KR20070008569A - Wafer heater assembly - Google Patents

Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or `braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by- layer film formation for improved thin film control. ® KIPO & WIPO 2007

Description

Wafer Heater Assembly {WAFER HEATER ASSEMBLY}

The present invention relates to a substrate holder, and more particularly to a single wafer heater assembly of a substrate holder having a low thermal mass and a fast response time.

As semiconductor manufacturing technology advances, there is an increasing demand for improved yield to reduce costs, and in order to meet this increased demand, the diameter of the semiconductor wafer is increased to provide a plurality of semiconductor circuits. Usually, in order to improve the yield more, improvement of temperature control is calculated | required.

During semiconductor processing, the substrate holder can be used to control the temperature of the wafer / substrate. In single wafer processing, fragment resistance heaters are used, which are difficult to control. Problems with conventional single wafer heater systems are as follows. That is, there is a possibility of metal contamination by the components, limited thermally independent zones (limited by the problem of thermal stress destruction of the heater / susceptor), uniformity due to the heat loss effect of the edge, and thermal mass Cursor temperature response time is limited, there is a problem that the wafer distortion and slip defects occur due to excessive temperature gradient across the wafer. As wafers grow larger and device characteristics become smaller and smaller, better single wafer heaters are needed to improve processing performance.

For this reason, heaters with more uniform heating characteristics and faster response times are required.

The present invention relates to an apparatus and method for controlling a wafer / substrate mounted on a substrate holder in a processing chamber.

The present invention provides a substrate holder comprising a heating unit with more uniform heating characteristics and a faster response time. In one aspect of the present invention, a unique heater element in which high-purity carbon wire is enclosed in quartz is implemented. The heater element is adapted to emit electromagnetic radiation similar to conventional metal-wire heater elements, and the heater element has a low thermal mass for rapid temperature change.

By improving the structure of single wafer heaters and excluding contaminants typically present in conventional heater elements, it is possible to broaden the application of the process. New applications range from low temperature SOG hardening to high speed high temperature spike annealing. If the thermal mass is low and the temperature response is rapid, processing means are provided to improve control of thin film formation by pulsing a reaction or pyrolysis similar to an interlayer growth mechanism.

Various embodiments of the present invention and many of the attendant advantages of the present invention will become readily apparent with reference to the following detailed description, particularly in view of the detailed description taken in conjunction with the accompanying drawings.

1 is an exemplary block diagram schematically illustrating a processing system according to an embodiment of the present invention.

2A is a simplified cross-sectional view of a substrate holder in accordance with one embodiment of the present invention.

2B is a simplified cross-sectional view of a substrate holder in accordance with another embodiment of the present invention.

3A-3C are exemplary schematic views of a heater unit in accordance with one embodiment of the present invention.

4 is a schematic view of another heater unit according to an embodiment of the present invention.

5 is a simplified diagram of a heating unit in accordance with one embodiment of the present invention.

6A is a longitudinal sectional view of an end point element for connecting a connection line and a carbon wire heater according to an embodiment of the present invention.

6B is a side cross-sectional view of an end point element in accordance with an embodiment of the present invention.

7 is a plan view of a carbon wire heater according to an embodiment of the present invention.

8 is a simplified diagram of a multi-zone heating unit in accordance with one embodiment of the present invention.

9 is a simplified diagram of a multi-element heating assembly in accordance with one embodiment of the present invention.

10A-10C are simplified diagrams of another multi-element heating assembly in accordance with one embodiment of the present invention.

11A is a simplified block diagram of another embodiment of a single wafer heater assembly in accordance with the present invention.

11B is a simplified block diagram of a multi-wafer heater assembly in accordance with an embodiment of the present invention.

12 is a simplified block diagram of a single wafer heater assembly according to another embodiment of the present invention.

13 is a simplified block diagram of another embodiment of a single wafer heater assembly in accordance with the present invention.

14A-14C are simplified block diagrams of another embodiment of a single wafer heater assembly in accordance with the present invention.

15A-15C are simplified block diagrams of another embodiment of a single wafer heater assembly in accordance with the present invention.

In a material processing system, the substrate and / or wafer are placed on a holder, such as a chuck, for example comprising heating and / or cooling elements. In one embodiment of the present invention, an improved holder is provided comprising a unique heater element provided with a high purity carbon wire surrounded by quartz.

1 is an exemplary block diagram of a processing system according to an embodiment of the present invention. For example, processing system 100 may include an etching system, such as a plasma etcher. Alternatively, processing system 100 may include a photoresist coating system, patterning system, developing system, and / or combinations thereof. In other embodiments, the processing system 100 may be a heat treatment system, such as a rapid heat treatment (RTP) system, a chemical vapor deposition (CVD) system, a physical vapor deposition (PVD, iPVD) system, an atomic layer deposition (ALD) system, and / Or combinations thereof.

The processing system 100 may include elements for controlling the temperature of the chamber walls. As shown, the wall temperature control element 166 may be connected to the wall temperature control unit 160, and the wall temperature control element 166 may be connected to the processing chamber 110. The temperature control element may comprise a heater element and / or a cooling element. For example, the heater element may comprise a resistance heater or a carbon heater element. Temperature-sensing devices such as thermocouples (eg, K-type thermocouples, Pt sensors, etc.) may be used to monitor the temperature of the processing chamber 110. The controller can also control the temperature of the processing chamber 110 using the temperature measurement as feedback to the wall temperature control unit 160.

In addition, the processing system 100 may further include a pressure control system 150 coupled to the processing chamber 110 to control the pressure within the processing chamber 110. The pressure control system 150 may include a gate valve 154 and a vacuum pump 152 and a pressure sensor (not shown) for controlling the pressure in the chamber. For example, the vacuum pump 152 may include a turbo-molecular vacuum pump (TMP) capable of pumping up to a rate of 5000 liters per second. The TMP can be a Seiko STP-A803 vacuum pump, or an Ebara ET1301W vacuum pump. TMPs are typically useful for low pressure treatments below 50 mTorr. For high pressure (ie greater than 100 mTorr) treatment or low throughput treatment (ie no gas flow), a mechanical booster pump and a dry roughing pump can be used. Although the pressure control system 150 is shown connected to the bottom of the processing chamber 110, this configuration is not essential. In a variation, the pressure control system 150 may be connected to the top and / or side of the processing chamber 110. The controller can also control the pressure in the chamber using the pressure measurement as feedback to the pressure control system.

For example, the processing chamber 110 may facilitate forming a processing plasma in the vicinity of the substrate 145 in the processing space 112. Alternatively, the processing chamber 110 may facilitate forming process gas in the vicinity of the substrate 145 in the processing space 112. Processing system 100 may be configured to process a 200 mm substrate, a 300 mm substrate, or a larger substrate. In a variation, the processing system 100 can include a plurality of processing chambers, which can operate to generate plasma in one or more processing chambers.

The processing system 100 may further include an upper assembly 12 connected to the processing chamber 110. For example, the upper assembly 120 may include a gas distribution plate 175 connected to the gas distribution system 170 that introduces process gas into the processing space 112 in the processing chamber 110. The gas distribution plate 175 may further include a plurality of orifices (not shown) configured to distribute one or more gases from the gas distribution system 170 to the processing space 112 of the processing chamber 110. The process gas may include at least one of NH ₃ , HF, H ₂ , O ₂ , CO, CO ₂ , Ar, He, or N ₂ . As used herein, the expression “at least one of A, B, C ... or X” includes any of the listed elements, or any combination of one or more of the listed elements. I mean. For example, during the poly process and / or nitride forming process the process gas may comprise at least one of DCS, TCS, SiH ₄ , Si ₂ H ₆ , HCD, or NH ₃ , and during the CVD oxide forming process the process gas may be TEOS or May comprise at least one of BTBAS, wherein the process gas may comprise at least one of H ₂ O, TMA, HTB, NO, or N ₂ O during an ALD process, and the process gas may be tungsten carbonyl during a metal CVD process. It may include at least one of, rhenium carbonyl, or Taimata.

In addition, the upper assembly 120 may be configured to perform at least one of the following functions. That is, the upper assembly may include providing a capacitively coupled plasma (CCP) source, providing an inductively coupled plasma (ICP) source, providing a transformer-coupled plasma (TCP) source, and microwave plasma source. And a function of providing an electron cyclotron resonance (ECR) plasma source, a function of providing a helicon wave plasma source, or a function of providing a surface wave plasma source.

For example, the upper assembly 120 can include RF components (not shown) and / or magnet system components (not shown). The upper assembly 120 may also include a supply line, injection device, and / or other gas supply system components (not shown). In addition, upper assembly 120 may include a housing, cover, sealing device, and / or other mechanical components (not shown).

In a variation, the processing chamber 110 may further include a chamber liner (not shown) or a process tube (not shown) that protects the processing chamber 110 from, for example, the processing plasma in the processing space 112. In addition, the processing chamber 110 may include a monitoring port (not shown). For example, the monitoring port can allow optical monitoring of the processing space 112.

The substrate 145 may be moved into and out of the processing chamber 110, for example, through an opening 194 controlled by the gate valve assembly 190. In addition, the substrate 145 may be transferred onto and from the substrate holder using a robotic substrate transfer system (not shown). In addition, the substrate 145 may be held by a substrate lift pin (not shown) received in the substrate holder 140 and may be mechanically translated by an apparatus housed in the substrate lift pin. Once the substrate 145 is received from the substrate transfer system, the substrate can be lowered to the top surface of the substrate holder 140.

The substrate 145 may be attached to the substrate holder 140 via an electrostatic clamping system, but a passive wafer restraint is usually sufficient. In addition, the substrate holder 140 may further include a cooling system, which receives heat from the substrate holder 140 and transfers the heat to a heat exchanger system (not shown), or when heated, a heat exchanger system. A recycle coolant stream that transfers heat therefrom. In addition, gas may be delivered to the backside of the substrate 145 through the backside gas system to improve gas-gap thermal conductivity between the substrate 145 and the substrate holder 140. Such a system can be used when temperature control of the substrate is required at high or low temperatures. In other embodiments, heating elements, such as resistance heating elements, or thermoelectric heaters / coolers, may be included.

