JP7060344B2 - 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御 - Google Patents

移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御 Download PDF

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JP7060344B2
JP7060344B2 JP2017154893A JP2017154893A JP7060344B2 JP 7060344 B2 JP7060344 B2 JP 7060344B2 JP 2017154893 A JP2017154893 A JP 2017154893A JP 2017154893 A JP2017154893 A JP 2017154893A JP 7060344 B2 JP7060344 B2 JP 7060344B2
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gas
flow rate
substrate
edge ring
processing
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JP2018032854A5 (enExample
JP2018032854A (ja
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イーティン・ジャーン
サラバナプリヤン・スリラマン
アレックス・パターソン
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
JP2017154893A 2016-08-19 2017-08-10 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御 Active JP7060344B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022066801A JP7454600B2 (ja) 2016-08-19 2022-04-14 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/241,393 2016-08-19
US15/241,393 US10410832B2 (en) 2016-08-19 2016-08-19 Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment

Related Child Applications (1)

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JP2022066801A Division JP7454600B2 (ja) 2016-08-19 2022-04-14 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御

Publications (3)

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JP2018032854A JP2018032854A (ja) 2018-03-01
JP2018032854A5 JP2018032854A5 (enExample) 2018-04-12
JP7060344B2 true JP7060344B2 (ja) 2022-04-26

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JP2022066801A Active JP7454600B2 (ja) 2016-08-19 2022-04-14 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御

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US (2) US10410832B2 (enExample)
JP (2) JP7060344B2 (enExample)
KR (2) KR102383779B1 (enExample)
CN (1) CN107768275B (enExample)
TW (1) TW201817899A (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10304668B2 (en) * 2016-05-24 2019-05-28 Tokyo Electron Limited Localized process control using a plasma system
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
KR102443036B1 (ko) * 2018-01-15 2022-09-14 삼성전자주식회사 플라즈마 처리 장치
CN110246737B (zh) * 2018-03-08 2021-07-06 长鑫存储技术有限公司 一种半导体晶圆结构的刻蚀方法
US11078570B2 (en) * 2018-06-29 2021-08-03 Lam Research Corporation Azimuthal critical dimension non-uniformity for double patterning process
KR102433436B1 (ko) 2018-07-04 2022-08-17 삼성전자주식회사 기판 처리 시스템, 기판 처리 시스템에서의 에지 링 정렬 검사 방법 및 이를 수행하기 위한 원반형 비젼 센서
CN110767568B (zh) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
CN111052344B (zh) 2018-08-13 2024-04-02 朗姆研究公司 边缘环组件
TW202531282A (zh) * 2018-11-30 2025-08-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7588609B2 (ja) * 2019-07-01 2024-11-22 アプライド マテリアルズ インコーポレイテッド プラズマカップリング材料の最適化による膜特性の変調
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US12424470B2 (en) * 2019-09-25 2025-09-23 Lam Research Corporation Systems and methods for autonomous process control and optimization of semiconductor equipment using light interferometry and reflectometry
CN112701027B (zh) * 2019-10-22 2024-09-17 夏泰鑫半导体(青岛)有限公司 等离子体处理装置及边缘环的更换方法
CN110867365B (zh) * 2019-11-04 2022-05-27 北京北方华创微电子装备有限公司 等离子体系统
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP7668814B2 (ja) * 2020-04-02 2025-04-25 ラム リサーチ コーポレーション 調節ガスの局所供給用エッジリング
KR102818337B1 (ko) * 2020-07-24 2025-06-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US12074013B1 (en) * 2020-08-01 2024-08-27 Qi Liang System and method for in-situ plasma modification
EP3957776B1 (de) * 2020-08-17 2025-06-18 Siltronic AG Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe
KR20230112537A (ko) * 2020-11-23 2023-07-27 램 리써치 코포레이션 퍼지 링을 통한 국부화된 플라즈마 아크 (plasma arc) 방지
CN114551204B (zh) * 2020-11-25 2025-04-04 中国科学院微电子研究所 一种用于控制晶片边缘关键尺寸的系统及方法
US12205844B2 (en) * 2021-04-08 2025-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma control method in semiconductor wafer fabrication
US11823939B2 (en) 2021-09-21 2023-11-21 Applied Materials, Inc. Apparatus and methods for processing chamber lid concentricity alignment
US11769648B2 (en) 2021-10-28 2023-09-26 Applied Materials, Inc. Ion source gas injection beam shaping
CN117637421A (zh) * 2022-08-18 2024-03-01 中微半导体设备(上海)股份有限公司 等离子体处理装置及其处理方法
TW202417684A (zh) * 2022-08-31 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座環總成、反應器系統、及用於氣體注入之方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058512A (ja) 1998-08-03 2000-02-25 Matsushita Electric Ind Co Ltd プラズマ処理装置および処理方法
JP2002217171A (ja) 2001-01-17 2002-08-02 Sony Corp エッチング装置
JP2006344701A (ja) 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd エッチング装置およびエッチング方法
JP2007234867A (ja) 2006-03-01 2007-09-13 Toshiba Corp 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム
JP2009527921A (ja) 2006-02-21 2009-07-30 ラム リサーチ コーポレーション 基板縁部からの処理調整ガスの注入
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
CN105470125A (zh) 2014-09-30 2016-04-06 细美事有限公司 处理基板的系统和方法

