KR100582237B1 - 실리콘 단결정 제조방법 - Google Patents
실리콘 단결정 제조방법 Download PDFInfo
- Publication number
- KR100582237B1 KR100582237B1 KR1019990000600A KR19990000600A KR100582237B1 KR 100582237 B1 KR100582237 B1 KR 100582237B1 KR 1019990000600 A KR1019990000600 A KR 1019990000600A KR 19990000600 A KR19990000600 A KR 19990000600A KR 100582237 B1 KR100582237 B1 KR 100582237B1
- Authority
- KR
- South Korea
- Prior art keywords
- diameter
- single crystal
- necking
- crystal
- silicon
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
항목 번호 | 종결정의 형상,직경 A(mm) | 용해후의 직경 B(mm) | 용해후의 유지시간 a(분) | 네크부의 직경 C(mm) | 성공률(DF 화율)(%) |
1 | 뾰쪽선단을 갖는 실린더형,14 | 14 | 5 | 6.5 | 90 |
2 | 뾰쪽선단을 갖는 실린더형,14 | 14 | 10 | 6.5 | 40 |
3 | 뾰쪽선단을 갖는 실린더형,14 | 6.5 | 5 | 6.5 | 50 |
4 | 뾰쪽선단을 갖는 실린더형,14 | 6.5 | 10 | 6.5 | 30 |
5 | 실린더형, 14 | 14 | 5 | 6.5 | 20 |
Claims (4)
- 뾰쪽한 선단을 갖는 실리콘 종결정을 준비하고, 상기 실리콘 종결정의 일부분을 선단으로부터 사전에 설정된 두께를 갖는 일정위치까지 용해시키며, 그 후 테이퍼 형성된 네킹부와 네크부를 형성하기 위하여 네킹 작동을 수행하고, 후속적으로 직경을 증대시킨 후 단결정봉을 인발하는 실리콘 단결정 제조방법에 있어서, 상기 용해되어지는 부분은 선단으로부터, 상기 네크부 직경의 2배로 크게 형성된 위치이상 상기 종결정의 몸체 직경 위치 이하까지의 부분이고; 상기 네킹 작동은 초기 단계에 테이퍼진 네킹부의 최소 직경을 5mm 이상 상기 종결정 선단부의 용해되는 부분 이하까지 상기 네킹부의 직경을 점차적으로 감소시키면서 결정을 인발함으로서 형성되어지고, 그 후 네크부가 형성되며 후속적으로 상기 단결정봉이 직경을 증가시키면서 인발되어지는 방식으로 실행되는 것을 특징으로 하는 실리콘 단결정 제조방법.
- 제 1항에 있어서, 상기 종결정의 몸체 직경은 14mm 이상 20mm 이하인 것임을 특징으로 하는 실리콘 단결정 제조방법.
- 제 1항에 있어서, 상기 네킹은 실리콘 종결정의 일부분이 용액내에 용해된 후 5분이내에 개시됨을 특징으로 하는 실리콘 단결정 제조방법.
- 제 2항에 있어서, 상기 네킹은 실리콘 종결정의 일부분이 용액내에 용해된 후 5분이내에 개시됨을 특징으로 하는 실리콘 단결정 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10-17765 | 1998-01-14 | ||
JP01776598A JP3440802B2 (ja) | 1998-01-14 | 1998-01-14 | シリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990067864A KR19990067864A (ko) | 1999-08-25 |
KR100582237B1 true KR100582237B1 (ko) | 2006-05-24 |
Family
ID=11952813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990000600A KR100582237B1 (ko) | 1998-01-14 | 1999-01-12 | 실리콘 단결정 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20020000187A1 (ko) |
EP (1) | EP0930381B1 (ko) |
JP (1) | JP3440802B2 (ko) |
KR (1) | KR100582237B1 (ko) |
DE (1) | DE69912484T2 (ko) |
TW (1) | TW442843B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3440819B2 (ja) * | 1998-04-07 | 2003-08-25 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
TW538445B (en) * | 1998-04-07 | 2003-06-21 | Shinetsu Handotai Kk | Silicon seed crystal and method for producing silicon single crystal |
EP1498517B1 (en) * | 2002-04-24 | 2016-08-31 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing silicon single crystal |
NO326797B1 (no) * | 2005-06-10 | 2009-02-16 | Elkem As | Fremgangsmate og apparat for raffinering av smeltet materiale |
KR100848549B1 (ko) | 2006-12-18 | 2008-07-25 | 주식회사 실트론 | 실리콘 단결정 성장 방법 |
CN110528069B (zh) * | 2018-05-25 | 2021-07-06 | 隆基绿能科技股份有限公司 | 一种直拉硅单晶的自动调温方法 |
CN110396716B (zh) * | 2019-09-04 | 2021-05-18 | 内蒙古中环光伏材料有限公司 | 一种引晶引断后自动稳温工艺 |
FR3111360B1 (fr) * | 2020-06-15 | 2024-04-12 | Commissariat Energie Atomique | Procédé de fabrication d’une pièce par solidification d’un matériau semi-conducteur |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501172A (en) * | 1994-03-11 | 1996-03-26 | Shin-Etsu Handotai Co., Ltd. | Method of growing silicon single crystals |
US5578284A (en) * | 1995-06-07 | 1996-11-26 | Memc Electronic Materials, Inc. | Silicon single crystal having eliminated dislocation in its neck |
JP3016126B2 (ja) * | 1996-02-29 | 2000-03-06 | 住友金属工業株式会社 | 単結晶の引き上げ方法 |
JP2937112B2 (ja) * | 1996-03-13 | 1999-08-23 | 住友金属工業株式会社 | 単結晶引き上げ用種結晶及び該種結晶を用いた単結晶引き上げ方法 |
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1998
- 1998-01-14 JP JP01776598A patent/JP3440802B2/ja not_active Expired - Fee Related
- 1998-12-31 TW TW087122032A patent/TW442843B/zh not_active IP Right Cessation
-
1999
- 1999-01-07 DE DE69912484T patent/DE69912484T2/de not_active Expired - Lifetime
- 1999-01-07 EP EP99300124A patent/EP0930381B1/en not_active Expired - Lifetime
- 1999-01-08 US US09/229,086 patent/US20020000187A1/en not_active Abandoned
- 1999-01-12 KR KR1019990000600A patent/KR100582237B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE69912484D1 (de) | 2003-12-11 |
US20020000187A1 (en) | 2002-01-03 |
TW442843B (en) | 2001-06-23 |
JPH11199381A (ja) | 1999-07-27 |
EP0930381B1 (en) | 2003-11-05 |
JP3440802B2 (ja) | 2003-08-25 |
EP0930381A1 (en) | 1999-07-21 |
DE69912484T2 (de) | 2004-09-02 |
KR19990067864A (ko) | 1999-08-25 |
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