JP2009239304A - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims abstract description 158
- 230000006866 deterioration Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 44
- 238000006243 chemical reaction Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000001360 synchronised effect Effects 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
【解決手段】基板処理装置は、ウエハ200を処理する処理室201と、ウエハ200を回転させるボート回転機構267と、ウエハ200に対しガスを供給するガス供給部と、を有し、少なくとも2種のガスA、Bを交互に複数回供給し、ウエハ200上に所望の膜を形成する基板処理装置であって、ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期Tと、基板の回転周期Pとが、次の数式(1)を満たすように回転周期Pまたはガス供給周期Tを制御するコントローラ321を備える。
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
【選択図】図1
Description
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期Tと、基板の回転周期Pとが、
次の数式(1)を満たすように前記回転周期Pまたは前記ガス供給周期Tを制御する制御部を備えた基板処理装置が提供される。
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期Tと、基板の回転周期Pとが、
次の数式(1)を満たすように前記回転周期Pまたは前記ガス供給周期Tを制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法が提供される。
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
この式(1)を満たせば、例えばガス供給サイクル中のガスAの供給開始タイミングが、基板の回転位置と同期することを防ぐことができ(図2参照)、均一性を改善することが可能である。
このときのヒータ207温度はウエハ200が300〜600℃になるよう設定してある。NH3は反応温度が高いため、上記ウエハ温度では反応しないので、プラズマ励起することにより活性種としてから流すようにしており、このためウエハ温度は設定した低い温度範囲のままで行える。
以上で1cycleとなり、これら(1)〜(9)を繰り返すことにより、成膜を進行させる。
カセット移載機114等の搬送動作は、搬送制御手段124により制御される。
その結果、本発明は、ガスを使用して半導体Siウエハ等の半導体基板を処理する基板処理装置および半導体装置の製造方法に特に好適に利用できる。
101 筐体
105 カセットステージ
109 カセット棚
110 予備カセット棚
112 ウエハ移載機
113 移載エレベータ
114 カセット移載機
115 カセットエレベータ
116 炉口シャッタ
118 クリーンユニット
121 ボートエレベータ
122 昇降部材
123 移載棚
124 搬送制御手段
200 ウエハ
201 処理室
202 処理炉
203 反応管
207 ヒータ
217 ボート
218 石英キャップ
219 シールキャップ
220 Oリング
224 プラズマ生成領域
231 ガス排気管
232a 第1のガス供給管
232b 第2のガス供給管
233 ノズル
237 バッファ室
241a 第1のマスフローコントローラ
241b 第2のマスフローコントローラ
243 真空排気手段
243a 第1のバルブ
243b 第2のバルブ
243c 第3のバルブ
243d 第4のバルブ
246 真空ポンプ
248a 第1のガス供給孔
248b 第2のガス供給孔
248c 第3のガス供給孔
249 ガス供給部
267 ボート回転機構
269 第1の棒状電極
270 第2の棒状電極
272 整合器
273 高周波電源
275 電極保護管
321 コントローラ
Claims (4)
- 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期Tと、基板の回転周期Pとが、
次の数式(1)を満たすように前記回転周期Pまたは前記ガス供給周期Tを制御する制御部を備えた基板処理装置。
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。) - 前記制御部は、少なくともn≦10の時に、前記式(1)を満足させるように前記回転周期Pまたは前記ガス供給周期Tを制御する請求項1記載の基板処理装置。
- 前記制御部は、前記基板上への成膜のため前記ガスが供給される全ての時間において、前記式(1)を満足させるように前記回転周期Pまたは前記ガス供給周期Tを制御する請求項1記載の基板処理装置。
- 基板を処理する処理室と、
前記基板を回転させる基板回転機構と、
前記基板に対しガスを供給するガス供給部と、を有し、
少なくとも2種のガスA、Bを交互に複数回供給し、前記基板上に所望の膜を形成する基板処理装置であって、
ガスAを流してから次にガスAを流すまでの時間で規定されるガス供給周期Tと、基板の回転周期Pとが、
次の数式(1)を満たすように前記回転周期Pまたは前記ガス供給周期Tを制御する制御部を備えた基板処理装置を用いて前記基板を処理する工程を備える半導体装置の製造方法。
|mP−nT|>≠0(n、mは任意の自然数) (1)
(>≠0は真に0より大きいということを表し、||は絶対値を表す。)
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JP2009163570A Active JP5027850B2 (ja) | 2004-03-12 | 2009-07-10 | 基板処理装置および半導体装置の製造方法 |
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US (3) | US7950348B2 (ja) |
JP (2) | JP4361932B2 (ja) |
KR (1) | KR100674467B1 (ja) |
CN (1) | CN100452315C (ja) |
TW (1) | TWI334450B (ja) |
WO (1) | WO2005088692A1 (ja) |
Cited By (2)
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US9136148B2 (en) | 2010-05-20 | 2015-09-15 | Tokyo Electron Limited | Substrate processing apparatus, control device thereof, and control method thereof |