In a variation, the substrate holder 140 may further comprise a vertical translational device (not shown), which may be surrounded by, for example, a bellows (not shown), which may be the substrate holder 140 and the processing chamber 110. ), And is configured to seal the vertical translational motion device from the decompression dust in the processing chamber 110. In addition, a bellows shield (not shown) configured to protect the bellows may be connected to the substrate holder 140. The substrate holder 140 may further include, for example, a focus ring (not shown), a shield ring (not shown), and a baffle plate (not shown).

In the example embodiment shown in FIG. 1, substrate holder 140 may include an electrode 144 through which RF power may be coupled to process gas in processing space 112. For example, substrate holder 140 may be electrically biased at RF voltage via RF power transfer from RF system 185. In some cases, RF bias can be used to heat the electrons to form and maintain the plasma. Typical frequencies for RF bias may be in the range of 1 MHz to 100 MHz. For example, semiconductor processing systems using 13.56 MHz for plasma processing are well known to those skilled in the art.

As shown in FIG. 1, the substrate holder 140 may include a heating unit 142 for heating the substrate 145. The power source 180 can provide DC power to the heating unit 144, and the heating unit can provide radiant energy to the substrate 145.

Further, in another embodiment, the substrate holder 140 may include a protective barrier (not shown) formed on one or more exposed surfaces of the substrate holder 140. In a variation, a protective barrier (not shown) may be formed on one or more interior surfaces of the upper assembly 120. Protective barriers may include nitride compounds such as aluminum nitride, and / or polyimide compounds.

In a variation, the protective barrier can be made in a variety of ways when used to protect components within the processing system 100. In one example, a protective barrier can be made by anodizing the metal and impregnating Teflon on the surface thus anodized. For example, a protective barrier can be formed by hard anodizing aluminum or hard anodizing aluminum alloy and impregnating Teflon on the hard anodized surface. In other cases, the protective barrier is Al ₂ O ₃ , yttria (Y ₂ O ₃ ), Sc ₂ O ₃ , Sc ₂ F ₃ , YF ₃ , La ₂ O ₃ , CeO ₂ , Eu ₂ O ₃ , or DyO _It can be made using at least one of _three . In addition, the protective barrier may include at least one of a Group 3 element (third vertical line in the periodic table) and a Lanthanon element, and the Group 3 Element may include at least one of Yttrium, Scandium, or Lanthanum. It may include at least one of cerium, dysprosium, or flow path product.

In addition, the protective barrier may be formed as part of the preliminary process coating (eg, depositing SiN or Si prior to coating of the required process thin film) in the processing chamber.

In addition, the processing system 100 may include a controller 130. The controller 130 may be connected to the chamber 100, the upper assembly 120, the substrate holder 140, the pressure control system 150, the pumping system 160 and the SIA 180. The controller may be configured to provide control data to components of the system and to receive process and / or state data from components of the system. For example, controller 130 may include a microprocessor, memory (eg, volatile memory or nonvolatile memory) and digital I / O ports, which may be input only to processing system 100. As well as generating a control voltage sufficient to deliver and activate the monitor output from the processing system 100. The controller 130 also includes a chamber 110, an upper assembly 120, a substrate holder 140, a pressure control system 150, a wall temperature control unit 160, a gas supply system 170, a substrate holder temperature control. Information may be exchanged with the unit (TCU) 180 and the gate valve assembly 190. In addition, using the program stored in the memory, it is possible to control the above-described components of the processing system 100 according to the process recipe (process recipe). In addition, the controller analyzes the process and / or state data, compares the process and / or state data with the target process and / or state data, and uses the comparison results to change the process and / or system components. It can be configured to control. In addition, a controller analyzes the process and / or state data, compares the process and / or state data with historical process and / or state data, and uses the comparison results to predict, prevent, and / or declare failures. It can be configured to.

In addition, the processing chamber 110 may be heated or cooled to a temperature of 30 to 150 ° C, for example the temperature may typically be 40 ° C. In addition, the gas distribution system may be heated to a temperature of 40 to 150 ° C, for example the temperature may typically be 50 ° C. The substrate may be maintained at a temperature of 250 to 1000 ° C, for example the substrate temperature may typically be 500 ° C.

2A is a simplified cross-sectional view of a substrate holder in accordance with one embodiment of the present invention. As shown in FIG. 2A, the substrate holder 200 may be configured to be substantially insulated from the processing chamber. The centering ring 215 may be connected to the substrate holder. For example, the centering ring 215 may comprise Teflon.

In a variation, the substrate holder 200 may comprise a protective barrier (not shown) formed on the top surface of the substrate holder, and the protective barrier may comprise a compound, including Teflon.

As shown in FIG. 2A, the substrate holder 200 includes a heating assembly 220 having a heating unit 210, a thermal barrier 230, a cooling unit 240, and a connection unit 250. do.

Cooling system 240 may include a recycle coolant (not shown) that receives heat from the substrate holder and transfers the heat to a heat exchanger system (not shown).

In addition, heat transfer gas may be transferred to the rear side of the substrate 145 through the rear side gas system to improve the gas-gap thermal conductivity between the substrate 145 and the substrate holder 140. For example, the heat transfer gas supplied to the rear side of the substrate 145 may be an inert gas such as helium, argon, xenon, krypton, or the like, and a process gas such as CF ₄ , C ₄ F ₈ , C ₅ F ₈ , C ₄ F _6, or the like. Or other gases such as oxygen, nitrogen, N ₂ O, NO or hydrogen. For example, the backside gas system may include a multi-zone gas distribution system, such as a two-zone (center edge) system, whereby the backside gas gap pressure is independently changed between the center and the edge of the substrate 145. Can be. In other embodiments, heating / cooling elements, such as resistive heating elements or thermoelectric heaters / coolers, may be included in the chamber walls of the processing chamber 110 as well as the substrate holder 140.

For example, the heating assembly 220 may be made of an electrically nonconductive and thermally conductive material, such as quartz, and the heater of the heating unit 210 may be made of an electrically conductive material, such as high purity carbon wire or the like. .

For example, the thermal barrier 230 may be made of a thermally variable material having variable thermal conductivity, such as quartz, alumina, teflon, and the like.

For example, the cooling unit 240 may be made of a material that is electrically and thermally conductive, such as aluminum, stainless steel, nickel, and the like.

For example, the connection unit 250 may be made of a heat resistant material having a relatively low thermal conductivity such as quartz, alumina, teflon, or the like. Alternatively, connection unit 250 may be made of a material that is electrically and thermally conductive, such as aluminum, stainless steel, nickel, and the like.

In a variation, components 220, 230, 240, and 250 may have protective barriers (not shown) formed on one or more of their outer surfaces. For example, the protective barrier can be formed as described above.

For example, the cooling unit 240 may include a coolant channel (not shown) therein, which coolant channel, water, Fluorinert, Galden, to conduct-convective cool the substrate holder 140. Allow coolant, such as (Galden) HT-135, to have a certain flow rate. Alternatively, the temperature cooling unit 240 may comprise an array of thermoelectric elements, which are capable of heating or cooling the substrate holder depending on the direction of the current flowing through each element. Exemplary thermoelectric devices include the Model ST-127-1.4-8.5M (40 mm × 40 mm × 3.4 mm thermoelectric devices with a maximum heat transfer power of 72 W) available from Advanced Thermoelectric.

In addition, the substrate holder 140 may further include an electrostatic clamp (ESC) (not shown) made of a non-conductive material in which the clamping electrode is embedded. Design and implementation of such clamps are well known to those skilled in the art of electrostatic clamping systems.

In addition, the substrate holder 140 may include an inert gas including a heat transfer gas (eg, helium, argon, xenon, krypton, and the like) and a process gas including CF ₄ , C ₄ F ₈ , C ₅ F ₈ , C ₄ F ₆ , and the like. Or other gas, including oxygen, nitrogen, hydrogen, or the like) to the rear side of the substrate 242 through the at least one gas supply line 342 and at least one of the plurality of orifices or channels. It may further comprise a system (not shown). The backside gas supply system 340 may be a multi-zone supply system, such as a two-zone (center-edge) system or the like, in which the backside pressure may vary from center to edge in the radial direction.

The substrate holder 140 may further include a thermal barrier 230 to further insulate the heating assembly 220 from the lower cooling unit 240. In one embodiment, the thermal barrier may include a heat insulation plate provided in the substrate holder. For example, the heat insulating plate may include a circular disk, and a reflecting surface may be provided on the upper surface. The thermal barrier may comprise at least one of a transparent quartz glass material, an opaque quartz glass material, a silicon carbide compound, or a silicon carbide-silicon compound.

The reflective surface may include an insulating coating film including at least one of silica fine powder, alumina fine powder, and titanium oxide fine powder. The reflective surface has thermal insulation and shielding properties. The insulation board can improve the thermal efficiency of the heating unit by reflecting the radiant heat radiation from the heater element.

In one embodiment, the mixing ratio between the silica fine powder and the alumina fine powder constituting the reflective insulating coating film is approximately 3: 1 to 3: 7, and the insulating coating film may further include titanium oxide fine powder. For example, the average particle size of the silica fine powder, the alumina fine powder, and the titanium oxide fine powder may be about 0.1 to 200 microns. When mixing titanium oxide fine powder, it mixes in the ratio of 50-150 mass parts per 100 mass parts of alumina. The film thickness of the reflective insulating coating film can be from about 30 microns to about 300 microns. When the thickness of the reflective insulating coating film is less than 30 microns, the insulation and shielding properties are deteriorated, and when the thickness of the insulating coating film is larger than 300 microns, cracking may occur.

In addition, a high purity insulating material can be used to fill the space under the heat insulating plate. When using a high purity insulating material, the board | substrate heating apparatus excellent in insulation, shielding property, and heating efficiency can be ensured.

In a variant, a reflective insulating coating film can be applied to the top and bottom surfaces of the circular disk. For example, a 30-200 micron thick material may be applied and fired at about 1000 ° C. to form a reflective insulating coating film. Even if the film is exposed to high temperature conditions of 1200 ° C. or more for a long time, deterioration, peeling and discoloration of the film do not easily occur. In addition, when the thickness of the film is about 100 microns, a heat ray having a wavelength of 2.5 microns may reflect at least 45%.

In a variation, thermal barrier 230 may include an insulation gap (not shown), which is connected to a pressure control system and / or to a gas supply (not shown) to change its thermal conductivity. It can be evacuated using a connected vacuum line (not shown) or a pumping system (not shown). The gas supply may be a backside gas supply used to connect the heat transfer gas to the backside of the substrate 145. In a variant, no thermal barrier is needed.

