KR101464613B1 - 액처리 장치, 액처리 방법 및 기억 매체 - Google Patents

액처리 장치, 액처리 방법 및 기억 매체 Download PDF

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KR101464613B1
KR101464613B1 KR1020120025403A KR20120025403A KR101464613B1 KR 101464613 B1 KR101464613 B1 KR 101464613B1 KR 1020120025403 A KR1020120025403 A KR 1020120025403A KR 20120025403 A KR20120025403 A KR 20120025403A KR 101464613 B1 KR101464613 B1 KR 101464613B1
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South Korea
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gas
substrate
liquid
processing
processed
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Korean (ko)
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KR20120106584A (ko
Inventor
켄지 니시
카즈히로 다케시타
노부히로 오가타
사토루 다나카
쇼고 미조타
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도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020120025403A 2011-03-16 2012-03-13 액처리 장치, 액처리 방법 및 기억 매체 Ceased KR101464613B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011058240A JP5472169B2 (ja) 2011-03-16 2011-03-16 液処理装置、液処理方法および記憶媒体
JPJP-P-2011-058240 2011-03-16

Publications (2)

Publication Number Publication Date
KR20120106584A KR20120106584A (ko) 2012-09-26
KR101464613B1 true KR101464613B1 (ko) 2014-11-24

Family

ID=46814969

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KR1020120025403A Ceased KR101464613B1 (ko) 2011-03-16 2012-03-13 액처리 장치, 액처리 방법 및 기억 매체

Country Status (5)

Country Link
US (1) US9305767B2 (https=)
JP (1) JP5472169B2 (https=)
KR (1) KR101464613B1 (https=)
CN (1) CN102683245B (https=)
TW (1) TWI455230B (https=)

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JP6026241B2 (ja) * 2012-11-20 2016-11-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5453561B1 (ja) * 2012-12-20 2014-03-26 東京エレクトロン株式会社 液処理装置、液処理方法及び液処理用記憶媒体
JP6010457B2 (ja) * 2012-12-28 2016-10-19 東京エレクトロン株式会社 液処理装置および薬液回収方法
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
US9446467B2 (en) * 2013-03-14 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Integrate rinse module in hybrid bonding platform
JP5980704B2 (ja) * 2013-03-15 2016-08-31 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR101579507B1 (ko) * 2013-05-08 2015-12-22 세메스 주식회사 기판 처리 장치
JP6281161B2 (ja) * 2013-09-27 2018-02-21 東京エレクトロン株式会社 液処理装置
US10067046B2 (en) * 2014-02-03 2018-09-04 A&D Company, Limited Containment workstation for hazardous fine particles
WO2015129623A1 (ja) 2014-02-27 2015-09-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6184890B2 (ja) * 2014-03-07 2017-08-23 東京エレクトロン株式会社 基板液処理装置、基板液処理方法及び記憶媒体
JP6371716B2 (ja) * 2014-04-01 2018-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP6411172B2 (ja) * 2014-10-24 2018-10-24 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR102347973B1 (ko) * 2014-12-30 2022-01-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6482979B2 (ja) * 2015-07-29 2019-03-13 東京エレクトロン株式会社 液処理装置
JP2017157800A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 液処理方法、基板処理装置、及び記憶媒体
JP6739285B2 (ja) * 2016-08-24 2020-08-12 東京エレクトロン株式会社 基板処理装置
US10957529B2 (en) * 2016-11-28 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for drying wafer with gaseous fluid
JP6890029B2 (ja) * 2017-03-31 2021-06-18 東京エレクトロン株式会社 基板搬送装置及び基板搬送方法
JP6869093B2 (ja) * 2017-04-27 2021-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
KR102387542B1 (ko) * 2017-05-11 2022-04-19 주식회사 케이씨텍 에어공급부 및 기판 처리 장치
KR102366180B1 (ko) * 2017-07-04 2022-02-22 세메스 주식회사 기판 처리 장치
WO2019012978A1 (ja) * 2017-07-10 2019-01-17 東京エレクトロン株式会社 基板搬送装置および基板搬送方法
JP6887912B2 (ja) * 2017-08-07 2021-06-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6925213B2 (ja) * 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7125589B2 (ja) * 2018-03-15 2022-08-25 シンフォニアテクノロジー株式会社 Ｅｆｅｍシステム及びｅｆｅｍシステムにおけるガス供給方法
JP7213624B2 (ja) * 2018-05-01 2023-01-27 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7189013B2 (ja) * 2018-12-28 2022-12-13 東京エレクトロン株式会社 基板処理装置および基板処理装置の運転方法
JP7359610B2 (ja) * 2019-09-13 2023-10-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102357066B1 (ko) * 2019-10-31 2022-02-03 세메스 주식회사 기판 처리 장치
CN111151489A (zh) * 2019-12-31 2020-05-15 中威新能源(成都)有限公司 一种含有臭氧的喷淋式清洗硅片的方法
CN115151378A (zh) * 2020-03-06 2022-10-04 东京毅力科创株式会社 磨削装置
KR102896865B1 (ko) * 2020-12-30 2025-12-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7592500B2 (ja) * 2021-01-18 2024-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
US12521775B2 (en) * 2021-08-30 2026-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device
JP7839667B2 (ja) * 2022-03-18 2026-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102746663B1 (ko) * 2022-08-23 2024-12-27 주식회사 저스템 복수의 팬필터유닛을 포함하는 efem
KR102894267B1 (ko) * 2022-08-23 2025-12-02 주식회사 저스템 분리된 기체유입구들을 가지는 efem
KR102790874B1 (ko) * 2022-09-27 2025-04-04 주식회사 저스템 수직층류생성기를 이용하여 습도를 관리하는 efem
KR102872125B1 (ko) * 2022-12-02 2025-10-17 주식회사 저스템 국소제습장치를 포함하는 습도제어 efem
KR102872124B1 (ko) * 2023-02-10 2025-10-17 주식회사 저스템 Efem 습도제어를 위한 국소 습도제어장치

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JPH05166712A (ja) * 1991-12-18 1993-07-02 Dainippon Screen Mfg Co Ltd 回転塗布方法
JPH11151462A (ja) * 1997-09-12 1999-06-08 Toshiba Corp 回転塗布方法及び回転塗布装置
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JPH05166712A (ja) * 1991-12-18 1993-07-02 Dainippon Screen Mfg Co Ltd 回転塗布方法
JPH11151462A (ja) * 1997-09-12 1999-06-08 Toshiba Corp 回転塗布方法及び回転塗布装置
KR20090045005A (ko) * 2007-10-31 2009-05-07 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치 및 기판처리방법

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TWI455230B (zh) 2014-10-01
US20120234356A1 (en) 2012-09-20
CN102683245A (zh) 2012-09-19
TW201308468A (zh) 2013-02-16
KR20120106584A (ko) 2012-09-26
US9305767B2 (en) 2016-04-05
JP5472169B2 (ja) 2014-04-16
CN102683245B (zh) 2015-10-28
JP2012195444A (ja) 2012-10-11

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