a lifting tip assembly (not shown) which can raise or lower three or more lifts so as to vertically transfer the substrate 145 to and from one of the upper surfaces of the substrate support and a transfer plate of a processing system. 16 200540937 The temperature of the temperature-controlled substrate holder 200 can be monitored using a temperature sensing device such as a thermocouple (such as a K-type thermocouple, a Pt sensor, etc.). Moreover, the suppressor can feed back the temperature measurement value to the substrate support to control the temperature of the substrate support. Second, for example, at least one of fluid flow rate, fluid temperature, type of thermally conductive gas, thermal energy transfer, body pressure, clamping force, heater element current and / or voltage, thermoelectric device current or polarity, etc. can be adjusted to Affects the temperature of the substrate support.

An optical monitoring system (not shown) monitors light radiation in the processing space. For example, photodiodes, photomultiplier tubes, CCDs, CIDs, or other solid-state detectors can be used. However, other optical devices that can analyze optical radiation can also be used. The monitoring system provides information to the controller to adjust the condition of the processing chamber, such as wafer temperature, before, during, and after processing. In another embodiment, the optical monitoring system may also include a laser light source. In addition, an optical monitoring system can be used to monitor the efficiency of the heating unit. For example, the optical monitoring system can be operated in a frequency band containing the wavelength of the carbon fiber heater element. In addition, the optical monitoring system can be used to monitor the clean processing of the substrate support. For example, when cleaned, the light radiation is high and stable, and it can be sensed as a clean substrate support. The present invention has a faster thermal gradient than conventional heater systems and can tolerate higher temperature operating ranges. This advantage is even more pronounced at temperatures above 250 ° C, and the heating element can also operate at temperatures up to 950 ~ 1000 ° C. 3A to 3C are explanatory diagrams showing a j heater unit according to an embodiment of the present invention. In the illustrated embodiment, a circular heater unit 300A has a circular central region 31o and several circular annular regions (32o, 330, 34o, 35o, and 360). Six areas are shown in FIG. 3A, but are not necessary for the present invention. The areas with different numbers are added, and each area may have a different shape. For example, circular rings can also have different thicknesses. In the illustrated embodiment, the heater unit includes a heating element (315, 325, 335, 345, 355, and 365), and each plus element can be controlled independently. In FIG. 3B, a circular heater unit 300B is shown, which has a center region of 17 200540937 and a number of circular ring 90-degree regions (a, B, C, and D regions). The embodiment shown The regions are shown with the same thickness, but are not necessary in the present invention. The heater unit may include a different number of regions, and each region may have a different shape. In the illustrated embodiment, each region includes an independently controllable region. Heating element In Figure 3C, a circular heater unit 300c is shown, which has a circular central area and several 45-degree areas of circular rings (Al, A2, Bl, B2, Cl, C2, and D2 area). The illustrated embodiment shows areas with the same thickness, but is not necessary in the present invention. The heater unit may contain a different number of areas, and each area may have a different shape. In the illustrated embodiment, each- Areas contain—additional components that can be controlled independently.

Alternatively, each of the regions of the freshening element shown in Figs. 3A to 3C may not need the additional element. In other implementations, the isolation element (not shown) can sometimes isolate the area & 0 In the-embodiments,-or multiple temperature sensors (not shown) can be located in the heating unit shown in _ ~ 3C- In an area. Alternatively, also optical technology to measure.抑. FIG. 4 shows a schematic diagram showing another heating = 70 in one embodiment of the present invention. In the embodiment shown, a square heater unit shed is shown, which has several square areas 41G. Figure 4 shows 25 regions, but is not necessary for the present invention. The heating element 400 may include different numbers of regions, and the regions may have the same value. For example, rectangles can also be used. In the embodiment shown, the heating elements 420 'and each heating element can be independently tii-in 1'-or multiple temperature sensors (not shown) can be located in Figure 4 Area towels. Alternatively, the temperature can also be measured using optical techniques. In addition, each area of the heating || unit of FIG. 4 is not separated from other implementations, and the β-off element (the magic area shows each area _ is displayed-a simplified diagram showing that according to the present invention-in the embodiment-plus) 7L. In the present embodiment, the heater unit 5 ′ includes a heating element 51G, conversion 200540937 elements 512A and 512B, a sealed end portion 519, and connection ends 517A and 517B. The heating element 510 may include an annular tube 511, which is sealed. A carbon wire heater 515 containing a carbon fiber bundle. The end of the ring tube 511 is coupled to the conversion elements 512A and 512B. In one embodiment, the carbon wire heater 515 is installed in the ring tube 511, and the conversion element 512A And 512B does not include a heater. For example, this allows the radiation energy from the heater to be controlled more effectively. In another embodiment, a part of the one or more conversion elements 512A and 512B may include a part of In one embodiment, the annular tube 511 and the conversion elements 512A and 512B may be made of a single piece of material such as quartz glass. In another embodiment, the annular tube ′ and the conversion elements 512A and 512B may be advantageous. Made of different pieces of material and welded together during the manufacturing process®. Alternatively, the conversion elements 512A and 512B may not be required and the annular tube 511 is sealed, and the connection end may be located at the end of the annular tube during the manufacturing process. In addition, The sealing end portion 519 may face to the end portions of the conversion elements 512A and 512B. The sealing end portion 519 may include the end portions of the sealing conversion elements 512A and 512B. For example, a manifold cover can be used as a sealing tool. In addition, it can also be used Compression seal. In addition, a graded seal can be used to include different glass materials. Carbon wire heater 515 can be inserted into the ring tube 511 and can extend between the end elements 513A and 513B. And, the end element 513A And 513B may include a compressed wire carbon member 516, as shown in FIGS. 6A and 6B. A carbon wire heater 515 may be embedded in the compressed wire carbon member 516, which is also in a compressed state, as shown in FIGS. 6A and 6B. The structure of the carbon member 516a and the carbon wire heater 515 can extend substantially parallel to the axes of the end elements 513A and 513B. In FIG. 5, a ring shape is shown, but the invention is not It is not necessary. Alternatively, for example, a substantially oval shape, a substantially square shape, and a substantially rectangular shape may be used. In one embodiment, the annular tube may include a quartz glass material. In other embodiments, it may be Different materials are used. For example, the carbon wire heater 515 may include carbon wires made by combining 300 to 350 carbon fibers, each of which is bundled with a diameter of 5 to 15 micrometers. A plurality of 9 carbon fibers are woven into ropes or braids to a diameter of about 19 200540937 to 2 mm to form a carbon wire. -The carbon wire heater 515 and the wire carbon member 516 may contain 300 ~ 80 carbon fibers, which are aggregated into 7 micrometers-fiber bundles, and 9 such fibers = woven into a straight reed 2 _ rope or ribbon, This rope or webbing has a resistance of 10 ohms / meter at room temperature, or about 1000 at a temperature. In the case of 〇, it has a resistance of 5 ohms / meter. In addition, five such carbon wires have a resistance of 2 ohms / meter at room temperature / at the time of bonding, but have a resistance of spitting at a temperature of about 010 (rc.) The thermal energy produced by 516 is much less than the thermal energy produced by carbon wire heater 515.