In one embodiment, the top surface of the substrate holder is flat and the substrate can be lowered in the direction of the top surface of the substrate holder and / or raised from the top surface of the substrate holder using a set of lift pins. For example, the substrate can be raised or lowered through the quartz fins, and the substrate holder can include a hole in the quartz carbon wire heater assembly, the hole allowing the quartz fin to translate through the carbon wire heater assembly. do. When the substrate is in close contact with the surface of the substrate holder, the rate of conduction increases in the transfer of radiant energy. Using quartz in the upper surface portion of the substrate holder reduces backside contamination problems. For example, metal contamination can be substantially excluded.

2B is a simplified cross-sectional view of a substrate holder according to another embodiment of the present invention. In the illustrated embodiment, heater assembly 220A and substrate 145 are shown. The heater assembly 220A may include a heating unit 210A, which may include at least one carbon wire heater, and a holding device 212A.

As shown, the top surface of the heater assembly may include a ridge 225, on which a substrate may be placed. The ridge 225 is high enough to allow the wafer transfer mechanism (fork) to translate between the substrate and the top surface of the substrate holder to lift the substrate from the substrate holder or to lower the substrate onto the substrate holder. Can be made.

The holding device 212A, the heating unit 210A and the ridge 225 may comprise quartz. Heating unit 210A may be comprised of one of several structures described herein.

In the illustrated embodiment, the heating unit 210A is shown mounted on top of the holding device 212A, but this is not required. Alternatively, the heating unit can be mounted in other ways.

In a variation, the temperature sensor may be disposed within the ridge 225 and / or the retaining device 212A. The temperature sensor can be used to measure the heater assembly temperature and / or the substrate temperature. In addition, data from the temperature sensor can be used to determine other characteristics (eg, curvature) of the wafer.

In addition, the provision of a quartz substrate holder can improve the maintenance of the processing system. It is unlikely that process products and by-products will react and / or adhere to the quartz surface of the substrate holder. In addition, when the substrate holder comprises quartz, more aggressive and / or more frequent cleaning may be performed.

Since the substrate holder has such a wide operating temperature range, it is possible to clean the substrate holder without opening the chamber. For example, during the cleaning process the temperature of the substrate can rise to a certain high temperature. This cleaning process may be performed separately or as part of a chamber cleaning process.

As described above, the substrate holder including the carbon wire heater can be used in various applications because it can have a very wide operating range, very fast temperature response, and excellent transfer characteristics.

Single wafer heater assemblies in deposition systems such as chemical vapor deposition (CVD) systems, plasma chemical vapor deposition (PECVD) systems, physical vapor deposition (PVD) systems, ionized physical vapor deposition (iPVD) systems, and atomic layer deposition (ALD) systems (Substrate holder) can be used.

In addition, single wafer heater assemblies (substrate holders) may be used in heat treatment systems such as rapid heat treatment (RTP) systems, rapid thermal annealing (RTA) systems, drying systems, developing systems, and spike-annealing systems.

It is also possible to use a single wafer heater assembly (substrate holder) for etching systems and chemical oxide removal (COR) systems.

As such, a single wafer heater assembly must be operated with multiple different types of wafers having different characteristics. The wafer at the beginning of the process development cycle differs structurally from the wafer at the end of the process development cycle. The temperature response of the wafer during the dislocation process is different from that of the same wafer during the post process. The single wafer heater assembly works effectively during dislocation and post treatment.

The multi-zone single wafer heater assembly enables independent control of the selected area of the wafer. For example, the center area may be controlled differently from the outer area. This can be done to compensate for thermal radiation differences in different regions of the wafer. Multi-zone single wafer heater assemblies can be equipped with multiple carbon wire heaters to suit multiple different process recipes, different chamber pressures, different process chemistries, different process gas flows, different wafer types, and different process times. By providing different power levels, the temperature of the wafer can be kept uniform.

Wafers with different film coatings can have different radiation and heat transfer characteristics. In addition, the thermal properties of the wafer may depend on the amount of doping, and a single wafer heater assembly may be programmed to compensate for the difference in thermal properties of this wafer.

In a variation, by rotating a portion of the wafer and / or heater assembly, the uniformity of the wafer can be improved. In this way, small differences in heat transfer and heat loss can be averaged. Optimization of process uniformity can lead to increased process yields.

There are two basic methods for controlling a single wafer heater in the substrate holder, namely the closed loop method of feeding back measurement data to the controller, and the open loop method depending on the repeatability of the process and the pre-measured data for the process. Can be used.

Since the single wafer heater assembly can operate at high temperatures and can rise to a predetermined temperature in a short time, it can be used to form a thin oxide layer. High temperature oxides can have low leakage currents and stresses and high reliability.

Since the single wafer heater assembly can operate at high temperatures and can rise to a predetermined temperature in a short time, it can be used to form a thin layer of silicon oxynitride. The silicon oxynitride layer may have low leakage current and stress and high reliability.

Since the single wafer heater assembly can operate at high temperatures and can rise to a predetermined temperature in a short time, it can be used to form various thin dielectric layers.

Since the single wafer heater assembly can operate at high temperatures and can rise to a predetermined temperature in a short time, it can be used to perform a thermal annealing step.

Single wafer heater assemblies can be used in RTA processes because high temperature ranges and fast response times are required to better anneal the dopant during the formation of ultra-thin junctions.

By performing the thermal annealing step using the wafer heater assembly according to the present invention, it is possible to lower the sheet resistance, reduce the junction depth, and lower the defect density at the junction.

Since the carbon heating element in the quartz substrate holder can provide excellent in-chamber impurity control and junction enhancement, a single wafer heater assembly can be used for multiple processes.

In deep submicron CMOS technology, silicides are used to lower the contact resistance and source-drain series resistance as well as the sheet resistance of the source, drain and gate regions. Because CMOS processes are becoming smaller, some problems arise in silicidation modules.

Annealing temperature and process kinetics depend on the metal used, and the present invention can be used for various metals such as NiSi, TiSi ₂ , CoSi _2, and the like. The single wafer heater assembly allows control of contaminants before, during and after the annealing process.

Integrating one or more carbon wire heaters into a substrate holder can reduce thermal budget, speed up processing, and reduce cost of ownership. Single wafer heater assemblies can provide the improved process performance required for high aspect ratio processes and can be used for ultra-thin junction formation, silicideization, oxide growth, BPSG densification and metal annealing.

In order to translate the substrate 145 vertically to approach and away from the top surface and the transfer plane of the substrate holder in the processing system, the substrate holder 200 is a lift capable of raising and lowering three or more lift pins. It may further include a pin assembly (not shown).

The temperature of the temperature controlled substrate holder 200 may be monitored using a temperature-sensing device (not shown), such as a thermocouple (eg, K-type thermocouple, Pt sensor, etc.). The controller can also control the temperature of the substrate holder using the temperature measurement as feedback to the substrate holder. For example, the temperature of the substrate holder may be changed by adjusting at least one of fluid flow rate, fluid temperature, heat transfer gas type, heat transfer gas pressure, clamping force, current and / or voltage of the heater element, current or polarity of the thermoelectric element, and the like. .

An optical monitoring system (not shown) may allow monitoring of optical radiation from the processing space. For example, a photo diode, photomultiplier tube, CCD, CID, or other solid state detector can be used. However, other optical devices capable of analyzing optical radiation can also be used. The monitoring system can provide information to the controller to adjust chamber conditions such as wafer temperature before, during, or after processing. In a variant, the optical monitoring system can also include a light source, such as a laser.

In addition, an optical monitoring system can be used to monitor the efficiency of the heating unit. For example, the optical monitoring system can operate in a frequency band that includes the wavelength of the carbon fiber heater element. In addition, an optical monitoring system can be used to monitor the substrate holder cleaning process. For example, if the optical radiation is large and stable during the cleaning process, a clean substrate holder can be detected.

According to the present invention it is possible to increase the operating temperature range, so that the temperature gradient appears faster than the conventional heater system. This benefit is more evident at high temperatures (> 250 ° C.) and the heating element can operate at high temperatures on the order of 950-1000 ° C.

3A-3C are exemplary schematic diagrams of a heater unit according to an embodiment of the present invention. In the illustrated embodiment, the circular heater unit 300A is shown having a circular center segment 310 and a plurality of annular ring segments 320, 330, 340, 350 and 360. Six segments are shown in FIG. 3A, but this is not essential to the invention. The heater unit may comprise various numbers of segments, which segments may take a variety of shapes. For example, the annular ring can have different thicknesses. In the illustrated embodiment, each segment of the heating unit includes heating elements 315, 325, 335, 345, 355 and 365, and each heating element can be controlled independently.

In FIG. 3B, the circular heater unit 300B is shown having a circular center segment and a plurality of annular ring 90 ° segments (A, B, C and D segments). In the illustrated embodiment, although the thickness of the segments is shown to be the same, this is not essential to the present invention. The heater unit may comprise various numbers of segments, which segments may take various shapes. In the illustrated embodiment, each segment includes independently controllable heating elements.

In FIG. 3C, the circular heater unit 300C is shown having a circular center segment and a plurality of annular ring 45 ° segments A1, A2, B1, B2, C1, C2, D1 and D2 segments. In the illustrated embodiment, although the thickness of the segments is shown to be the same, this is not essential to the present invention. The heater unit may comprise various numbers of segments, and these segments may take various shapes. In the illustrated embodiment, each segment includes independently controllable heating elements.

Alternatively, it is not necessary to provide a heating element for each segment of the heating unit shown in FIGS. 3A-3C. In other embodiments, isolation elements (not shown) may be provided to isolate these segments from each other.

In one embodiment, one or more temperature sensors (not shown) may be disposed in one or more segments of the heating unit shown in FIGS. 3A-3C. Alternatively, temperature can be measured using optical techniques.

4 is a schematic diagram of another heater unit according to an embodiment of the present invention. In the illustrated embodiment, the square heater unit 400 is shown having a plurality of square segments 410. Although 25 segments are shown in FIG. 4, this is not essential to the invention. The heater unit 400 may include various numbers of segments, and these segments may take various shapes. For example, it may take the shape of a rectangle. In the illustrated embodiment, each segment of the heater unit includes a heating element 420, and each heating element can be controlled independently. In one embodiment, one or more temperature sensors (not shown) may be disposed in one or more segments of the heating unit shown in FIG. 4. Alternatively, temperature can be measured using optical techniques. In addition, it is not necessary to provide a heating element for each segment of the heating unit shown in FIG. In other embodiments, isolation elements (not shown) may be provided to isolate these segments from each other.

