CN103261477B - 用于向基底上沉积层的设备和方法 - Google Patents

用于向基底上沉积层的设备和方法 Download PDF

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CN103261477B
CN103261477B CN201180059377.9A CN201180059377A CN103261477B CN 103261477 B CN103261477 B CN 103261477B CN 201180059377 A CN201180059377 A CN 201180059377A CN 103261477 B CN103261477 B CN 103261477B
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substrate
fixture
chuck
layer
equipment
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CN103261477A (zh
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斯文·尤韦·瑞斯奇尔
穆罕默德·艾尔格哈查理
尤尔根·韦查德
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Aifa Advanced Technology Co ltd
Evatec AG
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Oerlikon Advanced Technologies AG
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/466—Cooling of the substrate using thermal contact gas
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

用于在处理气体中在基底（2）上沉积层（37、38、39）的设备（1、26）包括：夹盘（3），包括用于支撑基底（2）的第一表面（14）；夹具（4），用于将基底（2）固定到夹盘（3）的第一表面（14）；抽空的封闭箱（5），封闭夹盘（3）和夹具（4），并包括进口，处理气体能够通过进口进入封闭箱（5）中；以及控制装置（19）。控制装置（19）适于将夹盘（3）和夹具（4）中的至少一个相对于彼此且独立于彼此移动，从而在单个沉积工艺期间在保持处理气体的流动以及封闭箱（5）内的压力小于大气压的同时调节夹盘（3）和夹具（4）之间的间隔。

Description

用于向基底上沉积层的设备和方法
本发明涉及用于向基底上沉积层的设备和方法，具体地讲，涉及用于向包括半导体的基底上沉积金属层的设备和方法。
可以利用各种方法向基底上沉积层。诸如电沉积、喷涂和浸涂的一些方法可以在大气压下执行。其它沉积方法在比环境大气压低的压力下通过在抽空的封闭箱内沉积层来执行。在减压下的沉积工艺可以被称作真空沉积工艺。真空沉积工艺包括诸如化学气相沉积（CVD）技术（包括等离子体增强化学气相沉积（PECVD））和物理气相定位沉积技术（例如溅射和蒸镀）的方法。
可以组合各种方法以产生合适的层。例如，可以利用真空沉积处理在绝缘基底上沉积种子层，并可以利用诸如电沉积的大气沉积方法将其它层沉积到种子层上。
WO2011/061695A2公开了处理基底的方法，所述基底在被放置在真空中时显示出脱气。基底可以包括复合物，复合物包括嵌入在塑料基质中的例如硅芯片形式的半导体部分。一个或多个金属层被沉积到此基底上，从而形成重写结构。WO2011/061695A2公开了这样一种方法，通过此方法，可以更好地控制来自基底的脱气，从而实现稳态平衡，在稳态平衡下，脱气速率仅取决于扩散速率，从而减少了基底的总体污染。
然而，期望的是对用于在基底上沉积层（具体地在包括半导体材料的基底上沉积金属层）的设备和方法进行进一步改进。
提供了一种包括下述步骤的用于向基底上沉积层的方法。将基底插入到抽空的封闭箱中，并设置在布置于封闭箱内的夹具和夹盘之间。当封闭箱内的压力小于大气压时，向封闭箱供给处理气体，当供给处理气体时且当基底的第一侧与夹具隔开一定距离时，向基底上沉积第一层。使夹具与基底的第一侧物理接触，当保持供给处理气体且封闭箱中的压力小于大气压时且当夹具与基底的第一侧物理接触并将基底固定到夹盘时，向第一层上沉积其它层。
根据此方法，以两阶段工艺在基底上沉积层。在第一阶段中，当夹具与基底的前侧隔开一定距离时，直接向基底的表面上沉积第一层。在第二阶段中，使夹具与基底的第一侧物理接触，具体地，与已经沉积在基底上的第一层物理接触。以单个工艺顺序执行两个阶段，其中，保持封闭箱内的压力小于大气压，并保持向封闭箱供给处理气体。因此，封闭箱未被打开以移动夹具，从而夹具与基底物理接触并将基底固定到夹具。例如，可以利用适当编程的控制单元自动执行包括移动夹具的两阶段工艺。