Among the carbon wires, the weaving span of the carbon wires is about 2 to 5 sides, and the surface of the carbon wires is fluffed (518 in FIG. 7). The height is about 0.5 ~ 2.5. For example, as shown in FIG. 7, the surface fluff may be a part of the broken carbon fiber protruding from the outer surface of the carbon wire. The carbon wire heater can be made so that the fluff is connected to the inner wall of the annular tube, but the carbon wire heater itself will not be connected. The ring = the inner wall of the tube f. In this way, the reaction of the quartz glass (Si02) and the inverse content (C) of the carbon wire heater can be minimized at high temperature, so that the reduction of the quartz glass and the reduction of the durability of the carbon wire can be avoided Happening. To achieve this configuration, the internal diameter of the annular tube must be determined based on the diameter and number of carbon fibers in the carbon wire heater. In addition, the amount of impurities (ash content) in carbon fiber and carbon wire heaters is less than 10 ppm. Alternatively, the ash content may be less than 3 ppm. The wire carbon member 516 can be inserted into the carbon wire heater 5 and 5 and the internal connection wires 5 j 4A and

Between 514B to reduce the thermal energy conducted by the carbon wire heater 515 to the internal connecting wires 514A and 514B, so as to avoid the quality degradation caused by the high temperature of the sealed end 519. As in the case of the carbon wire heater 515, the reaction between the quartz glass (SiO2) and the carbon (C) of the wire carbon member 516 can be minimized at high temperature, so that the reduction of the quartz glass and the durability of the carbon wire can be avoided The reduction situation.

The internal connection lines 514A and 514B may be located in a glass tube forming a part of the conversion element (512A and 512B). The internal connecting wires 514A and 514B can be coupled to the end elements 513A and 513B, respectively, as shown in FIGS. 6A and 6B. For example, the internal connection lines 514A and 514B can be compressed into the end elements 513A and 513B. In addition, internal connection wires 514A and 514B 200540937 can be coupled to the sealed end 519 °.卩 Connecting wires 517A and 517B can be used to transfer the heating element to a power source (not shown). The sealed end may include a method of coupling an internal connection to an external connection. For example, indium (M.) (not shown) can be used to close the internal connection lines 51 to 51 to the external connection lines 517A and 517B. In addition, the sealed end 519 may include one or more plug members (not shown) to close the end of the quartz glass tube. In another embodiment, an extra glass tube having a larger diameter than the annular tube 511 may be provided so that the annular tube 511 can be inserted into the large-diameter quartz glass tube, and these tubes can be integrated using a welding or welding tool. An internal connection line 514A and 514B and external connection lines 517A and 517B may include indium (Mo) or tungsten (W) rods with a diameter of 1 to 3 mm. The diameter of the internal connection lines 5 times and 5 weights and the diameter of the external connection lines 517A and 517B can be selected as needed, but too small diameters can lead to undesirably high resistance. On the other hand, too large a diameter is not needed because the size of the end point will change greatly. "In order to ensure that the internal connecting wires 514A and 514B can be easily connected to the broken wires, that is, the wire carbon member 516 compressed in the annular pipe 511, can be aligned with the ends of the internal connecting wires 514A and 514B. The sealed end 519 can further include powder Ming (Al203) or powdered Si02 adhesive. In one embodiment, the procedure for manufacturing the ring-shaped heating unit may include: generating a ring-shaped tube 511 containing • conversion elements 512A and 512B; assembled in the ring-shaped tube 511 Carbon wire heating member 510; assembling end elements in conversion elements 512A and 512B; coupling the end elements to opposite ends of carbon wire heating member 510; assembling sealed ends connecting internal connecting wires 514A and 514B and external connecting wires 517A and 517B 519; and reducing the internal pressure of the heater to less than 1 Torr before sealing. Figure 6A shows a longitudinal cross-sectional view showing the use of a connecting wire and carbon wire heating in accordance with an embodiment of the present invention Fig. 6B shows a side cross-sectional view showing an end element according to an embodiment of the present invention. In the embodiment shown, an end element 513A and 513B are shown. The element is used to couple the carbon wire heater 515 and a connecting wire 514A and 514B in a compressed state 21 200540937 to a plurality of wire carbon materials 516. The terminal element is electrically connected to the carbon wire heater through the plurality of wire carbon materials and the connection In this way, excellent electrical connection is provided over a wide temperature range. In addition, a plurality of carbon materials can help reduce the oxidation effect of the wire. FIG. 7 shows a plan view showing carbon in one embodiment according to the present invention Wire heating ^. In the illustrated embodiment, the carbon wire heaters 515 and 516 are formed by aggregating a plurality of stone anti-fiber bundles, in which the ultra-fine carbon fibers are bundled by weaving square ropes similar to ropes or braids. Together. Compared with its traditional heating element made of metal or Sic, the carbon wire heater of the present invention has a small thermal energy capacity, excellent temperature characteristics, and excellent durability at high temperatures. In addition, since the heater Slender carbon single fiber bundles ^ are assembled and assembled. Compared with heating elements made of solid carbon material, the carbon wire heater of the present invention has excellent flexibility and adaptability to shape changes. For example, a carbon wire heater can be formed by aggregating 10 fiber bundles, each of which contains about 3000 ~ 3500 carbon fibers with a diameter of 7 microns. The carbon fibers can be rope or braided The wire harness can have a span of about 2 to 5 mm. In addition, the rope-shaped or braided carbon wire heater has carbon fiber fluff (upright) on its surface. The down (right) can be Part of the broken carbon wire protruding from the outer surface of the carbon wire. Due to the carbon fiber, the fluff on the surface (upright) is about 0.5 mm to 2.5 mm. When the carbon wire heater is inserted, only The fluff (upright) 518 is in contact with the inner wall of the quartz glass tube φ or groove, and the heater itself is not in contact with the inner wall. In this way, the reaction at high temperature between Shi Yang glass (SiO2) and carbon (c) in a carbon wire heater can be reduced and / or eliminated. In addition, reductions in quartz glass and reductions in carbon wire durability can be reduced and / or eliminated. Carbon fiber is indeed of high purity in terms of heatability, durability, stability and uniformity of pollution. In addition, the impurities (ash content) in carbon fiber and carbon wire heaters are less than 10 ppm. In another embodiment, the ash content in the carbon fibers does not exceed 3 ppm. The carbon wire member 516 may include a material that is substantially the same as or at least similar to the material in the carbon wire heater 515. For example, this material can be in the shape of a braided rope or braid, with approximately the same carbon fiber diameter, and the same number of fibers are bundled into a bundle; 22 200540937 The same number of fiber bundles, the same weaving method, the same weaving span, the same Fluff, same material and same ash content (less than 10 ppm). Thereafter, the number of wire carbon members located in the end elements 513A and 513B may be equal to or more than that in the carbon wire heater 515. In one embodiment, there may be five or more wire carbon members 516 in each carbon wire heater 515. Fig. 8 shows a schematic diagram showing a multi-zone heating unit according to an embodiment of the present invention. In the illustrated embodiment, the heater unit 800 includes four heating elements (81, 820, 830, and 840), conversion elements (812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B), and is hermetically sealed. Ends (819, 829, 839, and 849), and-and connection ends (817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B). _ The heating elements (810, 820, 830, and 840) can include curved tubes (8Π, 821, 831, and 841). Carbon wire heaters (815, 825, 835, and 845) containing a carbon fiber bundle are sealed in the curved tubes. in. The ends of the curved tubes (811, 821, 831, and 841) can be said to fit into the conversion elements (812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B). In one embodiment, the carbon wire heaters (815, 825, 835, and 845) may be disposed in the curved tubes (81, 82, 831, and 841), and the conversion elements (812A, 812B, 822A, 822B, 832A, 832B) , 842A, and 842B) do not include heaters. For example, this makes the radiation from the heater more effectively controlled. In another embodiment, a part of the one or more conversion elements (812a, 812B, 822A, 822B, 832A, 832B, 842A, and 842B) may include a part of the heater. In one embodiment, the curved tubes (811, 821, 831, and 841) and the conversion elements (812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B) may be formed using a single piece of material such as quartz glass. In another embodiment, the curved tube (811, 821, 831, and 841) and the conversion element (8i2A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B) can be made of different sheet materials and are being manufactured Welded together during the process. Alternatively, the conversion element may not be needed, and the bent tubes (811, 821, 831, and 841) may be sealed, and the connecting end may be located at the end of the bent tube during the manufacturing process. 23 200540937 In addition, sealed ends (819, 829, 839, and 849) can be coupled to the end of conversion elements (812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B). The sealed ends (819, 829, 839, and 849) may include a method of sealing the ends of the conversion elements (812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B). For example, a manifold can be used as a sealing tool. Alternatively, a compression seal may be used. Alternatively, a graded seal may be used and may include different glass materials.

