TW200507307A - Semiconductor light emitting device and the manufacturing method thereof - Google Patents

Semiconductor light emitting device and the manufacturing method thereof

Info

Publication number
TW200507307A
TW200507307A TW093123724A TW93123724A TW200507307A TW 200507307 A TW200507307 A TW 200507307A TW 093123724 A TW093123724 A TW 093123724A TW 93123724 A TW93123724 A TW 93123724A TW 200507307 A TW200507307 A TW 200507307A
Authority
TW
Taiwan
Prior art keywords
light emitting
manufacturing
algan
emitting device
semiconductor light
Prior art date
Application number
TW093123724A
Other languages
English (en)
Chinese (zh)
Other versions
TWI345315B (enExample
Inventor
Katsushi Akita
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200507307A publication Critical patent/TW200507307A/zh
Application granted granted Critical
Publication of TWI345315B publication Critical patent/TWI345315B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Led Devices (AREA)
TW093123724A 2003-08-08 2004-08-06 Semiconductor light emitting device and the manufacturing method thereof TW200507307A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003290308 2003-08-08
JP2004171301A JP4218597B2 (ja) 2003-08-08 2004-06-09 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
TW200507307A true TW200507307A (en) 2005-02-16
TWI345315B TWI345315B (enExample) 2011-07-11

Family

ID=33554539

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123724A TW200507307A (en) 2003-08-08 2004-08-06 Semiconductor light emitting device and the manufacturing method thereof

Country Status (6)

Country Link
US (2) US7368310B2 (enExample)
EP (1) EP1505661A3 (enExample)
JP (1) JP4218597B2 (enExample)
KR (1) KR101161917B1 (enExample)
CN (1) CN100461468C (enExample)
TW (1) TW200507307A (enExample)

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KR101717670B1 (ko) * 2011-06-15 2017-03-17 삼성전자주식회사 반도체 발광소자 제조방법
KR20140014625A (ko) * 2012-07-25 2014-02-06 서울바이오시스 주식회사 질화갈륨계 반도체 소자를 제조하는 방법
KR101923673B1 (ko) 2012-09-13 2018-11-29 서울바이오시스 주식회사 질화갈륨계 반도체 소자를 제조하는 방법
JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2013128150A (ja) * 2013-03-26 2013-06-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子の製造方法
FR3009644B1 (fr) * 2013-08-08 2016-12-23 Soitec Silicon On Insulator Procede, empilement et ensemble de separation d'une structure d'un substrat par irradiations electromagnetiques
KR102288238B1 (ko) 2013-09-03 2021-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP2015153826A (ja) * 2014-02-12 2015-08-24 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법
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Also Published As

Publication number Publication date
EP1505661A2 (en) 2005-02-09
US7550776B2 (en) 2009-06-23
TWI345315B (enExample) 2011-07-11
KR20050016184A (ko) 2005-02-21
CN1581525A (zh) 2005-02-16
US20050040425A1 (en) 2005-02-24
KR101161917B1 (ko) 2012-07-18
CN100461468C (zh) 2009-02-11
US7368310B2 (en) 2008-05-06
JP2005093988A (ja) 2005-04-07
JP4218597B2 (ja) 2009-02-04
US20080149954A1 (en) 2008-06-26
EP1505661A3 (en) 2009-01-07

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