当夹具不与基底接触时且当夹具与基底接触时，在层的沉积期间保持供给处理气体并保持封闭箱的压力小于环境压力。然而，所保持的分阶段不用于将方法限制到将处理气体的流率和压力保持恒定的一种方法，而是包括这样的方法，即，处理气体供给的流率和压力的水平可随沉积时间而改变，只要向封闭箱供给处理气体并且封闭箱内的压力保持在小于大气压的值即可。
该方法使得在其它层的沉积期间位于夹具下方的区域的层的沉积具有比在其它层的沉积期间未被夹具覆盖的区域中的全部层的厚度小的厚度。由于在第一层的沉积期间夹具与基底隔开一定距离，所以第一层可以在基底的整个第一侧上延伸。因此，第一层可以起到保护基底的材料以免与夹具直接接触的作用。
在实施例中，在沉积第一层之前，基底被放置成与夹盘的第一表面接触。然后，在基底被支撑在夹盘的第一表面上的同时，可以沉积第一层。基底也可以在其它层的沉积期间与夹盘的第一表面物理接触且被支撑在夹盘的第一表面上。夹具也可以在其它层的沉积期间与基底的相对侧物理接触，从而基底可以被视为在其它层的沉积期间机械地夹在夹具和夹盘之间。
在实施例中，基底放置在能够移动的销（例如，可伸长的且可缩回的销）上，销在夹盘的第一表面上突出并将基底与夹盘以一定距离隔开。通过缩回销，可以将基底放置在夹盘的第一表面上。销作为用于基底的加载/卸载系统。用于将基底插入到封闭箱中的加载臂通过利用这些能够移动的销可以更好地避免与夹盘接触。因为晶片不在夹盘的表面上机械地滑动，所以也更好地避免了晶片的后侧的刮擦。
在实施例中，在第一层的沉积期间，夹具支撑在能够移动的销上并且销移动，从而将夹具定位成在基底的第一侧上方以一定距离隔开。夹具可相对于基底且相对于夹盘移动，并且可独立于基底的位置和夹盘的位置而移动。这不仅能够在夹具未与基底接触的情况下和在夹具与基底接触的情况下沉积层，而且还允许针对具有不同厚度的基底执行这样的方法。此实施例对于物理气相沉积工艺还允许调节目标与基底的距离，在物理气相沉积工艺中，来自源（通常称作目标）的材料被沉积到基底上。
通过缩回销，可以使夹具与基底的第一侧接触。这可以在预定的时间跨度之后和/或在第一层已经达到预定的厚度之后执行。可以通过预先限定沉积时间（即，时间跨度）来控制第一层的厚度。可选地，可以直接监测第一层的厚度，并且当确定出第一层具有期望的厚度时，可以通过缩回销来使夹具与基底接触。
在一些实施例中，夹盘是可移动的，并且夹盘相对于夹具且独立于夹具而移动，并且使夹具与基底的第一侧接触。在这些实施例中，夹具可以是固定的或可移动的。
在实施例中，在未对基底进行主动冷却的情况下沉积第一层。这避免了基底因主动冷却而移动的可能性。例如，如果气体流用于主动冷却基底，这就可能会发生。
可以在对基底进行主动冷却的情况下沉积其它层。在基底已经由夹具固定到基底之后，可以接通主动冷却。在此实施例中，因为夹具将基底固定到夹盘，所以避免了基底因主动冷却而移动，从而防止了在其它层的沉积期间基底的移动。
可以通过在基底的第二侧上或在夹盘上流通气体流来主动冷却基底。夹盘可以包括冷却回路，液体或气体通过冷却回路流动，从而去除来自夹盘的热，因此去除了从分离附着的基底到夹盘的热。
该方法可以用于物理气相沉积方法和化学气相沉积方法。在来自材料源的材料的物理气相沉积的情况下，向包括将被沉积的材料在内的材料源施加能量，从而材料源的一部分被去除、沉积到基底上并在基底的第一侧上形成层。
在溅射沉积的情况下，材料源可以是固体材料的盘，或者在热或电子束蒸镀的情况下，材料源可以是不规则的形状。将被供给的能量还取决于沉积的类型。在溅射的情况下，可以向材料源施加电压。例如，在蒸镀的情况下，可以向源材料上引导电子束。
材料源的被去除的部分可以包括沉积到基底上且在基底上形成金属层的一种或多种元素。金属层可以是导电的。
如果使用化学气相沉积技术，则该方法还包括将气态材料供给到封闭箱。气态材料可以包括将被沉积到基底上的具有一种或多种元素的多种化合物中的一种。化合物在室内分解，从而释放出沉积到基底上且形成层的一种或多种元素。通过抽空和捕获系统从封闭箱去除由气态材料的分解形成的其它组分（例如，有机分子和/或氧）。
可以选择气态材料，使得所述一种或多种元素在室内起反应并沉积到基底上，并且在基底上形成金属层。
在实施例中，基底包括半导体或半导体晶片或包含嵌入在塑料基质中的半导体部分的复合物。沉积在这些基底上的层可以是导电金属层。金属层可以提供用于包括在半导体中的集成电路器件的重写层、金属化或可以用作例如通过电沉积或电流沉积在其上生长较厚的金属层的导电种子层。
在第一时间跨度内沉积第一层，在第二时间跨度内沉积其它层。第一时间跨度和第二时间跨度可以是预先定义的，从而使得第一层和其它层具有预定的厚度。如果形成第一层和其它层的材料的沉积速率是已知的，则可以使用该方法。
在实施例中，在总的时间跨度内沉积第一层和其它层，第一时间跨度在总的时间跨度的1%和50%之间，或者第一时间跨度在总的时间跨度的10%至20%之间。第二时间跨度在总的时间跨度的50%和99%之间，或者在总的时间跨度的80%至90%之间。
如果在第一层的沉积期间未主动冷却基底，则会期望用于第一层的时间跨度较短，以限制基底的温度升高。
