GB2420118B - A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium - Google Patents

A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Info

Publication number
GB2420118B
GB2420118B GB0520663A GB0520663A GB2420118B GB 2420118 B GB2420118 B GB 2420118B GB 0520663 A GB0520663 A GB 0520663A GB 0520663 A GB0520663 A GB 0520663A GB 2420118 B GB2420118 B GB 2420118B
Authority
GB
United Kingdom
Prior art keywords
trimethylgallium
producing
thin film
same
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0520663A
Other languages
English (en)
Other versions
GB0520663D0 (en
GB2420118A (en
Inventor
Masanobu Matsubara
Ken Shimada
Naohiro Nishikawa
Yoichi Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of GB0520663D0 publication Critical patent/GB0520663D0/en
Publication of GB2420118A publication Critical patent/GB2420118A/en
Application granted granted Critical
Publication of GB2420118B publication Critical patent/GB2420118B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
GB0520663A 2004-10-13 2005-10-11 A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium Expired - Fee Related GB2420118B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004298564A JP4470682B2 (ja) 2004-10-13 2004-10-13 トリメチルガリウムの製造方法

Publications (3)

Publication Number Publication Date
GB0520663D0 GB0520663D0 (en) 2005-11-16
GB2420118A GB2420118A (en) 2006-05-17
GB2420118B true GB2420118B (en) 2006-12-13

Family

ID=35430195

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0520663A Expired - Fee Related GB2420118B (en) 2004-10-13 2005-10-11 A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium

Country Status (7)

Country Link
US (1) US20060075959A1 (enExample)
JP (1) JP4470682B2 (enExample)
KR (1) KR101250153B1 (enExample)
CN (1) CN1763049B (enExample)
DE (1) DE102005048680A1 (enExample)
GB (1) GB2420118B (enExample)
TW (1) TWI363059B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008024617A (ja) 2006-07-19 2008-02-07 Ube Ind Ltd 高純度トリアルキルアルミニウム及びその製法
JP4462251B2 (ja) * 2006-08-17 2010-05-12 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
JP2008050268A (ja) * 2006-08-22 2008-03-06 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008081451A (ja) * 2006-09-28 2008-04-10 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008263023A (ja) * 2007-04-11 2008-10-30 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法
JP2008266196A (ja) * 2007-04-19 2008-11-06 Nippon Shokubai Co Ltd ボラジン化合物の製造方法
JP2009126835A (ja) * 2007-11-27 2009-06-11 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
KR100965270B1 (ko) * 2008-07-04 2010-06-22 주식회사 한솔케미칼 새로운 전자 주개 리간드를 가지는 갈륨 착화합물 및 이의제조방법
JP5423039B2 (ja) * 2009-02-23 2014-02-19 宇部興産株式会社 高純度トリアルキルガリウム及びその製造方法
JP5348186B2 (ja) * 2011-06-16 2013-11-20 宇部興産株式会社 高純度トリアルキルガリウム及びその製法
DE102012013941A1 (de) 2012-07-16 2014-01-16 Umicore Ag & Co. Kg Verfahren zur Herstellung von Galliumtrialkylverbindungen
TWI632149B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iii a族金屬的三烷基化合物之製法
KR101326554B1 (ko) * 2012-06-22 2013-11-07 한국기초과학지원연구원 트리메틸갈륨(ＴＭＧａ)의 재활용 방법
KR101436590B1 (ko) * 2013-05-28 2014-09-02 한국기초과학지원연구원 회수 ＴＭＩｎ 재이용방법
JP5761401B2 (ja) * 2014-02-27 2015-08-12 宇部興産株式会社 高純度トリアルキルガリウム及びその製法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183651A (en) * 1985-12-03 1987-06-10 Sumitomo Chemical Co Purification of organometallic compounds
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
WO1996007661A1 (en) * 1994-09-02 1996-03-14 The Secretary Of State For Defence Formation of a metalorganic compound for growing epitaxial semiconductor layers
EP1616872A2 (en) * 2004-06-18 2006-01-18 Shin-Etsu Chemical Co., Ltd. Purification method for organometallic compounds and organometallic compounds obtained therefrom

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
TW217415B (enExample) * 1991-11-19 1993-12-11 Shell Internat Res Schappej B V
US5455364A (en) * 1993-12-14 1995-10-03 Sumitomo Chemical Company, Ltd. Process for removing an impurity in organometallic compound
JP3230029B2 (ja) * 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
JP2927685B2 (ja) * 1994-08-19 1999-07-28 信越化学工業株式会社 有機金属化合物の精製方法
GB2344822A (en) * 1998-12-19 2000-06-21 Epichem Ltd Organometallic compound production using distillation
WO2000071551A2 (en) * 1999-05-21 2000-11-30 Akzo Nobel N.V. Purification of an organometallic compound by recrystallization
TW574762B (en) * 2002-10-16 2004-02-01 Univ Nat Cheng Kung Method for growing monocrystal GaN on silicon substrate
JP2006001896A (ja) * 2004-06-18 2006-01-05 Shin Etsu Chem Co Ltd 高純度トリメチルアルミニウム及びトリメチルアルミニウムの精製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183651A (en) * 1985-12-03 1987-06-10 Sumitomo Chemical Co Purification of organometallic compounds
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
WO1996007661A1 (en) * 1994-09-02 1996-03-14 The Secretary Of State For Defence Formation of a metalorganic compound for growing epitaxial semiconductor layers
EP1616872A2 (en) * 2004-06-18 2006-01-18 Shin-Etsu Chemical Co., Ltd. Purification method for organometallic compounds and organometallic compounds obtained therefrom

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Crystal Growth 1988, 93, pp.543-549 "Residual impurities in epitaxial layers .." - Hata et al. *

Also Published As

Publication number Publication date
GB0520663D0 (en) 2005-11-16
US20060075959A1 (en) 2006-04-13
DE102005048680A1 (de) 2006-04-20
TWI363059B (en) 2012-05-01
TW200611908A (en) 2006-04-16
CN1763049A (zh) 2006-04-26
KR101250153B1 (ko) 2013-04-04
KR20060053239A (ko) 2006-05-19
GB2420118A (en) 2006-05-17
CN1763049B (zh) 2011-12-14
JP2006111546A (ja) 2006-04-27
JP4470682B2 (ja) 2010-06-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20141011