Carbon wire heaters (815, 825, 835, and 845) can be inserted into curved tubes (811, 821, 831, and 841) while at the end elements (813A, 813B, 823A, 823B, 833A, 833B, 843A, and 843B) Between extensions. And, the end elements (813A, _813B, 823A, 823B, 833A, 833B, 843A, and 843B) may include a compression-shaped carbon member 516 as shown in FIGS. 6A and 6B. The carbon wire heater 515 may be embedded in the compressed wire carbon member 516 which is itself in a compressed state as shown in FIGS. 6A and 6B. The configuration of the wire carbon member 516 and the carbon wire heater 515 can extend substantially parallel to the axis of the end element. In Fig. 8, the four curved regions form a substantially annular shape, but are not necessary in the present invention. Alternatively, for example, a substantially elliptical shape, a substantially square shape, and a substantially rectangular shape may be used. In one embodiment, the curved tube may include a quartz glass material. In other embodiments, different materials may be used. For example, carbon wire heaters (815, 825, 835, and 845) can include carbon wires made of 300 to 350 carbon fibers, each of which has a diameter of 5 to 15 microns. bundle. After that, about 9 carbon fiber bundles are woven into ropes or braids to a diameter of about 2 and become a carbon wire. The stone anti-wire heating and wire carbon components can contain 300 ~ 35 carbon fibers, each carbon fiber has a diameter of about 7 microns and is assembled into a fiber bundle, and 9 such fiber bundles are woven into a diameter 2 mm rope or webbing, this rope or webbing has a resistance of 10, s / meter at room temperature, or about the surface temperature. The case of c has 5-gold you = resistance. In addition, five such carbon wires have 2 pools of fertilizer / room at room temperature when combined, but at temperature_〇〇. (: In the case of i has a thin resistance. Therefore, the thermal energy generated by this kind of wire carbon member 516 is much less than the thermal energy produced by the carbon wire heater 515 24 200540937. The weaving span of the thread is about 2 ~ 5 sides, and the surface of the charcoal wire (5 = in Fig. 7) is about 0.5 ~ 2 · 5 sides high. For example, as shown in Fig. 7, the surface pile ^ can be A part of the broken carbon fiber protruding from the outer surface of the carbon wire. The heated state of the carbon wire can be such that the fluff is connected to the inner wall of the curved tube, and the carbon wire heater itself is not connected to the inner wall of the 4th curve. In this way, the reaction of the quartz glass (si〇2) and the carbon content (C) of the carbon wire heating ^ can be minimized at high temperature, so that the reduction of the glass and the durability of the carbon wire can be reduced. In order to achieve this configuration, the internal diameter of the bent tube must be determined based on the diameter and quantity of carbon, dimensions and dimensions of the carbon wire heater. In addition, the impurity content (ash content) of the carbon fiber and carbon wire heater is low 10 ppm. Alternatively, the ash content can be less than 3 ppm. Interconnect cables (814A, 814B, 824 A, 824B, 834A, 834B, 844A, and 844B) can be located in the glass tube forming a part of the conversion element (8i2A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B). As shown in Figures 6A and 6B, the inside Cables (814A, 814B, 824A, 824B, 834A, 834B, 844A, and 844B) can be coupled to end components (813A, 813B, 823A, 823B, 833A, 833B, 843A, and 843B). For example, internal connection cables (814a , 814B, 824A, 824B, 834A, 834B, 844A, and 844B) can be compressed into the end elements (813A, 813B, 823A, 823B, 833A, 833B, 843A, and 843B). Φ As shown in the figure, the internal connection lines (814A, 814B , 824A, 824B, 834A, 834B, 844A, and 844B) can be coupled to the sealed ends (819, 829, 839, and 849). In addition, external connections (817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B) It can also be coupled to the sealed end (819, 829, 839, and 849). The sealed end can include a method of coupling the internal connection wires to the external connection wires. For example, a mesh (M〇) foil (not shown) can be used to Internal connection cables (814A, 814B, 824A, 824B, 834A, 834B, 8 44A and 844B) are coupled to external connection lines (817A, 817B, 827A '827B, 837A, 837B, 847A, and 847B). In addition, the sealed ends (819, 829, 839, and 849) may include one or more plug members (not shown) to close the ends of the bent tube. For example, the sealed end may further include a cement with powdered aluminum (Al203) or powdered Si02 25 200540937.