如果在其它层的沉积期间位于夹具下方的区域将要具有较大的厚度，则会期望用于第一层的时间跨度较长。例如，如果层的较薄的区域将要用作例如导电接触区域，则非常薄的金属层可能会具有高电阻，这不会是期望的。
还提供了用于在处理气体中在基底上沉积层的设备。所述设备包括：夹盘，包括用于支撑基底的第一表面；夹具，用于将基底固定到夹盘的第一表面；抽空的封闭箱，封闭夹盘和夹具，并具有进口，处理气体能够通过进口进入封闭箱中；以及控制装置。控制装置适于将夹盘和/或夹具相对于彼此且独立于彼此移动，从而在单个沉积工艺期间在保持处理气体的流动以及封闭箱内的压力小于大气压的同时调节夹盘和夹具之间的间隔。
因为封闭箱是可抽空的，所以所述设备适合用于减压沉积处理技术。因为控制装置适于在单个沉积工艺期间将夹盘和/或夹具相对于彼此移动，所以所述设备还适合用于执行根据前述实施例之一的方法。封闭箱不必是打开的，并且封闭箱具有环境气氛，从而将夹盘和/或夹具相对于彼此移动。
控制装置可以适于通过适当地被编程以控制结合到夹具和/或夹盘的致动装置来提供此特征。致动装置结合到位于封闭箱内的夹具和/或夹盘，从而夹具和/或夹盘可以在不破坏封闭箱的真空或密封的情况下移动。
在实施例中，控制装置适于在单个沉积工艺期间在保持处理气体的流动的同时且在保持封闭箱内的压力小于大气压的同时使夹具与基底物理接触并将基底固定到夹盘的第一表面。
例如，控制装置可适于移动夹具和/或夹盘，从而在夹具和夹盘之间提供与基底的厚度对应的预定距离，由此将基底机械地固定在夹具和夹盘之间。可选地，控制装置可适于撤回对夹具的支撑，以使夹具在其自身重量的作用下位于基底上且将基底机械地固定到夹盘。
所述设备还可以包括用于支撑夹具的第一高度调节器。第一高度调节器能够移动以调节夹具和夹盘之间的距离。
所述设备还可以包括用于支撑基底的第二高度调节器，第二高度调节器能够移动以调节基底和夹盘之间的距离并调节基底和夹具之间的距离。
还可以提供用于调节夹盘相对于夹具的高度的第三高度调节器。
第一高度调节器和第二高度调节器中的至少一个可以包括多个销，例如三个销。这些销能够沿着与夹具的主平面和夹盘的第一表面垂直的方向移动。
在实施例中，夹具包括位于面朝夹盘的第一表面的表面中的底切。可以设置底切以减小夹具和基底之间的接触面积，而同时，由于在底切上突出的部分，覆盖切口的部分提供更大的屏蔽或遮掩效果。
夹具可以包括面朝夹盘的第一表面且与夹盘的第一表面大体平行的表面。该表面提供了用于将基底固定到夹盘的第一表面的夹持表面。这种布置适合用于将诸如晶片的平坦基底固定到夹盘。
因为夹具设置为与基底的第一侧相邻，所以将被沉积到基底上的材料通常从夹具上方的方向撞击基底的第一侧。在这种情况下，将被沉积到基底上的材料也可以沉积在夹具上，例如沉积在夹具的与基底紧邻的区域中。
在实施例中，夹具包括远离夹盘的第一表面的粗糙表面。沉积到基底上的材料还趋于至少在紧邻基底的区域中沉积在夹具上。粗糙表面增大了沉积材料与夹具的粘附，并防止沉积材料形成薄片或变得脱离由此其可能落到基底上并污染基底。
所述设备还可以包括用于冷却夹盘的冷却装置。冷却装置可以包括设置在封闭箱外部的具有热交换器的冷却回路。诸如气体或液体的冷却剂可以被迫使流经冷却回路，以去除来自夹盘的热，因此，通过热传导去除来自与夹盘接触的基底的热。
为了能够在减压下沉积层，所述设备还可以包括用于对沉积室进行抽空的抽空系统。抽空系统可以包括一个或多个真空泵，例如旋转泵和扩散泵或者旋转泵和涡轮泵。
所述设备还可以包括用于支撑材料源的支撑件，材料源包括将被沉积到基底上的材料。如果将使用诸如溅射或蒸镀的物理气相沉积技术来沉积层，则使用该实施例。可以布置沉积源，使得其直接面对基底的其上将被沉积层的前侧。在这种布置中，将夹具设置在基底和材料源之间。
所述设备还可以包括用于向材料源供给能量并用于去除材料源的一部分的能量源。材料源的这些被去除的部分沉积到基底上，从而建立第一层和其它层。
如果将使用化学气相沉积来沉积层，则所述设备还可以包括用于将气态材料供给到能够抽空的封闭箱的气体供给系统，所述气态材料包括将以层的形式沉积到基底上的一种或多种元素。
在实施例中，控制装置被编程为在预定的沉积时间之后相对于基底移动夹具并利用夹具将基底固定到夹盘。这种控制装置能够通过预定的沉积时间限定位于夹具下方的区域中的第一层的厚度。
所述设备还可以包括层厚度监测器。在此实施例中，控制装置可以被编程为在第一层具有预定的厚度之后相对于基底移动夹具并利用夹具将基底固定到夹盘。如果不能通过沉积时间跨度预先限定沉积层的厚度或者沉积层的厚度通过测量沉积时间不足以精确地可估计，则可以使用厚度监测器。
现在将参照附图描述实施例。
图1示出了根据第一实施例的通过溅射在基底上沉积层的设备；
图2示出了根据第二实施例的通过等离子体增强化学气相沉积在基底上沉积层的设备；
图3示出了仅使用荫罩在基底上沉积层的布置；
图4示出了仅使用夹具在基底上沉积层的布置；
图5示出了在绝缘基底上沉积导电层期间的电弧；
图6示出了在基底上沉积层的方法，在沉积过程中，夹具相对于基底移动；
图7示出了根据本发明的夹具；
图8示出了夹具和基底相对于将被沉积的材料的源的移动。
