KR20010043126A - 유전 상수 κ가 낮은 무기/유기 혼성 박막 및 이를제조하는 방법 - Google Patents
유전 상수 κ가 낮은 무기/유기 혼성 박막 및 이를제조하는 방법 Download PDFInfo
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- KR20010043126A KR20010043126A KR1020007012019A KR20007012019A KR20010043126A KR 20010043126 A KR20010043126 A KR 20010043126A KR 1020007012019 A KR1020007012019 A KR 1020007012019A KR 20007012019 A KR20007012019 A KR 20007012019A KR 20010043126 A KR20010043126 A KR 20010043126A
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- Prior art keywords
- thin film
- precursor
- group
- dielectric thin
- dielectric
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 157
- 239000002243 precursor Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 13
- 230000004580 weight loss Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000011368 organic material Substances 0.000 claims abstract description 8
- 239000011147 inorganic material Substances 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 125000001905 inorganic group Chemical group 0.000 claims abstract description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract 3
- 125000004122 cyclic group Chemical group 0.000 claims description 32
- 125000001931 aliphatic group Chemical group 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical group C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 17
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000002367 halogens Chemical class 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910008072 Si-N-Si Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- -1 siloxane, fluorosiloxane Chemical class 0.000 claims description 5
- VSIKJPJINIDELZ-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octakis-phenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VSIKJPJINIDELZ-UHFFFAOYSA-N 0.000 claims description 3
- VCYDUTCMKSROID-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VCYDUTCMKSROID-UHFFFAOYSA-N 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 6
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 229940073561 hexamethyldisiloxane Drugs 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- GUHKMHMGKKRFDT-UHFFFAOYSA-N 1785-64-4 Chemical compound C1CC(=C(F)C=2F)C(F)=C(F)C=2CCC2=C(F)C(F)=C1C(F)=C2F GUHKMHMGKKRFDT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/314—Inorganic layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (50)
- 유전 상수가 낮은 반도체 또는 집적 회로 상의 유전체 박막으로서,사실상 무기 물질 기로 이루어진 주쇄 구조 및주쇄 구조에 결합하여 무기 및 유기 물질의 혼성체를 형성하므로써 유전 상수가 4.0 미만이고, 질량 손실이 질소 하에 400℃에서 시간 당 2% 미만인 박막을 제공하는 유기 사이드 기를 포함하는 유전체 박막.
- 제 1 항에 있어서, 유전 상수가 3.0 미만임을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 유전체 박막이 다중층으로 형성되며, 다중층에서 하나 이상의 이산화규소층이 원위치에서 유전체 박막의 상부 및/또는 하부에 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 주쇄 구조가 Si-O-Si 기의 3차원의 가교된 매트릭스로 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 주쇄 구조가 Si-N-Si 기의 3차원의 가교된 매트릭스로 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 주쇄 구조가 Si-O-Si 기로 이루어지며, 플라즈마 화학 증기 증착에 의해 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 박막이 유기규소 전구체를 사용하여 플라즈마 화학 증착에 의해 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 박막이 플라즈마 화학 증착에 의해 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 박막이 유기규소 전구체를 사용하여 화학 증착에 의해 형성됨을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 주쇄 구조가 추가로 고리형 Si-O-Si 기 및 사슬로 이루어짐을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 유기 사이드기가 사실상 C-C 결합을 나타내지 않음을 특징으로 하는 유전체 박막.
- 제 10 항에 있어서, 고리형 기가 환, 구, 입방체, 또는 이들의 조합으로 이루어짐을 특징으로 하는 유전체 박막.
- 제 10 항에 있어서, 무기 사슬에서의 Si 대 고리형 Si-O-Si 기에서의 Si의 비가 약 10:1 내지 0.1:1의 범위내에 있음을 특징으로 하는 유전체 박막.
- 제 1 항에 있어서, 유기 사이드 기가 -H, -CH3, -F, -C2H5, -CF3, -C2F5, -C6H5, -C6F5, -CF2CF3및 CH2CF3로 이루어진 군으로부터 선택됨을 특징으로 하는 유전체 박막.
