JP4361932B2 - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4361932B2 JP4361932B2 JP2006510994A JP2006510994A JP4361932B2 JP 4361932 B2 JP4361932 B2 JP 4361932B2 JP 2006510994 A JP2006510994 A JP 2006510994A JP 2006510994 A JP2006510994 A JP 2006510994A JP 4361932 B2 JP4361932 B2 JP 4361932B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- gas supply
- processing apparatus
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期と、基板の回転周期とが、少なくともガスの交互供給が所定の回数実行される間、同期しないように基板の回転周期またはガス供給周期を制御する制御部を備えた基板処理装置が提供される。
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、ガスA、Bの交互供給数が所定回数実行されるように基板の回転周期またはガス供給時間を制御する制御部を備えた基板処理装置が提供される。
基板を処理する反応室と、
前記反応室内で前記基板を保持しかつ回転させる回転機構と、
反応ガスを前記反応室内に供給するガス供給系と、
前記反応ガスを周期的に前記反応室内に供給する際、前記反応ガスの供給周期と前記基板の回転周期が、一定時間以上同期しないように前記回転機構と前記ガス供給系とを制御する制御部と、を備える基板処理装置が提供される。
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期と、基板の回転周期とが、少なくともガスの交互供給が所定の回数実行される間、同期しないように基板の回転周期またはガス供給周期を制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法が提供dされる。
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、ガスA、Bの交互供給数が所定回数実行されるように基板の回転周期またはガス供給時間を制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法が提供される。
|mP−nT|>≠0(n、mは自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
この式(1)を満たせば、例えばガス供給サイクル中のガスAの供給開始タイミングが、基板の回転位置と同期することを防ぐことができ(図2参照)、均一性を改善することが可能である。
このときのヒータ207温度はウエハ200が300〜600℃になるよう設定してある。NH3は反応温度が高いため、上記ウエハ温度では反応しないので、プラズマ励起することにより活性種としてから流すようにしており、このためウエハ温度は設定した低い温度範囲のままで行える。
以上で1cycleとなり、これら(1)〜(9)を繰り返すことにより、成膜を進行させる。
カセット移載機114等の搬送動作は、搬送制御手段124により制御される。
その結果、本発明は、ガスを使用して半導体Siウエハ等の半導体基板を処理する基板処理装置および半導体装置の製造方法に特に好適に利用できる。
Claims (12)
- 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期と、基板の回転周期とが、少なくともガスの交互供給が所定の回数実行される間、同期しないように基板の回転周期またはガス供給周期を制御する制御部を備えた基板処理装置。 - 前記制御部は、前記ガス供給周期と前記基板の回転周期とが、少なくともガスの交互供給が所定の回数実行される間、同期しないように前記基板の回転周期を制御する請求項1記載の基板処理装置。
- 前記制御部は、前記ガス供給周期と前記基板の回転周期とが、少なくともガスの交互供給が10サイクル実行される間、同期しないように前記基板の回転周期または前記ガス供給周期を制御する請求項1記載の基板処理装置。
- 前記制御部は、前記ガス供給周期と前記基板の回転周期とが、少なくともガスの交互供給が60サイクル実行される間、同期しないように前記基板の回転周期または前記ガス供給周期を制御する請求項1記載の基板処理装置。
- 前記ガス供給部は、前記ガスを前記基板の周辺方向から基板中心方向へ供給して前記ガスを前記基板上に供給する請求項1記載の基板処理装置。
- 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、ガスA、Bの交互供給数が所定回数実行されるように基板の回転周期またはガス供給時間を制御する制御部を備えた基板処理装置。 - 前記制御部は、ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、ガスA、Bの交互供給数が所定回数実行されるように前記基板の回転周期を制御する請求項6記載の基板処理装置。
- 前記制御部は、ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、少なくとも前記ガスA、Bの交互供給が10サイクル実行されるように前記基板の回転周期またはガス供給時間を制御する請求項6記載の基板処理装置。
- 前記制御部は、ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、少なくとも前記ガスA、Bの交互供給が60サイクル実行されるように前記基板の回転周期またはガス供給時間を制御する請求項6記載の基板処理装置。
- 基板を処理する反応室と、
前記反応室内で前記基板を保持しかつ回転させる回転機構と、
反応ガスを前記反応室内に供給するガス供給系と、
前記反応ガスを周期的に前記反応室内に供給する際、前記反応ガスの供給周期と前記基板の回転周期が、一定時間以上同期しないように前記回転機構と前記ガス供給系とを制御する制御部と、を備える基板処理装置。 - 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期と、基板の回転周期とが、少なくともガスの交互供給が所定の回数実行される間、同期しないように基板の回転周期またはガス供給周期を制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法。 - 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAが前記基板の任意の箇所に供給されてから、次に該任意の箇所にガスAが供給されるまでの間に、ガスA、Bの交互供給数が所定回数実行されるように基板の回転周期またはガス供給時間を制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004070136 | 2004-03-12 | ||
