KR20060070578A - 반도체장치의 제조 방법 및 기판처리장치 - Google Patents
반도체장치의 제조 방법 및 기판처리장치 Download PDFInfo
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- KR20060070578A KR20060070578A KR1020067008316A KR20067008316A KR20060070578A KR 20060070578 A KR20060070578 A KR 20060070578A KR 1020067008316 A KR1020067008316 A KR 1020067008316A KR 20067008316 A KR20067008316 A KR 20067008316A KR 20060070578 A KR20060070578 A KR 20060070578A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
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- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
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Abstract
Description
Claims (20)
- 적어도 1매의 기판을 반응실에 장입하는 공정과,상기 반응실 내에 반응가스를 도입하고 상기 반응실 내를 배기하여 상기 기판을 처리하는 공정과,상기 처리후의 기판을 상기 반응실로부터 인출하는 공정을 포함하며,상기 기판을 장입하는 공정 및/또는 기판을 인출하는 공정은 상기 기판을 처리하는 공정에서의 배기유량보다 큰 배기유량으로 상기 반응실 내를 배기하는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제1항에 있어서, 상기 기판을 장입하는 공정 및/또는 기판을 인출하는 공정에서는, 상기 반응실 내에 불활성 가스를 도입하는 동시에 상기 기판을 처리하는 공정에서의 배기유량보다 큰 배기유량으로 상기 반응실 내를 배기하는 것을 특징으로 하는 반도체장치의 제조 방법.
- 적어도 1매의 기판을 반응실 내에 장입하는 공정과,상기 반응실 내에 반응가스를 도입하고 진공펌프에 연통(連通)한 제1 배기라인으로부터 상기 반응실 내를 배기하여 상기 기판을 처리하는 공정과,상기 처리후의 기판을 상기 반응실로부터 인출하는 공정을 포함하며,상기 기판을 장입하는 공정 및/또는 기판을 인출하는 공정은 상기 제1 배기 라인보다 배기유량이 큰 제2 배기라인으로 상기 반응실 내를 배기하는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제3항에 있어서, 상기 기판을 장입하는 공정 및/또는 기판을 인출하는 공정은 상기 반응실 내에 불활성 가스를 도입하는 동시에 상기 제1 배기라인보다 배기유량이 큰 제2 배기라인으로 상기 반응실 내를 배기하는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제3항에 있어서, 기판을 인출한 후 반응실 내를 불활성 가스로 퍼지하는 공정을 더 포함하며, 상기 기판을 인출하는 공정부터 상기 반응실 내를 퍼지하는 공정이 종료할 때까지 연속적으로 상기 반응실 내에 불활성 가스를 도입하면서 상기 제1 배기라인보다 배기유량이 큰 제2 배기라인으로 상기 반응실 내를 배기하는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제3항에 있어서, 상기 제2 배기라인은 건물 부대설비의 배기설비에 연통되어 있는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제3항에 있어서, 상기 기판을 처리하는 공정은 기판 위에 실리콘 질화막을 퇴적시키는 것을 특징으로 하는 반도체장치의 제조 방법.
- 제4항에 있어서, 상기 불활성 가스의 유량은 반응가스 유량의 100배 이상인 것을 특징으로 하는 반도체장치의 제조 방법.
- 제4항에 있어서, 상기 불활성 가스의 유량은 100L/min 이상인 것을 특징으로 하는 반도체장치의 제조 방법.
- 제4항에 있어서, 상기 불활성 가스의 유량은 100L/min∼200L/min인 것을 특징으로 하는 반도체장치의 제조 방법.
- 제4항에 있어서, 상기 제2 배기라인의 배기유량은 상기 불활성 가스의 공급 유량보다 큰 것을 특징으로 하는 반도체장치의 제조 방법.
- 제4항에 있어서, 상기 불활성 가스가 가열되어 상기 반응실 내에 도입되는 것을 특징으로 하는 반도체장치의 제조 방법.
- 적어도 1매의 기판을 처리하는 반응실과,상기 반응실 내에 가스를 도입하는 적어도 하나의 가스공급라인과,상기 반응실 내의 배기를 진공펌프에 의해 수행하는 제1 배기라인과,상기 반응실 내의 배기를 수행하는 상기 제1 배기라인보다 배기유량이 큰 제2 배기라인과,상기 반응실 내에 기판을 장입할 때 및/또는 상기 반응실로부터의 기판을 인출할때 상기 제2 배기라인으로 상기 반응실내를 배기하도록 제어하는 컨트롤러를 갖는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 컨트롤러는, 상기 반응실 내에 기판을 장입할 때 및/또는 상기 반응실로부터 기판을 인출할 때 상기 가스공급라인으로부터 상기 반응실 내에 불활성 가스를 도입하면서 상기 제2 배기라인으로 상기 반응실 내를 배기하도록 제어하는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 컨트롤러는, 상기 기판을 인출할 때부터 기판을 인출한후 수행하는 반응실 퍼지가 종료할 때까지 사이에 연속적으로 상기 가스공급라인으로부터 상기 반응실 내에 불활성 가스를 도입하면서 상기 제2 배기라인으로 상기 반응실 내를 배기하도록 제어하는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 제2 배기라인은 건물 부대설비의 배기설비에 연통하고 있는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 반응실 내에 있어서 기판을 수평으로 다단으로 장전하는 보지구를 갖는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 반응실은 외부 반응관과 내부 반응관으로 구성되는 것을 특징으로 하는 기판처리장치.
- 제13항에 있어서, 상기 반응실에 상기 기판을 대기시켜 두는 예비실이 연접되어 있는 것을 특징으로 하는 기판처리장치.
- 제14항에 있어서, 상기 가스공급라인은 반응가스용 라인과 불활성 가스용 라인을 갖고, 상기 불활성 가스는 상기 불활성 가스용 라인으로부터 도입되는 것을 특징으로 하는 기판처리장치.
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JP2003391194 | 2003-11-20 | ||
JPJP-P-2003-00391194 | 2003-11-20 |
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US (1) | US7494941B2 (ko) |
JP (2) | JP4320323B2 (ko) |
KR (1) | KR100802990B1 (ko) |
CN (1) | CN1868042A (ko) |
TW (1) | TW200527513A (ko) |
WO (1) | WO2005050725A1 (ko) |
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JP5028957B2 (ja) * | 2005-12-28 | 2012-09-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置並びに記憶媒体 |
JP4797068B2 (ja) * | 2006-08-04 | 2011-10-19 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP4838083B2 (ja) * | 2006-09-20 | 2011-12-14 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP4464979B2 (ja) * | 2007-03-05 | 2010-05-19 | 東京エレクトロン株式会社 | 処理システム、処理方法、及び、プログラム |
JP2009138210A (ja) * | 2007-12-04 | 2009-06-25 | Sony Corp | 成膜装置および成膜方法ならびに発光装置の製造方法 |
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US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US7985188B2 (en) | 2009-05-13 | 2011-07-26 | Cv Holdings Llc | Vessel, coating, inspection and processing apparatus |
WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
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CN1868042A (zh) | 2006-11-22 |
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