5 is a simplified diagram of a heating unit according to one embodiment of the invention. In the illustrated embodiment, the heating unit 500 includes a heating element 510, transition elements 512A and 512B, a sealing end 519, and connecting terminals 517A and 517B.

The heating element 510 may comprise a circular tube 511, in which a carbon wire heater 515 comprising carbon fiber bundles may be sealed. The end of the circular tube 511 may be connected to the transition elements 512A and 512B. In one embodiment, the carbon wire heater 515 is housed in a circular tube 511 and the transition elements 512A and 512B do not receive the heater. For example, this makes it possible to more efficiently control the radiation from the heater. In a variation, portions of one or more transition elements 512A and 512B may comprise portions of a heater.

In one embodiment, the circular tube 511 and the transition elements 512A and 512B may be formed of a single member (fragment) made of a material such as quartz glass or the like. In other embodiments, the circular tube 511 and the transition elements 512A and 512B may be formed of separate members made of certain materials and may be fused during the manufacturing process. Alternatively, it is not necessary to provide the transition elements 512A and 512B, it is possible to seal the round tube 511 and to provide connection terminals at the ends of the round tube during the manufacturing process.

In addition, the sealing distal end 519 may be connected to the ends of the transition elements 512A and 512B. The sealing distal end 519 may include means for sealing the ends of the transition elements 512A and 512B. For example, a bifurcated cap can be used as the sealing means. In addition, pinch seals can be used. It is also possible to use some of the staged stages which may include various glass materials.

The carbon wire heater 515 may be inserted into the circular tube 511 and may extend between the end point elements 513A and 513B. In addition, the end point elements 513A and 513B may include a compressed wire carbon member 516 as shown in FIGS. 6A and 6B. The carbon wire heater 515 may be embedded in the compressed wire carbon member 516 in a compressed state as shown in FIGS. 6A and 6B. Wire carbon member 516 and carbon wire heater 515 may be housed so as to extend substantially parallel to the axis within terminal point elements 513A and 513B.

Although shown in FIG. 5 as being circular, this is not essential to the invention. Alternatively, various shapes may be used, such as substantially elliptical shapes, substantially square shapes, substantially rectangular shapes, and the like. In one embodiment, the round tube may comprise a quartz glass material. In a variant, other materials may be used.

For example, the carbon wire heater 515 may include a carbon wire that can be manufactured by tying a bundle of 300 to 350 carbon fibers having a diameter of 5 to 15 μm in a bundle. Thereafter, the plurality (about 9) of the bundles are woven from carbon wire in the form of a knit cord (i.e., twisted string) having a diameter of 2 mm and used as a carbon wire.

The carbon wire heater 515 and the wire carbon member 516 may comprise 300 to 350 carbon fibers, each about 7 microns in diameter, which are bundled into one fiber bundle, and the nine fibers described above. The bundle is woven with a knit cord 2 mm in diameter (ie twisted string). Here, the knit cord has an electrical resistance of 10 ohms / meter at approximately room temperature, and an electrical resistance of 5 ohms / meter at a temperature of about 1000 ° C. In addition, the electrical resistance of the five bundled carbon fibers is approximately 2 ohms / meter at room temperature and 1 ohms / meter at about 1000 ° C. As a result, the heat generated by the wire carbon member 516 is much smaller than the heat generated by the carbon wire heater 515.

In the carbon wire, the woven width of the carbon wire may be approximately 2 to 5 mm, and the surface fluff 518 (see FIG. 7) of the carbon wire may be formed at a height of approximately 0.5 to 2.5 mm. For example, the surface fluff may be a portion of broken carbon fiber that protrudes from the outer surface of the carbon wire as shown in FIG. 7. The carbon wire heater can be configured such that the lint is in contact with the inner wall of the circular tube but not the body of the carbon wire heater. In this way, the reaction of the quartz glass (SiO ₂ ) and the carbon (C) contained in the carbon wire heater is minimized at high temperatures, thereby reducing the deterioration of the quartz glass and the deterioration of the durability of the carbon wire.

In order to implement this configuration, the inner diameter of the round tube may be selected according to the diameter and number of carbon fibers in the carbon wire heater. In addition, the amount (ash content) of impurities in the carbon fiber and carbon wire heater is less than 10 ppm. Alternatively, the ash content is less than 3 ppm.

The wire carbon member 516 is interposed between the carbon wire heater 515 and the inner connection lines 514A and 514B to minimize heat that can be transferred from the carbon wire heater 515 to the inner connection lines 514A and 514B. As a result, deterioration due to the high temperature of the sealing end portion 519 can be prevented.

As in the case of the carbon wire heater 515, the reaction of the carbon (C) of the wire carbon member 516 and the quartz glass (SiO ₂ ) at a high temperature is minimized to prevent deterioration of the quartz glass and deterioration of durability of the carbon wire. .

Internal connection lines 514A and 514B may be disposed in the glass tube that forms part of the transition elements 512A and 512B. Internal connection lines 514A and 514B may be connected to end point elements 513A and 513B as shown in FIGS. 6A and 6B. For example, internal connection lines 514A and 514B may be compressed within end point elements 513A and 513B. In addition, internal connection lines 514A and 514B may be connected to the sealing distal end 519.

External connection lines 517A and 517B can be used to connect heating elements to a power source (not shown). The sealing end can comprise means for connecting the inner connection line to the outer connection line. For example, molybdenum (Mo) foil (not shown) may be used to connect internal connection lines 514A and 514B to external connection lines 517A and 517B. The sealing end 519 may also include one or more plug members (not shown) that close the ends of the quartz glass tubes.

In a variant, additional glass tubes (not shown) having a diameter larger than the circular tube 511 may be provided, such that the circular tube 511 may be inserted into a large diameter quartz glass tube, and these tubes may be fused or welded. Can be integrated by means.

The inner connection lines 514A and 514B and the outer connection lines 517A and 517B may comprise molybdenum (Mo) or tungsten (W) rods having a diameter of 1 to 3 mm.

The diameters of the inner connection lines 514A and 514B and the outer connection lines 517A and 517B may be selected as needed, but if the diameter is too small, the electrical resistance may be large, which is undesirable. On the other hand, if the diameter is too large, it is not preferable because the size of the terminal becomes larger.

In order to ensure easy connection to the carbon wires of the inner connection lines 514A and 514B (that is, the wire carbon member 516 compressed in the circular tube 511), the ends of the inner connection lines 514A and 514B are connected. It can be formed sharply.

The sealing end portion 519 may further include cement containing finely divided alumina (Al ₂ O ₃ ) or finely divided SiO ₂ .

In one embodiment, the procedure for manufacturing the circular heating unit includes the steps of making a circular tube 511 comprising transition elements 512A and 512B, and assembling the carbon wire heating element 510 within the circular tube 511. Assembling the end point elements to the transition elements 512A and 512B, connecting the end point elements to both ends of the carbon wire heating element 510, and the internal connection lines 514A and 514B Assembling a sealing end 519 connecting the connecting lines 517A and 517B, and lowering the internal pressure of the heater to 1 Torr or less prior to sealing.

6A is a longitudinal cross-sectional view of an end point element for connecting a carbon wire heater and a connection line according to an embodiment of the present invention, and FIG. 6B is a side cross-sectional view of the end point element according to an embodiment of the present invention.

In the illustrated embodiment, end point elements 513A and 513B are shown. The end point element is used to connect the carbon wire heater 515 and the connection lines 514A, 514B to the plurality of wire carbon members 516 in a compressed state. The end point element is used to electrically connect the carbon wire heater and the connection line through the plurality of wire carbon members. This configuration provides good electrical connection over a wide temperature range. The plurality of wire carbon members also helps to reduce the effect of oxidation on the conductive wires.

7 is a plan view of a carbon wire heater according to an embodiment of the present invention. In the illustrated embodiment, a plurality of carbon fiber bundles are bundled to form carbon wire heaters 515 and 516, wherein the extra fine carbon fibers are bundled in a manner such as knit cord or braid. Carbon wire heaters have lower heat capacity, better temperature characteristics, and better durability at high temperatures than conventional heating elements made of metal or SiC. Further, since a plurality of single bundles of fine carbon fibers are bundled to form a carbon wire heater, the carbon wire heater is superior in flexibility, flexibility in shape deformation, and workability as compared with a heating element made of a solid carbon material.

For example, ten bundles each containing approximately 3000 to 3500 carbon fibers of 7 microns in diameter may be bundled to form a carbon wire heater. Carbon fibers can be bundled in the same way as knit cords or braids. The bundle width of the carbon wire may be approximately 2 to 5 mm. In addition, a knit cord or a braided carbon wire heater has a carbon fiber fluff on its surface. The fluff may be part of the cut carbon fiber (single fiber) that protrudes from the outer circumferential surface of the carbon wire. Lint formation due to carbon fibers is approximately 0.5 to 2.5 mm.

When the carbon wire heater is inserted, only the fluff 518 contacts the inner wall of the quartz glass tube or groove, and the body of the carbon wire heater does not contact the inner wall. In this way, the reaction of quartz glass (SiO ₂ ) with carbon (C) of the carbon wire heater at high temperatures can be reduced and / or eliminated. In addition, deterioration of the quartz glass and deterioration of the carbon wire durability can be reduced and / or eliminated.

The carbon fiber is of high purity in terms of heating uniformity, durability, stability and contamination. In addition, in the carbon fiber and carbon wire heater, the amount of ash (ash content) is less than 10 ppm. In a modification, the ash content in the carbon fiber is 3 ppm or less.

Wire carbon member 516 may comprise a material that is substantially the same or at least similar to that of carbon wire heater 515. For example, the wire carbon member may be in the form of a knit cord or twisted string, the diameter of the carbon fiber, the number of carbon fibers bundled, the number of carbon fiber bundles, the weaving method, the weaving width, the fluff formation, The material and ash content (less than 10 ppm) are almost the same as the carbon wire heater. Thus, the number of wire carbon members accommodated in the terminal point elements 513A and 513B is equal to or greater than the number of carbon wire heaters 515. In one embodiment, five or more wire carbon members 516 may be provided per carbon wire heater 515.