Family Cites Families (229)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4431477A (en) 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
EP0424299A3 (en) 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5329965A (en) 1993-07-30 1994-07-19 The Perkin-Elmer Corporation Hybrid valving system for varying fluid flow rate
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5762714A (en) 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
US5605179A (en) 1995-03-17 1997-02-25 Insync Systems, Inc. Integrated gas panel
US5907221A (en) 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
JP2713276B2 (ja) 1995-12-07 1998-02-16 日本電気株式会社 半導体装置の製造装置およびこれを用いた半導体装置の製造方法
US5662143A (en) 1996-05-16 1997-09-02 Gasonics International Modular gas box system
US5744695A (en) 1997-01-10 1998-04-28 Sony Corporation Apparatus to check calibration of mass flow controllers
JP3247079B2 (ja) * 1997-02-06 2002-01-15 松下電器産業株式会社 エッチング方法及びエッチング装置
US6210593B1 (en) * 1997-02-06 2001-04-03 Matsushita Electric Industrial Co., Ltd. Etching method and etching apparatus
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6042687A (en) 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
JP3586075B2 (ja) 1997-08-15 2004-11-10 忠弘 大見 圧力式流量制御装置
US6074959A (en) 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
US6060400A (en) 1998-03-26 2000-05-09 The Research Foundation Of State University Of New York Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
JP3830670B2 (ja) 1998-09-03 2006-10-04 三菱電機株式会社 半導体製造装置
US6022809A (en) 1998-12-03 2000-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring for an etch chamber and method of using
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US7150994B2 (en) 1999-03-03 2006-12-19 Symyx Technologies, Inc. Parallel flow process optimization reactor
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
KR100427563B1 (ko) 1999-04-16 2004-04-27 가부시키가이샤 후지킨 병렬분류형 유체공급장치와, 이것에 사용하는 유체가변형압력식 유량제어방법 및 유체가변형 압력식 유량제어장치
US6210482B1 (en) 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
US6709547B1 (en) * 1999-06-30 2004-03-23 Lam Research Corporation Moveable barrier for multiple etch processes
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
KR100750420B1 (ko) 1999-08-17 2007-08-21 동경 엘렉트론 주식회사 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터
US6206976B1 (en) 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
JP4394778B2 (ja) 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP2001230239A (ja) 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
DE60108482T2 (de) 2000-03-07 2006-02-16 Symyx Technologies, Inc., Santa Clara Prozessoptimierungsreaktor mit parallelem durchfluss
JP3316490B2 (ja) * 2000-03-13 2002-08-19 三菱重工業株式会社 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
JP2002110570A (ja) 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6492774B1 (en) 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6333272B1 (en) 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US6962879B2 (en) 2001-03-30 2005-11-08 Lam Research Corporation Method of plasma etching silicon nitride
DE10216703A1 (de) 2001-04-20 2002-11-28 Festo Corp Hauppauge Stapelbare Ventilverteileranordnung
US6752166B2 (en) 2001-05-24 2004-06-22 Celerity Group, Inc. Method and apparatus for providing a determined ratio of process fluids
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
US6744212B2 (en) 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
JP3856730B2 (ja) 2002-06-03 2006-12-13 東京エレクトロン株式会社 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。
US20040040664A1 (en) 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US6810308B2 (en) 2002-06-24 2004-10-26 Mks Instruments, Inc. Apparatus and method for mass flow controller with network access to diagnostics
US7136767B2 (en) 2002-06-24 2006-11-14 Mks Instruments, Inc. Apparatus and method for calibration of mass flow controller
US7552015B2 (en) 2002-06-24 2009-06-23 Mks Instruments, Inc. Apparatus and method for displaying mass flow controller pressure
US6841943B2 (en) 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4502590B2 (ja) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
US7311784B2 (en) 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
