KR101250153B1 - 트리메틸갈륨, 이의 제조 방법 및 트리메틸갈륨으로부터형성된 질화갈륨 박막 - Google Patents

트리메틸갈륨, 이의 제조 방법 및 트리메틸갈륨으로부터형성된 질화갈륨 박막 Download PDF

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KR101250153B1
KR101250153B1 KR1020050096398A KR20050096398A KR101250153B1 KR 101250153 B1 KR101250153 B1 KR 101250153B1 KR 1020050096398 A KR1020050096398 A KR 1020050096398A KR 20050096398 A KR20050096398 A KR 20050096398A KR 101250153 B1 KR101250153 B1 KR 101250153B1
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trimethylgallium
ppm
tma
content
trimethylaluminum
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Korean (ko)
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KR20060053239A (ko
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마사노부 마츠바라
켄 시마다
나오히로 니시가와
요이치 카도타
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스미또모 가가꾸 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020050096398A 2004-10-13 2005-10-13 트리메틸갈륨, 이의 제조 방법 및 트리메틸갈륨으로부터형성된 질화갈륨 박막 Expired - Fee Related KR101250153B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004298564A JP4470682B2 (ja) 2004-10-13 2004-10-13 トリメチルガリウムの製造方法
JPJP-P-2004-00298564 2004-10-13

Publications (2)

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KR20060053239A KR20060053239A (ko) 2006-05-19
KR101250153B1 true KR101250153B1 (ko) 2013-04-04

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Country Status (7)

Country Link
US (1) US20060075959A1 (enExample)
JP (1) JP4470682B2 (enExample)
KR (1) KR101250153B1 (enExample)
CN (1) CN1763049B (enExample)
DE (1) DE102005048680A1 (enExample)
GB (1) GB2420118B (enExample)
TW (1) TWI363059B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008024617A (ja) 2006-07-19 2008-02-07 Ube Ind Ltd 高純度トリアルキルアルミニウム及びその製法
JP4462251B2 (ja) * 2006-08-17 2010-05-12 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
JP2008050268A (ja) * 2006-08-22 2008-03-06 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008081451A (ja) * 2006-09-28 2008-04-10 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008263023A (ja) * 2007-04-11 2008-10-30 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法
JP2008266196A (ja) * 2007-04-19 2008-11-06 Nippon Shokubai Co Ltd ボラジン化合物の製造方法
JP2009126835A (ja) * 2007-11-27 2009-06-11 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
KR100965270B1 (ko) * 2008-07-04 2010-06-22 주식회사 한솔케미칼 새로운 전자 주개 리간드를 가지는 갈륨 착화합물 및 이의제조방법
JP5423039B2 (ja) * 2009-02-23 2014-02-19 宇部興産株式会社 高純度トリアルキルガリウム及びその製造方法
JP5348186B2 (ja) * 2011-06-16 2013-11-20 宇部興産株式会社 高純度トリアルキルガリウム及びその製法
DE102012013941A1 (de) 2012-07-16 2014-01-16 Umicore Ag & Co. Kg Verfahren zur Herstellung von Galliumtrialkylverbindungen
TWI632149B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iii a族金屬的三烷基化合物之製法
KR101326554B1 (ko) * 2012-06-22 2013-11-07 한국기초과학지원연구원 트리메틸갈륨(ＴＭＧａ)의 재활용 방법
KR101436590B1 (ko) * 2013-05-28 2014-09-02 한국기초과학지원연구원 회수 ＴＭＩｎ 재이용방법
JP5761401B2 (ja) * 2014-02-27 2015-08-12 宇部興産株式会社 高純度トリアルキルガリウム及びその製法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288885A (en) * 1991-11-19 1994-02-22 Shell Research Limited Purification of tri-alkyl compounds of Group 3a metals
JP2002533348A (ja) * 1998-12-19 2002-10-08 エピケム リミテッド 有機金属化合物の製造のための改良された方法および装置

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JPS62132888A (ja) * 1985-12-03 1987-06-16 Sumitomo Chem Co Ltd 有機金属化合物の精製方法
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
US5455364A (en) * 1993-12-14 1995-10-03 Sumitomo Chemical Company, Ltd. Process for removing an impurity in organometallic compound
JP3230029B2 (ja) * 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
JP2927685B2 (ja) * 1994-08-19 1999-07-28 信越化学工業株式会社 有機金属化合物の精製方法
MY112590A (en) * 1994-09-02 2001-07-31 Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom Semi-conductor devices and their production
WO2000071551A2 (en) * 1999-05-21 2000-11-30 Akzo Nobel N.V. Purification of an organometallic compound by recrystallization
TW574762B (en) * 2002-10-16 2004-02-01 Univ Nat Cheng Kung Method for growing monocrystal GaN on silicon substrate
JP4488186B2 (ja) * 2004-06-18 2010-06-23 信越化学工業株式会社 トリメチルアルミニウムの精製方法
JP2006001896A (ja) * 2004-06-18 2006-01-05 Shin Etsu Chem Co Ltd 高純度トリメチルアルミニウム及びトリメチルアルミニウムの精製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288885A (en) * 1991-11-19 1994-02-22 Shell Research Limited Purification of tri-alkyl compounds of Group 3a metals
JP2002533348A (ja) * 1998-12-19 2002-10-08 エピケム リミテッド 有機金属化合物の製造のための改良された方法および装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Journal of Cluster Science, 2002, Volume 13, Number 4, 631-636 *
Journal of Cluster Science, 2002, Volume 13, Number 4, 631-636*

Also Published As

Publication number Publication date
GB0520663D0 (en) 2005-11-16
US20060075959A1 (en) 2006-04-13
DE102005048680A1 (de) 2006-04-20
TWI363059B (en) 2012-05-01
TW200611908A (en) 2006-04-16
GB2420118B (en) 2006-12-13
CN1763049A (zh) 2006-04-26
KR20060053239A (ko) 2006-05-19
GB2420118A (en) 2006-05-17
CN1763049B (zh) 2011-12-14
JP2006111546A (ja) 2006-04-27
JP4470682B2 (ja) 2010-06-02

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