KR101161917B1 - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
KR101161917B1
KR101161917B1 KR1020040061869A KR20040061869A KR101161917B1 KR 101161917 B1 KR101161917 B1 KR 101161917B1 KR 1020040061869 A KR1020040061869 A KR 1020040061869A KR 20040061869 A KR20040061869 A KR 20040061869A KR 101161917 B1 KR101161917 B1 KR 101161917B1
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substrate
gan
light emitting
layer
semiconductor
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KR20050016184A (ko
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아키다카츠시
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스미토모덴키고교가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

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KR1020040061869A 2003-08-08 2004-08-06 반도체 발광소자 및 그 제조방법 Expired - Fee Related KR101161917B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003290308 2003-08-08
JPJP-P-2003-00290308 2003-08-08
JPJP-P-2004-00171301 2004-06-09
JP2004171301A JP4218597B2 (ja) 2003-08-08 2004-06-09 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
KR20050016184A KR20050016184A (ko) 2005-02-21
KR101161917B1 true KR101161917B1 (ko) 2012-07-18

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Country Status (6)

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US (2) US7368310B2 (enExample)
EP (1) EP1505661A3 (enExample)
JP (1) JP4218597B2 (enExample)
KR (1) KR101161917B1 (enExample)
CN (1) CN100461468C (enExample)
TW (1) TW200507307A (enExample)

Cited By (2)

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WO2014017837A3 (en) * 2012-07-25 2014-03-13 Seoul Viosys Co., Ltd. Method of fabricating gallium nitride-based semiconductor
WO2014042438A1 (en) * 2012-09-13 2014-03-20 Seoul Viosys Co., Ltd. Method of fabricating gallium nitride based semiconductor device

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US8802465B2 (en) 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2006202845A (ja) * 2005-01-18 2006-08-03 Sony Corp 半導体発光装置
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
KR101166922B1 (ko) * 2005-05-27 2012-07-19 엘지이노텍 주식회사 발광 다이오드의 제조 방법
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
WO2007023911A1 (ja) * 2005-08-25 2007-03-01 Tohoku Techno Arch Co., Ltd. 半導体基板製造方法
JP2007116110A (ja) * 2005-09-22 2007-05-10 Sanyo Electric Co Ltd 窒化物系半導体素子の製造方法
CN101882656B (zh) * 2005-10-29 2014-03-12 三星显示有限公司 半导体器件及其制造方法
JP2007134388A (ja) * 2005-11-08 2007-05-31 Sharp Corp 窒化物系半導体素子とその製造方法
JP2007221051A (ja) * 2006-02-20 2007-08-30 Sanyo Electric Co Ltd 窒化物系半導体素子の製造方法
WO2007097242A1 (ja) * 2006-02-24 2007-08-30 Matsushita Electric Industrial Co., Ltd. 発光素子
US7696523B2 (en) * 2006-03-14 2010-04-13 Lg Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8476158B2 (en) 2006-06-14 2013-07-02 Sumitomo Electric Industries, Ltd. Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture
JP4714087B2 (ja) * 2006-06-14 2011-06-29 住友電気工業株式会社 ＧａＮ基板の保存方法、および半導体デバイスの製造方法
KR100818451B1 (ko) * 2006-07-03 2008-04-01 삼성전기주식회사 편광성을 갖는 반도체 발광 소자
JP2008294213A (ja) * 2007-05-24 2008-12-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2008294379A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体素子の製造方法
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
CN101330117B (zh) * 2007-06-18 2012-04-18 周明奇 以氧化锌制作发光装置的方法
JP4937025B2 (ja) * 2007-07-20 2012-05-23 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2009141093A (ja) * 2007-12-06 2009-06-25 Toshiba Corp 発光素子及び発光素子の製造方法
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
JP5712471B2 (ja) * 2009-08-03 2015-05-07 富士通株式会社 化合物半導体装置の製造方法
EP2330697A1 (en) * 2009-12-07 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Semiconductor device having an InGaN layer
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
JP5678092B2 (ja) * 2009-12-15 2015-02-25 ソイテック 基板を再利用する方法
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
KR100969131B1 (ko) * 2010-03-05 2010-07-07 엘지이노텍 주식회사 발광 소자 제조방법
KR101039988B1 (ko) * 2010-03-09 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101160158B1 (ko) * 2010-05-28 2012-06-27 주식회사 엘티에스 레이저 리프트 오프 공정의 기판 분리장치
TW201225361A (en) * 2010-11-09 2012-06-16 Semileds Optoelectronics Co Light-emitting diode lamp with low thermal resistance
KR101684859B1 (ko) * 2011-01-05 2016-12-09 삼성전자주식회사 발광 다이오드 제조방법 및 이에 의하여 제조된 발광 다이오드
KR101717670B1 (ko) * 2011-06-15 2017-03-17 삼성전자주식회사 반도체 발광소자 제조방법
JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2013128150A (ja) * 2013-03-26 2013-06-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子の製造方法
FR3009644B1 (fr) * 2013-08-08 2016-12-23 Soitec Silicon On Insulator Procede, empilement et ensemble de separation d'une structure d'un substrat par irradiations electromagnetiques
KR102288238B1 (ko) 2013-09-03 2021-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP2015153826A (ja) * 2014-02-12 2015-08-24 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법
JP7553915B2 (ja) * 2020-04-15 2024-09-19 国立大学法人東海国立大学機構 窒化ガリウム半導体装置の製造方法
JP7639390B2 (ja) * 2021-02-23 2025-03-05 株式会社デンソー 半導体チップの製造方法
KR102615809B1 (ko) * 2022-07-22 2023-12-20 웨이브로드 주식회사 전력반도체 소자용 그룹3족 질화물 반도체 템플릿

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JPH1168157A (ja) * 1997-08-19 1999-03-09 Sumitomo Electric Ind Ltd 半導体発光素子及びその製造方法
JP2001077423A (ja) * 1999-09-01 2001-03-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014017837A3 (en) * 2012-07-25 2014-03-13 Seoul Viosys Co., Ltd. Method of fabricating gallium nitride-based semiconductor
WO2014042438A1 (en) * 2012-09-13 2014-03-20 Seoul Viosys Co., Ltd. Method of fabricating gallium nitride based semiconductor device
US9159870B2 (en) 2012-09-13 2015-10-13 Seoul Viosys Co., Ltd. Method of fabricating gallium nitride based semiconductor device

Also Published As

Publication number Publication date
EP1505661A2 (en) 2005-02-09
US7550776B2 (en) 2009-06-23
TW200507307A (en) 2005-02-16
TWI345315B (enExample) 2011-07-11
KR20050016184A (ko) 2005-02-21
CN1581525A (zh) 2005-02-16
US20050040425A1 (en) 2005-02-24
CN100461468C (zh) 2009-02-11
US7368310B2 (en) 2008-05-06
JP2005093988A (ja) 2005-04-07
JP4218597B2 (ja) 2009-02-04
US20080149954A1 (en) 2008-06-26
EP1505661A3 (en) 2009-01-07

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