KR102356740B1 - 스위치 소자 및 기억 장치 - Google Patents

스위치 소자 및 기억 장치 Download PDF

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Publication number
KR102356740B1
KR102356740B1 KR1020150003278A KR20150003278A KR102356740B1 KR 102356740 B1 KR102356740 B1 KR 102356740B1 KR 1020150003278 A KR1020150003278 A KR 1020150003278A KR 20150003278 A KR20150003278 A KR 20150003278A KR 102356740 B1 KR102356740 B1 KR 102356740B1
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South Korea
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layer
memory
switch
switch element
electrode
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KR20150086182A (ko
Inventor
카즈히로 오바
히로아키 세이
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H01L27/2427—
    • H01L27/02—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies

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  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020150003278A 2014-01-17 2015-01-09 스위치 소자 및 기억 장치 Expired - Fee Related KR102356740B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-007265 2014-01-17
JP2014007265A JP6151650B2 (ja) 2014-01-17 2014-01-17 記憶装置

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KR20150086182A KR20150086182A (ko) 2015-07-27
KR102356740B1 true KR102356740B1 (ko) 2022-01-28

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US (3) US9543512B2 (enExample)
JP (1) JP6151650B2 (enExample)
KR (1) KR102356740B1 (enExample)
TW (1) TWI661535B (enExample)

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US10290801B2 (en) * 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
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KR102453349B1 (ko) 2016-02-25 2022-10-07 삼성전자주식회사 가변 저항 메모리 장치 및 이의 제조 방법
KR102578481B1 (ko) * 2016-03-15 2023-09-14 삼성전자주식회사 반도체 메모리 소자 및 이의 제조방법
KR102495000B1 (ko) * 2016-03-18 2023-02-02 삼성전자주식회사 반도체 소자 및 이의 제조방법
KR102483704B1 (ko) * 2016-03-30 2023-01-02 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법
KR101889600B1 (ko) * 2016-03-31 2018-08-17 연세대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
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KR102530067B1 (ko) * 2016-07-28 2023-05-08 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조 방법
KR102584288B1 (ko) 2016-08-03 2023-09-27 삼성전자주식회사 비휘발성 메모리 장치
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KR102366798B1 (ko) 2017-06-13 2022-02-25 삼성전자주식회사 반도체 소자
US10672833B2 (en) 2017-07-26 2020-06-02 Micron Technology, Inc. Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices
KR102465179B1 (ko) 2018-01-18 2022-11-08 에스케이하이닉스 주식회사 선택 소자, 이의 제조 방법 및 이를 포함하는 비휘발성 메모리 소자
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KR102630031B1 (ko) * 2018-10-05 2024-01-30 삼성전자주식회사 가변 저항 메모리 장치
KR20200041031A (ko) 2018-10-11 2020-04-21 삼성전자주식회사 가변 저항 메모리 소자
KR102130219B1 (ko) * 2018-10-30 2020-07-03 연세대학교 산학협력단 비선형 스위치 소자, 이의 제조 방법 및 이를 포함하는 비휘발성 메모리 소자
JP2021103749A (ja) 2019-12-25 2021-07-15 キオクシア株式会社 抵抗変化素子
US11271155B2 (en) * 2020-03-10 2022-03-08 International Business Machines Corporation Suppressing oxidation of silicon germanium selenium arsenide material
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Also Published As

Publication number Publication date
KR20150086182A (ko) 2015-07-27
TW201535680A (zh) 2015-09-16
JP6151650B2 (ja) 2017-06-21
US20170098683A1 (en) 2017-04-06
JP2015135917A (ja) 2015-07-27
US20150207066A1 (en) 2015-07-23
US9543512B2 (en) 2017-01-10
TWI661535B (zh) 2019-06-01
US20170098684A1 (en) 2017-04-06

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