External cables (817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B) can be used to couple heating elements (810, 820, 830, and 840) to one or more power sources (not shown). The heating elements (81, 820, 830, and 840) can be independently controlled. In another embodiment, an extra glass tube having a larger diameter than the tube shown in FIG. 8 is provided. Such a smaller tube can be inserted into the large diameter tube, and these tubes can be integrated using a valley joint or welding tool . Internal connecting wires (814A, 814B, 824A, 824B, 834A, 834B, 844A-and 844B) and external connecting wires (817A, 817B, 827A, 827B, 837A,, 837B, 847A, and 847B) can contain 1 to 3mm diameter Molybdenum (Mo) or tungsten (w) rods. The diameters of the internal connection wires and external connection wires can be selected as required, but too small diameters can lead to undesired higher resistance. On the other hand, too large a diameter is not needed because the size of the endpoints can change significantly. In an embodiment, the procedure for manufacturing the bending heater region may include: generating a bending tube containing a conversion element; assembling a line carbon heating member in the bending tube; assembling a terminal element in the conversion element; coupling the terminal element to carbon wire heating The opposite ends of the component are connected to the sealed end area of the internal connection line and the external connection line; and the internal pressure of the bending heater area is lowered below i T0rr before sealing. Fig. 9 shows a schematic diagram showing a heating assembly according to an embodiment of the present invention. In the illustrated embodiment, the heating assembly 900 includes three heating units (910, ',' 920, and 930), and a support device 95. The figure shows three heating units but is not necessary for the invention. In other embodiments, different numbers of heaters, different configurations, and heating units with different shapes may be used. #w,-heating units (⑽, 92G, and 930) can all include-ring quartz glass / carbon wire heaters containing a carbon fiber bundle are sealed in the tube, as previously described. The end of the annular quartz tube can be combined with a conversion element. In the embodiment, the carbon and heater are located in a curved quartz glass tube, and the conversion element does not include a heated state. For example, this makes the radiation from the heater more effectively controlled. In another embodiment, a part of the one or more conversion elements may include a part of the heater. In FIG. 9, the heating units (910, 920, and 930) can be installed in the recesses or grooves in the supporting device 950. In another embodiment, the heating units (91, 92, and 930) may include multi-region elements, as shown in FIG. 10A to 10C are schematic diagrams showing another heating element according to an embodiment of the present invention. In the illustrated embodiment, the heating assembly 1000 includes three heating elements (1010, 1020, and 1030), a support device 1050, and a cover 1070. Three heating elements are shown in the figure, but are not necessary for the present invention. In other embodiments, different numbers of heating elements or different configurations can be used, and the heating elements can also have different shapes. _ The cover 1070 may include a first flat quartz glass plate, and the supporting device 1050 may include a second flat quartz glass plate having a ring-shaped recess or groove (1011, 1021, and 1031), and a carbon wire heater may It may be located in an annular recess or groove. In one embodiment, the cover 1070 and the supporting device 1050 can be welded to each other so that the carbon wire heaters (1012, 1022, and 1032) can be sealed in the integrated member, as shown in FIG. 10c. In addition, the heating assembly 1000 further includes conversion elements (1012A, 1012B, 1022A, 1022B, and 1032A), sealed ends (1019, 1029, and 1039), and connection ends (1017A, 1017B, 1027A, 1027B, 1037A, and 1037B). The heating element (1010, 1020, and 1030) may include a curved recess or groove (1011, 1021, and 1031) in the support device 1050, and a carbon wire heater (1015) containing a carbon fiber bundle , 1025, 1035, and 1045). The ends of the curved trenches (1011, 1021, 1031, and 1041) can be coupled to conversion elements (1012A, 1012B, 1022A, 1022B, 1032A, 1032B, 1042AW & 1042B). In one embodiment, the carbon wire heaters (1015, 1025, 1035, and 1045) are installed in the test grooves (1011, 1021, 1031, and 1041), and the conversion elements (1012A, 1012B, 1022A, 1022B, 1032A, 1032B, 1042A, and 1042B) do not include heaters. This allows, for example, more effective control of the radiation from the heater. In another embodiment, a portion of the one or more conversion elements (1012A, 1012B, 1022A, 1022B, 1032A, 1032B, 1042A, and 1042B) may include a portion of the 27 200540937 heater. Among carbon wires, the weaving span of carbon wires is about 2 ~ 5mm, while the surface fluff of carbon wires (518 in Figure 7) is about 0.5 · 2.5 ~ 2.5 mm high. For example, as shown in FIG. 7, the surface pile may be a part of the broken carbon fiber protruding from the outer surface of the carbon wire. The carbon wire heater can be made so that the fluff is connected to the inner wall of the curved tube, while the carbon wire heater itself is bent, and the inner wall of the tube t is connected. In this way, the reaction of quartz glass (SiO2) and carbon wire plus ^, the stone reaction 3C (C) can be minimized at South temperature, so that the reduction of quartz glass and the durability of carbon wire can be reduced. Degree of reduction. _ In order to achieve this configuration, the internal diameter of the curved recesses or grooves must be based on the diameter and number of carbon fibers in the carbon wire heater. In addition, the amount of carbon fiber (ash content) in carbon fiber heaters is less than 10 ppm. Or less than 3 ppm. In addition, the sealed ends (1019, 1029, and 1039) can be coupled to the ends of the conversion elements (1012A, 1012B, 1022A, 1022B, 1032A, and 1032B). The bifurcated ends (1019, 1029, and 1039) may include a method of sealing the ends of the conversion elements (101, 28, 1012B, 1022A, 1022B, 1032A, and 1032B). For example, a manifold can be used as a sealing tool. Alternatively, a compression seal can be used. In addition, a graded sealing portion may be used and may include different glass materials. Wire-blocking heaters (1015, 1025, and 1035) can be inserted into curved recesses or φ grooves (, 1021, and 1031) and extend between end elements (, 1013B, 1023A, 1023B, 1033A, and 1033B). And the 'end elements (i0i3A, • 1013B, 1023A, 1023B, 1033A, and 1033B) may include a compressed linear carbon member 516 as shown in FIGS. The carbon wire heater can be embedded in a compressed wire carbon member which is also in a compressed state as shown in βA and 6B. The configuration of the wire carbon member and the carbon wire heater can extend substantially parallel to the axis of the end element. In the illustrated embodiment, a circular shape is shown, but it is not necessary for the present invention. Alternatively, for example, a substantially elliptical shape, a substantially square shape, and a substantially rectangular shape may be used. In one embodiment, the material of the tube may include a quartz glass material. In other embodiments, different materials may be used. 28 200540937 For example, carbon wire heaters (1015, 1025, and 1035) can contain carbon wires made from 300 to 35 million, and each dimension is After the bundle 1 having a diameter of 5 to 15 micrometers, a plurality of about nine carbon fibers are woven into a rope or a braid into a diameter of about 2 mm and become a hindrance. The carbon wire heaters (1015, 1025, and 1035) may be arranged in a circle in the support device 1050. However, the wiring arrangement can be freely changed without restriction. The supporting device 1050 can be made into a state with substantially hollow recesses or grooves (following 丨, gift, and 1031), and there is space in its surroundings for its conversion elements. 0 It is made by welding the joint surfaces of the cover 1007 and the support device 1050. After the carbon wire heater is arranged in the recess or groove, the interior of the recess or groove enters a non-oxidizing atmosphere. status. The carbon wire heater can be bundled into a fiber bundle containing about 350 fibers, each fiber having a diameter of 5 to 15 micrometers, and 9 fibers of this type are bundled into a 2-leg diameter webbing or rope. Reed fibers with a diameter of less than 5 microns may not have enough strength to withstand the knitting process of heating to produce the desired elongated shape. And, unless too many fiber threads are used, such fibers may be too thin to obtain the required resistance, so using such fibers is not practical. This carbon fiber with a diameter greater than 15 microns may lack elasticity, and it is not only difficult to weave when adding a plurality of stone antifiber bundles, but also the fibers in some bundles have poor strength. Yamato, the surface fluff of carbon fiber may be about 0.5 to 2.5 legs high. The fluff is the part of the damaged thread that protrudes outward from the outer surface. Carbon wire heaters & to the support means' by means of fluff thus produce a compatible heating unit with excellent subsurface heating uniformity and suitable for semiconductor finished products. -F In another embodiment, a carbon wire heater may include 100 to 800 carbon fibers, and the diameter of the mother-slave fiber is 5 to 15 microns and is woven into a bundle. Three or more such bundles can be woven into a longitudinal structure such as a thread or a belt. Carbon wire heaters can have a resistance of 1 to 20 hms / meter at operating temperature. Mouth end elements (1013A, 1013B, 1023A, 1023B, 1033A, and 1033B) can be located as small as one part of the conversion element (1012A, 1012B, 1022A, 1022b, 29 200540937 1032A, and 1032B) Within the diameter of quartz glass tube i55. The end elements (1013A, 1013B, 1023A, 1023B, 1033A, and 1033B) may include compressed linear carbon members as shown in FIGS. 6A and 6B. The carbon wire heater can be inserted into a recess or groove in the support device to extend between the end elements. Also, the carbon wire heater may be embedded in a compressed wire carbon member which is itself in a compressed state as shown in Figs. 6A and 6B. Internal cables (1014A, 1014B, 1024A, 1024B, 1034A, and 1034B)

It can be located in a small diameter quartz glass tube forming a part of the conversion element (1012A, 1012B, 1022A, 1022B, 1032A, and 1032B). Internal connecting wires (i0i4A, 1014B, 1024A, 1024B, 1034A, and 1034B) can be coupled to the end components (1013A, 1013B, 1023A, 1023B, 1033A, and 1033B), respectively, as shown in Figures 6A and 6B ®. For example, the internal connections (1014A, 1014B, 1024A, 1024B, 1034A, and 1034B) can be compressed within the end elements (ι〇13A, 1 () 13β, 1023A, 102, 1033A, and 1033B). As shown in the figure ', the internal connecting wires (1014A, 1014B, 1024A, 1024B, 1034A, and 1034B) can be coupled to the sealed ends (1019, 1029, and 1039). In addition, external connecting wires (1017A, 1017B, 1027A, 1027B, 1037A, and 1037B) can also be coupled to the sealed ends (1019, 1029, and 1039). The sealed end may include a method of lightly closing the internal connecting wire to the external connecting wire. For example, molybdenum (Mo) foil (not shown) can be used to connect internal connections (1014A, 1014B, 1024A, 1024B, 1034A, and

• 1034β) are coupled to external connection lines (1017A, 1017B, 1027A, 1027B, 1037A • and 1037B). In addition, the sealed ends (1019, 1029, and 1039) may include one or more plug members (not shown) to close the ends of the tube. For example, the sealed end may further include a cement with powdered aluminum (AhO3) or powdered SiO2. External connections (1017A, 1017B, 1027A, 1027B, 1037A, and 1037B) can be used to couple the heating elements (1010, 1020, and 1030) to one or more power sources (not shown). The heating elements (1010, 1020 and 1030) can be controlled independently.

