KR20050077728A - 저저항 폴리머 매트릭스 퓨즈장치 및 방법 - Google Patents
저저항 폴리머 매트릭스 퓨즈장치 및 방법 Download PDFInfo
- Publication number
- KR20050077728A KR20050077728A KR1020040111919A KR20040111919A KR20050077728A KR 20050077728 A KR20050077728 A KR 20050077728A KR 1020040111919 A KR1020040111919 A KR 1020040111919A KR 20040111919 A KR20040111919 A KR 20040111919A KR 20050077728 A KR20050077728 A KR 20050077728A
- Authority
- KR
- South Korea
- Prior art keywords
- fuse
- fuse element
- element layer
- layer
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 83
- 229920000642 polymer Polymers 0.000 title description 3
- 239000011159 matrix material Substances 0.000 title description 2
- 229920006254 polymer film Polymers 0.000 claims abstract description 42
- 239000011888 foil Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 60
- 238000009413 insulation Methods 0.000 claims description 49
- 229920001721 polyimide Polymers 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 27
- 230000001070 adhesive effect Effects 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000004642 Polyimide Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 230000017525 heat dissipation Effects 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 8
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 7
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 7
- 230000002000 scavenging effect Effects 0.000 claims description 6
- 239000002313 adhesive film Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000013464 silicone adhesive Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 34
- 238000010791 quenching Methods 0.000 abstract description 2
- 230000000171 quenching effect Effects 0.000 abstract description 2
- 238000003855 Adhesive Lamination Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- 230000008018 melting Effects 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 239000011889 copper foil Substances 0.000 description 10
- 238000003475 lamination Methods 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- -1 polyethylene naphthalenedicarboxylate Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010923 batch production Methods 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000615 nonconductor Substances 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000003466 anti-cipated effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H69/00—Apparatus or processes for the manufacture of emergency protective devices
- H01H69/02—Manufacture of fuses
- H01H69/022—Manufacture of fuses of printed circuit fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/0039—Means for influencing the rupture process of the fusible element
- H01H85/0047—Heating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/046—Fuses formed as printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
- H01H2085/0414—Surface mounted fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/0039—Means for influencing the rupture process of the fusible element
- H01H85/0047—Heating means
- H01H85/006—Heat reflective or insulating layer on the casing or on the fuse support
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Fuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/767,027 | 2004-01-29 | ||
| US10/767,027 US7436284B2 (en) | 2002-01-10 | 2004-01-29 | Low resistance polymer matrix fuse apparatus and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050077728A true KR20050077728A (ko) | 2005-08-03 |
Family
ID=34274907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040111919A Withdrawn KR20050077728A (ko) | 2004-01-29 | 2004-12-24 | 저저항 폴리머 매트릭스 퓨즈장치 및 방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7436284B2 (enExample) |