图1示出了使用溅射沉积向基底2上沉积层的设备1。设备1包括用于支撑基底2的夹盘3、用于将基底2固定到夹盘3的夹具4和抽空的封闭箱5，抽空的封闭箱5围住夹盘3、基底2、夹具4和目标6，目标6包括将被溅射到基底2上的材料的源。在这个实施例中，设备1包括磁控管溅射布置，并包括位于支撑件8之后的磁体7，其中，目标6固定到支撑件8上。设备1包括在目标6上施加电压的电源9。
虽然将设备1示为具有单个支撑件和单个目标，但是该设备不限于一个支撑件和一个目标，并可以包括均具有相应的目标的两个或更多个支撑件。类似地，均与夹具相关联的两个或更多个基底可以同时用层进行涂覆。
设备1还包括用于对封闭箱5进行抽空并将封闭箱5内的压力减小到小于环境大气压的抽空系统10。设备1还包括气体供给系统11和背侧冷却系统12，气体供给系统11将处理气体供给到封闭箱5中，当基底2被放置在夹盘3的第一表面14上时，背侧冷却系统12主动地冷却夹盘3和基底2的后表面13。背侧冷却系统12可以包括氦气的流动。
夹具4位于目标6和夹盘3之间，从而夹具4位于基底2的第一侧15上方。夹具4具有环的形式，环具有比基底2的外径略小的内径，从而能够使夹具4接触基底2的外围区域并能够将夹具4固定在夹盘3上的适当位置。
夹具4、基底2和夹盘3均可相对于彼此移动且彼此独立，从而调节夹具4与基底2的第一侧15的距离（在图1中用标号16指示）和基底2的后表面13与夹盘3的第一表面14之间的距离（在图1中用标号17指示）。
具体地讲，夹盘3的第一表面14、基底2的第一侧15和夹具4相对于封闭箱5的基部18和相对于目标6的高度可通过多个高度调节装置调节，多个高度调节装置的位置由控制单元19来控制。用于调节基底2、夹盘3和夹具4的高度的机械装置可以位于封闭箱5的外部，以减少位于封闭箱5内的移动部件的数量并简化设备1的构造。
例如，夹具4和基底2的高度可由可伸缩销形式的高度调节器来调节。在图1中用箭头20示出了夹具4的移动，用箭头21示出了基底2的移动，并通过标号22示出了夹盘3的移动。
在封闭箱5包含比环境大气压低的压力的同时并且在处理气体由气体供给系统11供给到封闭箱5中的同时，基底2、夹盘3和夹具4的位置可由控制单元19控制。控制单元19位于封闭箱5的外部。控制单元19和高度调节器之间通过限定封闭箱5的壁进行的连接是真空密封的，从而在封闭箱具有小于大气压的压力的同时，基底2、夹盘3和夹具4的位置可以改变。
在实施例中，在向目标6施加电压并且将材料沉积到基底2上的同时，基底2、夹盘3和夹具4的位置也可由控制单元19控制。这能够在向基底2的第一侧15上沉积膜的过程中调节夹具4相对于基底2的位置。
设备1可用于利用下面的方法向基底2上沉积层。
在实施例中，基底2位于穿过夹盘3突出的销23上，从而将基底2的后表面13与夹盘3的第一表面14隔开用标号17指示的距离。此位置可指示为加载/卸载位置。销23随后缩回，从而基底2的后表面13与夹盘3的第一表面14接触。在夹具4位于基底2的第一侧15上方且与基底2的第一侧15隔开如在图1中用距离16指示的距离的同时，向目标6供给电压并向基底2的第一侧15上沉积包括目标6的元素的第一层。
在预定义的第一时间跨度之后且因此在沉积的层已经达到预定义的厚度之后，支撑夹具4的销24缩回，从而沿着朝向基底2的第一侧15的方向降低夹具4，直到夹具4的下内表面25与基底2的第一侧15物理接触并将基底2固定到夹盘3。在此过程期间，保持封闭箱5的减小的压力，并保持向封闭箱5中供给处理气体。另外，在夹具4与基底2接触并将基底2固定到夹盘3的同时，也保持向目标6供给的电压（即，电力），并在第一侧15上沉积其它层，具体地，将其它层沉积到已经沉积在基底2的第一侧15上的第一层上。
如在图6的C)中更详细地示出的，在夹具4与基底2接触的同时，夹具4的下内表面25与沉积在基底2的第一侧15上的第一层的边缘区域接触。在此位置，夹具4防止在基底的外围区域中沉积材料，从而产生中心部分比外围部分厚的层。
在第一时间跨度期间，当在夹具4不与基底2的第一侧15接触的情况下沉积第一层时，夹盘3未被主动地冷却。这确保了当在沉积工艺的此阶段期间基底2仅由于其自身重量支撑在夹盘3的第一表面14上时提供背侧冷却系统12的气体流不影响基底2在夹盘3的第一表面14上的位置。
在层沉积的第二阶段期间，在夹具4将基底2固定到夹盘3的第一表面14之后，当夹具4将基底2固定到夹盘3时，可以将背侧冷却系统12接通。对于基底2由背侧冷却系统12主动地冷却的第二时间跨度，沉积其它层。
基底2可以是半导体晶片，例如通常为大体圆形和平面的硅晶片。基底2可以是包括以规则的矩阵布置且嵌入在塑料基质中的多个半导体器件的复合基底。基底还可以包括上绝缘层，例如聚酰亚胺层。该上绝缘层可以被构造成暴露位于下面的导电接触区域。设备1可以用于将金属层沉积到该基底上，其中，该基底随后被构造成为半导体器件提供重新布线层。
图2示出了根据第二实施例的用于在基底2上沉积层的设备26。设备26与根据第一实施例的设备的不同之处在于，利用等离子体增强化学气相沉积而不是溅射来沉积层。因此，设备26不包括设置在封闭箱5内的材料源，而是包括设置在封闭箱5内的与用作第二电极的夹盘3相对的第一电极27。