- 반도체 또는 집적 회로 상에 유전 상수가 낮은 유전체 박막을 제조하는 방법으로서,하나 이상의 유기규소 전구체를 제공하는 단계 및전구체가 반응하여 기판 표면상의 유전체 박막에 증착되는 화학 증착에 의해 증착시키는 단계를 포함하며, 유전체 박막이 사실상 무기 기로 이루어진 주쇄 구조 및 주쇄 구조에 결합된 유기 사이드 기를 가져 무기 물질과 유기 물질의 혼성체를 형성하므로써 유전 상수가 4.0 미만이고, 중량 손실이 질소 하에 400℃에서 시간당 2% 미만인 박막을 제공함을 특징으로 하는 방법.
- 제 15 항에 있어서, 증착 단계가 플라즈마 화학 증착에 의해 수행됨을 특징으로 하는 방법.
- 제 15 항에 있어서, 유전 상수가 3.0 미만임을 특징으로 하는 방법.
- 제 15 항에 있어서, 주쇄 구조가 추가로 사실상 고리형 Si-O-Si 기 및 사슬로 이루어짐을 특징으로 하는 방법.
- 제 15 항에 있어서, 주쇄 구조가 추가로 사실상 고리형 Si-N-Si 기 및 무기 사슬로 이루어짐을 특징으로 하는 방법.
- 제 18 항에 있어서, 고리형 기가 환, 구, 입방체, 또는 이들의 조합으로 이루어짐을 특징으로 하는 방법.
- 제 15 항에 있어서, 전구체가 고리형 유기규소임을 특징으로 하는 방법.
- 제 15 항에 있어서, 전구체가 실록산, 플루오로실록산, 시클로실록산, 불소 함유 시클로실록산, 유기실라잔, 플루오로실라잔, 고리형 유기실라잔, 시클로플루오로실라잔 및 이들의 혼합물로 이루어진 군으로 부터 선택됨을 특징으로 하는 방법.
- 제 15 항에 있어서, 유기 사이드 기가 -H, -CH3, -F, -C2H5, -CF3, -C2F5, -C6H5, -C6F5, -CF2CF3및 CH2CF3로 이루어진 군으로부터 선택됨을 특징으로 하는 방법.
- 제 15 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:RnSi(OSi)mX(2m-n+4)상기 식에서,전구체는 선형이거나 분지형이고,n은 0 내지 (2m + 4)이고,m은 0 내지 4이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 15 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:Rn(SiO)mX(2m-n)상기 식에서,n은 0 내지 2m이고,m은 3 내지 10이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 15 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:RnSi(NSi)mX(3m-n+4)상기 식에서,전구체는 선형 또는 분지형이고,n은 0 내지 (3m+4)이고,m은 1 내지 4이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 15 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:Rn(SiN)mX(3m-n)상기 식에서,n은 0 내지 3m이고,m은 3 내지 10이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 15 항에 있어서, 전구체가 옥타메틸시클로테트라실록산임을 특징으로 하는 방법.
- 제 15 항에 있어서, 유기 사이드 기의 탄소 대 탄소 결합이 최소화됨을 특징으로 하는 방법.
- 제 15 항에 있어서, 전구체와 혼합된 산소 가스를 제공하는 단계를 추가로 포함하는 방법.
- 제 15 항에 있어서, 하나 이상의 이산화규소 층을 원위치에서 유전체 박막의 상부 및/또는 하부에 증착시켜 다중층을 갖는 박막을 형성시키는 단계를 추가로 포함하는 방법.
- 플라즈마 화학 증착에 의해 반도체 또는 집적 회로 상에 낮은 κ 유전체 박막을 증착시키는 방법으로서,공정 챔버내에 기판을 배치시키는 단계;하나 이상의 유기규소 전구체를 공정 챔버에 주입시키는 단계;플라즈마 챔버에 전력을 인가하여 플라즈마를 생성시키는 단계 및유전체 박막을 기판 표면 상에 증착시키는 단계를 포함하며, 유전체 박막이 사실상 무기 기로 이루어진 주쇄 구조 및 주쇄 구조에 결합된 유기 사이드 기를 가져 무기 물질과 유기 물질의 혼성체를 형성하므로써 유전 상수가 4.0 미만이고, 중량 손실이 질소 하에 400℃에서 시간당 2% 미만인 박막을 제공함을 특징으로 하는 방법.
- 제 32 항에 있어서, 유전체 박막의 유전 상수가 3.0 미만임을 특징으로 하는 방법.
