JP6798017B6 - 基板にわたってパラメータ変動を修正する処理装置及び方法 - Google Patents
基板にわたってパラメータ変動を修正する処理装置及び方法 Download PDFInfo
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- JP6798017B6 JP6798017B6 JP2019518916A JP2019518916A JP6798017B6 JP 6798017 B6 JP6798017 B6 JP 6798017B6 JP 2019518916 A JP2019518916 A JP 2019518916A JP 2019518916 A JP2019518916 A JP 2019518916A JP 6798017 B6 JP6798017 B6 JP 6798017B6
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- 238000000034 method Methods 0.000 title claims description 44
- 238000012545 processing Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims description 89
- 238000012937 correction Methods 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 description 23
- 238000001459 lithography Methods 0.000 description 20
- 238000005259 measurement Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 10
- 230000009471 action Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
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- 238000012546 transfer Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
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- 230000006870 function Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009711 regulatory function Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67796—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations with angular orientation of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
[0001] 本願は、2016年10月17日に出願された欧州出願欧州特許出願公開第16194224.8号及び2017年4月19日に出願された欧州出願欧州特許出願公開第17167041.7号の優先権を主張するものであり、これらの特許は、参照によりその全体が本明細書に援用される。
基板を、基板上のフィールドのレイアウトに関連付けられたグリッドに対して所定の向きで導入するように構成された基板導入デバイスと、
基板に対して行われるプロセスの特性の局所修正を可能にするように構成された修正要素と
を含む基板処理装置において、修正要素は、グリッドのX軸又はY軸に平行でない方向を有する少なくとも1つの修正軸に沿って配置されることを特徴とする、基板処理装置を提供する。
リソグラフィ装置を使用して基板上のフィールドのグリッドにパターンを露光することと、
修正要素のグリッドを使用するプロセスツールに基板を移送することと、
フィールドのグリッドが修正要素のグリッドに対して所定の角度で傾くように基板を方向付けることと、
プロセスツールを使用してパターンを基板に転写することと
を含むデバイス製造プロセスを提供する。
ED(X,Y)=F(X)+G(Y)
Claims (6)
- 基板を、前記基板上のフィールドのレイアウトに関連付けられたグリッドに対して所定の向きで導入する基板導入デバイスと、
基板に対して行われるプロセスの特性の局所修正を可能にする修正要素と
を含み、
前記修正要素は、前記グリッドの軸X,Yに対して角度θで方向付けられた修正軸X’,Y’に沿って配置されることを特徴とする、基板処理装置。 - 前記修正軸X’,Y’は、前記基板上の前記フィールドのレイアウトに関連付けられた前記グリッドの軸X,Yに対して45±40°の角度で配置される、請求項1に記載の基板処理装置。
- 前記基板を前記修正軸に対して回転させる回転手段をさらに含む、請求項1又は2に記載の基板処理装置。
- 前記回転手段は、0〜90°の回転角度の選択を可能にする、請求項3に記載の基板処理装置。
- 半導体プロセスを最適化する方法であって、請求項1に記載の基板処理装置を使用するステップを含む方法。
- リソグラフィ装置を使用して基板上のフィールドの軸X、Yに合わされたグリッドにパターンを露光することと、
修正要素の修正軸X’,Y’に合わされたグリッドを使用するプロセスツールに前記基板を移送することと、
前記フィールドのグリッドが前記修正要素のグリッドに対して所定の角度で傾くように前記基板を回転させることと、
前記プロセスツールを使用して前記パターンを前記基板に転写することと
を含むデバイス製造プロセス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16194224.8 | 2016-10-17 | ||
EP16194224 | 2016-10-17 | ||
EP17167041.7 | 2017-04-19 | ||
EP17167041 | 2017-04-19 | ||
PCT/EP2017/073867 WO2018072961A1 (en) | 2016-10-17 | 2017-09-21 | A processing apparatus and a method for correcting a parameter variation across a substrate |
Publications (3)
Publication Number | Publication Date |
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JP2019532342A JP2019532342A (ja) | 2019-11-07 |
JP6798017B2 JP6798017B2 (ja) | 2020-12-09 |
JP6798017B6 true JP6798017B6 (ja) | 2021-01-13 |
Family
ID=59887297
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Application Number | Title | Priority Date | Filing Date |
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JP2019518916A Active JP6798017B6 (ja) | 2016-10-17 | 2017-09-21 | 基板にわたってパラメータ変動を修正する処理装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190311921A1 (ja) |
JP (1) | JP6798017B6 (ja) |
KR (1) | KR102232042B1 (ja) |
CN (2) | CN109863585A (ja) |
TW (1) | TWI654498B (ja) |
WO (1) | WO2018072961A1 (ja) |