设备26的气体供给系统11适于提供包括将被沉积在基底2的第一侧15上的具有一种或多种元素的化合物的气体。该气体被供给到保持在比环境大气压低的压力下的封闭箱5中，并在限定于两个电极3和27之间且位于基底2的第一侧15上方的容积29内分解，在容积29中形成等离子体，从而一种金属元素或多种金属元素沉积在基底2的前侧15上并在基底2的第一侧15上形成层。
如在第一实施例中的一样，设备26包括其上设置基底2的夹盘3和夹具4。如在第一实施例中的一样，夹盘3、基底2和夹具4的位置可相对于彼此且独立于彼此而调节，从而在向基底2的第一侧15上沉积层的过程中可以使基底2与夹盘3的第一表面14接触并可调节夹具4相对于基底2的第一侧15的位置。
设备26可以如在第一实施例中那样操作。在夹具4在基底2的第一侧15前面间隔一定距离的同时，第一层可以从化学气相沉积到基底2的第一侧15上。随后，在封闭箱5保持在减压下且向封闭箱5供给处理气体的同时，使夹具4与基底2的包括第一层的第一侧15物理接触，从而夹具4将基底2固定到夹盘3的第一表面14，并且沉积工艺在基底2的未被夹具4接触的区域中继续沉积其它层。
如在第一实施例中的一样，在夹具4与基底2隔开一定距离的第一阶段中，夹盘3未被主动地冷却。在使夹具4与基底2物理接触时，接通背侧冷却，从而在随后向基底2的第一表面15上沉积层的过程中主动地冷却基底2的相对的后侧13。
本发明涉及用于处理诸如半导体晶片的基底的具有改进的夹持装置的系统或设备，所述夹持装置可以用于晶片未夹持和晶片夹持的组合的PVD处理或者用于在同一处理室中晶片未夹持和晶片夹持的组合的CVD处理。
此外，提供了用于制造诸如晶片（具体地，半导体晶片）的基底的方法，其中，基底在第一时间跨度期间在未被夹持的同时被处理，并且在相同的处理顺序内在第二时间跨度期间在被夹持的同时被处理。该方法适用于物理气相沉积和减压下的其它处理技术。典型的但非限制性的应用是用于随后电镀的种子层沉积。在此应用中，薄的导电层被沉积在包括其表面结构的基底上，并用作用于随后的金属电流沉积（也被描述为电镀或电沉积）的种子层。
如这里定义的处理包括作用在基底上的任何化学、物理或机械作用。
如这里定义的基底是将在处理设备中处理的组件、部件或工件。基底包括但不限于具有矩形、正方形或圆形形状的平坦的板形部件。在实施例中，基底实质上是平面的圆形基底，例如包括嵌入在塑料基质中的半导体芯片的半导体晶片或复合晶片。
真空处理或真空处置系统或设备至少包括用于将在比环境大气压低的压力下处理的基底的封闭箱。
夹盘是适于在处理过程中紧固基底的基底支撑件。这种夹持可以尤其通过静电力（静电夹盘ESC）、机械手段或两者来实现。夹盘可以陈列其它工具（如温度控制组件（冷却、加热））和传感器（基底方位、温度、翘曲等）。
CVD或化学气相沉积是允许在加热的基底上沉积层的化学工艺。一种或多种挥发性前驱物材料被供入到处理系统，在处理系统中，它们在基底表面上反应和/或分解，从而产生期望的沉积物。CVD的变形包括：低压CVD（LPCVD）-在次大气压下的CVD工艺；超高真空CVD（UHVCVD）-通常在低于10-6Pa/10-7Pa下的CVD工艺；诸如微波等离子体辅助CVD（MPCVD）、等离子体增强CVD（PECVD）的等离子体方法，即，利用等离子体来增强前驱物的化学反应速率的CVD工艺。
物理气相沉积（PVD）是用于描述通过蒸发形式的材料向基底的表面上（例如，向半导体晶片上）的冷凝来沉积薄膜的各种方法中的任何方法的常用术语。涂覆方法包括纯物理工艺，例如高温真空蒸镀或等离子体溅射轰击。PVD工艺的示例包括阴极电弧沉积、电子束物理气相沉积、蒸发沉积、溅射沉积（即，限制在位于目标材料的表面上的磁隧道中的辉光等离子体放电）。
术语层、涂层、沉积物和膜在本公开中可互换地用于在真空处理设备中沉积的膜，而不论是CVD、LPCVD、等离子体增强CVD（PECVD）或PVD（物理气相沉积）。
图3至图8示出了对称的设备布置的一侧的示意图。
图3示出了具有荫罩33的无夹具系统，荫罩33在基底2的第一表面15上方以一定距离隔开，从而它位于基底和将被沉积在基底2的第一表面15上的材料的源之间。基底2布置在底座或夹盘3上。通常，荫罩33和保护环34用于保护夹盘3周围的区域，即，夹盘顶部、销等。沉积的膜30覆盖整个暴露的上基底表面15，如由箭头35示出的。这种布置具有如下可能的优点，即，其是容易的、简单的、便宜的、可靠的、晶片无损坏风险，并且完全的上表面暴露于沉积步骤。因此，可以随后在非常靠外的边缘上接触晶片以进行电镀。这种布置的可能的缺点是其不能使用背侧气体来冷却晶片。
图4示出了机械夹持系统。夹具4将基底2机械地固定到夹盘3。小的边缘区域用于支撑基底2，因此不能被处理，即，材料不能被沉积在位于基底2的外围区域中的夹具4下方。这由膜31相对于基底2的边缘的缩回位置示出。这种布置具有如下可能的优点，即，其是容易的、简单的、便宜的、可靠的，并允许背侧气体和晶片冷却。然而，其具有如下可能的缺点，即，未被涂覆的基底边缘区域提供不了用于电镀的接触，因此是不期望的。