The figure shows that the end elements (1013A, 1013B, 1023A, 1023B, 1033A, and 1 / 33B) are partially filled with the small-diameter quartz glass tube, but are not necessary for the present invention. In another embodiment, the end elements may have different sizes and different locations of 200540937. Furthermore, the end element may be located in a recess or groove. · In another embodiment, one or more small glass tubes may be omitted. For example, a stack of caps 1090 may be coupled to the bottom of the support device 1050, and the second wire from the carbon wire heater may be pulled out vertically to the bottom heater surface through an opening (not shown) in the support device 1050. The sealed end 1090 may include a method of coupling the end wire to an external connection line. In addition, the sealed end may include a method of introducing nitrogen to avoid oxidation of the carbon wire heater, and also includes reducing the internal pressure of the heater and the end. A way.

Although a molybdenum (Mo) foil can be used for electrical conduction, another material such as a tungsten (w) foil can be used instead, but the elasticity of the molybdenum (Mo) foil is better. As for the plug member, a resin or an adhesive (using pulverization & 2 or g 2 0 can be used to avoid cracking due to drying during formation. In another embodiment, the heating elements (1010, 1020, and 103) are used. ) Can include multi-zone sections as shown in Figure 8. Stone counter heating can be made by weaving multiple carbon fiber bundles, each of which is now composed of ultra-fine carbon fibers. Compared to traditional metal heating elements, The carbon wire heater can have a relatively low heat capacity and a fast temperature change rate. And the carbon wire heater ^ has excellent high temperature resistance. Because the carbon wire heater is made of multiple woven fabrics, Composed of very fine carbon fiber, it is flexible and can be easily added to various configurations as a semiconductor heating unit. ^ 图 丨 丨 人 显 ^ Shows a simplified block diagram showing an embodiment of the present invention. A single wafer heating H module. In the illustrated embodiment, the single wafer plus module 11A shown includes two heating modules (111 and 112), but it is not necessary for the present invention. In other embodiments , Then Different configurations. For example, to imagine various applications that are circular, non-circular, planar, and non-planar. In FIG. 11A, a heating module 111o under a substrate 113 has a plurality of heating elements, and the heating element And contains—or multiple carbon wire heaters. The bottom is attached with :: two L packages and a quartz support device, and the heating element containing one or more carbon wire heaters can be assembled in the quartz support device. For example, the heating element 31 200540937 1110 may be made using at least one of a single-segment heating element and a multi-segment heating element. The heating element 1110 may be part of a substrate holder (not shown). &Quot;

A first heating element 1120 is located above the substrate 1130 and also includes one or more heating elements', and its heating element also contains one or more carbon wire heaters. The upper heating unit 1120 may include a quartz support device, and one or more heating elements containing one or more carbon wire heating elements may be assembled in the quartz support device. For example, the heating module 112 may be manufactured using at least one of a single-zone heating element and a multi-zone heating element. The heating assembly 1120 may be part of an upper assembly in a processing chamber (not shown). Arrow 1170 indicates the direction radiated by the heating unit. The pattern radiated by the heating element can be different, and the radiation (heating) pattern can be changed throughout the upper surface of the wafer and the following table ^. The use of one or more heating elements can provide a faster and more consistent thermal energy for the substrate 113. A wafer support 1140 may be used to fix and support the substrate between the two heating components. Alternatively, the substrate may be located on the lower component 1Π0. A soil controller 1150A may be coupled to and control the lower component 111, the upper component 112, and the wafer support 1140. The wafer support 1140 can be used to minimize and / or eliminate shadow shielding at the bottom of the substrate. Controls can be used to secure the substrate to provide independent power to each carbon wire heater in the upper and lower components. Alternatively, the upper unit / 1, the lower unit 1110, and / or the wafer support may include one or more temperature measurements (not shown), which can be integrated into the controller to control the unit. And / or the temperature of the substrate. The control of D1 to 1150A can provide a time-varying power level to one carbon wire heating element in the heating assembly. This domain power level may include-class pure, function t-number, constant function, -modulation function, and combinations of the foregoing. Slave wire heaters for heating components and low thermal mass can cause rapid temperature changes. Figure 11B shows a simplified block diagram showing a wafer heater assembly implemented in accordance with one of the present inventions. In the embodiment shown, a multiple _ 'is shown which contains three heating components (1⑸, and 1153) 32

200540937 friii is not required. In other embodiments, different numbers of heating components can be used, the same number of locations can be used, and different configurations can be used. For example, embodiments r f f =, non-circular, planar, and non-planar various applications. Arrow 117〇 indicates the direction radiated by the heating unit. For example, imi1151, 1152, and ιΐ53) may include—or a plurality of heating elements having one or =, and a friend for. The heating assemblies (1151, 1152, and 1153) are centrally supported, and the—or multiple—carbon-wire heater-to-quartz support ribs are used. For example, the heating element (ii5) 52 is made from a single-segment heating element and a multi-segment heating element to one after another. One or more heating elements may include a substrate support (not shown No) In the embodiment shown, two wafers are shown (1 leg and recommended B), but 'body hair is not necessary. In other implementations, different numbers of wafers can be used, and they can be used. Different configurations. The individual wafer supports Π1 and 丨 丨 can be fixed and supported separately on the two heating elements of the substrate heating module. Using multi-position heating modules can provide higher output. Multi Position heating components can provide faster and more consistent power for most substrates (113GA and 11 applications). A controller can be transferred to the control heating components (115 ^ 1152 and wafer holders). Wear magic diamond.) Crystal® support (114_ can be used to minimize and / or eliminate shadow shielding at the bottom of the substrate. Controlled to 1150B can be used to fix the substrate to provide an independent source to the heating assembly (ιι.ιΐ52 ^ and 1153) .Each carbon wire heater. A degree sensor (not shown) can also be used to control the temperature of the heating module, 5152 and the substrate. It can also provide 5 to the controller. The controller 115GB can provide-day $ to change the level to one of the touch towel Or multiple carbon wire heating ϋ. At this time, the variable power level can include-class function,-ramp function,: pulse number-a constant function,-modulation function and the combination of the foregoing. The slave wire heater of the heating assembly and the low thermal mass can be Make temperature change fast. 33 200540937 FIG. 12 shows a simplified block diagram showing a single wafer heater module according to another embodiment of the present invention. In the embodiment shown, a single heating module 1210 includes a Or more heating elements κι ?, and the heating element 1212 does not include one or $ slave wire heaters. In addition, in this embodiment, a wafer 23o, a wafer support 1240, and a controller are further shown. 1250, but it is not necessary for the present invention. In other embodiments, different configurations may be used. For example, additional heating components may be used. Or 'wafer holder may support more than one wafer. A controller 1250 may be coupled A temperature sensor (not shown) that can control the heating module can also be coupled to the controller to control the temperature of the heating module 121 °.

