JP6151650B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP6151650B2
JP6151650B2 JP2014007265A JP2014007265A JP6151650B2 JP 6151650 B2 JP6151650 B2 JP 6151650B2 JP 2014007265 A JP2014007265 A JP 2014007265A JP 2014007265 A JP2014007265 A JP 2014007265A JP 6151650 B2 JP6151650 B2 JP 6151650B2
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Japan
Prior art keywords
layer
memory
storage device
switch
electrode
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Expired - Fee Related
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JP2014007265A
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English (en)
Japanese (ja)
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JP2015135917A5 (enExample
JP2015135917A (ja
Inventor
大場　和博
和博 大場
宏彰 清
宏彰 清
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2014007265A priority Critical patent/JP6151650B2/ja
Priority to TW103144866A priority patent/TWI661535B/zh
Priority to US14/590,014 priority patent/US9543512B2/en
Priority to KR1020150003278A priority patent/KR102356740B1/ko
Publication of JP2015135917A publication Critical patent/JP2015135917A/ja
Publication of JP2015135917A5 publication Critical patent/JP2015135917A5/ja
Priority to US15/379,390 priority patent/US20170098684A1/en
Priority to US15/379,209 priority patent/US20170098683A1/en
Application granted granted Critical
Publication of JP6151650B2 publication Critical patent/JP6151650B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies

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  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2014007265A 2014-01-17 2014-01-17 記憶装置 Expired - Fee Related JP6151650B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014007265A JP6151650B2 (ja) 2014-01-17 2014-01-17 記憶装置
TW103144866A TWI661535B (zh) 2014-01-17 2014-12-22 切換裝置及儲存單元
US14/590,014 US9543512B2 (en) 2014-01-17 2015-01-06 Switch device and storage unit
KR1020150003278A KR102356740B1 (ko) 2014-01-17 2015-01-09 스위치 소자 및 기억 장치
US15/379,209 US20170098683A1 (en) 2014-01-17 2016-12-14 Switch device and storage unit
US15/379,390 US20170098684A1 (en) 2014-01-17 2016-12-14 Switch device and storage unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014007265A JP6151650B2 (ja) 2014-01-17 2014-01-17 記憶装置

Publications (3)

Publication Number Publication Date
JP2015135917A JP2015135917A (ja) 2015-07-27
JP2015135917A5 JP2015135917A5 (enExample) 2016-04-14
JP6151650B2 true JP6151650B2 (ja) 2017-06-21

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JP2014007265A Expired - Fee Related JP6151650B2 (ja) 2014-01-17 2014-01-17 記憶装置

Country Status (4)

Country Link
US (3) US9543512B2 (enExample)
JP (1) JP6151650B2 (enExample)
KR (1) KR102356740B1 (enExample)
TW (1) TWI661535B (enExample)

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US10373653B2 (en) 2017-06-13 2019-08-06 Samsung Electronics Co., Ltd. Semiconductor device having first memory section and second memory section stacked vertically on each other
US10861902B2 (en) 2017-06-13 2020-12-08 Samsung Electronics Co., Ltd. Semiconductor device having magnetic tunnel junction pattern
US12102012B2 (en) 2021-03-12 2024-09-24 Kioxia Corporation Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

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US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置
US10290801B2 (en) * 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
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KR102453349B1 (ko) 2016-02-25 2022-10-07 삼성전자주식회사 가변 저항 메모리 장치 및 이의 제조 방법
KR102578481B1 (ko) * 2016-03-15 2023-09-14 삼성전자주식회사 반도체 메모리 소자 및 이의 제조방법
KR102495000B1 (ko) * 2016-03-18 2023-02-02 삼성전자주식회사 반도체 소자 및 이의 제조방법
KR102483704B1 (ko) * 2016-03-30 2023-01-02 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법
KR101889600B1 (ko) * 2016-03-31 2018-08-17 연세대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
JP2017224688A (ja) * 2016-06-14 2017-12-21 ソニー株式会社 回路素子、記憶装置、電子機器、回路素子への情報の書き込み方法、および回路素子からの情報の読み出し方法
KR102530067B1 (ko) * 2016-07-28 2023-05-08 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조 방법
KR102584288B1 (ko) 2016-08-03 2023-09-27 삼성전자주식회사 비휘발성 메모리 장치
US11348973B2 (en) * 2016-09-23 2022-05-31 Intel Corporation Threshold switching selector based memory
US11183633B2 (en) 2016-10-04 2021-11-23 Sony Semiconductor Solutions Corporation Switch device, storage apparatus, and memory system
US10658588B2 (en) * 2017-04-06 2020-05-19 Sony Corporation Memory cell switch device
US10672833B2 (en) 2017-07-26 2020-06-02 Micron Technology, Inc. Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices
KR102465179B1 (ko) 2018-01-18 2022-11-08 에스케이하이닉스 주식회사 선택 소자, 이의 제조 방법 및 이를 포함하는 비휘발성 메모리 소자
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CN114242748A (zh) * 2021-12-20 2022-03-25 厦门半导体工业技术研发有限公司 一种存储单元组及其制造方法
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US10373653B2 (en) 2017-06-13 2019-08-06 Samsung Electronics Co., Ltd. Semiconductor device having first memory section and second memory section stacked vertically on each other
US10861902B2 (en) 2017-06-13 2020-12-08 Samsung Electronics Co., Ltd. Semiconductor device having magnetic tunnel junction pattern
US11361798B2 (en) 2017-06-13 2022-06-14 Samsung Electronics Co., Ltd. Semiconductor device
US11557631B2 (en) 2017-06-13 2023-01-17 Samsung Electronics Co., Ltd. Semiconductor device having first memory section and second memory section
US12102012B2 (en) 2021-03-12 2024-09-24 Kioxia Corporation Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Also Published As

Publication number Publication date
KR20150086182A (ko) 2015-07-27
TW201535680A (zh) 2015-09-16
US20170098683A1 (en) 2017-04-06
JP2015135917A (ja) 2015-07-27
US20150207066A1 (en) 2015-07-23
US9543512B2 (en) 2017-01-10
KR102356740B1 (ko) 2022-01-28
TWI661535B (zh) 2019-06-01
US20170098684A1 (en) 2017-04-06

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