CN104711674B - 一种减少直拉单晶硅内部微气孔密度的方法 - Google Patents
一种减少直拉单晶硅内部微气孔密度的方法 Download PDFInfo
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- CN104711674B CN104711674B CN201310660098.9A CN201310660098A CN104711674B CN 104711674 B CN104711674 B CN 104711674B CN 201310660098 A CN201310660098 A CN 201310660098A CN 104711674 B CN104711674 B CN 104711674B
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- silicon
- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201310660098.9A CN104711674B (zh) | 2013-12-09 | 2013-12-09 | 一种减少直拉单晶硅内部微气孔密度的方法 |
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CN201310660098.9A CN104711674B (zh) | 2013-12-09 | 2013-12-09 | 一种减少直拉单晶硅内部微气孔密度的方法 |
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CN104711674A CN104711674A (zh) | 2015-06-17 |
CN104711674B true CN104711674B (zh) | 2017-06-06 |
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CN201310660098.9A Active CN104711674B (zh) | 2013-12-09 | 2013-12-09 | 一种减少直拉单晶硅内部微气孔密度的方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3956499B1 (en) * | 2019-04-18 | 2023-11-29 | GlobalWafers Co., Ltd. | Methods for growing a single crystal silicon ingot using continuous czochralski method |
DE102019208670A1 (de) * | 2019-06-14 | 2020-12-17 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
CN112853477B (zh) * | 2020-12-31 | 2022-06-10 | 宁夏申和新材料科技有限公司 | 降低单晶晶棒气孔率的直拉拉晶方法 |
Citations (9)
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CN1193054A (zh) * | 1997-01-17 | 1998-09-16 | 信越半导体株式会社 | 硅单晶的制造方法及其使用的晶种 |
US5902394A (en) * | 1997-03-31 | 1999-05-11 | Seh America, Inc. | Oscillating crucible for stabilization of Czochralski (CZ) silicon melt |
CN1304459A (zh) * | 1998-10-14 | 2001-07-18 | Memc电子材料有限公司 | 容许工艺条件变动而制备无缺陷硅晶体的工艺 |
CN101240444A (zh) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | 用于制造硅半导体晶片的方法及装置 |
CN101624721A (zh) * | 2008-07-10 | 2010-01-13 | 日本超精石英株式会社 | 石英玻璃坩埚以及使用该石英玻璃坩埚的硅单晶提拉方法 |
CN101660197A (zh) * | 2009-06-19 | 2010-03-03 | 南安市三晶阳光电力有限公司 | 一种低纯度硅制备单晶棒的方法 |
CN102011178A (zh) * | 2010-12-30 | 2011-04-13 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
CN102212872A (zh) * | 2011-05-20 | 2011-10-12 | 浙江星宇能源科技有限公司 | 一种单晶生产过程中的吊肩除杂方法 |
CN102400210A (zh) * | 2010-09-08 | 2012-04-04 | 北京有色金属研究总院 | 一种直拉硅单晶棒内缺陷的调节方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004352518A (ja) * | 2003-05-27 | 2004-12-16 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の製造方法 |
JP5266616B2 (ja) * | 2006-02-07 | 2013-08-21 | 信越半導体株式会社 | シリコン単結晶インゴットの製造方法 |
-
2013
- 2013-12-09 CN CN201310660098.9A patent/CN104711674B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1193054A (zh) * | 1997-01-17 | 1998-09-16 | 信越半导体株式会社 | 硅单晶的制造方法及其使用的晶种 |
US5902394A (en) * | 1997-03-31 | 1999-05-11 | Seh America, Inc. | Oscillating crucible for stabilization of Czochralski (CZ) silicon melt |
CN1304459A (zh) * | 1998-10-14 | 2001-07-18 | Memc电子材料有限公司 | 容许工艺条件变动而制备无缺陷硅晶体的工艺 |
CN101240444A (zh) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | 用于制造硅半导体晶片的方法及装置 |
CN101624721A (zh) * | 2008-07-10 | 2010-01-13 | 日本超精石英株式会社 | 石英玻璃坩埚以及使用该石英玻璃坩埚的硅单晶提拉方法 |
CN101660197A (zh) * | 2009-06-19 | 2010-03-03 | 南安市三晶阳光电力有限公司 | 一种低纯度硅制备单晶棒的方法 |
CN102400210A (zh) * | 2010-09-08 | 2012-04-04 | 北京有色金属研究总院 | 一种直拉硅单晶棒内缺陷的调节方法 |
CN102011178A (zh) * | 2010-12-30 | 2011-04-13 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
CN102212872A (zh) * | 2011-05-20 | 2011-10-12 | 浙江星宇能源科技有限公司 | 一种单晶生产过程中的吊肩除杂方法 |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150708 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150708 |
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Effective date of registration: 20150708 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Applicant after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: YOUYAN NEW MATERIAL CO., LTD. Applicant before: You Yan Semi Materials Co., Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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