8 is a simplified diagram of a multi-zone heating unit in accordance with one embodiment of the present invention. In the illustrated embodiment, the heating unit 800 includes four heating elements 810, 820, 830 and 840, transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A and 842B, and sealed ends 819, 829, 839, and 849, and connection terminals 817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B.

The heating elements 810, 820, 830, and 840 can include curved tubes 811, 821, 831, and 841, which include carbon wire heaters 815, 825, 835 that include carbon fiber bundles. And 845 may be enclosed. The ends of curved tubes 811, 821, 831 and 841 may be connected to transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A and 842B. In one embodiment, carbon wire heaters 815, 825, 835, and 845 are mounted in curved tubes 811, 821, 831, and 841, and transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A and 842B do not receive carbon wire heaters. For example, this configuration makes it possible to more efficiently control radiation from the carbon wire heater. In a variation, one or more of the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B may comprise a portion of a heater.

In one embodiment, the curved tubes 811, 821, 831 and 841 and the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A and 842B are formed from a single member made of a material such as quartz glass or the like. Can be. In another embodiment, the curved tubes 811, 821, 831, and 841 and the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B may be formed from separate members of any material and , During the manufacturing process. Alternatively, there is no need to provide a transition element, sealing the curved tubes 811, 821, 831 and 841, and connecting terminals at the ends of the curved tube during the manufacturing process.

In addition, the sealing distal ends 819, 829, 839 and 849 may be connected to the ends of the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A and 842B. Sealing distal ends 819, 829, 839, and 849 may include means for sealing the ends of the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B. For example, a bifurcated cap can be used as the sealing means. In addition, pinch seals can be used. It is also possible to use stepped seals which may comprise various glass materials.

Carbon wire heaters 815, 825, 835 and 845 can be inserted into curved tubes 811, 821, 831 and 841, and end point elements 813A, 813B, 823A, 823B, 833A, 833B, 843A and 843B ) May extend between. In addition, the end point elements 813A, 813B, 823A, 823B, 833A, 833B, 843A, and 843B may include a compressed wire carbon member 516 as shown in FIGS. 6A and 6B. The carbon wire heater 515 may be embedded in the compressed wire carbon member 516 that is also in a compressed state, as shown in FIGS. 6A and 6B. The wire carbon member 516 and the carbon wire heater 515 are housed so as to extend substantially parallel to the axis of the end point element inside the end point element.

Although four curved portions are shown as substantially circular in FIG. 8, this is not essential to the present invention. Alternatively, various shapes may be used, such as substantially elliptical shapes, substantially square shapes, substantially rectangular shapes, and the like. In one embodiment, the curved tube may comprise a quartz glass material. In a variant, other materials may be used.

For example, the carbon wire heaters 815, 825, 835, and 845 may include carbon wire that can be manufactured by bundleing 300 to 350 carbon fibers, each having a diameter of 5 to 15 μm in a bundle. Thereafter, the plurality (about 9) of the bundles are woven from carbon wire in the form of a knit cord (i.e., twisted string) having a diameter of 2 mm and used as a carbon wire.

The carbon wire heater and the wire carbon member may comprise 300 to 350 carbon fibers, each about 7 microns in diameter, wherein the carbon fibers are bundled into one fiber bundle, and the nine fiber bundles are 2 mm in diameter. It is woven with an in-knit cord (ie twisted string). Here, the knit cord has an electrical resistance of 10 ohms / meter at approximately room temperature, and an electrical resistance of 5 ohms / meter at a temperature of about 1000 ° C. In addition, the electrical resistance of the five bundled carbon fibers is approximately 2 ohms / meter at room temperature and 1 ohms / meter at about 1000 ° C. As a result, the heat generated by the wire carbon member 516 is much smaller than the heat generated by the carbon wire heater 515.

In the carbon wire, the woven width of the carbon wire may be approximately 2 to 5 mm, and the surface fluff 518 (see FIG. 7) of the carbon wire may be formed at a height of approximately 0.5 to 2.5 mm. For example, the surface fluff may be a portion of broken carbon fiber that protrudes from the outer surface of the carbon wire as shown in FIG. 7. The carbon wire heater can be configured such that fluff contacts the inner wall of the curved tube but not the body of the carbon wire heater. In this way, the reaction of the quartz glass (SiO ₂ ) and the carbon (C) contained in the carbon wire heater is minimized at high temperatures, thereby reducing the deterioration of the quartz glass and the deterioration of the durability of the carbon wire.

To realize this configuration, the inner diameter of the curved tube can be selected according to the diameter and number of carbon fibers in the carbon wire heater. In addition, the amount (ash content) of impurities in the carbon fiber and carbon wire heater is less than 10 ppm. Alternatively, the ash content is less than 3 ppm.

Internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A, and 844B can be disposed in glass tubes that form part of the transition elements 812A, 812B, 822A, 822B, 832A, 832B, 842A, and 842B. have. Internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A and 844B are shown as end point elements 813A, 813B, 823A, 823B, 833A, 833B, 843A and 843B as shown in FIGS. 6A and 6B. ) Can be connected. For example, internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A, and 844B may be compressed within end point elements 813A, 813B, 823A, 823B, 833A, 833B, 843A, and 843B.

As shown, internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A, and 844B can be connected to sealing ends 819, 829, 839, and 849. In addition, external connection lines 817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B may be connected to sealing ends 819, 829, 839, and 849. The sealing end can comprise means for connecting the inner connection line to the outer connection line. For example, using molybdenum (Mo) foil (not shown), internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A and 844B can be connected to external connection lines 817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B). In addition, the sealing distal ends 819, 829, 839 and 849 may include one or more plug members (not shown) that close the ends of the tube. For example, the sealing end portion may further include cement containing finely divided alumina (Al ₂ O ₃ ) or finely divided SiO ₂ .

External connection lines 817A, 817B, 827A, 827B, 837A, 837B, 847A, and 847B can be used to connect heating elements 810, 820, 830, and 840 to one or more power sources (not shown). The heating elements 810, 820, 830 and 840 can be controlled independently.

In a variant, an additional glass tube (not shown) having a diameter larger than that shown in FIG. 8 (small diameter tube) can be provided, so that the small diameter tube can be inserted into a large diameter tube, and these tubes It can be integrated by fusion or welding means.

The internal connection lines 814A, 814B, 824A, 824B, 834A, 834B, 844A and 844B and the external connection lines 817A, 817B, 827A, 827B, 837A, 837B, 847A and 847B have molybdenum diameters of 1 to 3 mm. (Mo) or tungsten (W) rods. The diameters of the inner and outer connecting lines can be selected as needed, but too small of the diameter can result in large electrical resistance, which is undesirable. On the other hand, if the diameter is too large, it is not preferable because the size of the terminal becomes larger.

In one embodiment, the procedure for manufacturing a curved heater segment includes the steps of making a curved tube comprising a transition element, assembling a carbon wire heating element within the curved tube, and attaching the end point element to the transition element. Assembling, connecting end point elements at both ends of the carbon wire heater, assembling the sealing end connecting the inner and outer connecting lines, and internal pressure of the curved heater segment prior to sealing. It may include lowering below the Torr.

9 is a simplified diagram of a heating assembly in accordance with one embodiment of the present invention. In the embodiment shown, the heating assembly 900 includes three heating units 910, 920, and 930 and a holding device 950. Three heating units are shown, but this is not necessary for the present invention. In a variant, different numbers of heating units can be used, different configurations can be used, and the heating units can take different shapes.

Each heating unit 910, 920, and 930 may comprise a round quartz glass tube, in which a carbon wire heater comprising a carbon fiber bundle may be enclosed as described above. The end of the round quartz glass tube can be connected to the transition element. In one embodiment, the carbon wire heater is housed in a curved quartz glass tube and the transition element does not receive the carbon wire heater. For example, this configuration makes it possible to more efficiently control radiation from the carbon wire heater. In a variant, one or more portions of the transition elements may comprise a portion of a heater.

In FIG. 9, the heating units 910, 920, and 930 may be mounted in recesses or grooves in the retaining device 950. In a variant, the heating units 910, 920, and 930 can include multi-zone elements as shown in FIG. 8.

10A-10C are simplified diagrams of another heating assembly in accordance with one embodiment of the present invention. In the embodiment shown, the heating assembly 1000 includes three heating elements 1010, 1020, and 1030, a retaining device 1050, and a cover 1070. Three heating elements are shown, but this is not necessary for the present invention. In a variant, different numbers of heating units can be used, different configurations can be used, and the heating units can take different shapes.

The cover 1070 may comprise a first quartz glass plate and the retaining device 1050 may comprise a second quartz glass plate having circular recesses or grooves 1011, 1021 and 1031. The set may be arranged with a carbon wire heater. In one embodiment, by fusing cover 1070 and retaining device 1050 with respect to each other, carbon wire heaters 1012, 1022 and 1032 may be enclosed in the integrating member as shown in FIG. 10C.

In addition, the heating unit 1000 includes transition elements 1012A, 1012B, 1022A, 1022B, 1032A and 1032B, sealing end portions 1019, 1029 and 1039, and connecting terminals 1017A, 1017B, 1027A, 1027B, 1037A and 1037B. More).

Heating elements 1010, 1020, and 1030 may include curved recesses or grooves 1011, 1021, and 1031 within retaining device 1050, and within these recesses a carbon wire heater comprising a carbon fiber bundle ( 1015, 1025 and 1035 may be enclosed. The ends of the curved grooves 1011, 1021 and 1031 may be connected to the transition elements 1012A, 1012B, 1022A, 1022B, 1032A and 1032B. In one embodiment, the carbon wire heaters 1015, 1025, and 1035 are mounted in curved grooves 1011, 1021, and 1031, and the transition elements 1012A, 1012B, 1022A, 1022B, 1032A, and 1032B are carbon wire heaters. Does not accept. For example, this configuration makes it possible to more efficiently control radiation from the carbon wire heater. In a variation, one or more portions of the transition elements 1012A, 1012B, 1022A, 1022B, 1032A, and 1032B may comprise a portion of a heater.

In the carbon wire, the woven width of the carbon wire may be approximately 2 to 5 mm, and the surface fluff 518 (see FIG. 7) of the carbon wire may be formed at a height of approximately 0.5 to 2.5 mm. For example, the surface fluff may be a portion of broken carbon fiber that protrudes from the outer surface of the carbon wire as shown in FIG. 7. The carbon wire heater can be configured so that the lining of the curved tube contacts the body of the carbon wire heater but not the lint. In this way, the reaction of the quartz glass (SiO ₂ ) and the carbon (C) contained in the carbon wire heater is minimized at high temperatures, thereby reducing the deterioration of the quartz glass and the deterioration of the durability of the carbon wire.