KR20040050080A (ko) 2002-12-09 2004-06-16 주식회사 하이닉스반도체 플라즈마 식각 챔버용 포커스 링 구동 장치
US20040112540A1 (en) 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
US7169231B2 (en) 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US6898558B2 (en) 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US20040163601A1 (en) * 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
US20040168719A1 (en) 2003-02-28 2004-09-02 Masahiro Nambu System for dividing gas flow
US6907904B2 (en) 2003-03-03 2005-06-21 Redwood Microsystems, Inc. Fluid delivery system and mounting panel therefor
WO2004097919A1 (ja) 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
CN100454200C (zh) 2003-06-09 2009-01-21 喜开理株式会社 相对压力控制系统和相对流量控制系统
JP4195837B2 (ja) 2003-06-20 2008-12-17 東京エレクトロン株式会社 ガス分流供給装置及びガス分流供給方法
US7137400B2 (en) 2003-09-30 2006-11-21 Agere Systems Inc. Bypass loop gas flow calibration
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US7129171B2 (en) 2003-10-14 2006-10-31 Lam Research Corporation Selective oxygen-free etching process for barrier materials
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP2006128559A (ja) * 2004-11-01 2006-05-18 Tokyo Electron Ltd 基板処理システム
US20050155625A1 (en) 2004-01-20 2005-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber cleaning method
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
JP4407384B2 (ja) * 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
US7412986B2 (en) 2004-07-09 2008-08-19 Celerity, Inc. Method and system for flow measurement and validation of a mass flow controller
US7338907B2 (en) 2004-10-04 2008-03-04 Sharp Laboratories Of America, Inc. Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
US20060124169A1 (en) 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
US7621290B2 (en) 2005-04-21 2009-11-24 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using antisymmetric optimal control
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US20070021935A1 (en) 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber
US7291560B2 (en) 2005-08-01 2007-11-06 Infineon Technologies Ag Method of production pitch fractionizations in semiconductor technology
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
KR20070078346A (ko) * 2006-01-26 2007-07-31 삼성전자주식회사 나이프 에지 링을 갖는 웨이퍼 지지장치
JP4895167B2 (ja) 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
JP4788920B2 (ja) 2006-03-20 2011-10-05 日立金属株式会社 質量流量制御装置、その検定方法及び半導体製造装置
US7398693B2 (en) * 2006-03-30 2008-07-15 Applied Materials, Inc. Adaptive control method for rapid thermal processing of a substrate
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US8997791B2 (en) 2006-04-14 2015-04-07 Mks Instruments, Inc. Multiple-channel flow ratio controller
JP4814706B2 (ja) 2006-06-27 2011-11-16 株式会社フジキン 流量比可変型流体供給装置
JP5037510B2 (ja) 2006-08-23 2012-09-26 株式会社堀場エステック 集積型ガスパネル装置
KR20080023569A (ko) 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
US7757541B1 (en) 2006-09-13 2010-07-20 Pivotal Systems Corporation Techniques for calibration of gas flows
US7309646B1 (en) 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
WO2008052168A2 (en) 2006-10-26 2008-05-02 Symyx Technologies, Inc. High pressure parallel fixed bed reactor and method
US20080110569A1 (en) * 2006-11-09 2008-05-15 Go Miya Plasma etching apparatus and plasma etching method
US9405298B2 (en) 2006-11-20 2016-08-02 Applied Materials, Inc. System and method to divide fluid flow in a predetermined ratio
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
KR101444964B1 (ko) 2006-12-05 2014-09-26 가부시키가이샤 호리바 에스텍 유량제어장치의 검정방법
JP4642115B2 (ja) 2006-12-12 2011-03-02 株式会社堀場エステック 流量比率制御装置
SE530902C2 (sv) 2006-12-19 2008-10-14 Alfa Laval Corp Ab Sektionerad flödesanordning och förfarande för att reglera temperaturen i denna
US7968469B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7846497B2 (en) 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8074677B2 (en) 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7988813B2 (en) * 2007-03-12 2011-08-02 Tokyo Electron Limited Dynamic control of process chemistry for improved within-substrate process uniformity
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
KR101437522B1 (ko) * 2007-09-05 2014-09-03 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기 챔버에서 웨이퍼 에지 가스 주입부를 갖는캐소드 라이너
