KR101943291B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101943291B1
KR101943291B1 KR1020120073322A KR20120073322A KR101943291B1 KR 101943291 B1 KR101943291 B1 KR 101943291B1 KR 1020120073322 A KR1020120073322 A KR 1020120073322A KR 20120073322 A KR20120073322 A KR 20120073322A KR 101943291 B1 KR101943291 B1 KR 101943291B1
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South Korea
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film
pair
transistor
insulating film
semiconductor
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Korean (ko)
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KR20130006340A (ko
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마스미 노무라
다쓰지 니시지마
고세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
KR1020120073322A 2011-07-08 2012-07-05 반도체 장치 Expired - Fee Related KR101943291B1 (ko)

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JP2011151528 2011-07-08
JPJP-P-2011-151528 2011-07-08

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KR20130006340A KR20130006340A (ko) 2013-01-16
KR101943291B1 true KR101943291B1 (ko) 2019-01-29

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KR1020120073322A Expired - Fee Related KR101943291B1 (ko) 2011-07-08 2012-07-05 반도체 장치

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US (1) US9490241B2 (enExample)
JP (1) JP6021477B2 (enExample)
KR (1) KR101943291B1 (enExample)
TW (1) TWI549262B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9406348B2 (en) 2013-12-26 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory cell including transistor and capacitor
KR102332469B1 (ko) 2014-03-28 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
US9711510B2 (en) 2014-04-30 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
JP6650888B2 (ja) 2015-02-06 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
CN104795400B (zh) * 2015-02-12 2018-10-30 合肥鑫晟光电科技有限公司 阵列基板制造方法、阵列基板和显示装置
US11189736B2 (en) * 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN106449419A (zh) * 2016-12-08 2017-02-22 西安电子科技大学 基于Ga2O3材料的U型栅MOSFET及其制备方法
CN112823415A (zh) 2018-10-26 2021-05-18 株式会社半导体能源研究所 半导体装置以及半导体装置的制造方法
US11107929B2 (en) 2018-12-21 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN112002357B (zh) * 2020-08-13 2023-09-26 长江存储科技有限责任公司 用于操作半导体器件的方法及半导体器件

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