The controller 1250 can provide a time-varying power level to one of the heating components βίο or one heating element 1212 (carbon wire heater). The variable power level at this time may include a class j number, a ramp function, a pulsation function, a constant function, a modulation function, and a combination of the foregoing. The carbon wire heater of the heating unit and the low thermal mass allow rapid temperature changes. The heating assembly 1210 may include a supporting device, and a heating element 1212 having one or more carbon wire heaters may be assembled in the supporting device. The support device may contain quartz. The wafer support 1240 may contain a non-metal material such as quartz or silicon carbide. Wafer • The 124G series is shown to have three support points, but is not necessary for this issue. In the other implementation, there can be no support points, and the support points can also have different configurations. For example, the embodiments can also be imagined as non-circular applications. The controller 1250 can be turned to and can control the wafer holder. Wafer supports are meant to minimize and / or eliminate shadow shielding at the bottom of the substrate. The wafer support 124 may be used for and / or fixing a substrate. For example, the wafer support may provide a substrate / wafer. At least one of vertical movement, horizontal movement, and rotational movement. Alternatively, it includes—or a plurality of temperature sensors (not shown), and the temperature sensor T is coupled to δ to control the temperature of the substrate. S is a simplified block diagram showing another conventional example of the single-wafer heater according to the present invention. In the described embodiment, it is shown that the -single-heating component 34 200540937 1310 includes one or more heating elements 1312 and a plurality of wafer supporting elements = 20, wherein the heating element 312 further includes one or more carbon wires Heater. In addition, the present embodiment also shows a wafer 1330, a substrate holder 1340, and a controller 1350, but it is not necessary for the present invention. In other embodiments, different configurations may be used. For example, additional heating components and / or support components may be used. The heating assembly 1310 may include a quartz support device, and one or more heating elements having one or more carbon heaters may be assembled in the quartz support device. The single heating element 1310 may include a non-metal material such as quartz or silicon carbide. In addition, the module 1310 is shown to have three wafer support elements 132, but it is not necessary for the present invention. In other embodiments, different numbers of wafers may be used to support the element 1320, and the wafer support elements 1320 may have different configurations. For example, the embodiment can also be imagined as a wafer support element with bending and / or linear characteristics. Alternatively, the heating assembly 1310 and / or the wafer support element 1320 may include—or multiple temperature sensors (not shown), which may be coupled to a controller for controlling the temperature of the substrate. The controller 1350 can be coupled to and can control the heating module 1310, and the controller 1350 can provide a time-varying power level to one or more of the heating modules 1310 (carbon heaters). The variable power level at this time may include a class function, a ramp function, a pulsation function, a constant function, a modulation function, and combinations thereof. The carbon wire heater of the φ heating element and the low thermal mass can make the temperature change quickly. The controller 1350 may be coupled to and may control the substrate holder 1340. The substrate holder 1340 can be used to move and / or secure a substrate. For example, the substrate holder 1340 may provide at least one of vertical movement, horizontal movement, and rotational movement of a substrate / wafer. Alternatively, the substrate holder 1340 may have a different configuration. FIG. 14 shows a simplified block diagram showing another embodiment of a single wafer heater module according to the present invention. In the illustrated embodiment, a single wafer heating module 1400 is shown to include two heating modules (1410 and 1420), but this is not necessary for the present invention. In other embodiments, different configurations may be used. For example, embodiments can be imagined as circular, non-circular 35 200540937 shaped, planar, and non-planar applications. In FIG. 14, a side view, a top view, and a bottom view are shown. In FIG. 14, a heating element 1410 located below the substrate 1430 includes one or more heating elements having one or more carbon wire heaters. The bottom heating assembly 1410 may include a quartz support device, and the heating element 1412 having one or more carbon wire heaters may be assembled in the quartz support device. For example, the heating element 1412 may be manufactured using at least one of a single-zone heating element and a multi-zone heating element. Alternatively, the heating assembly 1410 may include a substrate supporting device (not shown).

A second heating element 1420 is located above the substrate 1430 and includes one or more heating elements 1422. The heating element 1422 also contains one or more carbon wire heaters. The upper heating module 1420 may include a quartz support device, and one or more heating elements containing one or more carbon wire heaters may be assembled in the quartz support device. For example, the heating element 1422 may be made using at least one of a single-zone heating element and a multi-zone heating element. The heating assembly 1420 may be a part of one of the components in a processing chamber (not shown). Arrow 1470 indicates the direction radiated by the heating unit. The radiation emitted by the heating element can be omitted, and the radiation (heating) pattern can be changed throughout the ± surface and the surface of the wafer. Using one or more heating groups provides faster and more consistent thermal energy for the substrate 1430. A wafer support 1440 can be used to hold and / or support a substrate located between two heating components. Alternatively, the substrate may be fixed on the lower component 1410. -The controller can be coupled to the control chip 141 (), 1420 and the wafer support 1440. The wafer support 1440 can be used for miniaturization and shadow shielding at the bottom of the substrate. The control unit can be used to fix the power supply to the upper module and each of the lower modules—carbon wire heaters. The lower module 1410 and / or the i-side of the wafer support may include multiple U = fast (not shown) No), the temperature sensor I! Can be used to connect the controller to the temperature of the component, the lower component and / or the substrate. ^ = 111450 can provide-time-varying power levels to the stone exhaust line heater in the heating assembly. The meaning power scale can include-a class function,-ramp = number < 36 200540937 a pulsation function, a constant function, a modulation function, and a combination of the foregoing. Carbon wire heaters for heating components and low thermal mass can cause rapid temperature changes. For example, the 'heating element may comprise one or more carbon wire heaters which may be contained in a quartz tube and / or a quartz support device. Each part shows a heating element having a plurality of linear shapes, but it is not necessary for the present invention. In other embodiments, different configurations may be used. For example, embodiments can be imagined as heating elements having curved and / or linear characteristics. In addition, although a circular wafer is shown here, it is not necessary for the present invention. Alternatively, non-circular wafers and / or substrates can also be accommodated. ^ FIG. 15 shows a simplified block diagram showing another embodiment of a single wafer heating win state device according to the present invention. In Fig. 15, a side view and a top / bottom view are shown. In the illustrated embodiment, a single heating module 1510 having a plurality of U-shaped heating elements 1520 is shown, but it is not necessary for the present invention. In other embodiments, different configurations may be used. For example, different numbers and / or different shapes of heating elements can be used. Each U-shaped element may include one or more heating elements having one or more carbon wire heaters. The heater may be included in a quartz tube and / or a quartz tube support device. In addition, although this example shows a circular wafer, it is not necessary for the present invention. Alternatively, non-circular wafers and / or substrates can also be accommodated. The tube heater can be bent into a U-shaped design to simplify the number of heater elements required. In some cases, tubular heaters are less expensive to manufacture and maintain, and can provide greater flexibility than disk heaters. • For example, the heating element 1520 may be manufactured using at least one of a single-zone heating element and a multi-zone heating element. The pattern radiated by the heating element may not be the same as the pattern, and the pattern can be varied throughout the upper and lower surfaces of the wafer. & Using one or more heating elements can provide a faster and more consistent thermal moon dagger for the substrate 153. The round support 1540 can be used to fix and support the base plate located in the heating element. Alternatively, the substrate may be located on the lower portion of the heating assembly. The L controller 1550 can be combined and used to control the heating module 1520 and the wafer support 37 200540937 seat 1540. The wafer support 1540 can be used to minimize and / or eliminate cross-bird shielding at the bottom of the substrate. The controller 1550 can be used to fix the substrate to provide an independent power source to heat each carbon wire heater in the 1520. Alternatively, the heating element 1520 and / or the wafer 1540 may include-or more temperature sensors (not shown), which may be connected to a controller to control the temperature of the heater assembly and / or the substrate. The port controller 1550 can provide time-varying power levels to carbon wire heating coils in the heating assembly. In this case, the variable power level may include-a class function, a-ramp function, a pulsation function, a constant function, a modulation function, and combinations thereof. Carbon wire heaters for heating components and low thermal mass can cause rapid temperature changes. …, Because the trace heating tree here has high chemical purity, and can provide very low temperature and metal pollution, the carbon wire domain device can be used as a mask or passive layer outside the window. Disposal and protection of freshness from _ or against the treatment of processing gas. Additional masking or passive layers may reduce the effectiveness of the heater. The wafer heating components described here can provide enhanced processing performance. In the example, independent thermal control of multiple heating zones is achieved with #reduction or "thermal ramp up," and heating with carbon wires. The rapid thermal response provided by the thermal mass provides a fast-response wafer heating assembly that can be used to pulsate-adjust the heat treatment. The thermal treatment is based on the rapid thermal response film provided by the low thermal mass associated with the wire heater element. When forming a layer-by-layer film, it can provide a higher acreage than the traditional treatment and provide an improved temperature adjustment control. The present invention provides a heating unit using a heating element with a vertical direction of 5 Λ 1-/ 〇 direction, the The wafer / substrate on the heating unit is in a required state. The recommended single thermal gradient of the heating unit is to enable the individual heater elements to be separated from each other in this configuration throughout the wafer area. In its typical continuous block heating, where the heat ladder is even higher throughout the wafer, a non-planar configuration can be used. For example, the heater 38 200540937 1 can be placed on the wafer The marginal walls and / or above are compensated to reduce the rate loss. Increasing the heater element iki located on the surface of the cymbal, and more control over the thermal gradient across the wafer, so the domain is well-balanced. For a specific embodiment of the invention, for those who are familiar with the novelty teachings and advantages of the present invention, all the modifications of the two = exemplary embodiments are shot. All modifications should be included in the present invention Within the scope. [Schematic explanation]