US7832354B2 (en) * 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US8440259B2 (en) 2007-09-05 2013-05-14 Intermolecular, Inc. Vapor based combinatorial processing
US7824146B2 (en) 2007-09-07 2010-11-02 Advanced Technology Development Facility Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters
JP5459895B2 (ja) 2007-10-15 2014-04-02 Ｃｋｄ株式会社 ガス分流供給ユニット
KR101126536B1 (ko) 2007-10-31 2012-03-22 고쿠리츠다이가쿠호진 도호쿠다이가쿠 플라즈마 처리 시스템 및 플라즈마 처리 방법
JP5050830B2 (ja) * 2007-12-19 2012-10-17 ソニー株式会社 ドライエッチング装置および半導体装置の製造方法
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
KR101028213B1 (ko) 2007-12-27 2011-04-11 가부시키가이샤 호리바 에스텍 유량 비율 제어 장치
US8037894B1 (en) 2007-12-27 2011-10-18 Intermolecular, Inc. Maintaining flow rate of a fluid
EP2247819B1 (en) 2008-01-18 2022-11-02 Pivotal Systems Corporation Method and apparatus for in situ testing of gas flow controllers
JP2009188173A (ja) 2008-02-06 2009-08-20 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP5759177B2 (ja) 2008-02-08 2015-08-05 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット
US8969151B2 (en) 2008-02-29 2015-03-03 Globalfoundries Singapore Pte. Ltd. Integrated circuit system employing resistance altering techniques
US8110068B2 (en) 2008-03-20 2012-02-07 Novellus Systems, Inc. Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
JP5608157B2 (ja) 2008-03-21 2014-10-15 アプライド マテリアルズ インコーポレイテッド 基板エッチングシステム及びプロセスの方法及び装置
JP2010034416A (ja) 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5564043B2 (ja) 2008-08-13 2014-07-30 シエル・インターナシヨネイル・リサーチ・マーチヤツピイ・ベー・ウイ 複数のガス流間のガス流量を制御する方法
US8089046B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Method and apparatus for calibrating mass flow controllers
CN101754565B (zh) * 2008-12-03 2012-07-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种电极组件及应用该电极组件的等离子体处理设备
US8809196B2 (en) 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation
JP5216632B2 (ja) 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
US8409995B2 (en) 2009-08-07 2013-04-02 Tokyo Electron Limited Substrate processing apparatus, positioning method and focus ring installation method
WO2011021539A1 (ja) 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
WO2011051251A1 (en) 2009-10-26 2011-05-05 Solvay Fluor Gmbh Etching process for producing a tft matrix
US20120244715A1 (en) 2009-12-02 2012-09-27 Xactix, Inc. High-selectivity etching system and method
US9127361B2 (en) 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
WO2011078242A1 (ja) 2009-12-25 2011-06-30 株式会社堀場エステック マスフローコントローラシステム
US9324572B2 (en) 2010-03-04 2016-04-26 Tokyo Electron Limited Plasma etching method, method for producing semiconductor device, and plasma etching device
US20110265883A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control
JP5584517B2 (ja) * 2010-05-12 2014-09-03 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
BR112013002632B1 (pt) 2010-08-02 2020-01-21 Basell Polyolefine Gmbh processo e aparelho para misturar e dividir correntes de fluido
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US8905074B2 (en) 2010-10-22 2014-12-09 Applied Materials, Inc. Apparatus for controlling gas distribution using orifice ratio conductance control
CN103261477B (zh) 2010-12-08 2015-09-30 欧瑞康先进科技股份公司 用于向基底上沉积层的设备和方法
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
JP5855921B2 (ja) 2010-12-17 2016-02-09 株式会社堀場エステック ガス濃度調整装置
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9059678B2 (en) 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
CN103650118B (zh) 2011-05-31 2016-08-24 应用材料公司 电感耦合等离子体(icp)反应器的动态离子自由基筛与离子自由基孔
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
JP5739261B2 (ja) 2011-07-28 2015-06-24 株式会社堀場エステック ガス供給システム
US8728239B2 (en) 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow
JP5948026B2 (ja) 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8849466B2 (en) 2011-10-04 2014-09-30 Mks Instruments, Inc. Method of and apparatus for multiple channel flow ratio controller system
US20130104996A1 (en) 2011-10-26 2013-05-02 Applied Materials, Inc. Method for balancing gas flow supplying multiple cvd reactors
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
JP5932599B2 (ja) 2011-10-31 2016-06-08 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US8671733B2 (en) 2011-12-13 2014-03-18 Intermolecular, Inc. Calibration procedure considering gas solubility
