CN100461468C - 发光半导体器件及其制造方法 - Google Patents

发光半导体器件及其制造方法 Download PDF

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Publication number
CN100461468C
CN100461468C CNB2004100563402A CN200410056340A CN100461468C CN 100461468 C CN100461468 C CN 100461468C CN B2004100563402 A CNB2004100563402 A CN B2004100563402A CN 200410056340 A CN200410056340 A CN 200410056340A CN 100461468 C CN100461468 C CN 100461468C
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China
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gan
substrate
light
algan
layer
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Expired - Fee Related
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CNB2004100563402A
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English (en)
Chinese (zh)
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CN1581525A (zh
Inventor
秋田胜史
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

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CNB2004100563402A 2003-08-08 2004-08-06 发光半导体器件及其制造方法 Expired - Fee Related CN100461468C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003290308 2003-08-08
JP2003290308 2003-08-08
JP2004171301A JP4218597B2 (ja) 2003-08-08 2004-06-09 半導体発光素子の製造方法
JP2004171301 2004-06-09

Publications (2)

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CN1581525A CN1581525A (zh) 2005-02-16
CN100461468C true CN100461468C (zh) 2009-02-11

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CNB2004100563402A Expired - Fee Related CN100461468C (zh) 2003-08-08 2004-08-06 发光半导体器件及其制造方法

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US (2) US7368310B2 (enExample)
EP (1) EP1505661A3 (enExample)
JP (1) JP4218597B2 (enExample)
KR (1) KR101161917B1 (enExample)
CN (1) CN100461468C (enExample)
TW (1) TW200507307A (enExample)

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US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8476158B2 (en) 2006-06-14 2013-07-02 Sumitomo Electric Industries, Ltd. Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture
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JP2008294213A (ja) * 2007-05-24 2008-12-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2008294379A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体素子の製造方法
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CN101330117B (zh) * 2007-06-18 2012-04-18 周明奇 以氧化锌制作发光装置的方法
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JP2009141093A (ja) * 2007-12-06 2009-06-25 Toshiba Corp 発光素子及び発光素子の製造方法
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FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
JP5712471B2 (ja) * 2009-08-03 2015-05-07 富士通株式会社 化合物半導体装置の製造方法
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US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
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KR100969131B1 (ko) * 2010-03-05 2010-07-07 엘지이노텍 주식회사 발광 소자 제조방법
KR101039988B1 (ko) * 2010-03-09 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101160158B1 (ko) * 2010-05-28 2012-06-27 주식회사 엘티에스 레이저 리프트 오프 공정의 기판 분리장치
TW201225361A (en) * 2010-11-09 2012-06-16 Semileds Optoelectronics Co Light-emitting diode lamp with low thermal resistance
KR101684859B1 (ko) * 2011-01-05 2016-12-09 삼성전자주식회사 발광 다이오드 제조방법 및 이에 의하여 제조된 발광 다이오드
KR101717670B1 (ko) * 2011-06-15 2017-03-17 삼성전자주식회사 반도체 발광소자 제조방법
KR20140014625A (ko) * 2012-07-25 2014-02-06 서울바이오시스 주식회사 질화갈륨계 반도체 소자를 제조하는 방법
KR101923673B1 (ko) 2012-09-13 2018-11-29 서울바이오시스 주식회사 질화갈륨계 반도체 소자를 제조하는 방법
JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2013128150A (ja) * 2013-03-26 2013-06-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子の製造方法
FR3009644B1 (fr) * 2013-08-08 2016-12-23 Soitec Silicon On Insulator Procede, empilement et ensemble de separation d'une structure d'un substrat par irradiations electromagnetiques
KR102288238B1 (ko) 2013-09-03 2021-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP2015153826A (ja) * 2014-02-12 2015-08-24 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법
JP7553915B2 (ja) * 2020-04-15 2024-09-19 国立大学法人東海国立大学機構 窒化ガリウム半導体装置の製造方法
JP7639390B2 (ja) * 2021-02-23 2025-03-05 株式会社デンソー 半導体チップの製造方法
KR102615809B1 (ko) * 2022-07-22 2023-12-20 웨이브로드 주식회사 전력반도체 소자용 그룹3족 질화물 반도체 템플릿

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Also Published As

Publication number Publication date
EP1505661A2 (en) 2005-02-09
US7550776B2 (en) 2009-06-23
TW200507307A (en) 2005-02-16
TWI345315B (enExample) 2011-07-11
KR20050016184A (ko) 2005-02-21
CN1581525A (zh) 2005-02-16
US20050040425A1 (en) 2005-02-24
KR101161917B1 (ko) 2012-07-18
US7368310B2 (en) 2008-05-06
JP2005093988A (ja) 2005-04-07
JP4218597B2 (ja) 2009-02-04
US20080149954A1 (en) 2008-06-26
EP1505661A3 (en) 2009-01-07

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