FIG. 1 shows an illustrative block diagram schematically showing a processing system according to an embodiment of the present invention; FIG. 2A shows a schematic cross-sectional view showing a substrate support according to an embodiment of the present invention; FIG. 2B A schematic block cross-sectional view is shown, showing a substrate support according to another embodiment of the present invention; FIGS. 3A to 3C are explanatory diagrams showing a heater unit according to an embodiment of the present invention; FIG. 4 shows A figure showing another heater unit according to an embodiment of the present invention; FIG. 5 shows a schematic diagram showing a heater unit according to an embodiment of the present invention; FIG. 6A shows a longitudinal direction A cross-sectional view showing an end element for a 1-in-1 connection cable and a carbon wire heater in accordance with an embodiment of the present invention; FIG. 6B shows a side cross-sectional view showing the end in accordance with an embodiment of the present invention Element; FIG. 7 shows a plan view showing a carbon wire heater according to an embodiment of the present invention; FIG. 8 shows a schematic view showing multi-zone heating according to an embodiment of the present invention. Fig. 9 shows a schematic diagram showing a multi-element plus 39 200540937 thermal unit according to an embodiment of the present invention; Figs. 10A to 10C show schematic diagrams of a multi-element heating assembly; 'y. Implementation according to one of the present invention Another block in the example is a block diagram showing a single wafer heater according to the present invention. FIG. 11B shows a simplified block diagram showing a multi-wafer heater module according to an embodiment of the present invention. FIG. 12 shows A simplified block diagram showing a single wafer heater assembly according to another embodiment of the present invention;

FIG. 13 shows a simplified block diagram showing another embodiment of the wafer heater assembly according to the present invention; FIGS. 14A to 14C show a simplified block diagram showing a single wafer heater assembly according to the present invention. Another solid silk wish. Figs. 15A to 15B show simplified block diagrams according to another embodiment of the single-wafer heating-state component of the present invention. [Description of main component symbols] 100 processing system 110 processing chamber 112 processing space 12 upper module 130 controller 140 substrate support 142 heating unit 144 heating unit 145 substrate 150 pressure control system 152 vacuum pump 154 gate valve WO wall temperature control unit 200540937 166 Wall temperature control element 170 Gas supply system 175 Gas distribution plate 180 Power supply 185 Radio frequency system 190 Gate valve assembly 194 Opening 200 substrate support 210 Heating unit 210A Heating unit 212A Supporting device 215 Centering ring 220 Heating unit 220A Heater unit 225 Rising part 230 thermal barrier 240 cooling unit 250 coupling unit 300A heater unit 300B heater unit 300C heater unit 310 circular center area 315 heating element 320 circular ring area 325 heating element 330 circular ring area 335 heating element 340 round Ring area 345 heating element 200540937 350 circular ring area 355 heating element 360 circular ring area 365 heating element 400 heater unit 410 square area 420 heating element 500 heater unit 510 heating element 511 ring tube 512A conversion element 512B conversion element 513A end element 513B End element 514A internal connection line 514B internal connection line 515 carbon wire heater 516 line carbon member 517A connection end 517B connection end 518 fluff 519 sealed end 800 heater unit 810, 820, 830, 840 heating element 811, 821, 831, 841 Curved tube 812A, 812B, 822A, 822B, 832A, 832B, 842A, 842B Conversion element 813A, 813B, 823A, 823B, 833A, 833B, 843A, 843B End element 42 200540937 814A, 814B, 824A, 824B, 834A, 834B , 844A, 844B Internal connecting wire 817A, 817B, 827A, 827B, 837A, 837B, 847A, 847B Connection end 819, 829, 839, 849 Sealed end 815, 825, 835, 845 Carbon wire heater 900 Heating assembly 910, 920, 930 heating unit 950 support device ^ 1000 heating element 1010, 1020, 1030 heating element '1011, 1021, 1031 recess or groove 1012, 1022, 1032 carbon wire heater 1012A, 1012B, 1022A, 1022B, 1032A conversion element 1013A, 1013B, 1023A, 1023B, 1033A, 1033B end elements 1014A, 1014B, 1024A, 1024B, 1034A, 1034B internal connecting wires 1019, 1029, 1039 sealed ends' 1015, 1025, 1035 1045 carbon wire heaters 1017A, 1017B, 1027A, 1027B, 1037A, 1037B 4 pulls ^ 1050 support device and 1070 cover 1100A, 1100B heating module 1110, 1120, 1151, 1152, 1153 heating module 1120 heating module 1130 substrate 1130A, 1130B wafer 1140, 1140A, 1140B wafer support 1150A, 1150B controller 1170 arrow 43 200540937

1210 heating element 1212 heating element 1230 wafer 1240 wafer support 1250 controller 1310 heating element 1312 heating element 1320 wafer supporting element 1330 wafer 1340 substrate holder 1350 controller 1410 lower heating element 1412 heating element 1422 heating element 1430 substrate 1440 wafer support 1450 controller 1470 arrow 1510 heating module 1520 U-shaped heating element 1530 substrate 1540 wafer support 1550 controller

Claims (1)