| JP (1) | JP2005243621A (enExample) |
| KR (1) | KR20050077728A (enExample) |
| CN (1) | CN1649065B (enExample) |
| DE (1) | DE102004063035A1 (enExample) |
| FR (1) | FR2869157A1 (enExample) |
| GB (1) | GB2410627B8 (enExample) |
| IT (1) | ITTO20050034A1 (enExample) |
| TW (1) | TW200537539A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101043832B1 (ko) * | 2008-03-11 | 2011-06-22 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7385475B2 (en) * | 2002-01-10 | 2008-06-10 | Cooper Technologies Company | Low resistance polymer matrix fuse apparatus and method |
| DE10355282A1 (de) * | 2003-11-18 | 2005-06-16 | E.G.O. Elektro-Gerätebau GmbH | Verfahren zur Herstellung einer Übertemperatursicherung und Übertemperatursicherung |
| DE102004033251B3 (de) * | 2004-07-08 | 2006-03-09 | Vishay Bccomponents Beyschlag Gmbh | Schmelzsicherung für einem Chip |
| JP4716099B2 (ja) * | 2005-09-30 | 2011-07-06 | 三菱マテリアル株式会社 | チップ型ヒューズの製造方法 |
| US20070075822A1 (en) * | 2005-10-03 | 2007-04-05 | Littlefuse, Inc. | Fuse with cavity forming enclosure |
| US8368502B2 (en) * | 2006-03-16 | 2013-02-05 | Panasonic Corporation | Surface-mount current fuse |
| KR100773324B1 (ko) * | 2006-04-28 | 2007-11-05 | 단국대학교 산학협력단 | 블레이드형 퓨즈 |
| JP2008311161A (ja) * | 2007-06-18 | 2008-12-25 | Sony Chemical & Information Device Corp | 保護素子 |
| US20090009281A1 (en) * | 2007-07-06 | 2009-01-08 | Cyntec Company | Fuse element and manufacturing method thereof |
| US9190235B2 (en) * | 2007-12-29 | 2015-11-17 | Cooper Technologies Company | Manufacturability of SMD and through-hole fuses using laser process |
| JP4623161B2 (ja) | 2008-08-07 | 2011-02-02 | 株式会社デンソー | 液晶表示装置 |
| DE102010002377A1 (de) * | 2009-02-27 | 2010-11-18 | Ceramtec Ag | Elektrische Sicherung |
| US8203420B2 (en) * | 2009-06-26 | 2012-06-19 | Cooper Technologies Company | Subminiature fuse with surface mount end caps and improved connectivity |
| TWI484520B (zh) * | 2013-07-17 | 2015-05-11 | Cyntec Co Ltd | 保護元件及過電流及過電壓保護模組 |
| JP5260592B2 (ja) * | 2010-04-08 | 2013-08-14 | デクセリアルズ株式会社 | 保護素子、バッテリ制御装置、及びバッテリパック |
| EP2408277B1 (de) * | 2010-07-16 | 2016-02-17 | Schurter AG | Sicherungselement |
| US8421579B2 (en) * | 2010-10-12 | 2013-04-16 | Hung-Chih Chiu | Current protection device |
| US9847203B2 (en) | 2010-10-14 | 2017-12-19 | Avx Corporation | Low current fuse |
| US8971006B2 (en) | 2011-02-04 | 2015-03-03 | Denso Corporation | Electronic control device including interrupt wire |
| US8780518B2 (en) | 2011-02-04 | 2014-07-15 | Denso Corporation | Electronic control device including interrupt wire |
| JP2012164755A (ja) | 2011-02-04 | 2012-08-30 | Denso Corp | 電子制御装置 |
| JP5583042B2 (ja) | 2011-02-04 | 2014-09-03 | 株式会社デンソー | 電子制御装置 |
| JP2012164756A (ja) * | 2011-02-04 | 2012-08-30 | Denso Corp | 電子制御装置 |
| DE102011113862A1 (de) * | 2011-09-22 | 2013-03-28 | Auto-Kabel Managementgesellschaft Mbh | Elektrische Schmelzsicherung |
| EP2573790A1 (en) * | 2011-09-26 | 2013-03-27 | Siemens Aktiengesellschaft | Fuse element |
| WO2013173594A1 (en) * | 2012-05-16 | 2013-11-21 | Littelfuse, Inc. | Low-current fuse stamping method |
| EP2862192B1 (en) * | 2012-06-13 | 2016-05-18 | ABB Technology Ltd. | Bypass switch assembly |
| TWI628688B (zh) * | 2012-08-31 | 2018-07-01 | 太谷電子日本合同公司 | 保護元件、電氣裝置、2次電池單元及墊圈 |
| JP5561382B2 (ja) * | 2013-01-09 | 2014-07-30 | 株式会社デンソー | 電子制御装置 |
| JP5939311B2 (ja) * | 2013-01-11 | 2016-06-22 | 株式会社村田製作所 | ヒューズ |
| US9460882B2 (en) * | 2013-03-14 | 2016-10-04 | Littelfuse, Inc. | Laminated electrical fuse |
| CA2967555A1 (en) * | 2014-11-13 | 2016-05-19 | Soc Corporation | Chip fuse manufacturing method and chip fuse |
