JP4470682B2 - トリメチルガリウムの製造方法 - Google Patents

トリメチルガリウムの製造方法 Download PDF

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Publication number
JP4470682B2
JP4470682B2 JP2004298564A JP2004298564A JP4470682B2 JP 4470682 B2 JP4470682 B2 JP 4470682B2 JP 2004298564 A JP2004298564 A JP 2004298564A JP 2004298564 A JP2004298564 A JP 2004298564A JP 4470682 B2 JP4470682 B2 JP 4470682B2
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JP2004298564A
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English (en)
Japanese (ja)
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JP2006111546A5 (enExample
JP2006111546A (ja
Inventor
政信 松原
健 島田
直宏 西川
陽一 門田
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to JP2004298564A priority Critical patent/JP4470682B2/ja
Priority to DE102005048680A priority patent/DE102005048680A1/de
Priority to GB0520663A priority patent/GB2420118B/en
Priority to US11/246,550 priority patent/US20060075959A1/en
Priority to KR1020050096398A priority patent/KR101250153B1/ko
Priority to TW094135671A priority patent/TWI363059B/zh
Priority to CN2005101083835A priority patent/CN1763049B/zh
Publication of JP2006111546A publication Critical patent/JP2006111546A/ja
Publication of JP2006111546A5 publication Critical patent/JP2006111546A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004298564A 2004-10-13 2004-10-13 トリメチルガリウムの製造方法 Expired - Fee Related JP4470682B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004298564A JP4470682B2 (ja) 2004-10-13 2004-10-13 トリメチルガリウムの製造方法
GB0520663A GB2420118B (en) 2004-10-13 2005-10-11 A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
US11/246,550 US20060075959A1 (en) 2004-10-13 2005-10-11 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
DE102005048680A DE102005048680A1 (de) 2004-10-13 2005-10-11 Trimethylgallium, Verfahren zur Herstellung desselben und aus dem Trimethylgallium gezüchteter Galliumnitriddünnfilm
KR1020050096398A KR101250153B1 (ko) 2004-10-13 2005-10-13 트리메틸갈륨, 이의 제조 방법 및 트리메틸갈륨으로부터형성된 질화갈륨 박막
TW094135671A TWI363059B (en) 2004-10-13 2005-10-13 A method for producing trimethylgallium
CN2005101083835A CN1763049B (zh) 2004-10-13 2005-10-13 三甲基镓的制造方法以及氮化镓薄膜的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004298564A JP4470682B2 (ja) 2004-10-13 2004-10-13 トリメチルガリウムの製造方法

Publications (3)

Publication Number Publication Date
JP2006111546A JP2006111546A (ja) 2006-04-27
JP2006111546A5 JP2006111546A5 (enExample) 2006-07-27
JP4470682B2 true JP4470682B2 (ja) 2010-06-02

Family

ID=35430195

Family Applications (1)

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JP2004298564A Expired - Fee Related JP4470682B2 (ja) 2004-10-13 2004-10-13 トリメチルガリウムの製造方法

Country Status (7)

Country Link
US (1) US20060075959A1 (enExample)
JP (1) JP4470682B2 (enExample)
KR (1) KR101250153B1 (enExample)
CN (1) CN1763049B (enExample)
DE (1) DE102005048680A1 (enExample)
GB (1) GB2420118B (enExample)
TW (1) TWI363059B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008024617A (ja) 2006-07-19 2008-02-07 Ube Ind Ltd 高純度トリアルキルアルミニウム及びその製法
JP4462251B2 (ja) * 2006-08-17 2010-05-12 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
JP2008050268A (ja) * 2006-08-22 2008-03-06 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008081451A (ja) * 2006-09-28 2008-04-10 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP2008263023A (ja) * 2007-04-11 2008-10-30 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法
JP2008266196A (ja) * 2007-04-19 2008-11-06 Nippon Shokubai Co Ltd ボラジン化合物の製造方法
JP2009126835A (ja) * 2007-11-27 2009-06-11 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
KR100965270B1 (ko) * 2008-07-04 2010-06-22 주식회사 한솔케미칼 새로운 전자 주개 리간드를 가지는 갈륨 착화합물 및 이의제조방법
JP5423039B2 (ja) * 2009-02-23 2014-02-19 宇部興産株式会社 高純度トリアルキルガリウム及びその製造方法
JP5348186B2 (ja) * 2011-06-16 2013-11-20 宇部興産株式会社 高純度トリアルキルガリウム及びその製法
DE102012013941A1 (de) 2012-07-16 2014-01-16 Umicore Ag & Co. Kg Verfahren zur Herstellung von Galliumtrialkylverbindungen
TWI632149B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iii a族金屬的三烷基化合物之製法
KR101326554B1 (ko) * 2012-06-22 2013-11-07 한국기초과학지원연구원 트리메틸갈륨(ＴＭＧａ)의 재활용 방법
KR101436590B1 (ko) * 2013-05-28 2014-09-02 한국기초과학지원연구원 회수 ＴＭＩｎ 재이용방법
JP5761401B2 (ja) * 2014-02-27 2015-08-12 宇部興産株式会社 高純度トリアルキルガリウム及びその製法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132888A (ja) * 1985-12-03 1987-06-16 Sumitomo Chem Co Ltd 有機金属化合物の精製方法
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
TW217415B (enExample) * 1991-11-19 1993-12-11 Shell Internat Res Schappej B V
US5455364A (en) * 1993-12-14 1995-10-03 Sumitomo Chemical Company, Ltd. Process for removing an impurity in organometallic compound
JP3230029B2 (ja) * 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
JP2927685B2 (ja) * 1994-08-19 1999-07-28 信越化学工業株式会社 有機金属化合物の精製方法
MY112590A (en) * 1994-09-02 2001-07-31 Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom Semi-conductor devices and their production
GB2344822A (en) * 1998-12-19 2000-06-21 Epichem Ltd Organometallic compound production using distillation
WO2000071551A2 (en) * 1999-05-21 2000-11-30 Akzo Nobel N.V. Purification of an organometallic compound by recrystallization
TW574762B (en) * 2002-10-16 2004-02-01 Univ Nat Cheng Kung Method for growing monocrystal GaN on silicon substrate
JP4488186B2 (ja) * 2004-06-18 2010-06-23 信越化学工業株式会社 トリメチルアルミニウムの精製方法
JP2006001896A (ja) * 2004-06-18 2006-01-05 Shin Etsu Chem Co Ltd 高純度トリメチルアルミニウム及びトリメチルアルミニウムの精製方法

Also Published As

Publication number Publication date
GB0520663D0 (en) 2005-11-16
US20060075959A1 (en) 2006-04-13
DE102005048680A1 (de) 2006-04-20
TWI363059B (en) 2012-05-01
TW200611908A (en) 2006-04-16
GB2420118B (en) 2006-12-13
CN1763049A (zh) 2006-04-26
KR101250153B1 (ko) 2013-04-04
KR20060053239A (ko) 2006-05-19
GB2420118A (en) 2006-05-17
CN1763049B (zh) 2011-12-14
JP2006111546A (ja) 2006-04-27

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