TWI363059B - A method for producing trimethylgallium - Google Patents
A method for producing trimethylgallium Download PDFInfo
- Publication number
- TWI363059B TWI363059B TW094135671A TW94135671A TWI363059B TW I363059 B TWI363059 B TW I363059B TW 094135671 A TW094135671 A TW 094135671A TW 94135671 A TW94135671 A TW 94135671A TW I363059 B TWI363059 B TW I363059B
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- Prior art keywords
- tma
- ppm
- compound
- content
- trimethyl
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 41
- 238000004821 distillation Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 9
- 238000010025 steaming Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000011002 quantification Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- QDKSGHXRHXVMPF-UHFFFAOYSA-N 2,2-dimethylundecane Chemical compound CCCCCCCCCC(C)(C)C QDKSGHXRHXVMPF-UHFFFAOYSA-N 0.000 claims 1
- 241000282320 Panthera leo Species 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000007812 deficiency Effects 0.000 claims 1
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 claims 1
- 238000000066 reactive distillation Methods 0.000 claims 1
- 241000894007 species Species 0.000 claims 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 150000003648 triterpenes Chemical class 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 30
- 239000000243 solution Substances 0.000 description 24
- 238000002454 metastable transfer emission spectrometry Methods 0.000 description 22
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 21
- 239000002904 solvent Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 17
- 238000009835 boiling Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 230000007062 hydrolysis Effects 0.000 description 16
- 238000006460 hydrolysis reaction Methods 0.000 description 16
- 150000001785 cerium compounds Chemical class 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 238000012937 correction Methods 0.000 description 12
- -1 gallium nitride compound Chemical class 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 150000002902 organometallic compounds Chemical class 0.000 description 10
- 150000003304 ruthenium compounds Chemical class 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- 239000012074 organic phase Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000008096 xylene Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 5
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical compound C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 150000002291 germanium compounds Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- BJXSTHWLDODKLM-UHFFFAOYSA-N 3-ethyl-3-methyldodecane Chemical compound CCCCCCCCCC(C)(CC)CC BJXSTHWLDODKLM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001622 bismuth compounds Chemical class 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001577 simple distillation Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- YGRHYJIWZFEDBT-UHFFFAOYSA-N tridecylaluminum Chemical compound CCCCCCCCCCCCC[Al] YGRHYJIWZFEDBT-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QDLFVXRWLQSBTF-UHFFFAOYSA-N 1,1,2-triethylhydrazine Chemical compound CCNN(CC)CC QDLFVXRWLQSBTF-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019918 CrB2 Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 101100063504 Mus musculus Dlx2 gene Proteins 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 238000000998 batch distillation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- QQEWMMRFXYVLQU-UHFFFAOYSA-N decylhydrazine Chemical compound CCCCCCCCCCNN QQEWMMRFXYVLQU-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- IGOGAEYHSPSTHS-UHFFFAOYSA-N dimethylgallium Chemical compound C[Ga]C IGOGAEYHSPSTHS-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000000567 diterpene group Chemical group 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- NRZWQKGABZFFKE-UHFFFAOYSA-N trimethylsulfonium Chemical compound C[S+](C)C NRZWQKGABZFFKE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004298564A JP4470682B2 (ja) | 2004-10-13 | 2004-10-13 | トリメチルガリウムの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200611908A TW200611908A (en) | 2006-04-16 |
| TWI363059B true TWI363059B (en) | 2012-05-01 |
Family
ID=35430195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094135671A TWI363059B (en) | 2004-10-13 | 2005-10-13 | A method for producing trimethylgallium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060075959A1 (enExample) |
