JP2007537582A - ウェハヒータアッセンブリ - Google Patents

ウェハヒータアッセンブリ Download PDF

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Publication number
JP2007537582A
JP2007537582A JP2007506149A JP2007506149A JP2007537582A JP 2007537582 A JP2007537582 A JP 2007537582A JP 2007506149 A JP2007506149 A JP 2007506149A JP 2007506149 A JP2007506149 A JP 2007506149A JP 2007537582 A JP2007537582 A JP 2007537582A
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JP
Japan
Prior art keywords
wafer
heating
carbon
tube
heating assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007506149A
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English (en)
Japanese (ja)
Inventor
オメアラ、デイビッド・エル．
レウシンク、ジャーリット・ジェイ．
カブラル、スティーブン・エイチ．
ディップ、アンソニー
ワジダ、コリー
ジョー、レイモンド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2007537582A publication Critical patent/JP2007537582A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
JP2007506149A 2004-03-31 2005-02-01 ウェハヒータアッセンブリ Withdrawn JP2007537582A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,119 US20050217799A1 (en) 2004-03-31 2004-03-31 Wafer heater assembly
PCT/US2005/002766 WO2005103333A2 (en) 2004-03-31 2005-02-01 Wafer heater assembly

Publications (1)

Publication Number Publication Date
JP2007537582A true JP2007537582A (ja) 2007-12-20

Family

ID=35052985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506149A Withdrawn JP2007537582A (ja) 2004-03-31 2005-02-01 ウェハヒータアッセンブリ

Country Status (6)