To realize this configuration, the inner diameter of the curved recess or groove may be selected according to the diameter and number of carbon fibers in the carbon wire heater. In addition, the amount (ash content) of impurities in the carbon fiber and carbon wire heater is less than 10 ppm. Alternatively, the ash content is less than 3 ppm.

In addition, the sealing distal ends 1019, 1029 and 1039 may be connected to the ends of the transition elements 1012A, 1012B, 1022A, 1022B, 1032A and 1032B. Sealing distal ends 1019, 1029, and 1039 may include means for sealing the ends of the transition elements 1012A, 1012B, 1022A, 1022B, 1032A, and 1032B. For example, a bifurcated cap can be used as the sealing means. In addition, pinch seals can be used. It is also possible to use stepped seals which may comprise various glass materials.

Carbon wire heaters 1015, 1025, and 1035 can be inserted into curved recesses or grooves 1011, 1021, and 1031 and extend between end point elements 1013A, 1013B, 1023A, 1023B, 1033A, and 1033B. Can be. In addition, the end point elements 1013A, 1013B, 1023A, 1023B, 1033A, and 1033B may include a compressed wire carbon member 516 as shown in FIGS. 6A and 6B. The carbon wire heater may be embedded in the compressed wire carbon member in the compressed state as shown in FIGS. 6A and 6B. The wire carbon member and the carbon wire heater may be housed so as to extend substantially parallel to the axis of the end point element inside the end point element.

In the illustrated embodiment, a prototype is shown, but this is not essential to the invention. Alternatively, various shapes may be used, such as substantially elliptical shapes, substantially square shapes, substantially rectangular shapes, and the like. In one embodiment, the tube may comprise a quartz glass material. In a variant, other materials may be used.

For example, the carbon wire heaters 1015, 1025, and 1035 may include carbon wires that can be manufactured by bundleing 300 to 350 carbon fibers having a diameter of 5 to 15 μm in a bundle. Thereafter, the plurality (about 9) of the bundles are woven from carbon wire in the form of a knit cord (i.e., twisted string) having a diameter of 2 mm and used as a carbon wire. Carbon wire heaters 1015, 1025, and 1035 may be disposed in a circular shape within retaining device 1050. However, the arrangement of the wire heaters can be freely changed and is not limited to the above.

For example, a heating unit is prepared by disposing a carbon wire heater in the recess or groove and fusing the joining surfaces of the cover 1070 and the holding device 1050 after the recess or groove is made in a non-oxidizing atmosphere. can do. The carbon wire heaters each comprise about 350 carbon fibers, each having a diameter of 5 to 15 μm and configured in the form of fiber bundles, wherein the 9 fiber bundles are woven in the form of knit cords or braids having a diameter of 2 mm. Carbon fibers with a diameter of less than 5 microns do not have sufficient strength to withstand the weaving process of making a preferred elongate heater. In addition, the carbon fiber may be too fine to obtain desirable resistance, and in other cases, the fiber may be impractically used by using too many fiber strings. In addition, carbon fibers larger than 15 microns in diameter may lack elasticity, and are not only difficult to weave when the carbon fibers are bundled into a plurality of bundles, but the bundled fibers may also lack the strength of some of them.

In addition, the surface fluff of the carbon fibers may be formed at a height of approximately 0.5 to 2.5 mm. The surface fluff may be part of a broken carbon wire that projects from the outer surface. The carbon wire heater is connected to the holding device by fluff, so that a small heating unit excellent in surface uniformity heating and suitable for semiconductor manufacturing is obtained.

In a variation, the carbon wire heaters may comprise 100 to 800 carbon fibers each 5 to 15 microns in diameter and woven into bundles. Three or more of the bundles may be woven into a longitudinal shape, such as a wire or tape. The carbon wire heater may have an electrical resistance of 1 to 20 ohms / meter at operating temperature.

The end point elements 1013A, 1013B, 1023A, 1023B, 1033A, and 1033B may be disposed in small diameter round quartz glass tubes that form part of the transition elements 1012A, 1012B, 1022A, 1022B, 1032A, and 1032B. The end point elements 1013A, 1013B, 1023A, 1023B, 1033A, and 1033B may comprise compressed wire carbon members as shown in FIGS. 6A and 6B. The carbon wire heater can be inserted into the recess or groove of the holding device and can extend between the end point elements. Also, the carbon wire heater may be embedded in the compressed wire carbon member in a compressed state as shown in FIGS. 6A and 6B.

Internal connection lines 1014A, 1014B, 1024A, 1024B, 1034A, and 1034B may be disposed in small diameter quartz glass tubes that form part of the transition elements 1012A, 1012B, 1022A, 1022B, 1032A, and 1032B. Internal connection lines 1014A, 1014B, 1024A, 1024B, 1034A and 1034B may be connected to end point elements 1013A, 1013B, 1023A, 1023B, 1033A and 1033B, respectively, as shown in FIGS. 6A and 6B. For example, internal connection lines 1014A, 1014B, 1024A, 1024B, 1034A and 1034B may be compressed within end point elements 1013A, 1013B, 1023A, 1023B, 1033A and 1033B.

As shown, internal connection lines 1014A, 1014B, 1024A, 1024B, 1034A and 1034B may be connected to the sealing distal ends 1019, 1029 and 1039. In addition, external connection lines 1017A, 1017B, 1027A, 1027B, 1037A and 1037B may be connected to the sealing distal ends 1019, 1029 and 1039. The sealing end can comprise means for connecting the inner connection line to the outer connection line. For example, using molybdenum (Mo) foil (not shown), the internal connection lines 1014A, 1014B, 1024A, 1024B, 1034A and 1034B can be connected to the external connection lines 1017A, 1017B, 1027A, 1027B, 1037A and 1037B. Can be. In addition, the sealing distal ends 1019, 1029 and 1039 may include one or more plug members (not shown) that close the ends of the tube. For example, the sealing end portion may further include cement containing finely divided alumina (Al ₂ O ₃ ) or finely divided SiO ₂ .

External connection lines 1017A, 1017B, 1027A, 1027B, 1037A and 1037B can be used to connect heating elements 1010, 1020 and 1030 to one or more power sources (not shown). The heating elements 1010, 1020 and 1030 can be controlled independently.

The end point elements 1013A, 1013B, 1023A, 1023B, 1033A and 1033B are shown to partially fill a small diameter quartz glass tube, but this is not essential to the present invention. In a variant, the end point element may take different sizes and positions. The end point element can also be disposed in a recess or groove.

In a variant, one or more small diameter quartz glass tubes may be excluded. For example, the sealing distal end 1019 may be connected to the bottom of the holding device 1050 and the terminal line from the carbon wire heater is drawn vertically to the heater face of the floor through an opening (not shown) formed in the holding device 1050. Can be. The sealing distal end 1019 may comprise means for connecting the terminal line to an external connection line.

Further, the sealed end portion may include means for introducing nitrogen gas to prevent the carbon wire heater from being oxidized, and means for reducing the internal pressure of the heater and the sealed end portion.

Although molybdenum (Mo) foils are used for conductive applications, if molybdenum (Mo) foils are preferred in terms of elasticity, other materials such as tungsten (W) foils and the like may be used instead.

In order to prevent cracking during drying, a resin or cement (using fine SiO ₂ or Al ₂ O ₃ ) can be used as the plug member.

In a variant, the heating elements 1010, 1020 and 1030 may comprise multi-zone segments as shown in FIG. 8.

A plurality of bundles each composed of ultrafine carbon fibers can be knitted to produce a carbon wire heater. Carbon wire heaters have a lower heating capacity and a faster rate of temperature change than conventional metal heating elements. Carbon wire heaters are excellent in durability at high temperatures. Since the carbon wire heater is manufactured by knitting a plurality of bundles each composed of fine carbon fibers, it is excellent in flexibility and can be easily processed into various shapes such as heating units for semiconductor manufacturing.

11A is a simplified block diagram of a single wafer heater assembly in accordance with one embodiment of the present invention. In the illustrated embodiment, the single wafer heater assembly 1100A is shown to include two heating assemblies 1110 and 1120, but this is not essential to the present invention. In other embodiments, other configurations may be used. For example, embodiments of circular, non-circular, planar, non-planar applications are contemplated.

In FIG. 11A, a first heating assembly 1110 consisting of one or more heating elements with one or more carbon wire heaters is shown below the substrate 1130. The bottom heating assembly 1110 may include a quartz retainer, and one or more heating elements having one or more carbon wire heaters may be assembled to the quartz retainer. For example, the heating assembly 1110 may be configured to use at least one of a single segment heating element and a multi segment heating element. The heating assembly 1110 may be part of a substrate holder (not shown).

The second heating assembly 1120, which is also composed of one or more heating elements with one or more carbon wire heaters, is shown above the substrate 1130. Upper heating assembly 1120 may comprise a quartz retainer, and one or more heating elements having one or more carbon wire heaters may be assembled to the quartz retainer. For example, the heating assembly 1120 may be configured to use at least one of a single segment heating element and a multi segment heating element. Heating assembly 1120 may be part of an upper assembly in a processing chamber (not shown). Arrow 1170 indicates the direction of radiant energy emitted from the heating unit. The radiation pattern may differ from one heating element to another, and various radiation (heating) patterns may be provided across the top and bottom surfaces of the wafer.

The use of one or more heating assemblies allows for heating the substrate 1130 faster and more uniformly. Wafer holder 1140 may be used to position and hold a substrate between the two heating assemblies. Alternatively, the substrate may be disposed on the lower heating assembly 1110.

Controller 1150A may be connected to and used to control lower heating assembly 1110, upper heating assembly 1120 and wafer holder 1140. The wafer holder 1140 may be configured to minimize and / or eliminate shading at the bottom of the substrate. The controller 1150A can be used to position the substrate and provide power independently to each of the carbon wire heaters in the upper and lower heating assemblies. Alternatively, upper heating assembly 1110, lower heating assembly 1120, and / or wafer holder 1140 may include one or more temperature sensors (not shown), which are also connected to a controller, It can be used to control the temperature of the upper heating assembly, the lower heating assembly, and / or the substrate.