JP2004070136 | 2004-03-12 | ||
PCT/JP2005/004299 WO2005088692A1 (ja) | 2004-03-12 | 2005-03-11 | 基板処理装置および半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009163570A Division JP5027850B2 (ja) | 2004-03-12 | 2009-07-10 | 基板処理装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005088692A1 JPWO2005088692A1 (ja) | 2008-01-31 |
JP4361932B2 true JP4361932B2 (ja) | 2009-11-11 |
Family
ID=34975858
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006510994A Active JP4361932B2 (ja) | 2004-03-12 | 2005-03-11 | 基板処理装置および半導体装置の製造方法 |
JP2009163570A Active JP5027850B2 (ja) | 2004-03-12 | 2009-07-10 | 基板処理装置および半導体装置の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009163570A Active JP5027850B2 (ja) | 2004-03-12 | 2009-07-10 | 基板処理装置および半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7950348B2 (ja) |
JP (2) | JP4361932B2 (ja) |
KR (1) | KR100674467B1 (ja) |
CN (1) | CN100452315C (ja) |
TW (1) | TWI334450B (ja) |
WO (1) | WO2005088692A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI334450B (en) * | 2004-03-12 | 2010-12-11 | Hitachi Int Electric Inc | Wafer treatment device and the manufacturing method of semiconductor device |
US7740704B2 (en) * | 2004-06-25 | 2010-06-22 | Tokyo Electron Limited | High rate atomic layer deposition apparatus and method of using |
WO2006087893A1 (ja) * | 2005-02-17 | 2006-08-24 | Hitachi Kokusai Electric Inc. | 基板処理方法および基板処理装置 |
US8555808B2 (en) | 2006-05-01 | 2013-10-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
JP4228008B2 (ja) * | 2006-08-23 | 2009-02-25 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP5273936B2 (ja) * | 2007-04-02 | 2013-08-28 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US8425977B2 (en) | 2008-09-29 | 2013-04-23 | Applied Materials, Inc. | Substrate processing chamber with off-center gas delivery funnel |
JP5861762B2 (ja) * | 2010-03-19 | 2016-02-16 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体 |
JP5742185B2 (ja) * | 2010-03-19 | 2015-07-01 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体 |
JP5872141B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | 基板処理装置、その制御装置およびその制御方法 |
JP5805461B2 (ja) * | 2010-10-29 | 2015-11-04 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5794194B2 (ja) * | 2012-04-19 | 2015-10-14 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6027490B2 (ja) * | 2013-05-13 | 2016-11-16 | 東京エレクトロン株式会社 | ガスを供給する方法、及びプラズマ処理装置 |
KR102264257B1 (ko) | 2014-12-30 | 2021-06-14 | 삼성전자주식회사 | 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법 |
CN106048560A (zh) * | 2016-06-24 | 2016-10-26 | 浙江晶科能源有限公司 | 一种硅片ald镀膜方法和装置 |
JP6919498B2 (ja) * | 2017-10-27 | 2021-08-18 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN110565072B (zh) * | 2018-06-05 | 2023-06-09 | 长鑫存储技术有限公司 | 一种原子层沉积方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050923A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | プラズマ表面処理方法 |
JP2000058527A (ja) | 1998-08-05 | 2000-02-25 | Toshiba Mach Co Ltd | 回転型気相成長装置及び気相成長方法 |
US6812157B1 (en) * | 1999-06-24 | 2004-11-02 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
AU6336700A (en) | 1999-06-24 | 2001-01-09 | Gadgil, Prasad Narhar | Apparatus for atomic layer chemical vapor deposition |