Country Link
US (1) US20050217799A1 (zh)
JP (1) JP2007537582A (zh)
KR (1) KR20070008569A (zh)
CN (1) CN101023197A (zh)
TW (1) TWI305656B (zh)
WO (1) WO2005103333A2 (zh)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302547A (ja) * 2008-06-13 2009-12-24 Asm Internatl Nv 改善された熱特性を具えた半導体処理装置およびその処理装置を提供する方法
JP2014150186A (ja) * 2013-02-01 2014-08-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2015520010A (ja) * 2012-03-26 2015-07-16 ヘレーウス ノーブルライト ゲゼルシャフト ミット ベシュレンクテルハフツングＨｅｒａｅｕｓ Ｎｏｂｌｅｌｉｇｈｔ ＧｍｂＨ 基板照射装置
WO2016135876A1 (ja) * 2015-02-25 2016-09-01 株式会社日立国際電気 基板処理装置、ヒータおよび半導体装置の製造方法
JP2017073232A (ja) * 2015-10-05 2017-04-13 クアーズテック株式会社 面状ヒータ
JP2017228649A (ja) * 2016-06-22 2017-12-28 日本特殊陶業株式会社 保持装置
KR20180004002A (ko) * 2016-07-01 2018-01-10 도쿄엘렉트론가부시키가이샤 기판 액 처리 장치, 기판 액 처리 방법 및 기록 매체
JP2019532342A (ja) * 2016-10-17 2019-11-07 エーエスエムエル ネザーランズ ビー．ブイ． 基板にわたってパラメータ変動を修正する処理装置及び方法
JP2020532142A (ja) * 2017-08-30 2020-11-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 一体化されたエピタキシと予洗浄システム
JP2021125515A (ja) * 2020-02-04 2021-08-30 日本碍子株式会社 静電チャックヒータ
US11605544B2 (en) 2020-09-18 2023-03-14 Applied Materials, Inc. Methods and systems for cleaning high aspect ratio structures
JP7326187B2 (ja) 2020-02-28 2023-08-15 クアーズテック株式会社 面状ヒータ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201041455A (en) * 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
GB0410743D0 (en) * 2004-05-14 2004-06-16 Vivactiss Bvba Holder for wafers
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2006222214A (ja) * 2005-02-09 2006-08-24 Dainippon Screen Mfg Co Ltd 熱処理装置
US7265066B2 (en) * 2005-03-29 2007-09-04 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
US7300891B2 (en) * 2005-03-29 2007-11-27 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
US7452793B2 (en) * 2005-03-30 2008-11-18 Tokyo Electron Limited Wafer curvature estimation, monitoring, and compensation
US7789962B2 (en) * 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
JP2007012734A (ja) * 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd プラズマエッチング装置及びプラズマエッチング方法
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP2007201128A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及び半導体製造装置
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP4407685B2 (ja) * 2006-10-11 2010-02-03 セイコーエプソン株式会社 半導体装置の製造方法および電子機器の製造方法
KR100862588B1 (ko) * 2006-12-26 2008-10-10 주식회사 테라세미콘 반응챔버의 히팅장치
US7671412B2 (en) * 2007-02-15 2010-03-02 Tokyo Electron Limited Method and device for controlling temperature of a substrate using an internal temperature control device
EP2062854B1 (en) * 2007-08-03 2011-12-28 Teoss CO., LTD. Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same
US8993939B2 (en) 2008-01-18 2015-03-31 Momentive Performance Materials Inc. Resistance heater
KR20090079540A (ko) * 2008-01-18 2009-07-22 주식회사 코미코 기판 지지 장치 및 이를 갖는 기판 처리 장치
US20100014097A1 (en) * 2008-07-17 2010-01-21 Nikon Corporation Algorithm correcting for correction of interferometer fluctuation
US20100247804A1 (en) * 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal
KR20120052287A (ko) * 2009-08-06 2012-05-23 스미토모덴키고교가부시키가이샤 성막 장치
JP5570938B2 (ja) * 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
KR20120105827A (ko) * 2011-03-16 2012-09-26 삼성전자주식회사 정착장치용 발열체, 이를 구비한 정착장치 및 화상형성장치
WO2013142594A1 (en) * 2012-03-20 2013-09-26 Momentive Performance Materials Inc. Resistance heater
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
CN104731156B (zh) * 2013-12-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种加热灯的监控方法
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US10006717B2 (en) 2014-03-07 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive baking system and method of using the same
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6630146B2 (ja) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および加熱部
CN109616434A (zh) 2015-02-25 2019-04-12 株式会社国际电气 衬底处理装置及方法、半导体器件的制造方法以及加热部
US10161041B2 (en) 2015-10-14 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal chemical vapor deposition system and operating method thereof
CN108682635B (zh) * 2018-05-03 2021-08-06 拓荆科技股份有限公司 具有加热机制的晶圆座及包含该晶圆座的反应腔体
JP2020004526A (ja) * 2018-06-26 2020-01-09 クアーズテック株式会社 カーボンワイヤーヒータ
CN114072898A (zh) * 2019-05-24 2022-02-18 应用材料公司 基板处理腔室
US11542604B2 (en) 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI711717B (zh) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
TWI727907B (zh) * 2019-11-06 2021-05-11 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
CN111725114B (zh) * 2020-06-30 2023-07-14 北京北方华创微电子装备有限公司 加热灯的位置校正装置
CN114496692B (zh) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 加热组件、基片承载组件及其等离子体处理装置
CN113201728B (zh) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 半导体晶圆承载结构及金属有机化学气相沉积装置
CN115424913A (zh) * 2021-06-01 2022-12-02 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其可伸缩密封部
JP2023027962A (ja) * 2021-08-18 2023-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN115442927B (zh) * 2022-11-04 2023-03-10 上海星原驰半导体有限公司 复合式控温盘

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置
US5223113A (en) * 1990-07-20 1993-06-29 Tokyo Electron Limited Apparatus for forming reduced pressure and for processing object
JP3288200B2 (ja) * 1995-06-09 2002-06-04 東京エレクトロン株式会社 真空処理装置
JPH10102257A (ja) * 1996-09-27 1998-04-21 Nippon Process Eng Kk 化学的気相成長法による成膜装置
TW452826B (en) * 1997-07-31 2001-09-01 Toshiba Ceramics Co Carbon heater
US6530994B1 (en) * 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6688375B1 (en) * 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
KR100334993B1 (ko) * 1998-12-01 2002-05-02 추후제출 히터
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
DE10059665C1 (de) * 2000-12-01 2002-07-11 Steag Hamatech Ag Verfahren zum thermischen Behandeln von Substraten
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
KR100547189B1 (ko) * 2003-04-23 2006-01-31 스타전자(주) 그라파이트 펠트를 이용하는 탄소 발열 장치의 제조 방법