对于随后电镀的种子层的应用，这些方法中的每种方法如果被单独应用，则可能不够。然而，如果利用两种系统的组合来避免以上可能的缺点，则将需要两个单独的室。步骤1是在如图3所示的具有“无夹具”布置的第一室中沉积种子层，然后在如图4所示的第二室中进行有夹具的沉积工艺。由于需要两个室，所以工艺将被打断。
可以利用静电夹持（ESC）将基底固定到夹盘。静电夹持允许背侧气体和晶片冷却以及全面沉积，但是例如对于介电基底而言，其是昂贵的且并非总是可靠的。
对于用于电镀的晶片封装工艺（例如，种子层沉积），通常，需要晶片冷却和全面沉积。同时出于经济原因，这些工艺需要在高可靠性下允许低成本。
此外，尤其在晶片封装中，使用了越来越多的不同的基底类型，例如纤薄化的结合在硅上的硅、纤薄化的结合在玻璃上的硅、聚合物涂覆的基底和具有嵌入的晶片的聚合物基底。这些不同类型的基底不能通过单种类型的ESC来处理；在一些情况下，其应用甚至会是不可能的。
作为纯机械夹持的解决方案的其它可能的缺点在于，在一些情况下，特别当期望以深的特征（如TSV（硅通孔））的沉积时，基底可能暴露于相对高的离子电流。例如在差的电介质的情况下，这能够导致夹具环边缘和生长的金属膜之间的电位差。这些不同的电位之间的自发放电能够导致对生长的金属膜的损坏，即所谓的“电弧树”，如在图5中由箭头32示意性地示出的。
这些可能的缺点可以通过使用在图1和图2中示出的设备来避免，因为这种设备可用于在单个封闭箱内使用无夹具的布置和机械夹持的布置两者，并且对于单个工艺顺序无需切换处理气体且无需中断材料向基底2上的沉积。
结合图6更详细地示出了在沉积单个膜的单个工艺顺序期间相对于基底2和夹盘3移动夹具4的方法。
图6的A)示出了加载在加载位置的基底2，其中，呈环形的夹具4位于夹具升销24（通常，三个销24）上，夹具升销24布置为分别相邻于基底夹盘3或保护环34。在圆形基底的情况下，销24可以以120°的角距离布置。基底2的第二侧13位于晶片升销23上。在此实施例中，基底2的第一侧15包括绝缘层36。然而，绝缘层36不是强制性的，且不应限制本发明的范围。
如在图6的B)中所示来调节夹盘3的位置，从而基底升销23缩回，并且将基底2定位在夹盘3的第一表面14上并使基底2与夹盘3的第一表面14接触。设置夹盘3，直到已经达到第一目标基底距离TSD1。该TSD1接近于或等于所定义的工艺的所选的目标基底距离（TSD2）。
图6的B)示出了所谓的荫罩位置，其中，夹具4在基底2的第一侧15上方以距离x位于夹具升销24上，距离x可以是大约1mm至5mm。该距离可通过可调节的夹具升销24来选择。
在图6的B)所示的位置，首先接通处理气体，以使气体流动和压力稳定化。因为基底2未被夹持，所以未使用背侧气体。否则，背侧冷却气体会由于将基底提升而影响基底的稳定位置。
然后接通溅射功率。如果工艺对夹盘使用RF偏压，则优选地在如图6的B)所示的荫罩位置不接通溅射功率，这是因为第一薄金属层有助于防止对晶片上的器件造成可能的损坏。此外，在没有RF偏压的情况下，在未冷却的操作的该步骤中，对基底的热负荷较低。根据对晶片边缘的膜导电率和基底冷却的要求，在荫罩位置的溅射时间是总溅射时间的5%和50%之间的范围，优选地10%和20%之间的范围。对于电镀，根据材料的比电阻率，电镀10-50nm的全面沉积是足够的。
沉积覆盖基底2的第一侧15的整个表面的第一子层37。
在完成荫罩操作之后，调节夹盘3的位置，使得夹具4与基底2接触，从而将先前的距离x减小为0，如在图6的C)中所示。夹具升销24从夹具4缩回到距离y。因此，由基底2上的夹具4的重量至少被动地给予夹持力。当然，也可以应用对基底施加主动支撑力的主动装置。该定位步骤可以在切断溅射功率的情况下或在未切断溅射功率的情况下完成。然而，未切断处理气体。
在图6的C)所示的夹具位置，夹具4的重量向下支撑基底2，并将基底2固定到夹盘3，从而在此工艺步骤中，可以施加背侧气体。由最初的溅射步骤引入的温度差（ΔT）已经足以建立从基底到冷的夹盘（其可以保持在诸如-20℃的低温下）的热流。如果需要的话，则可以施加RF偏压。
在第一子层37上沉积另一子层38，以形成层或膜39。在此步骤中的膜厚度依赖于第二沉积步骤的时间跨度并依赖于将被处理的产品。例如，对于具有高纵横比（诸如在5:1至10:1的范围内）的硅通孔（TSV），会需要在1μm和2μm之间的膜厚度，以在孔中提供足够的晶种。
在沉积完成之后，在加载位置直接移动夹盘3以进行卸载，如图6的A)所示。
如上描述的定位步骤可以通过夹盘3、基底2和夹具4相对于目标6的各种相对移动来实现。夹具4可以借助于升销24移动，基底2可以借助于基底升销23和/或夹盘3相对于目标移动。根据工艺系统的构造，各种方式可用来建立相对移动。在本发明的实施例中，通过包括在控制单元19中的软件来辅助上面描述的工艺流程。建立夹盘高度作为软件参数以在生产中允许荫罩和夹具模式位置的自动运行顺序。
可调节的夹具升销布置用于选择荫罩位置或夹具位置。可以根据夹具环的内径和溅射材料的性质来选择夹具/荫罩环4和基底2之间的距离x。例如，与其它材料相比，Cu或Au通常更可能分散在边缘下方，对于夹具环4的低粘附系数将更多的材料提供到间隙中。例如对于Ti或Ta而言，这是不同的，其中，沉积通常更加在几何上渐变。