US6576062B2 (en) * | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
KR100458982B1 (ko) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법 |
JP2003045864A (ja) * | 2001-08-02 | 2003-02-14 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2004134457A (ja) * | 2002-10-08 | 2004-04-30 | Canon Inc | プラズマ処理方法 |
TWI334450B (en) * | 2004-03-12 | 2010-12-11 | Hitachi Int Electric Inc | Wafer treatment device and the manufacturing method of semiconductor device |
US7632542B2 (en) * | 2005-10-26 | 2009-12-15 | University Of Maryland | Method for controlling uniformity of thin films fabricated in processing systems |
-
2005
- 2005-03-10 TW TW094107285A patent/TWI334450B/zh active
- 2005-03-11 JP JP2006510994A patent/JP4361932B2/ja active Active
- 2005-03-11 WO PCT/JP2005/004299 patent/WO2005088692A1/ja active Application Filing
- 2005-03-11 CN CNB200580000901XA patent/CN100452315C/zh active Active
- 2005-03-11 KR KR1020067005079A patent/KR100674467B1/ko active IP Right Grant
- 2005-03-11 US US10/592,348 patent/US7950348B2/en active Active
-
2009
- 2009-07-10 JP JP2009163570A patent/JP5027850B2/ja active Active
-
2011
- 2011-05-10 US US13/104,626 patent/US8901011B2/en active Active
-
2014
- 2014-10-31 US US14/530,144 patent/US20150050818A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20150050818A1 (en) | 2015-02-19 |
TW200600606A (en) | 2006-01-01 |
US8901011B2 (en) | 2014-12-02 |
JPWO2005088692A1 (ja) | 2008-01-31 |
TWI334450B (en) | 2010-12-11 |
KR100674467B1 (ko) | 2007-01-25 |
CN1842899A (zh) | 2006-10-04 |
JP5027850B2 (ja) | 2012-09-19 |
US7950348B2 (en) | 2011-05-31 |
US20110212626A1 (en) | 2011-09-01 |
WO2005088692A1 (ja) | 2005-09-22 |
JP2009239304A (ja) | 2009-10-15 |
KR20060095955A (ko) | 2006-09-05 |
US20080153309A1 (en) | 2008-06-26 |
CN100452315C (zh) | 2009-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4361932B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
KR100961594B1 (ko) | 기판 처리 장치 | |
JP4354987B2 (ja) | 基板処理装置 | |
JP4516969B2 (ja) | 基板処理装置および半導体デバイスの製造方法 | |
JP2004281853A (ja) | 基板処理装置 | |
JP4717495B2 (ja) | 基板処理システム | |
JP2009263764A (ja) | 半導体製造装置及び半導体装置の製造方法 | |
JP2012114200A (ja) | 基板処理装置 | |
JP2006237532A (ja) | 基板処理装置 | |
JP4242733B2 (ja) | 半導体装置の製造方法 | |
JP2007027425A (ja) | 基板処理装置 | |
JP4938805B2 (ja) | 基板処理装置 | |
JP2005243737A (ja) | 基板処理装置 | |
JP4434807B2 (ja) | 半導体装置の製造方法 | |
JP4267434B2 (ja) | 基板処理装置 | |
JP4509697B2 (ja) | 基板処理装置 | |
JP4634155B2 (ja) | 基板処理装置及び成膜方法 | |
JP2006269532A (ja) | 半導体デバイスの製造方法 | |
JP2010118441A (ja) | 半導体装置の製造方法 | |
JP2005167027A (ja) | 基板処理装置 | |
JP2005251775A (ja) | 基板処理装置 | |
JP2006066593A (ja) | 基板処理装置 | |
JP2005109002A (ja) | 基板処理装置 | |
JP2006216612A (ja) | 基板処理装置 | |
JP2006013204A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090710 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090804 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090813 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4361932 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120821 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130821 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140821 Year of fee payment: 5 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |