WO2009066911A3 - Gan-based light emitting diode having omnidirectional reflector with 3-dimensional structure and method for fabricating the same - Google Patents

Gan-based light emitting diode having omnidirectional reflector with 3-dimensional structure and method for fabricating the same Download PDF

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Publication number
WO2009066911A3
WO2009066911A3 PCT/KR2008/006760 KR2008006760W WO2009066911A3 WO 2009066911 A3 WO2009066911 A3 WO 2009066911A3 KR 2008006760 W KR2008006760 W KR 2008006760W WO 2009066911 A3 WO2009066911 A3 WO 2009066911A3
Authority
WO
WIPO (PCT)
Prior art keywords
gan
reflector
emitting diode
omnidirectional reflector
same
Prior art date
Application number
PCT/KR2008/006760
Other languages
French (fr)
Other versions
WO2009066911A2 (en
Inventor
Moon-Deock Kim
Original Assignee
Wooree Lst Co Ltd
Moon-Deock Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wooree Lst Co Ltd, Moon-Deock Kim filed Critical Wooree Lst Co Ltd
Publication of WO2009066911A2 publication Critical patent/WO2009066911A2/en
Publication of WO2009066911A3 publication Critical patent/WO2009066911A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)

Abstract

Provided are a gallium nitride (GaN)-based light-emitting diode (LED) having an omnidi¬ rectional reflector with a 3-dimensional (3D) structure and a method of manufacturing the same, capable of increasing light extraction efficiency of the LED by forming an omnidirectional reflector without requiring a patterning process such as etching or a regrowth process. The GaN- based LED having an omnidirectional reflector with a 3D structure includes a substrate; an om¬ nidirectional reflector which is formed on the substrate and has a 3D structure including quantum dots; and a GaN-based semiconductor layer formed on the substrate including the omnidirectional reflector.
PCT/KR2008/006760 2007-11-21 2008-11-17 Gan-based light emitting diode having omnidirectional reflector with 3-dimensional structure and method for fabricating the same WO2009066911A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0119353 2007-11-21
KR20070119353A KR100990226B1 (en) 2007-11-21 2007-11-21 GaN-based Light Emitting Diode having omnidirectional reflector with 3-dimensional structure and method for fabricating the same

Publications (2)

Publication Number Publication Date
WO2009066911A2 WO2009066911A2 (en) 2009-05-28
WO2009066911A3 true WO2009066911A3 (en) 2009-08-13

Family

ID=40667973

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/006760 WO2009066911A2 (en) 2007-11-21 2008-11-17 Gan-based light emitting diode having omnidirectional reflector with 3-dimensional structure and method for fabricating the same

Country Status (2)

Country Link
KR (1) KR100990226B1 (en)
WO (1) WO2009066911A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046086B1 (en) * 2008-12-03 2011-07-01 삼성엘이디 주식회사 Semiconductor light emitting device and manufacturing method thereof
TWI408746B (en) * 2011-01-19 2013-09-11 Lextar Electronics Corp Method of fabricating patterned substrate
JP6158248B2 (en) 2014-05-27 2017-07-05 ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイＴｈｅ Ｂｏａｒｄ Ｏｆ Ｔｒｕｓｔｅｅｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｉｌｌｉｎｏｉｓ Nanostructured material methods and devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183905A (en) * 2003-12-20 2005-07-07 Samsung Electro Mech Co Ltd Method of manufacturing nitride semiconductor and nitride semiconductor utilizing the same
US6943366B2 (en) * 2003-03-31 2005-09-13 Ngk Insulators, Ltd. Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method
KR20060040923A (en) * 2004-11-08 2006-05-11 엘지전자 주식회사 Light emitting diode of high efficiency for light extraction and method for fabricating the same
US7294865B2 (en) * 2004-12-17 2007-11-13 Genesis Photonics Inc. Light emitting device and the use thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943366B2 (en) * 2003-03-31 2005-09-13 Ngk Insulators, Ltd. Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method
JP2005183905A (en) * 2003-12-20 2005-07-07 Samsung Electro Mech Co Ltd Method of manufacturing nitride semiconductor and nitride semiconductor utilizing the same
KR20060040923A (en) * 2004-11-08 2006-05-11 엘지전자 주식회사 Light emitting diode of high efficiency for light extraction and method for fabricating the same
US7294865B2 (en) * 2004-12-17 2007-11-13 Genesis Photonics Inc. Light emitting device and the use thereof

Also Published As

Publication number Publication date
KR100990226B1 (en) 2010-10-29
WO2009066911A2 (en) 2009-05-28
KR20090052721A (en) 2009-05-26

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