Families Citing this family (2)
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KR102558635B1 (ko) * | 2018-08-03 | 2023-07-21 | 도쿄엘렉트론가부시키가이샤 | 반도체 웨이퍼의 국부적인 왜곡의 결정에 기초한 전역적인 웨이퍼 왜곡의 개선 |
TWI824334B (zh) * | 2018-08-17 | 2023-12-01 | 荷蘭商Asml荷蘭公司 | 非暫時性電腦可讀媒體 |
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US5451261A (en) * | 1992-09-11 | 1995-09-19 | Matsushita Electric Industrial Co., Ltd. | Metal film deposition apparatus and metal film deposition method |
WO1998005060A1 (en) * | 1996-07-31 | 1998-02-05 | The Board Of Trustees Of The Leland Stanford Junior University | Multizone bake/chill thermal cycling module |
JP3897582B2 (ja) * | 2000-12-12 | 2007-03-28 | キヤノン株式会社 | 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置 |
US6440821B1 (en) * | 2001-02-14 | 2002-08-27 | Advanced Micro Devices, Inc. | Method and apparatus for aligning wafers |
WO2004075268A1 (ja) * | 2003-02-19 | 2004-09-02 | Nikon Corporation | 移動方法、露光方法及び露光装置、並びにデバイス製造方法 |
US20050000438A1 (en) * | 2003-07-03 | 2005-01-06 | Lim Brian Y. | Apparatus and method for fabrication of nanostructures using multiple prongs of radiating energy |
US6940047B2 (en) * | 2003-11-14 | 2005-09-06 | Asm International N.V. | Heat treatment apparatus with temperature control system |
US20050217799A1 (en) * | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Wafer heater assembly |
US20060222975A1 (en) * | 2005-04-02 | 2006-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated optical metrology and lithographic process track for dynamic critical dimension control |
JP2009500869A (ja) * | 2005-07-11 | 2009-01-08 | ブルックス オートメーション インコーポレイテッド | オンザフライ(onthefly)ワークピースセンタリングを備えた装置 |
US8776717B2 (en) * | 2005-10-11 | 2014-07-15 | Intermolecular, Inc. | Systems for discretized processing of regions of a substrate |
US7625680B2 (en) * | 2006-09-29 | 2009-12-01 | Tokyo Electron Limited | Method of real time dynamic CD control |
US7483804B2 (en) * | 2006-09-29 | 2009-01-27 | Tokyo Electron Limited | Method of real time dynamic CD control |
US9177219B2 (en) | 2010-07-09 | 2015-11-03 | Asml Netherlands B.V. | Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product |
NL2008272A (en) | 2011-03-09 | 2012-09-11 | Asml Netherlands Bv | Lithographic apparatus. |
US10006717B2 (en) * | 2014-03-07 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adaptive baking system and method of using the same |
KR102302723B1 (ko) * | 2014-07-23 | 2021-09-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 튜닝가능한 온도 제어되는 기판 지지 어셈블리 |
US10643826B2 (en) * | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
-
2017
- 2017-09-21 WO PCT/EP2017/073867 patent/WO2018072961A1/en active Application Filing
- 2017-09-21 CN CN201780063869.2A patent/CN109863585A/zh active Pending
- 2017-09-21 CN CN202311839832.8A patent/CN117855094A/zh active Pending
- 2017-09-21 KR KR1020197013806A patent/KR102232042B1/ko active IP Right Grant
- 2017-09-21 JP JP2019518916A patent/JP6798017B6/ja active Active
- 2017-09-21 US US16/340,702 patent/US20190311921A1/en active Pending
- 2017-10-16 TW TW106135269A patent/TWI654498B/zh active
Also Published As
Publication number | Publication date |
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US20190311921A1 (en) | 2019-10-10 |
CN109863585A (zh) | 2019-06-07 |
CN117855094A (zh) | 2024-04-09 |
TWI654498B (zh) | 2019-03-21 |
TW201830173A (zh) | 2018-08-16 |
KR102232042B1 (ko) | 2021-03-25 |
JP2019532342A (ja) | 2019-11-07 |
KR20190058663A (ko) | 2019-05-29 |
WO2018072961A1 (en) | 2018-04-26 |
JP6798017B2 (ja) | 2020-12-09 |
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