| JP6572971B2 (ja) | 2015-04-22 | 2019-09-11 | 株式会社村田製作所 | 電子装置、及び電子装置の製造方法 |
| JP2017073373A (ja) * | 2015-10-09 | 2017-04-13 | デクセリアルズ株式会社 | ヒューズ素子 |
| JP6452001B2 (ja) * | 2016-06-08 | 2019-01-16 | 株式会社村田製作所 | 電子装置、及び電子装置の製造方法 |
| JP6782122B2 (ja) * | 2016-08-24 | 2020-11-11 | デクセリアルズ株式会社 | 保護素子、回路モジュール及び保護素子の製造方法 |
| DE102016220058A1 (de) * | 2016-10-14 | 2018-04-19 | Continental Automotive Gmbh | Schaltungsanordnung mit einer Schmelzsicherung, Kraftfahrzeug und Verfahren zum Herstellen der Schaltungsanordnung |
| US11355298B2 (en) * | 2018-11-21 | 2022-06-07 | Littelfuse, Inc. | Method of manufacturing an open-cavity fuse using a sacrificial member |
| WO2020135914A1 (de) | 2018-12-27 | 2020-07-02 | Schurter Ag | Schmelzsicherung |
| JP7231527B2 (ja) * | 2018-12-28 | 2023-03-01 | ショット日本株式会社 | 保護素子用ヒューズ素子およびそれを利用した保護素子 |
| US12048068B2 (en) * | 2019-01-22 | 2024-07-23 | Amogreentech Co., Ltd. | Heating element having fuse function and heater unit comprising same |
| US11404372B2 (en) * | 2019-05-02 | 2022-08-02 | KYOCERA AVX Components Corporation | Surface-mount thin-film fuse having compliant terminals |
| US20200373109A1 (en) * | 2019-05-21 | 2020-11-26 | Rosemount Aerospace, Inc. | Fuse assembly and method of making |
| DE202019103963U1 (de) * | 2019-07-18 | 2020-10-20 | Tridonic Gmbh & Co Kg | Leiterplatte mit Schutzelement |
| CN114144859B (zh) * | 2019-09-13 | 2025-06-27 | 赤多尼科两合股份有限公司 | 印制导线保险装置 |
| US11217415B2 (en) * | 2019-09-25 | 2022-01-04 | Littelfuse, Inc. | High breaking capacity chip fuse |
| US10861665B1 (en) * | 2019-10-04 | 2020-12-08 | Rosemount Aerospace Inc. | Inert environment fusible links |
| KR102450313B1 (ko) * | 2020-09-23 | 2022-10-04 | 주식회사 유라코퍼레이션 | 연성 인쇄 회로 기판 및 그의 제조 방법 |
| TWI731801B (zh) * | 2020-10-12 | 2021-06-21 | 功得電子工業股份有限公司 | 保護元件及其製作方法 |
| US11532452B2 (en) * | 2021-03-25 | 2022-12-20 | Littelfuse, Inc. | Protection device with laser trimmed fusible element |
| JP7729689B2 (ja) | 2021-10-28 | 2025-08-26 | エルジー エナジー ソリューション リミテッド | パターンヒューズ及びその製造方法 |
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| US7570148B2 (en) | 2002-01-10 | 2009-08-04 | Cooper Technologies Company | Low resistance polymer matrix fuse apparatus and method |
-
2004
- 2004-01-29 US US10/767,027 patent/US7436284B2/en not_active Expired - Fee Related
- 2004-12-13 TW TW093138647A patent/TW200537539A/zh unknown
- 2004-12-24 KR KR1020040111919A patent/KR20050077728A/ko not_active Withdrawn
- 2004-12-28 DE DE102004063035A patent/DE102004063035A1/de not_active Withdrawn
-
2005
- 2005-01-21 IT IT000034A patent/ITTO20050034A1/it unknown
- 2005-01-25 GB GB0501603A patent/GB2410627B8/en not_active Expired - Fee Related
- 2005-01-27 JP JP2005020078A patent/JP2005243621A/ja active Pending
- 2005-01-28 FR FR0500908A patent/FR2869157A1/fr not_active Withdrawn
- 2005-01-31 CN CN2005100061576A patent/CN1649065B/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101043832B1 (ko) * | 2008-03-11 | 2011-06-22 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| US8373201B2 (en) | 2008-03-11 | 2013-02-12 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2869157A1 (fr) | 2005-10-21 |
| GB2410627A (en) | 2005-08-03 |
| GB2410627A8 (en) | 2008-10-01 |
| GB2410627B (en) | 2007-12-27 |
| CN1649065A (zh) | 2005-08-03 |
| TW200537539A (en) | 2005-11-16 |
| US20040184211A1 (en) | 2004-09-23 |
| DE102004063035A1 (de) | 2005-08-18 |
| CN1649065B (zh) | 2010-10-27 |
| JP2005243621A (ja) | 2005-09-08 |
| US7436284B2 (en) | 2008-10-14 |
| GB0501603D0 (en) | 2005-03-02 |
| HK1075130A1 (en) | 2005-12-02 |
| GB2410627B8 (en) | 2008-10-01 |
| ITTO20050034A1 (it) | 2005-07-30 |
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