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9804609B2 (en) 2012-02-22 2017-10-31 Agilent Technologies, Inc. Mass flow controllers and methods for auto-zeroing flow sensor without shutting off a mass flow controller
JP5881467B2 (ja) 2012-02-29 2016-03-09 株式会社フジキン ガス分流供給装置及びこれを用いたガス分流供給方法
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
KR101974420B1 (ko) 2012-06-08 2019-05-02 세메스 주식회사 기판처리장치 및 방법
KR101974422B1 (ko) 2012-06-27 2019-05-02 세메스 주식회사 기판처리장치 및 방법
US20140027060A1 (en) * 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
JP5616416B2 (ja) 2012-11-02 2014-10-29 株式会社フジキン 集積型ガス供給装置
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US20140144471A1 (en) 2012-11-28 2014-05-29 Intermolecular, Inc. Contamination Control, Rinsing, and Purging Methods to Extend the Life of Components within Combinatorial Processing Systems
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
KR102104018B1 (ko) 2013-03-12 2020-04-23 어플라이드 머티어리얼스, 인코포레이티드 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체
US20140273460A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Passive control for through silicon via tilt in icp chamber
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9425077B2 (en) 2013-03-15 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus with transportable edge ring for substrate transport
KR20140132542A (ko) 2013-05-08 2014-11-18 주식회사 미코 세라믹 히터 및 이의 제조 방법
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
CN104299929A (zh) 2013-07-19 2015-01-21 朗姆研究公司 用于原位晶片边缘和背侧等离子体清洁的系统和方法
JP6193679B2 (ja) 2013-08-30 2017-09-06 株式会社フジキン ガス分流供給装置及びガス分流供給方法
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
CN103730318B (zh) 2013-11-15 2016-04-06 中微半导体设备(上海)有限公司 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
WO2015099892A1 (en) 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US20150184287A1 (en) 2013-12-26 2015-07-02 Intermolecular, Inc. Systems and Methods for Parallel Combinatorial Vapor Deposition Processing
CN104752141B (zh) 2013-12-31 2017-02-08 中微半导体设备(上海)有限公司 一种等离子体处理装置及其运行方法
CN104851832B (zh) 2014-02-18 2018-01-19 北京北方华创微电子装备有限公司 一种固定装置、反应腔室及等离子体加工设备
US9580360B2 (en) 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof
JP6204869B2 (ja) 2014-04-09 2017-09-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20150340209A1 (en) 2014-05-20 2015-11-26 Micron Technology, Inc. Focus ring replacement method for a plasma reactor, and associated systems and methods
US9318343B2 (en) 2014-06-11 2016-04-19 Tokyo Electron Limited Method to improve etch selectivity during silicon nitride spacer etch
CN105336561B (zh) 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀装置
WO2016061475A1 (en) 2014-10-17 2016-04-21 Lam Research Corporation Gas supply delivery arrangement including a gas splitter for tunable gas flow control
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US11605546B2 (en) * 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
US9911620B2 (en) 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
KR102689380B1 (ko) 2016-01-26 2024-07-26 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
US9640409B1 (en) 2016-02-02 2017-05-02 Lam Research Corporation Self-limited planarization of hardmask
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
CN107093569B (zh) 2016-02-18 2019-07-05 北京北方华创微电子装备有限公司 一种晶片定位装置及反应腔室
US20170278679A1 (en) 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10510516B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Moving focus ring for plasma etcher
US10504738B2 (en) * 2017-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for plasma etcher

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058512A (ja) 1998-08-03 2000-02-25 Matsushita Electric Ind Co Ltd プラズマ処理装置および処理方法
JP2002217171A (ja) 2001-01-17 2002-08-02 Sony Corp エッチング装置
JP2006344701A (ja) 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd エッチング装置およびエッチング方法
JP2009527921A (ja) 2006-02-21 2009-07-30 ラム リサーチ コーポレーション 基板縁部からの処理調整ガスの注入
JP2007234867A (ja) 2006-03-01 2007-09-13 Toshiba Corp 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
CN105470125A (zh) 2014-09-30 2016-04-06 细美事有限公司 处理基板的系统和方法

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