KR101002945B1 - 반도체장치의 제조 방법 및 기판처리장치 - Google Patents

반도체장치의 제조 방법 및 기판처리장치 Download PDF

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Publication number
KR101002945B1
KR101002945B1 KR1020107010998A KR20107010998A KR101002945B1 KR 101002945 B1 KR101002945 B1 KR 101002945B1 KR 1020107010998 A KR1020107010998 A KR 1020107010998A KR 20107010998 A KR20107010998 A KR 20107010998A KR 101002945 B1 KR101002945 B1 KR 101002945B1
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South Korea
Prior art keywords
containing gas
processing chamber
hydrogen
oxygen
substrate
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Korean (ko)
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KR20100057101A (ko
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카즈히로 유아사
야스히로 메가와
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가부시키가이샤 히다치 고쿠사이 덴키
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Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107010998A 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치 Expired - Lifetime KR101002945B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2005-064475 2005-03-08
JP2005064475 2005-03-08

Related Parent Applications (1)

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KR1020107002352A Division KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

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KR20100057101A KR20100057101A (ko) 2010-05-28
KR101002945B1 true KR101002945B1 (ko) 2010-12-21

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KR1020107010998A Expired - Lifetime KR101002945B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020077019513A Expired - Fee Related KR100909697B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치
KR1020107002353A Expired - Lifetime KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Expired - Fee Related KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002352A Expired - Lifetime KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

Family Applications After (4)

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KR1020077019513A Expired - Fee Related KR100909697B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치
KR1020107002353A Expired - Lifetime KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Expired - Fee Related KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002352A Expired - Lifetime KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

Country Status (5)

Country Link
US (2) US7713883B2 (enExample)
JP (3) JP4672007B2 (enExample)
KR (5) KR101002945B1 (enExample)
TW (1) TW200705552A (enExample)
WO (1) WO2006095752A1 (enExample)

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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
TWI572043B (zh) * 2010-06-10 2017-02-21 應用材料股份有限公司 具增強的游離及ｒｆ功率耦合的低電阻率鎢ｐｖｄ
JP5686487B2 (ja) * 2011-06-03 2015-03-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6254098B2 (ja) * 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
JP6196106B2 (ja) * 2013-09-13 2017-09-13 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP6380063B2 (ja) * 2014-12-08 2018-08-29 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、気相成長装置
JP6573578B2 (ja) * 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6745887B2 (ja) * 2016-09-23 2020-08-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
SG11202102610UA (en) 2018-09-21 2021-04-29 Kokusai Electric Corp Method of manufacturing semiconductor device, substrate processing apparatus and program
JP7345245B2 (ja) * 2018-11-13 2023-09-15 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
WO2023099926A1 (en) * 2021-12-03 2023-06-08 Organic Electronic Technologies Private Company Printed transparent electrode using silver nanowires and metal oxide nanoparticles blend for fully printed electronic devices
KR102910999B1 (ko) * 2021-12-15 2026-01-13 주식회사 원익아이피에스 기판처리방법
US20230215737A1 (en) * 2021-12-31 2023-07-06 Texas Instruments Incorporated Method of annealing out silicon defectivity
JP7651533B2 (ja) * 2022-09-26 2025-03-26 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム

Citations (1)

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KR100310461B1 (ko) 1994-12-20 2001-12-15 박종섭 실리콘산화막의형성방법

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Publication number Publication date
KR20100028663A (ko) 2010-03-12
KR20100018110A (ko) 2010-02-16
KR100909697B1 (ko) 2009-07-29
US20080124943A1 (en) 2008-05-29
WO2006095752A1 (ja) 2006-09-14
JPWO2006095752A1 (ja) 2008-08-14
KR20100057101A (ko) 2010-05-28
KR100966086B1 (ko) 2010-06-28
TWI342585B (enExample) 2011-05-21
KR20090033923A (ko) 2009-04-06
TW200705552A (en) 2007-02-01
JP4672007B2 (ja) 2011-04-20
JP2011003915A (ja) 2011-01-06
KR100982996B1 (ko) 2010-09-17
KR100994649B1 (ko) 2010-11-16
KR20070098952A (ko) 2007-10-05
JP2011077534A (ja) 2011-04-14
US7713883B2 (en) 2010-05-11
JP5399996B2 (ja) 2014-01-29
JP5325363B2 (ja) 2013-10-23
US20100192855A1 (en) 2010-08-05

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