- 제 32 항에 있어서, 전구체를 플라즈마 조건 하에서 플라즈마에 노출시키므로써 유전체 박막 구조가 부분적으로 전구체의 구조를 보유함을 특징으로 하는 방법.
- 제 32 항에 있어서, 전구체가 고리형 유기규소임을 특징으로 하는 방법.
- 제 32 항에 있어서, 전구체가 실록산, 플루오로실록산, 시클로실록산, 불소 함유 시클로실록산, 유기실라잔, 플루오로실라잔, 고리형 유기실라잔, 시클로플루오로실라잔 및 이들의 혼합물로 이루어진 군으로 부터 선택됨을 특징으로 하는 방법.
- 제 32 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:Rn(SiO)mX(2m-n)상기 식에서,n은 0 내지 2m이고,m은 3 내지 10이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 32 항에 있어서, 전구체가 하기 화학식을 가짐을 특징으로 하는 방법:Rn(SiN)mX(3m-n)상기 식에서,n은 0 내지 3m이고,X는 H 및 할로겐으로 이루어진 군으로부터 선택되며,R은 지방족, 올레핀계 및 방향족 탄화수소, 및 지방족, 올레핀계 및 방향족 플루오로카본으로 이루어진 군으로부터 선택된다.
- 제 32 항에 있어서, 전구체가 옥타메틸시클로테트라실록산임을 특징으로 하는 방법.
- 제 32 항에 있어서, 플라즈마 챔버가 플라즈마 공급원을 포함하고, 전구체를 플라즈마에 200 내지 20,000W/ft3범위의 전력 밀도로 노출시키는 단계를 추가로 포함하는 방법.
- 제 32 항에 있어서, 하나 이상의 이산화규소층을 원위치에서 유전체 박막의 상부 및/또는 저부에 증착시켜 다중층을 갖는 박막을 형성시키는 단계를 추가로 포함하는 방법.
- 제 32 항에 있어서, 유기 사이드 기의 탄소 대 탄소 결합이 최소화됨을 특징으로 하는 방법.
- 제 32 항에 있어서, 전구체와 혼합된 산소 가스를 제공하는 단계를 추가로 포함하는 방법.
- 제 32 항에 있어서, 희석 가스를 반응기에 도입하는 단계를 추가로 포함하는 방법.
- 제 32 항에 있어서, 헬륨을 반응기에 도입하는 단계를 추가로 포함하는 방법.
- 제 32 항에 있어서, 무기 사슬에서의 Si 대 고리형 Si-O-Si 기에서의 Si의 비가 약 10:1 내지 0.1:1의 범위내에 있음을 특징으로 하는 방법.
- 제 32 항에 있어서, 유전체 박막이 사실상 고리형 및 선형 Si-N-Si 기로 이루어진 주쇄 구조 및 주쇄 구조에 결합된 유기 사이드 기를 가짐을 특징으로 하는 방법.
- 제 32 항에 있어서, 고리형 기가 환, 구, 입방체, 또는 이들의 조합으로 이루어짐을 특징으로 하는 방법.
- 제 32 항에 있어서, 유기규소 전구체가 옥타메틸시클로테트라실록산(OMCTS), 헥사메틸시클로트리실록산, 헥사페닐시클로트리실록산, 옥타페닐시클로테트라실록산, 1,3,5-트리메틸-1,3,5-트리스-3,3,3-트리플루오로프로필시클로트리실록산, 불소 함유 시클로실록산 및 이들의 조합물로 이루어진 군으로부터 선택된 고리형 실록산임을 특징으로 하는 방법.
- 제 15 항에 있어서, 유기규소 전구체가 옥타메틸시클로테트라실록산(OMCTS), 헥사메틸시클로트리실록산, 헥사페닐시클로트리실록산, 옥타페닐시클로테트라실록산, 1,3,5-트리메틸-1,3,5-트리스-3,3,3-트리플루오로프로필시클로트리실록산, 불소 함유 시클로실록산 및 이들의 조합물로 이루어진 군으로부터 선택된 고리형 실록산임을 특징으로 하는 방법.
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US6660391B1 (en) | 2003-12-09 |
EP1089874A1 (en) | 2001-04-11 |
TW476705B (en) | 2002-02-21 |
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