KR101129597B1 - 반도체장치 및 표시장치 - Google Patents

반도체장치 및 표시장치 Download PDF

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Publication number
KR101129597B1
KR101129597B1 KR1020040086469A KR20040086469A KR101129597B1 KR 101129597 B1 KR101129597 B1 KR 101129597B1 KR 1020040086469 A KR1020040086469 A KR 1020040086469A KR 20040086469 A KR20040086469 A KR 20040086469A KR 101129597 B1 KR101129597 B1 KR 101129597B1
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South Korea
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delete delete
gate circuit
circuit
film
input side
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Expired - Fee Related
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KR1020040086469A
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English (en)
Korean (ko)
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KR20050041913A (ko
Inventor
쿠로카와요시유키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020040086469A 2003-10-31 2004-10-28 반도체장치 및 표시장치 Expired - Fee Related KR101129597B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003373775A JP4683833B2 (ja) 2003-10-31 2003-10-31 機能回路及びその設計方法
JPJP-P-2003-00373775 2003-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110122105A Division KR101440805B1 (ko) 2003-10-31 2011-11-22 반도체 장치 및 표시 장치

Publications (2)

Publication Number Publication Date
KR20050041913A KR20050041913A (ko) 2005-05-04
KR101129597B1 true KR101129597B1 (ko) 2012-03-27

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020040086469A Expired - Fee Related KR101129597B1 (ko) 2003-10-31 2004-10-28 반도체장치 및 표시장치
KR1020110122105A Expired - Fee Related KR101440805B1 (ko) 2003-10-31 2011-11-22 반도체 장치 및 표시 장치
KR1020130064011A Expired - Fee Related KR101401517B1 (ko) 2003-10-31 2013-06-04 반도체 장치

Family Applications After (2)

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KR1020110122105A Expired - Fee Related KR101440805B1 (ko) 2003-10-31 2011-11-22 반도체 장치 및 표시 장치
KR1020130064011A Expired - Fee Related KR101401517B1 (ko) 2003-10-31 2013-06-04 반도체 장치

Country Status (4)

Country Link
US (5) US7456660B2 (https=)
JP (1) JP4683833B2 (https=)
KR (3) KR101129597B1 (https=)
CN (1) CN100483713C (https=)

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CN107330200B (zh) * 2017-07-03 2020-12-08 京东方科技集团股份有限公司 薄膜晶体管的耐受静电电压的确定方法及设备
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Publication number Publication date
US8704551B2 (en) 2014-04-22
US20100327911A1 (en) 2010-12-30
US20140225647A1 (en) 2014-08-14
KR20050041913A (ko) 2005-05-04
KR101401517B1 (ko) 2014-06-03
KR20110132541A (ko) 2011-12-08
US7456660B2 (en) 2008-11-25
JP4683833B2 (ja) 2011-05-18
CN100483713C (zh) 2009-04-29
US7791373B2 (en) 2010-09-07
JP2005136359A (ja) 2005-05-26
CN1612345A (zh) 2005-05-04
US20090072862A1 (en) 2009-03-19
KR20130069703A (ko) 2013-06-26
US20050138507A1 (en) 2005-06-23
US9166600B2 (en) 2015-10-20
KR101440805B1 (ko) 2014-09-23
US20120229166A1 (en) 2012-09-13
US8143919B2 (en) 2012-03-27

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