KR100971566B1 - 반도체 장치의 제조 방법 및 이 방법을 이용하여 형성된반도체 장치 - Google Patents

반도체 장치의 제조 방법 및 이 방법을 이용하여 형성된반도체 장치 Download PDF

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KR100971566B1
KR100971566B1 KR1020077005103A KR20077005103A KR100971566B1 KR 100971566 B1 KR100971566 B1 KR 100971566B1 KR 1020077005103 A KR1020077005103 A KR 1020077005103A KR 20077005103 A KR20077005103 A KR 20077005103A KR 100971566 B1 KR100971566 B1 KR 100971566B1
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South Korea
Prior art keywords
thin film
dielectric thin
semiconductor device
film
manufacturing
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KR1020077005103A
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English (en)
Korean (ko)
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KR20070052776A (ko
Inventor
요시아끼 오꾸
노부또시 후지이
가즈오 고무라
Original Assignee
로무 가부시키가이샤
가부시키가이샤 아루박
미쯔이가가꾸가부시끼가이샤
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Publication of KR20070052776A publication Critical patent/KR20070052776A/ko
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Publication of KR100971566B1 publication Critical patent/KR100971566B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020077005103A 2004-09-02 2005-09-01 반도체 장치의 제조 방법 및 이 방법을 이용하여 형성된반도체 장치 KR100971566B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004255463A JP4903374B2 (ja) 2004-09-02 2004-09-02 半導体装置の製造方法
JPJP-P-2004-00255463 2004-09-02

Publications (2)

Publication Number Publication Date
KR20070052776A KR20070052776A (ko) 2007-05-22
KR100971566B1 true KR100971566B1 (ko) 2010-07-20

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KR1020077005103A KR100971566B1 (ko) 2004-09-02 2005-09-01 반도체 장치의 제조 방법 및 이 방법을 이용하여 형성된반도체 장치

Country Status (6)

Country Link
US (2) US7727907B2 (fr)
JP (1) JP4903374B2 (fr)
KR (1) KR100971566B1 (fr)
CN (1) CN101015050B (fr)
TW (1) TWI359443B (fr)
WO (1) WO2006025501A1 (fr)

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JP4903373B2 (ja) * 2004-09-02 2012-03-28 ローム株式会社 半導体装置の製造方法
JP4903374B2 (ja) * 2004-09-02 2012-03-28 ローム株式会社 半導体装置の製造方法
JPWO2008029800A1 (ja) 2006-09-07 2010-01-21 東京エレクトロン株式会社 基板処理方法および記憶媒体
JP4578507B2 (ja) * 2007-07-02 2010-11-10 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP5090091B2 (ja) * 2007-07-12 2012-12-05 株式会社アルバック 表面処理装置及びこの表面処理装置を備えた半導体製造装置
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KR101293896B1 (ko) * 2008-12-03 2013-08-06 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
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KR101067091B1 (ko) * 2010-03-31 2011-09-22 삼성전기주식회사 방열기판 및 그 제조방법
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JP2012138609A (ja) * 2012-03-16 2012-07-19 Ulvac Japan Ltd 表面処理装置及びこの表面処理装置を備えた半導体製造装置
CN104412376B (zh) 2012-07-17 2017-02-08 三井化学株式会社 半导体装置及其制造方法及冲洗液
JP5535368B2 (ja) * 2013-04-26 2014-07-02 東京エレクトロン株式会社 処理装置
JP6419762B2 (ja) * 2016-09-06 2018-11-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
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WO2003028097A1 (fr) 2001-09-25 2003-04-03 Rohm Co., Ltd. Procede de production de dispositif semiconducteur
WO2004026765A1 (fr) 2002-09-09 2004-04-01 Mitsui Chemicals, Inc. Procede de modification d'un film poreux, film poreux modifie et utilisation de ce dernier

Also Published As

Publication number Publication date
WO2006025501A1 (fr) 2006-03-09
KR20070052776A (ko) 2007-05-22
US8212338B2 (en) 2012-07-03
CN101015050B (zh) 2010-10-06
US20100200990A1 (en) 2010-08-12
JP2006073800A (ja) 2006-03-16
TWI359443B (en) 2012-03-01
CN101015050A (zh) 2007-08-08
TW200614331A (en) 2006-05-01
US7727907B2 (en) 2010-06-01
US20070228568A1 (en) 2007-10-04
JP4903374B2 (ja) 2012-03-28

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