Controller 1150A may provide a time-varying power level to one or more carbon wire heaters in the heating assembly. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

11B is a simplified block diagram of a multi-wafer heater assembly in accordance with an embodiment of the present invention. In the illustrated embodiment, the multi-wafer heater assembly 1100B is shown to include three heating assemblies 1151, 1152 and 1153, but this is not essential to the present invention. In other embodiments, different numbers of heating assemblies may be used, different numbers of heating sites may be used, and other structures may be taken. For example, embodiments of circular, non-circular, planar, non-planar applications are contemplated. Arrow 1170 indicates the direction of radiant energy emitted from the heating unit.

Heating assemblies 1151, 1152 and 1153 may include one or more heating elements having one or more carbon wire heaters. Heating assemblies 1151, 1152, and 1153 may include a quartz retainer, and one or more heating elements having one or more carbon wire heaters may be assembled to the quartz retainer. For example, the heating assemblies 1151, 1152, and 1153 may be configured to use at least one of a single segment heating element and a multi segment heating element. One or more heating assemblies may include a substrate holder.

In the illustrated embodiment, two wafers 1130A and 1130B are shown, but this is not essential to the present invention. In other embodiments, different numbers of wafers may be used and other structures may be employed. Separate wafer holders 1140A and 1140B can be used to position and hold the substrate separately between the two heating assemblies. Alternatively, the substrate may be disposed on the heating assembly.

Using a multi-wafer heater assembly can increase throughput. According to the multi-wafer heater assembly, the plurality of substrates 1130A and 1130B can be heated faster and more uniformly.

Controller 1150B may be connected to and used to control heating assemblies 1151, 1152 and 1153 and wafer holders 1140A and 1140B. The wafer holders 1140A and 1140B can be configured to minimize and / or eliminate shading at the bottom of the substrate. The controller 1150B can be used to position the substrate and independently provide power to each of the carbon wire heaters in the heating assemblies 1151, 1152 and 1153. A temperature sensor may also be connected to the controller and used to control the temperature of the heating assemblies 1151, 1152 and 1153 and the substrate.

Controller 1150B may provide a time varying power level to one or more carbon wire heaters in the heating assembly. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

12 is a simplified block diagram of a single wafer heater assembly according to another embodiment of the present invention. In the illustrated embodiment, a single heating assembly 1210 is shown to include one or more heating elements 1212 having one or more carbon wire heaters. Also shown is wafer 1230, wafer holder 1240 and controller 1250, but this is not essential to the present invention. In other embodiments, other structures may be taken. For example, additional heating assemblies can be used. Alternatively, the wafer holder can hold one or more wafers.

The controller 1250 can be connected to the heating assembly 1210 to control the heating assembly. In addition, a temperature sensor (not shown) may be connected to the controller and used to control the temperature of the heating assembly 1210.

The controller 1250 can provide a time varying power level to one or more heating elements 1212 (carbon wire heaters) in the heating assembly 1210. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

Heating assembly 1210 may include a holding device, which may be assembled with one or more heating elements 1212 having one or more carbon wire heaters. The holding device may comprise quartz.

Wafer holder 1240 may include a non-metallic material such as quartz or silicon carbide. The wafer holder 1240 is shown having three support points, but this is not essential to the present invention. In a variant, different numbers of supports may be used, and the supports may be configured differently. For example, embodiments relating to non-circular applications are contemplated.

The controller 1250 may be connected to the wafer holder 1240 to control the wafer holder. The wafer holder 1240 may be configured to minimize and / or eliminate shading at the bottom of the substrate. Wafer holder 1240 may be configured to be used to move and / or position a substrate. For example, wafer holder 1240 may be configured to provide at least one of vertical, horizontal and rotational motion of the substrate / wafer. Alternatively, wafer holder 1240 may include one or more temperature sensors (not shown), which may also be connected to a controller and used to control the temperature of the substrate.

13 is a simplified block diagram of another embodiment of a single wafer heater assembly in accordance with the present invention. In the illustrated embodiment, the single heating assembly 1310 is shown to include one or more heating elements 1312 with one or more carbon wire heaters, and a plurality of wafer holding elements 1320. Also shown is wafer 1330, substrate positioner 1340 and controller 1350, but this is not essential to the present invention. Other embodiments may take other structures. For example, additional heating assemblies and / or retention assemblies can be used.

The heating assembly 1310 may include a quartz retainer, and one or more heating elements with one or more carbon wire heaters may be assembled to the quartz retainer.

Single heating assembly 1310 may comprise a non-metallic material such as quartz or silicon carbide. The heating assembly 1310 is shown having three wafer holding elements 1320, but this is not essential to the present invention. In a variant, different numbers of wafer holding elements 1320 can be used, and wafer holding elements 1320 can be configured differently. For example, an embodiment regarding a wafer holding element 1320 having curved and / or straight portions is contemplated. Alternatively, the heating assembly 1310 and / or wafer holding element 1320 may include one or more temperature sensors (not shown), which may also be connected to a controller and used to control the temperature of the substrate. have.

The controller 1350 can be connected to the heating assembly 1310 to control the heating assembly, wherein the controller 1350 provides time varying power levels to one or more heating elements 1312 (carbon wire heaters) in the heating assembly 1310. Can provide. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

The controller 1350 may be connected to the substrate positioner 1340 to control the substrate positioner. Substrate positioner 1340 may be configured to move and / or position the substrate. For example, the substrate positioner 1340 may be configured to provide at least one of vertical, horizontal, and rotational movement of the substrate / wafer. Alternatively, substrate positioner 1340 can be configured differently.

14 is a simplified block diagram of another embodiment of a single wafer heater assembly in accordance with the present invention.

In the illustrated embodiment, the single wafer heater assembly 1400 is shown to include two heating assemblies 1410 and 1420, but this is not essential to the present invention. In other embodiments, other structures may be used. For example, embodiments of circular, non-circular, planar, non-planar applications are contemplated. 14 shows a side view, a top view and a bottom view.

In FIG. 14, a first heating assembly 1410 consisting of one or more heating elements with one or more carbon wire heaters is shown below the substrate 1430. The bottom side heating assembly 1410 may include a quartz retainer and one or more heating elements 1412 that may be assembled to the quartz retainer and have one or more carbon wire heaters. For example, the heating element 1412 may be configured to use at least one of a single segment heating element and a multi segment heating element. Alternatively, the heating assembly 1410 may include a substrate holding device (not shown).

The second heating assembly 1420, which is made up of one or more heating elements 1422 with one or more carbon wire heaters, is shown above the substrate 1430. Upper heating assembly 1420 may include a quartz retainer, and one or more heating elements having one or more carbon wire heaters may be assembled to the quartz retainer. For example, the heating element 1422 can be configured to use at least one of a single segment heating element and a multi segment heating element. Heating assembly 1420 may be part of an upper assembly in a processing chamber (not shown). Arrow 1470 indicates the direction of radiant energy emitted from the heating unit. The radiation pattern may differ from one heating element to another, and various radiation (heating) patterns may be provided across the top and bottom surfaces of the wafer. The use of one or more heating assemblies allows for faster and more uniform heating of the substrate 1430.

Wafer holder 1440 may be used to position and / or hold a substrate between the two heating assemblies. Alternatively, the substrate may be disposed on the lower heating assembly 1410.

The controller 1450A can be connected to and used to control the lower heating assembly 1410, the upper heating assembly 1420, and the wafer holder 1440. The wafer holder 1440 may be configured to minimize and / or eliminate shading at the bottom of the substrate. The controller 1450 can be used to position the substrate and provide power independently to each of the carbon wire heaters in the upper and lower heating assemblies. Alternatively, upper heating assembly 1410, lower heating assembly 1420, and / or wafer holder 1440 may include one or more temperature sensors (not shown), which are also connected to a controller, It can be used to control the temperature of the upper heating assembly, the lower heating assembly, and / or the substrate.

Controller 1450 can provide time varying power levels to one or more carbon wire heaters in the heating assembly. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

For example, the heating element may comprise one or more carbon wire heaters that may be enclosed in a quartz tube and / or quartz retainer. Each portion is shown with a plurality of linear heating elements, but this is not essential to the invention. In a modification, another structure can be taken. For example, an embodiment of a heating element with curved and / or straight portions is contemplated. In addition, although a circular wafer is shown, this is not essential to the present invention. Alternatively, non-circular wafers and / or substrates may be stored.

15 is a simplified block diagram of another embodiment of a single wafer heater assembly in accordance with the present invention. 15 shows the side and top / bottom surfaces.

In the illustrated embodiment, a single heating assembly 1510 is shown having a plurality of U-shaped heating elements 1520, but this is not essential to the present invention. In other embodiments, other structures may be used. For example, other numbers of heating elements and / or other shapes may be used. The U-shaped heating element may each comprise one or more heating elements with one or more carbon wire heaters. Carbon wire heaters may be enclosed in quartz tubes and / or quartz retainers. In addition, although a circular wafer is shown, this is not essential to the present invention. Alternatively, non-circular wafers and / or substrates may be stored.

By bending the carbon wire heater in a U-shaped structure, the number of heating elements required can be reduced. In some cases, tubular heaters may be cheaper to manufacture and repair than disc-shaped heaters, and may provide better flexibility.

For example, the heating element 1520 may be configured to use at least one of a single segment heating element and a multi segment heating element. The radiation pattern may differ from one heating element to another, and various radiation (heating) patterns may be provided across the top and bottom surfaces of the wafer.

The use of one or more heating assemblies allows for faster and more uniform heating of the substrate 1530. Wafer holder 1540 may be used to place and / or hold a substrate within the U-shaped heating assembly. Alternatively, the substrate may be disposed on the bottom of the heating assembly.

Controller 1550 may be connected to and used to control heating element 1520 and wafer holder 1540. The wafer holder 1540 may be configured to minimize and / or eliminate shading at the bottom of the substrate. The controller 1550 can be used to position the substrate and provide power independently to each of the carbon wire heaters in the heating assembly. Alternatively, the heating element 1520, and / or the wafer holder 1540 may include one or more temperature sensors (not shown), which are also connected to a controller, such that the temperature of the heating assembly and / or substrate It can be used to control.

Controller 1550 may provide time varying power levels to one or more carbon wire heaters in the heating assembly. Such time varying power levels may include step functions, gradient functions, pulse functions, constant functions, modulation functions, or combinations thereof. Low thermal mass of the carbon wire heater and heating assembly allows for rapid temperature changes.