US9200364B2 (en) | 2010-03-19 | 2015-12-01 | Tokyo Electron Limited | Film forming apparatus, film forming method, method for optimizing rotational speed, and storage medium |
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TWI334450B (en) * | 2004-03-12 | 2010-12-11 | Hitachi Int Electric Inc | Wafer treatment device and the manufacturing method of semiconductor device |
US7740704B2 (en) * | 2004-06-25 | 2010-06-22 | Tokyo Electron Limited | High rate atomic layer deposition apparatus and method of using |
JP4734317B2 (ja) * | 2005-02-17 | 2011-07-27 | 株式会社日立国際電気 | 基板処理方法および基板処理装置 |
KR100961594B1 (ko) | 2006-05-01 | 2010-06-04 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
JP4228008B2 (ja) | 2006-08-23 | 2009-02-25 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP5273936B2 (ja) * | 2007-04-02 | 2013-08-28 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US8425977B2 (en) | 2008-09-29 | 2013-04-23 | Applied Materials, Inc. | Substrate processing chamber with off-center gas delivery funnel |
JP5861762B2 (ja) * | 2010-03-19 | 2016-02-16 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体 |
JP5805461B2 (ja) * | 2010-10-29 | 2015-11-04 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5794194B2 (ja) * | 2012-04-19 | 2015-10-14 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6027490B2 (ja) * | 2013-05-13 | 2016-11-16 | 東京エレクトロン株式会社 | ガスを供給する方法、及びプラズマ処理装置 |
KR102264257B1 (ko) | 2014-12-30 | 2021-06-14 | 삼성전자주식회사 | 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법 |
CN106048560A (zh) * | 2016-06-24 | 2016-10-26 | 浙江晶科能源有限公司 | 一种硅片ald镀膜方法和装置 |
JP6919498B2 (ja) * | 2017-10-27 | 2021-08-18 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN110565072B (zh) * | 2018-06-05 | 2023-06-09 | 长鑫存储技术有限公司 | 一种原子层沉积方法 |
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- 2005-03-11 JP JP2006510994A patent/JP4361932B2/ja active Active
- 2005-03-11 US US10/592,348 patent/US7950348B2/en active Active
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- 2005-03-11 WO PCT/JP2005/004299 patent/WO2005088692A1/ja active Application Filing
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US9200364B2 (en) | 2010-03-19 | 2015-12-01 | Tokyo Electron Limited | Film forming apparatus, film forming method, method for optimizing rotational speed, and storage medium |
US9136148B2 (en) | 2010-05-20 | 2015-09-15 | Tokyo Electron Limited | Substrate processing apparatus, control device thereof, and control method thereof |
Also Published As
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US20150050818A1 (en) | 2015-02-19 |
JPWO2005088692A1 (ja) | 2008-01-31 |
CN100452315C (zh) | 2009-01-14 |
US20110212626A1 (en) | 2011-09-01 |
CN1842899A (zh) | 2006-10-04 |
TWI334450B (en) | 2010-12-11 |
US8901011B2 (en) | 2014-12-02 |
US7950348B2 (en) | 2011-05-31 |
JP5027850B2 (ja) | 2012-09-19 |
WO2005088692A1 (ja) | 2005-09-22 |
KR100674467B1 (ko) | 2007-01-25 |
TW200600606A (en) | 2006-01-01 |
KR20060095955A (ko) | 2006-09-05 |
US20080153309A1 (en) | 2008-06-26 |
JP4361932B2 (ja) | 2009-11-11 |
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