KR102220600B1 - 마스크 블랭크스, 하프톤 마스크, 마스크 블랭크스의 제조 방법, 및 하프톤 마스크의 제조 방법 - Google Patents
마스크 블랭크스, 하프톤 마스크, 마스크 블랭크스의 제조 방법, 및 하프톤 마스크의 제조 방법 Download PDFInfo
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- KR102220600B1 KR102220600B1 KR1020190097160A KR20190097160A KR102220600B1 KR 102220600 B1 KR102220600 B1 KR 102220600B1 KR 1020190097160 A KR1020190097160 A KR 1020190097160A KR 20190097160 A KR20190097160 A KR 20190097160A KR 102220600 B1 KR102220600 B1 KR 102220600B1
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- South Korea
- Prior art keywords
- layer
- etching
- etching stopper
- mask
- halftone
- Prior art date
Links
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018191290A JP6756796B2 (ja) | 2018-10-09 | 2018-10-09 | マスクブランクス、ハーフトーンマスク、製造方法 |
JPJP-P-2018-191290 | 2018-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200040656A KR20200040656A (ko) | 2020-04-20 |
KR102220600B1 true KR102220600B1 (ko) | 2021-02-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190097160A KR102220600B1 (ko) | 2018-10-09 | 2019-08-09 | 마스크 블랭크스, 하프톤 마스크, 마스크 블랭크스의 제조 방법, 및 하프톤 마스크의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6756796B2 (zh) |
KR (1) | KR102220600B1 (zh) |
CN (1) | CN111025840B (zh) |
TW (1) | TWI740183B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7254599B2 (ja) * | 2019-04-15 | 2023-04-10 | アルバック成膜株式会社 | マスクブランクスの製造方法および位相シフトマスクの製造方法 |
TWI785552B (zh) * | 2020-04-28 | 2022-12-01 | 日商Sk電子股份有限公司 | 光罩的製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014103875A1 (ja) | 2012-12-27 | 2014-07-03 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法 |
JP2014211501A (ja) | 2013-04-17 | 2014-11-13 | アルバック成膜株式会社 | 位相シフトマスクの製造方法および位相シフトマスク |
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JP4450715B2 (ja) | 2004-10-08 | 2010-04-14 | 三菱電機株式会社 | アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法 |
US7473614B2 (en) * | 2004-11-12 | 2009-01-06 | Intel Corporation | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer |
JP4834203B2 (ja) * | 2005-09-30 | 2011-12-14 | Hoya株式会社 | フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
JP2007271661A (ja) * | 2006-03-30 | 2007-10-18 | Hoya Corp | マスクブランク及びハーフトーン型位相シフトマスク |
JP4766518B2 (ja) * | 2006-03-31 | 2011-09-07 | Hoya株式会社 | マスクブランク及びフォトマスク |
JP4737426B2 (ja) * | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
JP4987075B2 (ja) * | 2007-11-01 | 2012-07-25 | アルバック成膜株式会社 | ハーフトーンマスク、ハーフトーンマスクブランクス、及びハーフトーンマスクの製造方法 |
CN101548238A (zh) * | 2007-11-06 | 2009-09-30 | 吉奥马科技有限公司 | 光掩模用基板以及光掩模和该光掩模的制造方法 |
JP4845978B2 (ja) * | 2008-02-27 | 2011-12-28 | Hoya株式会社 | フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法 |
JP5231956B2 (ja) * | 2008-11-25 | 2013-07-10 | アルバック成膜株式会社 | ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法 |
JP5662032B2 (ja) * | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | マスクブランクス及びハーフトーンマスク |
JP5739375B2 (ja) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法 |
WO2013190786A1 (ja) * | 2012-06-20 | 2013-12-27 | アルバック成膜株式会社 | 位相シフトマスクブランクス、位相シフトマスク及びその製造方法 |
KR101269062B1 (ko) * | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법 |
JP6101646B2 (ja) * | 2013-02-26 | 2017-03-22 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
KR101722554B1 (ko) * | 2015-09-16 | 2017-04-21 | 주식회사 아스티엄 | 스마트 벤딩머신 장치 및 이를 포함하는 스마트 벤딩머신 관리 시스템 |
JP6398927B2 (ja) * | 2015-09-18 | 2018-10-03 | 信越化学工業株式会社 | フォトマスクブランク、その製造方法及びフォトマスク |
JP6626813B2 (ja) * | 2016-03-16 | 2019-12-25 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
JP2017182052A (ja) * | 2016-03-24 | 2017-10-05 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク及び表示装置の製造方法 |
CN107229181B (zh) * | 2016-03-24 | 2021-07-20 | Hoya株式会社 | 相移掩模坯板、相移掩模及显示装置的制造方法 |
JP6514143B2 (ja) * | 2016-05-18 | 2019-05-15 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
JP6698438B2 (ja) * | 2016-06-17 | 2020-05-27 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 |
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JP7176843B2 (ja) * | 2017-01-18 | 2022-11-22 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 |
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