KR102383779B1 - 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 - Google Patents
이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 Download PDFInfo
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- KR102383779B1 KR102383779B1 KR1020170083210A KR20170083210A KR102383779B1 KR 102383779 B1 KR102383779 B1 KR 102383779B1 KR 1020170083210 A KR1020170083210 A KR 1020170083210A KR 20170083210 A KR20170083210 A KR 20170083210A KR 102383779 B1 KR102383779 B1 KR 102383779B1
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Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220041276A KR102488729B1 (ko) | 2016-08-19 | 2022-04-01 | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/241,393 | 2016-08-19 | ||
| US15/241,393 US10410832B2 (en) | 2016-08-19 | 2016-08-19 | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220041276A Division KR102488729B1 (ko) | 2016-08-19 | 2022-04-01 | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180020876A KR20180020876A (ko) | 2018-02-28 |
| KR102383779B1 true KR102383779B1 (ko) | 2022-04-05 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170083210A Active KR102383779B1 (ko) | 2016-08-19 | 2017-06-30 | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 |
| KR1020220041276A Active KR102488729B1 (ko) | 2016-08-19 | 2022-04-01 | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220041276A Active KR102488729B1 (ko) | 2016-08-19 | 2022-04-01 | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10410832B2 (enExample) |
| JP (2) | JP7060344B2 (enExample) |
| KR (2) | KR102383779B1 (enExample) |
| CN (1) | CN107768275B (enExample) |
| TW (1) | TW201817899A (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US10304668B2 (en) * | 2016-05-24 | 2019-05-28 | Tokyo Electron Limited | Localized process control using a plasma system |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| KR102401722B1 (ko) | 2017-11-21 | 2022-05-24 | 램 리써치 코포레이션 | 하단 링 및 중간 에지 링 |
| KR102443036B1 (ko) * | 2018-01-15 | 2022-09-14 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| CN110246737B (zh) * | 2018-03-08 | 2021-07-06 | 长鑫存储技术有限公司 | 一种半导体晶圆结构的刻蚀方法 |
| US11078570B2 (en) * | 2018-06-29 | 2021-08-03 | Lam Research Corporation | Azimuthal critical dimension non-uniformity for double patterning process |
| KR102433436B1 (ko) | 2018-07-04 | 2022-08-17 | 삼성전자주식회사 | 기판 처리 시스템, 기판 처리 시스템에서의 에지 링 정렬 검사 방법 및 이를 수행하기 위한 원반형 비젼 센서 |
| CN110767568B (zh) * | 2018-07-26 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 压力调节组件、下电极装置、工艺腔室和半导体处理设备 |
| CN111052344B (zh) | 2018-08-13 | 2024-04-02 | 朗姆研究公司 | 边缘环组件 |
| TW202531282A (zh) * | 2018-11-30 | 2025-08-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| KR102830780B1 (ko) * | 2019-07-01 | 2025-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 결합 재료들을 최적화하는 것에 의한 막 특성들의 조절 |
| KR102335472B1 (ko) * | 2019-09-04 | 2021-12-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP7603668B2 (ja) * | 2019-09-25 | 2024-12-20 | ラム リサーチ コーポレーション | 光干渉法および反射率測定法を使用した半導体機器の自律プロセス制御および最適化のためのシステムおよび方法 |
| CN112701027B (zh) * | 2019-10-22 | 2024-09-17 | 夏泰鑫半导体(青岛)有限公司 | 等离子体处理装置及边缘环的更换方法 |
| CN110867365B (zh) * | 2019-11-04 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 等离子体系统 |
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| US20230128551A1 (en) * | 2020-04-02 | 2023-04-27 | Lam Research Corporation | Edge ring for localized delivery of tuning gas |
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| US12074013B1 (en) * | 2020-08-01 | 2024-08-27 | Qi Liang | System and method for in-situ plasma modification |
| EP3957776B1 (de) * | 2020-08-17 | 2025-06-18 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
| JP2023550357A (ja) * | 2020-11-23 | 2023-12-01 | ラム リサーチ コーポレーション | パージリングを介した局所的なプラズマアークの防止 |
| CN114551204B (zh) * | 2020-11-25 | 2025-04-04 | 中国科学院微电子研究所 | 一种用于控制晶片边缘关键尺寸的系统及方法 |
| US12205844B2 (en) * | 2021-04-08 | 2025-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma control method in semiconductor wafer fabrication |
| US11823939B2 (en) | 2021-09-21 | 2023-11-21 | Applied Materials, Inc. | Apparatus and methods for processing chamber lid concentricity alignment |
| US11769648B2 (en) | 2021-10-28 | 2023-09-26 | Applied Materials, Inc. | Ion source gas injection beam shaping |
| CN117637421A (zh) * | 2022-08-18 | 2024-03-01 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其处理方法 |
| TW202417684A (zh) * | 2022-08-31 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基座環總成、反應器系統、及用於氣體注入之方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080223873A1 (en) * | 2007-03-12 | 2008-09-18 | Tokyo Electron Limited | Dynamic control of process chemistry for improved within-substrate process uniformity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| NL8004005A (nl) | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| US4431477A (en) | 1983-07-05 | 1984-02-14 | Matheson Gas Products, Inc. | Plasma etching with nitrous oxide and fluoro compound gas mixture |
| US4793897A (en) | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
| EP0424299A3 (en) | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
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