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302547A (ja) * 2008-06-13 2009-12-24 Asm Internatl Nv 改善された熱特性を具えた半導体処理装置およびその処理装置を提供する方法
JP2015520010A (ja) * 2012-03-26 2015-07-16 ヘレーウス ノーブルライト ゲゼルシャフト ミット ベシュレンクテルハフツングＨｅｒａｅｕｓ Ｎｏｂｌｅｌｉｇｈｔ ＧｍｂＨ 基板照射装置
JP2014150186A (ja) * 2013-02-01 2014-08-21 Hitachi High-Technologies Corp プラズマ処理装置
US11359285B2 (en) 2015-02-25 2022-06-14 Kokusai Electric Corporation Substrate processing apparatus, heater and method of manufacturing semiconductor device
JPWO2016135876A1 (ja) * 2015-02-25 2017-11-09 株式会社日立国際電気 基板処理装置、ヒータおよび半導体装置の製造方法
US10597780B2 (en) 2015-02-25 2020-03-24 Kokusai Electric Corporation Substrate processing apparatus, heater and method of manufacturing semiconductor device
WO2016135876A1 (ja) * 2015-02-25 2016-09-01 株式会社日立国際電気 基板処理装置、ヒータおよび半導体装置の製造方法
JP2017073232A (ja) * 2015-10-05 2017-04-13 クアーズテック株式会社 面状ヒータ
JP2017228649A (ja) * 2016-06-22 2017-12-28 日本特殊陶業株式会社 保持装置
KR20180004002A (ko) * 2016-07-01 2018-01-10 도쿄엘렉트론가부시키가이샤 기판 액 처리 장치, 기판 액 처리 방법 및 기록 매체
KR102364189B1 (ko) 2016-07-01 2022-02-17 도쿄엘렉트론가부시키가이샤 기판 액 처리 장치, 기판 액 처리 방법 및 기록 매체
JP2019532342A (ja) * 2016-10-17 2019-11-07 エーエスエムエル ネザーランズ ビー．ブイ． 基板にわたってパラメータ変動を修正する処理装置及び方法
US11164737B2 (en) 2017-08-30 2021-11-02 Applied Materials, Inc. Integrated epitaxy and preclean system
JP7029522B2 (ja) 2017-08-30 2022-03-03 アプライド マテリアルズ インコーポレイテッド 一体化されたエピタキシと予洗浄システム
JP2020532142A (ja) * 2017-08-30 2020-11-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 一体化されたエピタキシと予洗浄システム
JP2021125515A (ja) * 2020-02-04 2021-08-30 日本碍子株式会社 静電チャックヒータ
US11600510B2 (en) 2020-02-04 2023-03-07 Ngk Insulators, Ltd. Electrostatic chuck heater
JP7248608B2 (ja) 2020-02-04 2023-03-29 日本碍子株式会社 静電チャックヒータ
JP7326187B2 (ja) 2020-02-28 2023-08-15 クアーズテック株式会社 面状ヒータ
US11605544B2 (en) 2020-09-18 2023-03-14 Applied Materials, Inc. Methods and systems for cleaning high aspect ratio structures

Also Published As

Publication number Publication date
WO2005103333A3 (en) 2006-09-14
TW200540937A (en) 2005-12-16
TWI305656B (en) 2009-01-21
WO2005103333A2 (en) 2005-11-03
KR20070008569A (ko) 2007-01-17
CN101023197A (zh) 2007-08-22
US20050217799A1 (en) 2005-10-06

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