| JP (1) | JP4470682B2 (enExample) |
| KR (1) | KR101250153B1 (enExample) |
| CN (1) | CN1763049B (enExample) |
| DE (1) | DE102005048680A1 (enExample) |
| GB (1) | GB2420118B (enExample) |
| TW (1) | TWI363059B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008024617A (ja) | 2006-07-19 | 2008-02-07 | Ube Ind Ltd | 高純度トリアルキルアルミニウム及びその製法 |
| JP4462251B2 (ja) * | 2006-08-17 | 2010-05-12 | 日立電線株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子 |
| JP2008050268A (ja) * | 2006-08-22 | 2008-03-06 | Ube Ind Ltd | 高純度トリアルキルガリウム及びその製法 |
| JP2008081451A (ja) * | 2006-09-28 | 2008-04-10 | Ube Ind Ltd | 高純度トリアルキルガリウム及びその製法 |
| JP2008263023A (ja) * | 2007-04-11 | 2008-10-30 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法 |
| JP2008266196A (ja) * | 2007-04-19 | 2008-11-06 | Nippon Shokubai Co Ltd | ボラジン化合物の製造方法 |
| JP2009126835A (ja) * | 2007-11-27 | 2009-06-11 | Ube Ind Ltd | 高純度トリアルキルガリウム及びその製法 |
| KR100965270B1 (ko) * | 2008-07-04 | 2010-06-22 | 주식회사 한솔케미칼 | 새로운 전자 주개 리간드를 가지는 갈륨 착화합물 및 이의제조방법 |
| JP5423039B2 (ja) * | 2009-02-23 | 2014-02-19 | 宇部興産株式会社 | 高純度トリアルキルガリウム及びその製造方法 |
| JP5348186B2 (ja) * | 2011-06-16 | 2013-11-20 | 宇部興産株式会社 | 高純度トリアルキルガリウム及びその製法 |
| DE102012013941A1 (de) | 2012-07-16 | 2014-01-16 | Umicore Ag & Co. Kg | Verfahren zur Herstellung von Galliumtrialkylverbindungen |
| TWI632149B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iii a族金屬的三烷基化合物之製法 |
| KR101326554B1 (ko) * | 2012-06-22 | 2013-11-07 | 한국기초과학지원연구원 | 트리메틸갈륨(ＴＭＧａ)의 재활용 방법 |
| KR101436590B1 (ko) * | 2013-05-28 | 2014-09-02 | 한국기초과학지원연구원 | 회수 ＴＭＩｎ 재이용방법 |
| JP5761401B2 (ja) * | 2014-02-27 | 2015-08-12 | 宇部興産株式会社 | 高純度トリアルキルガリウム及びその製法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132888A (ja) * | 1985-12-03 | 1987-06-16 | Sumitomo Chem Co Ltd | 有機金属化合物の精製方法 |
| US4847399A (en) * | 1987-01-23 | 1989-07-11 | Morton Thiokol, Inc. | Process for preparing or purifying Group III-A organometallic compounds |
| US5043462A (en) * | 1989-04-28 | 1991-08-27 | Messer Greisheim | Process for the production of gallium-alkyl compounds |
| TW217415B (enExample) * | 1991-11-19 | 1993-12-11 | Shell Internat Res Schappej B V | |
| US5455364A (en) * | 1993-12-14 | 1995-10-03 | Sumitomo Chemical Company, Ltd. | Process for removing an impurity in organometallic compound |
| JP3230029B2 (ja) * | 1994-05-30 | 2001-11-19 | 富士通株式会社 | Ｉｉｉ−ｖ族化合物半導体結晶成長方法 |
| JP2927685B2 (ja) * | 1994-08-19 | 1999-07-28 | 信越化学工業株式会社 | 有機金属化合物の精製方法 |
| MY112590A (en) * | 1994-09-02 | 2001-07-31 | Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom | Semi-conductor devices and their production |
| GB2344822A (en) * | 1998-12-19 | 2000-06-21 | Epichem Ltd | Organometallic compound production using distillation |
| WO2000071551A2 (en) * | 1999-05-21 | 2000-11-30 | Akzo Nobel N.V. | Purification of an organometallic compound by recrystallization |
| TW574762B (en) * | 2002-10-16 | 2004-02-01 | Univ Nat Cheng Kung | Method for growing monocrystal GaN on silicon substrate |
| JP4488186B2 (ja) * | 2004-06-18 | 2010-06-23 | 信越化学工業株式会社 | トリメチルアルミニウムの精製方法 |
| JP2006001896A (ja) * | 2004-06-18 | 2006-01-05 | Shin Etsu Chem Co Ltd | 高純度トリメチルアルミニウム及びトリメチルアルミニウムの精製方法 |
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2004
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2005
- 2005-10-11 DE DE102005048680A patent/DE102005048680A1/de not_active Withdrawn
- 2005-10-11 GB GB0520663A patent/GB2420118B/en not_active Expired - Fee Related
- 2005-10-11 US US11/246,550 patent/US20060075959A1/en not_active Abandoned
- 2005-10-13 TW TW094135671A patent/TWI363059B/zh not_active IP Right Cessation
- 2005-10-13 KR KR1020050096398A patent/KR101250153B1/ko not_active Expired - Fee Related
- 2005-10-13 CN CN2005101083835A patent/CN1763049B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB0520663D0 (en) | 2005-11-16 |
| US20060075959A1 (en) | 2006-04-13 |
| DE102005048680A1 (de) | 2006-04-20 |
| TW200611908A (en) | 2006-04-16 |
| GB2420118B (en) | 2006-12-13 |
| CN1763049A (zh) | 2006-04-26 |
| KR101250153B1 (ko) | 2013-04-04 |
| KR20060053239A (ko) | 2006-05-19 |
| GB2420118A (en) | 2006-05-17 |
| CN1763049B (zh) | 2011-12-14 |
| JP2006111546A (ja) | 2006-04-27 |
| JP4470682B2 (ja) | 2010-06-02 |
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