CN100483713C - 半导体器件和显示器件 - Google Patents

半导体器件和显示器件 Download PDF

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Publication number
CN100483713C
CN100483713C CNB2004100898266A CN200410089826A CN100483713C CN 100483713 C CN100483713 C CN 100483713C CN B2004100898266 A CNB2004100898266 A CN B2004100898266A CN 200410089826 A CN200410089826 A CN 200410089826A CN 100483713 C CN100483713 C CN 100483713C
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CN
China
Prior art keywords
circuit
logic circuit
gate
gate circuit
side logic
Prior art date
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Expired - Fee Related
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CNB2004100898266A
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English (en)
Chinese (zh)
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CN1612345A (zh
Inventor
黑川义元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1612345A publication Critical patent/CN1612345A/zh
Application granted granted Critical
Publication of CN100483713C publication Critical patent/CN100483713C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB2004100898266A 2003-10-31 2004-11-01 半导体器件和显示器件 Expired - Fee Related CN100483713C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP373775/2003 2003-10-31
JP2003373775A JP4683833B2 (ja) 2003-10-31 2003-10-31 機能回路及びその設計方法
JP373775/03 2003-10-31

Publications (2)

Publication Number Publication Date
CN1612345A CN1612345A (zh) 2005-05-04
CN100483713C true CN100483713C (zh) 2009-04-29

Family

ID=34649693

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100898266A Expired - Fee Related CN100483713C (zh) 2003-10-31 2004-11-01 半导体器件和显示器件

Country Status (4)

Country Link
US (5) US7456660B2 (https=)
JP (1) JP4683833B2 (https=)
KR (3) KR101129597B1 (https=)
CN (1) CN100483713C (https=)

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CN107330200B (zh) * 2017-07-03 2020-12-08 京东方科技集团股份有限公司 薄膜晶体管的耐受静电电压的确定方法及设备
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CN108735163B (zh) * 2018-05-30 2020-11-17 京东方科技集团股份有限公司 用于阵列基板行驱动单元的或逻辑运算电路
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Also Published As

Publication number Publication date
US8704551B2 (en) 2014-04-22
US20100327911A1 (en) 2010-12-30
KR101129597B1 (ko) 2012-03-27
US20140225647A1 (en) 2014-08-14
KR20050041913A (ko) 2005-05-04
KR101401517B1 (ko) 2014-06-03
KR20110132541A (ko) 2011-12-08
US7456660B2 (en) 2008-11-25
JP4683833B2 (ja) 2011-05-18
US7791373B2 (en) 2010-09-07
JP2005136359A (ja) 2005-05-26
CN1612345A (zh) 2005-05-04
US20090072862A1 (en) 2009-03-19
KR20130069703A (ko) 2013-06-26
US20050138507A1 (en) 2005-06-23
US9166600B2 (en) 2015-10-20
KR101440805B1 (ko) 2014-09-23
US20120229166A1 (en) 2012-09-13
US8143919B2 (en) 2012-03-27

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Granted publication date: 20090429