沉积到基底2的第一侧15上的层39具有两个子层。第一子层37延伸到基底2的边缘，第二子层38位于第一子层37上。第二子层38具有比第一子层37小的横向范围。层39在其中心具有更大的厚度并在外围具有较小的厚度。该层39可以用作其它层的随后电沉积的导电种子层，即，其它层将在种子层上生长。所述层可以包括金属或合金，并可以描述为金属（性）的。
图7更详细地示出了夹具4的形式。夹具4通常具有环形，并通常使用位于其下内边缘中（即，其接触基底2的区域中）的底切40。夹具4的绝对内径可以比晶片半径小2mm至3mm，即，对于300mm的晶片，夹具的直径将在294mm至296mm的范围内，即，由于夹具掩模的底切，实际接触直径略大。在那种情况下，对于Ti溅射，盘的在晶片上方的荫罩位置可以在晶片表面上方2mm至4mm，而对于Cu溅射，同样的距离则为1mm至3mm。
通常，朝向溅射源或间隙区域的表面41是粗糙的（例如，通过喷砂）或涂覆有层（例如，双线电弧喷射涂层），以防止生长膜在罩上分层。还如在图7中所示，需要准备夹具环4的内侧区域和间隙的表面42，以便提供分散沉积的良好粘附，如由虚线43所指示的。
保护环34是荫罩组的简单的可移动部件，并且也被准备用于沉积膜的良好粘附，如由虚线43所指示的。保护环34的上表面44比夹盘表面14低，从而基底2将不接触保护环34。然而，认真地（例如，用柔和的磨料机械地）清洗夹具4的接触基底2的部分25，以避免尖锐的边缘接触基底2和可能对基底2的损坏。
图8示出了如何通过可调节销24可使得夹具4可调节以用于宽的TSD范围。夹具4的夹具位置用虚线45指示，夹具位置用实线46指示。这种设计包括位于夹具4和同心圆筒形罩48之间的泵槽47，泵槽47为宽的TSD范围提供不变的泵送速度。
产生的一些优点如下：
在不应用ESC的情况下能够利用温度控制进行全面沉积。与晶片边缘的减小的膜厚度足以用于电镀的适当接触；
在夹持沉积之前的全面沉积步骤避免了对于一些表面或基底性质而可能发生的基底边缘附近的自发放电的任何风险（例如，电弧树）；
提供了在同一室中运行两步骤工艺的无夹持/夹持的可能性；
可以进行连续的工艺而无需中断功率；
提供了通过作为软件参数的夹盘高度对工艺顺序的简单控制；
该方法对于宽范围的TSD是可调节的，其中，通过具有可调节的高度的销来定位荫罩，尤其是同心的圆筒形罩装置提供了不变的泵送速度；
该方法可在无任何硬件改变的情况下应用于不同类型的基底，例如硅、玻璃或聚合物。

Claims (34)

1.一种用于向基底上沉积层的方法，所述方法包括：
将基底(2)插入到能够抽空的封闭箱(5)中，
将基底(2)设置在布置于封闭箱(5)内的夹具(4)和夹盘(3)之间，
在封闭箱(5)内的压力小于大气压的同时：
向封闭箱(5)供给处理气体；
在供给处理气体的同时并且在基底(2)的第一侧(15)与夹具(4)以一定距离隔开的同时，向基底(2)上沉积第一层(37)，
使夹具(4)与已经沉积在基底(2)上的第一层(37)物理接触，
在保持处理气体的供给的同时，在保持封闭箱(5)中的压力小于大气压的同时，并且在使夹具(4)与已经沉积在基底(2)上的第一层(37)物理接触且将基底(2)固定到夹盘(3)的同时，向第一层(37)上沉积其它层(38)。
2.根据权利要求1所述的方法，所述方法还包括：在沉积第一层(37)之前，放置基底(2)与夹盘(3)的第一表面(14)接触。
3.根据权利要求1所述的方法，所述方法还包括：
将基底(2)放置在能够移动的销(23)上，销(23)在夹盘(3)的第一表面(14)上方突出并使基底(2)与夹盘(3)隔开一定距离，
通过使销(23)缩回将基底(2)放置在夹盘(3)的第一表面(14)上。
4.根据权利要求1所述的方法，所述方法还包括：
在能够移动的销(24)上支撑夹具(4)，
使销(24)移动，
在第一层(37)的沉积期间在基底(2)的第一侧(15)上方设置以一定距离隔开的夹具(4)。
5.根据权利要求4所述的方法，其中，通过将销(24)缩回使夹具(4)与基底(2)的第一侧(15)接触。
6.根据权利要求1至5中的一项权利要求所述的方法，其中，夹盘(3)是能够移动的，夹盘(3)相对于夹具(4)移动，并且使夹具(4)与基底(2)的第一侧(15)接触。
7.根据权利要求1至5中的一项权利要求所述的方法，其中，在未对基底(2)进行主动冷却的情况下沉积第一层(37)。
8.根据权利要求1至5中的一项权利要求所述的方法，其中，在对基底(2)进行主动冷却的情况下沉积其它层(38)。
9.根据权利要求8所述的方法，其中，通过在基底(2)的第二侧上流通气体流来主动地冷却基底(2)。
10.根据权利要求1至5中的一项权利要求所述的方法，所述方法还包括：向包括将被沉积的材料在内的材料源(6)施加能量，从而材料源(6)的一部分被去除、沉积到基底(2)上并在基底(2)的第一侧(15)上形成层(39)。
11.根据权利要求10所述的方法，其中，材料源(6)的被去除的所述一部分包括沉积到基底(2)上且在基底(2)上形成金属层的一种或多种元素。