200540937 10. Scope of patent application: 1. A wafer heating assembly, including a. A) a support device having a plurality of recesses, the support device and a wafer support to support a wafer; b). A plurality of heating units, wherein at least one of the heating units includes: (^ 乂 笞, which has a carbon wire heater, the carbon wire heater includes a stone anti-fiber bundle and is enclosed in a tube, each tube is located in the In one of the recesses of the supporting device; and (2) ·: a connecting end coupled to the opposite ends of the carbon wire heater; and ml) · # —An f module, which is coupled to the supporting device and the wafer heating module is installed in a processing chamber. ′ Wherein one of the plurality of heating sheets is in a substantially linear recessed portion 2. At least one of the wafer heating module elements as described in the patent application No. 丨 includes a substantially straight tube installed in the supporting device. 4. As mentioned in the patent application, the wafer heating module of item 丨, at least one of them-the heating tube including the interesting number in the office. Dagger 3 is centered on the shaft recessed part of the bearing & placed in a ring shape, where a positive in the square recessed part of the plurality of heating orders. Installed in the support device square tube. For example, if a wafer heating module for a special fiber enclosing shaft is applied, one of the plurality of heating sheets 45 200540937 length includes-7. yuan installed in the rectangular recess of the supporting device; Heat a single round tube. • A wafer heating module of the ellipse 8 Yuan in the elliptical concave portion, wherein one of the plurality of heating elements includes a U-shaped tube installed in a concave portion of the supporting device . = If the wafer heating module of the patent application item 8 is applied, the recess includes a U $ to the crystal scope of the patent application item 1 heating application, wherein the plurality of heating orders—including the plurality of sections, each— The section has a substantially straight tube, which is dense—carbon wire heating 11, each of the carbon wire heaters contains a carbon fiber ^ and ⑵—connecting terminals, which are lightly connected to the I section of each carbon wire heater. It is the wafer heating module of item 1 of each Ltri patent range of the solid f linear concave fiber device installed in the supporting device, wherein the plurality of heating orders will be-including a plurality of sections, each-zone The section has—substantially straight tubes, and high quality officials have a carbon wire heater, each carbon wire heater contains a carbon seal therein, and (2) a connection terminal that fits each carbon wire heater | Li Er And the plurality of sections are square recesses installed in the supporting device. For example, the wafer heating module of the patent application scope item 1, wherein the addition of the plural 埶 i = less of them-including the area of plural Segments, each segment has an early M straight tube with -carbon heating n, per carbon The heaters each contain 0 bundles of carbon fiber 46 200540937 sealed in each p; and (2) a connection terminal coupled to the end, and the plurality of sections are arranged in rectangular recesses of the supporting device, ^ one of it contains a hard-numbered section, each of which has a -bending spokesman has a carbon wire heater, each carbon wire heater contains a = enclosed therein; and ⑵-connecting terminals It is connected to each carbon wire plus each ^ end, and the plurality of sections are installed in the curved shape of the supporting device ^ concave end ^ 4 such as the wafer heating module of the patent application No. 13 Contains a ring. $ 叫 队 心 槽 Wherein the curved depression 15. The wafer heating module part of item 13 of the patent application scope includes an oval shape. 16. The wafer heating assembly of item 1 in the patent application scope, which further includes: a) a thermal barrier coupled to the supporting device; and b) a cooling unit coupled to the thermal barrier. Π. For example, the wafer heating module according to the scope of the patent application, further comprising a temperature sensor coupled to the supporting device. σ = as in the wafer heating assembly of item 1 of the patent application, wherein the heating unit further includes: a conversion element face-to-face to the respective end of the tube; and a sealed end coupled to one of the conversion elements, Each connection is coupled to at least one sealed end. 192. The wafer heating module as described in the patent application No. μ, wherein the tube and the exchange element are made of a single piece of material. 47 200540937 〒 · 入 如 ΐ :: Wafer heating module according to item 19 of the patent, wherein the single-piece material includes a quartz glass tube. The crystal 81 heating module of the 18th item of the scope of benefits of TW Early Moon Materials, where the tube is made of 1-sheet peach, and the conversion element is made of the second sheet of material. The Xiang Xiangjing f heating element, wherein the first-sheet material, "one, one, or both" includes a quartz glass tube. 23. The wafer plus item 18 of the scope of patent application, including a device for sealing the end portion of the conversion element. 1,000, ^ read ^ Baoqing The wafer heating module of item 18 of the patent, which includes a device for sealing the end of the tube. The 2H ° t package of the mountain pair of knitting bags, please refer to the wafer heating module of item _18, in which the adding unit further includes' coupling to the opposite ends of the carbon wire heater, which contains the pressure-sensitive components, and the miscellaneous Adding wire is buried in the man-machine line. 26. The wafer heating assembly according to item 1 of the patent application scope, wherein the carbon-containing wire includes at least carbon fiber bundles, each of which has at least 300 carbon fibers having a diameter of 5 to 15 microns. * Included are all lines and 27. For example, the wafer heating module of item 26 of the patent application scope, wherein the surface of the 轳 is fluffy. Long 48 200540937 which further includes a wafer coupled to the wafer support package which has at least one raised portion package wherein the wafer support package 'at least one raised portion 29 The cover of the supporting device of the heating assembly. 30. The wafer heating module according to item 29 of the patent application includes a plurality of projections on the cover. 31. If the wafer heating module of the 30th patent application scope includes a temperature sensor. 32. The wafer heating module according to item 1 of the patent claim includes a plurality of raised portions on the supporting device. 33. If the patent application scope of the 32nd wafer heating module includes a temperature sensor. The round support includes the wafer heating module according to item 1 of the patent application scope, wherein the crystal has a quartz wafer support having at least three supporting points. 35. The wafer heating module according to item 1 of the patent application scope, further comprising: a) an added heating unit comprising: (1) an added tube having a carbon wire sealed in the added tube A heater, the carbon wire heater including a carbon fiber bundle, and (2) a connection% which engages the opposite ends of the carbon wire heater of the added heating unit; and ... ° b)-an added mounting assembly , Which is coupled to the added supporting device, and is used for fixing the added heating unit on the wafer support. 36. If the wafer heating component of the first patent application scope further includes: a) an added heating unit, which includes: 49 200540937 (1) an added tube having a carbon sealed in the added tube Line heater 'The carbon line heater includes a carbon fiber bundle, and (2)-a connection end coupled to the opposite ends of the carbon line heater of the added heating unit; and b)-an added mounting assembly It is coupled to the added support device and is used to substantially fix the added heating unit around the wafer support. 37. If the wafer heating component of the patent application item No. 丨 further includes: a) —Added heating unit, which includes: (1) an added tube, which has a carbon wire heater sealed in the added tube, the carbon wire heater includes a carbon fiber bundle, and (2) a connection terminal, which is coupled to the added tube; The opposite ends of the unit obstructing the wire heater; b added support device 'it is lightly closed to the added tube; and added mounting assembly' it is lightly attached to the added support device and used to add wire The freshening element is fixed above the wafer support. 38. The wafer heating assembly according to item i of the patent application scope, further comprising: a) an added heating unit, which includes: L 4 added moss' which has a carbon wire sealed in the added tube, the carbon ΐ The heater also contains a carbon fiber bundle, and the opposite end, which is coupled to the carbon wire heater of the added heating unit "1: 2 plus 5 bearing devices, which are coupled to the added tube •, and to the added The force ===== on the device, and the wafer heating module used in a) month-specific item 1 further includes: a bearing device having a plurality of second recesses, the second supporting device 200540937 A second heating unit for supporting a second wafer with at least one of the second plurality of heating units includes at least one of the second heating unit: a carbon fiber heater having-containing-a carbon fiber bundle Each tube is installed in the recess in the second supporting device, and (2) the plant connection end is lightly closed to the opposite ends of the carbon wire heater; and 40 · A substrate processing method, the steps of which include: a) will- The substrate is fixed on a substrate support in the processing chamber, wherein the substrate support has a plurality of heating units, each heating unit includes ... (j) a tube and a carbon fiber bundle sealed in the tube A carbon wire heating tube, a mother tube is installed in a recess of the substrate support; (2) a connection end coupled to the opposite ends of the carbon wire heater; and, b) on the substrate A rapid heat treatment is performed on the top of which a 1% power source is connected to each connection terminal, and a DC power source is quickly applied to the carbon wire heater. φ 41 · A wafer heating assembly comprising:-a) a device supporting a semiconductor wafer; b) a device for independently heating different regions of a semiconductor wafer; and c) a device coupled to the device for supporting For mounting the wafer heating module in a processing chamber. 42 ·-A method for processing a substrate, the steps of which include independently controlling multiple carbon wire heater zones with independent temperature sensors to provide a fast response of a multi-zone single wafer heater system to each independent zone This control can be adjusted from rapid thermal fluctuations to minimize wafer distortion. 51 200540937 43 The amount of substrate is 2-the thermal variation of the control is fast enough. ,, ..., increase by 1 so that the processing i4 carbon management is located on the opposite side of the substrate: heater • and-or more-: = 独 之 = speed domain heat: 45. If item 丨 of the scope of patent application, the interaction of the carbon wire heater element A, Y. Said 51 heating assembly, which further includes a corresponding cooling circuit material used to circulate the cold $ P circuit to increase the speed of thermal response, the cold coolant material or fluid. 7 purpose or other purpose gas, or heat compatible