KR19980070422A - 실리콘 단결정 제조방법 및 그 방법에 사용되는 종자 결정 - Google Patents

실리콘 단결정 제조방법 및 그 방법에 사용되는 종자 결정 Download PDF

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Publication number
KR19980070422A
KR19980070422A KR1019980000355A KR19980000355A KR19980070422A KR 19980070422 A KR19980070422 A KR 19980070422A KR 1019980000355 A KR1019980000355 A KR 1019980000355A KR 19980000355 A KR19980000355 A KR 19980000355A KR 19980070422 A KR19980070422 A KR 19980070422A
Authority
KR
South Korea
Prior art keywords
seed
crystal
silicon
single crystal
melt
Prior art date
Application number
KR1019980000355A
Other languages
English (en)
Korean (ko)
Inventor
아베타까오
기무라마사노리
Original Assignee
와다다다시
신에쯔한도타이콤파니리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와다다다시, 신에쯔한도타이콤파니리미티드 filed Critical 와다다다시
Publication of KR19980070422A publication Critical patent/KR19980070422A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019980000355A 1997-01-17 1998-01-09 실리콘 단결정 제조방법 및 그 방법에 사용되는 종자 결정 KR19980070422A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-17687 1997-01-17
JP9017687A JPH10203898A (ja) 1997-01-17 1997-01-17 シリコン単結晶の製造方法および種結晶

Publications (1)

Publication Number Publication Date
KR19980070422A true KR19980070422A (ko) 1998-10-26

Family

ID=11950741

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980000355A KR19980070422A (ko) 1997-01-17 1998-01-09 실리콘 단결정 제조방법 및 그 방법에 사용되는 종자 결정

Country Status (7)

Country Link
US (1) US5911822A (ja)
EP (1) EP0854211B1 (ja)
JP (1) JPH10203898A (ja)
KR (1) KR19980070422A (ja)
CN (1) CN1149306C (ja)
DE (1) DE69801381T2 (ja)
TW (1) TW483954B (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0879903B1 (en) * 1997-05-21 2001-12-12 Shin-Etsu Handotai Company Limited Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon monocrystal through use of the seed crystal
JPH1160379A (ja) * 1997-06-10 1999-03-02 Nippon Steel Corp 無転位シリコン単結晶の製造方法
JP3684769B2 (ja) * 1997-06-23 2005-08-17 信越半導体株式会社 シリコン単結晶の製造方法および保持する方法
JP3402210B2 (ja) * 1997-12-27 2003-05-06 信越半導体株式会社 シリコン単結晶の製造方法
TW538445B (en) 1998-04-07 2003-06-21 Shinetsu Handotai Kk Silicon seed crystal and method for producing silicon single crystal
JP2000063197A (ja) * 1998-08-07 2000-02-29 Shin Etsu Handotai Co Ltd 種結晶及び単結晶の製造方法
JP3598972B2 (ja) * 2000-12-20 2004-12-08 三菱住友シリコン株式会社 シリコン単結晶の製造方法
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
EP1498517B1 (en) * 2002-04-24 2016-08-31 Shin-Etsu Handotai Co., Ltd. Method of manufacturing silicon single crystal
JP4215249B2 (ja) 2003-08-21 2009-01-28 コバレントマテリアル株式会社 シリコン種結晶およびシリコン単結晶の製造方法
JP4806975B2 (ja) * 2005-06-20 2011-11-02 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
JP5217981B2 (ja) * 2008-12-04 2013-06-19 信越半導体株式会社 シリコン単結晶の製造方法
KR101022918B1 (ko) 2009-02-18 2011-03-16 주식회사 엘지실트론 무네킹 공정을 이용한 단결정 제조 방법
JP5660020B2 (ja) 2011-12-16 2015-01-28 信越半導体株式会社 シリコン単結晶の製造方法
US9102035B2 (en) * 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
JP5683517B2 (ja) * 2012-03-16 2015-03-11 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコン単結晶の製造方法
CN103397384B (zh) * 2013-07-11 2016-01-06 东南大学 一种用于生长硼酸铯锂单晶的籽晶及其应用
CN104711674B (zh) * 2013-12-09 2017-06-06 有研半导体材料有限公司 一种减少直拉单晶硅内部微气孔密度的方法
WO2016196577A1 (en) 2015-06-05 2016-12-08 Apple Inc. Call management between multiple user devices
CN106222738A (zh) * 2016-08-24 2016-12-14 包头市山晟新能源有限责任公司 一种n型单晶硅生长用籽晶的制备方法
CN109338462B (zh) * 2018-12-07 2023-12-01 内蒙古中环晶体材料有限公司 一种直拉单晶用变径籽晶及引晶方法
JP6614380B1 (ja) 2019-03-20 2019-12-04 信越半導体株式会社 単結晶製造装置
CN112720887A (zh) * 2020-12-18 2021-04-30 扬州申威光电器材有限公司 一种籽晶的生产工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (ja) * 1990-08-20 1992-04-07 Fujitsu Ltd 単結晶成長方法
JPH04139092A (ja) * 1990-09-28 1992-05-13 Fujitsu Ltd シリコン単結晶の製造方法と種結晶
JPH05139880A (ja) * 1991-11-12 1993-06-08 Shin Etsu Handotai Co Ltd シリコン単結晶の種結晶
JPH08290994A (ja) * 1995-04-20 1996-11-05 Mitsubishi Materials Corp シリコン単結晶の種結晶
JPH08319192A (ja) * 1995-05-22 1996-12-03 Mitsubishi Materials Corp シリコン単結晶の育成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61132034A (ja) * 1984-11-28 1986-06-19 三菱電機株式会社 搬送保護継電装置
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
JPH09255485A (ja) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法および種結晶

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (ja) * 1990-08-20 1992-04-07 Fujitsu Ltd 単結晶成長方法
JPH04139092A (ja) * 1990-09-28 1992-05-13 Fujitsu Ltd シリコン単結晶の製造方法と種結晶
JPH05139880A (ja) * 1991-11-12 1993-06-08 Shin Etsu Handotai Co Ltd シリコン単結晶の種結晶
JPH08290994A (ja) * 1995-04-20 1996-11-05 Mitsubishi Materials Corp シリコン単結晶の種結晶
JPH08319192A (ja) * 1995-05-22 1996-12-03 Mitsubishi Materials Corp シリコン単結晶の育成方法

Also Published As

Publication number Publication date
CN1149306C (zh) 2004-05-12
EP0854211B1 (en) 2001-08-22
DE69801381D1 (de) 2001-09-27
CN1193054A (zh) 1998-09-16
TW483954B (en) 2002-04-21
US5911822A (en) 1999-06-15
JPH10203898A (ja) 1998-08-04
DE69801381T2 (de) 2002-05-23
EP0854211A1 (en) 1998-07-22

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