12.根据权利要求1至5中的一项权利要求所述的方法，所述方法还包括：将气态材料供给到封闭箱(5)，所述气态材料包括在封闭箱(5)内起反应的一种或多种化合物，从而释放出沉积到基底(2)上并形成层(39)的一种或多种元素。
13.根据权利要求12所述的方法，其中，沉积到基底(2)上的所述一种或多种元素在基底(2)上形成金属层。
14.根据权利要求1至5中的一项权利要求所述的方法，其中，基底(2)包括半导体。
15.根据权利要求14所述的方法，其中，基底(2)包括半导体晶片或者包含嵌入在塑料基质中的半导体部分的复合物。
16.根据权利要求1至5中的一项权利要求所述的方法，其中，在沉积期间监测第一层(37)的厚度，当第一层(37)具有预定的厚度时，使夹具(4)与基底(2)的第一侧(15)接触。
17.根据权利要求1至5中的一项权利要求所述的方法，其中，在第一时间跨度内沉积第一层(37)，在第二时间跨度内沉积其它层(38)。
18.根据权利要求17所述的方法，其中，在总的时间跨度内沉积第一层(37)和其它层(38)，第一时间跨度在总的时间跨度的1％和50％之间。
19.根据权利要求18所述的方法，其中，第一时间跨度在总的时间跨度的10％至20％之间。
20.一种用于在处理气体中在基底(2)上沉积层(37、38、39)的设备(1、26)，所述设备(1、26)包括：
夹盘(3)，包括用于支撑基底(2)的第一表面(14)；
夹具(4)，用于将基底(2)固定到夹盘(3)的第一表面(14)；
抽空的封闭箱(5)，封闭夹盘(3)和夹具(4)，并包括进口，处理气体能够通过进口进入封闭箱(5)中；
控制装置(19)，适于将夹盘(3)和夹具(4)中的至少一个相对于彼此且独立于彼此移动，从而在单个沉积工艺期间在保持处理气体的流动以及封闭箱(5)内的压力小于大气压的同时调节夹盘(3)和夹具(4)之间的间隔，
其中，控制装置(19)还适于：在单个沉积工艺期间在保持处理气体的流动以及封闭箱(5)内的压力小于大气压的同时，使夹具(4)与已经沉积在基底(2)上的第一层(37)物理接触并将基底(2)固定到夹盘(3)的第一表面(14)。
21.根据权利要求20所述的设备(1、26)，所述设备(1、26)还包括用于支撑夹具(4)的第一高度调节器，第一高度调节器能够移动以调节夹具(4)和夹盘(3)之间的距离。
22.根据权利要求21所述的设备(1、26)，所述设备(1、26)还包括用于支撑基底(2)的第二高度调节器，第二高度调节器能够移动以调节基底(2)和夹盘(3)之间的距离并调节基底(2)和夹具(4)之间的距离。
23.根据权利要求22所述的设备(1、26)，所述设备(1、26)还包括用于调节夹盘(3)相对于夹具(4)的高度的第三高度调节器(22)。
24.根据权利要求20所述的设备(1、26)，其中，夹具(4)包括位于面朝夹盘(3)的第一表面(14)的表面(25)中的底切(40)。
25.根据权利要求20至24中的一项权利要求所述的设备(1、26)，其中，夹具(4)包括远离夹盘(3)的第一表面(14)的粗糙表面(41)。
26.根据权利要求20至24中的一项权利要求所述的设备(1、26)，其中，夹具(4)包括面朝夹盘(3)的第一表面(14)的表面(25)，表面(25)大体上平行于夹盘(3)的第一表面(14)并提供用于将基底(2)固定到夹盘(3)的第一表面(14)的夹持表面。
27.根据权利要求22所述的设备(1、26)，其中，第一高度调节器和第二高度调节器中的至少一个包括能够沿着与夹具(4)的主平面和夹盘(3)的第一表面(14)垂直的方向移动的三个销。
28.根据权利要求20至24中的一项权利要求所述的设备(1、26)，所述设备(1、26)还包括用于冷却夹盘(3)的冷却装置(12)。
29.根据权利要求20至24中的一项权利要求所述的设备(1、26)，所述设备(1、26)还包括用于对封闭箱(5)进行抽空的抽空系统(10)。
30.根据权利要求20至24中的一项权利要求所述的设备(1、26)，所述设备(1、26)还包括用于支撑材料源(6)的支撑件(8)，材料源(6)包括将被沉积到基底(2)上的材料。
31.根据权利要求30所述的设备(1、26)，所述设备(1、26)还包括用于向材料源(6)供给能量并用于去除材料源(6)的一部分的能量源(9)。
32.根据权利要求29所述的设备(1、26)，所述设备(1、26)还包括用于将气态材料供给到能够抽空的封闭箱(5)的气体供给系统(11)，所述气态材料包括将以层的形式沉积到基底(2)上的一种或多种元素。
33.根据权利要求20至24中的一项权利要求所述的设备(1、26)，其中，控制装置(19)被编程为在预定的沉积时间之后相对于基底(2)移动夹具(4)并利用夹具(4)将基底(2)固定到夹盘(3)。
34.根据权利要求20至24中的一项权利要求所述的设备(1、26)，所述设备(1、26)还包括层厚度监测器，其中，控制装置(19)被编程为在层具有预定的厚度之后相对于基底(2)移动夹具(4)并利用夹具(4)将基底(2)固定到夹盘(3)。
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