Since the heating elements described herein have high chemical purity and provide very low levels of metal contamination, the carbon wire heaters can be treated without additional protective layers or shields to protect the heaters from process reactions or etching with process gases during processing. It can be inserted into the chamber. Additional shields and protective layers can degrade the heater's performance.

The wafer heating assemblies described herein can improve process performance, for example, by independently thermally controlling a plurality of heating zones within the wafer, resulting in faster ramp-up of temperature while reducing warp to zero levels. The lower thermal mass associated with the carbon wire heater allows for a faster temperature response, which allows for faster response to changes.

The wafer heating assembly described herein can be used for pulsed heat treatment, which is made possible by the rapid response of temperature by the low thermal mass associated with the carbon wire heater element, and through such pulsed heat treatment, conventional processing Compared to the above, it is possible to perform better thin film control in forming interlayer thin film.

According to the present invention, temperature control is improved. The present invention provides a heating unit capable of heating a wafer / substrate on a holder to a desired state by using a heater element with increased directivity in the vertical direction. The structure of the heating unit proposed herein makes it possible to control the temperature gradient across the wafer region, typically at a process temperature of 250 ° C. or higher. In one configuration, the temperature gradient across the wafer that is allowed by independent heater elements that can be isolated from each other is greater than the temperature gradient that can be achieved by solid block heaters typically used in conventional systems. In other embodiments, non-planar structures can be implemented. For example, the heater element may be configured to be positioned next to and / or above the wafer edge, to compensate for the emission loss and latent heat loss from the chamber wall. Lifting the heater element above the surface of the wafer improves control over the temperature gradient across the wafer, thereby improving uniformity.

Although only specific embodiments of the invention have been described in detail, those skilled in the art will readily appreciate that many modifications to the embodiments are possible without substantially departing from the novel teachings and advantages of the invention. Accordingly, all such modifications are considered to be included within the scope of this invention.

Claims (45)

A holding device having a plurality of recesses and having a wafer support portion configured to support a wafer; A plurality of heating units, wherein at least one of the heating units comprises a tube and a connection terminal, the tube having a carbon wire heater made of carbon fiber bundles and enclosed in the tube, wherein each tube is A plurality of heating units mounted to the recesses of the holding device, wherein the connection terminals are connected to both ends of the carbon wire heater; A mounting assembly coupled to the holding device and configured to mount a wafer heating assembly to the processing chamber Wafer heating assembly comprising a. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a substantially straight tube mounted in a substantially straight recess of the retaining device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a curved tube mounted to a curved recess of the holding device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a circular tube mounted in a circular recess of the retaining device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a square tube mounted in a square recess of the retaining device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a rectangular tube mounted in a rectangular recess of the retaining device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises an elliptical tube mounted in an elliptical recess of the retaining device. The wafer heating assembly of claim 1, wherein at least one of the heating units comprises a U-shaped tube mounted to a recess of the holding device. The wafer heating assembly of claim 8, wherein the recess is U-shaped. The method of claim 1, wherein at least one of the heating units includes a plurality of segments, each segment having a substantially straight tube enclosed therein with a carbon wire heater made of carbon fiber bundles, the angle of each carbon wire heater A connection terminal connected to an end, wherein said substantially straight tubes are each mounted in a substantially straight recess of said holding device. The method of claim 1, wherein at least one of the heating units includes a plurality of segments, each segment having a substantially straight tube enclosed therein with a carbon wire heater made of carbon fiber bundles, the angle of each carbon wire heater And a connecting terminal connected to an end, wherein the plurality of segments are mounted in a square recess of the retaining device. The method of claim 1, wherein at least one of the heating units includes a plurality of segments, each segment having a substantially straight tube enclosed therein with a carbon wire heater made of carbon fiber bundles, the angle of each carbon wire heater A connection terminal connected to an end, wherein the plurality of segments are mounted in a rectangular recess of the retaining device. 2. A curved tube according to claim 1, wherein at least one of the heating units includes a plurality of segments, each segment having a curved tube enclosed therein with a carbon wire heater made of carbon fiber bundles, and at each end of each carbon wire heater. And a connecting terminal to which the plurality of segments are mounted in a curved recess of the retaining device. The wafer heating assembly of claim 13, wherein the curved recess is circular. The wafer heating assembly of claim 13, wherein the curved recess is elliptical. The wafer heating assembly of claim 1, further comprising a heat barrier connected to the holding device and a cooling unit connected to the heat barrier. The wafer heating assembly of claim 1, further comprising a temperature sensor coupled to the holding device. The wafer heating of claim 1, wherein the heating unit further comprises a transition element connected to each end of the tube, and a sealing end connected to the transition element, each connecting terminal connected to at least one sealing end. Assembly. 19. The wafer heating assembly of claim 18, wherein the tube and the transition element are formed from a single piece of material. 20. The wafer heating assembly of claim 19, wherein the single member of predetermined material comprises a quartz glass tube. 19. The wafer heating assembly of claim 18, wherein the tube is formed from a first member of a predetermined material and the transition element is formed from a second member of a predetermined material. The wafer heating assembly of claim 21, wherein at least one or both of the first member of the given material and the second member of the given material comprise a quartz glass tube. 19. The wafer heating assembly of claim 18, wherein the sealing distal end comprises means for sealing the end of the transition element. 19. The wafer heating assembly of claim 18, wherein the sealing distal end comprises means for sealing the end of the tube. 19. The apparatus of claim 18, wherein the heating unit further comprises an end point element connected to both ends of the carbon wire heater, the end point element comprising a compressed wire carbon member, wherein the carbon wire heater is connected to the compressed wire carbon member. Embedded in the wafer heating assembly. The carbon wire heater of claim 1, wherein the carbon wire heater comprises a carbon wire, the carbon wire comprises at least one carbon fiber bundle, each carbon fiber bundle having at least 300 carbon fibers each having a diameter of 5-15 μm. Wafer heating assembly comprising a. 27. The wafer heating assembly of claim 26, wherein the carbon wire further comprises surface fluff. 27. The wafer heating assembly of claim 26, wherein the ash content of the carbon fibers is less than 10 ppm. The wafer heating assembly of claim 1, further comprising a cover connected to the holding device. 30. The wafer heating assembly of claim 29, wherein the wafer support comprises a plurality of ridges provided on the cover. 31. The wafer heating assembly of claim 30, wherein the at least one ridge comprises a temperature sensor. The wafer heating assembly of claim 1, wherein the wafer support comprises a plurality of ridges provided on the holding device. 33. The wafer heating assembly of claim 32, wherein the at least one ridge comprises a temperature sensor. The wafer heating assembly of claim 1, wherein the wafer support comprises a quartz wafer holder having at least three support points. 2. A further heating unit as recited in claim 1, further comprising additional tubes and connecting terminals, said additional tubes comprising a carbon wire heater made of carbon fiber bundles and enclosed in said additional tubes, said connecting terminals being further heated. Additional heating units connected to both ends of the carbon wire heater of the unit, And an additional mounting assembly coupled to the holding device and configured to place the additional heating unit over the wafer support. 2. A further heating unit as recited in claim 1, further comprising additional tubes and connecting terminals, said additional tubes comprising a carbon wire heater made of carbon fiber bundles and enclosed in said additional tubes, said connecting terminals being further heated. Additional heating units connected to both ends of the carbon wire heater of the unit, And an additional mounting assembly coupled to the holding device and configured to place the additional heating unit substantially around the wafer support. 2. A further heating unit as recited in claim 1, further comprising additional tubes and connecting terminals, said additional tubes comprising a carbon wire heater made of carbon fiber bundles and enclosed in said additional tubes, said connecting terminals being further heated. Additional heating units connected to both ends of the carbon wire heater of the unit, An additional retaining device connected to the additional pipe, and And an additional mounting assembly coupled to the additional holding device and configured to place the additional heating unit over the wafer support. 2. A further heating unit as recited in claim 1, further comprising additional tubes and connecting terminals, said additional tubes comprising a carbon wire heater made of carbon fiber bundles and enclosed in said additional tubes, said connecting terminals being further heated. Additional heating units connected to both ends of the carbon wire heater of the unit, An additional retaining device connected to the additional pipe, and And an additional mounting assembly coupled to the additional holding device and configured to place the additional heating unit substantially around the wafer support. 2. The second holding apparatus according to claim 1, further comprising: a second wafer support portion having a plurality of second recesses, the second wafer support portion configured to support the second wafer; A second plurality of heating units, at least one of the second plurality of heating units comprising a tube and a connecting terminal, the tube comprising a carbon wire heater made of a bundle of carbon fibers and enclosed in the tube; The pipes are respectively mounted in the recesses of the second holding device, the connecting terminals being connected to both ends of the carbon wire heaters of the second plurality of heating units; And a second mounting assembly coupled to the second holding device and configured to mount the second holding device to the processing chamber. Disposing a substrate on a substrate holder of a processing chamber, the substrate holder comprising a plurality of heating units, each heating unit comprising a tube and a connecting terminal, the tube consisting of a bundle of carbon fiber and within the tube A substrate arrangement step of having a sealed carbon wire heater, wherein each tube is mounted to a recess of the substrate holder, and the connection terminal is connected to both ends of the carbon wire heater; Performing a rapid thermal process on the substrate And a DC power source connected to each of the connection terminals, wherein the DC power is quickly applied to the carbon wire heater. Support means for supporting a semiconductor wafer, Heating means for independently heating different regions of the semiconductor wafer, and Means for mounting a wafer heating assembly to the processing chamber, the means being connected to the support means Wafer heating assembly comprising a. Independently controlling the plurality of carbon wire heater zones by independent temperature sensors, thereby providing a quick response for each independent zone to a multi-zone single wafer heater system, the control of the wafer due to rapid temperature changes. A substrate processing method that is adjustable to minimize distortion. Using a carbon wire heater element as a substrate support to minimize thermal mass and allow a temperature change fast enough to handle control by rapid thermal cycle increments. Using a carbon wire heater element on both sides of the substrate, the heater element having a plurality of independent heater regions, wherein the temperature response from each heater element and at least one heater region is rapid. 10. The system of claim 1, further comprising an alternate cooling loop corresponding to a carbon wire heater element for increasing the temperature response speed, said cooling loop flowing a cooling gas or other thermally compatible coolant or fluid. And a wafer heating assembly.

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