KR100937443B1 - 발광장치 및 이를 이용한 전자 기기 - Google Patents
발광장치 및 이를 이용한 전자 기기 Download PDFInfo
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- KR100937443B1 KR100937443B1 KR1020090049567A KR20090049567A KR100937443B1 KR 100937443 B1 KR100937443 B1 KR 100937443B1 KR 1020090049567 A KR1020090049567 A KR 1020090049567A KR 20090049567 A KR20090049567 A KR 20090049567A KR 100937443 B1 KR100937443 B1 KR 100937443B1
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Abstract
Description
Claims (16)
- 복수의 소스 신호선;복수의 전류 공급선;복수의 화소를 가지며, 상기 복수의 화소는:각각 발광 영역을 갖는 복수의 발광소자와,상기 복수의 발광소자 각각에 각기 대응하는 복수의 구동용 트랜지스터를 가지며,상기 복수의 소스 신호선, 상기 복수의 전류 공급선, 및 상기 복수의 구동용 트랜지스터는 상기 복수의 화소의 인접한 발광 영역을 이격시키는 위치에 형성된 절연막과 중첩되는 위치에 배치되어 있는, 발광장치.
- 복수의 소스 신호선;복수의 전류 공급선;복수의 화소를 가지며, 상기 복수의 화소는:각각 발광 영역을 갖는 복수의 발광소자와,상기 복수의 발광소자의 각각에 각기 대응하는 복수의 스위칭용 트랜지스터와,상기 복수의 발광소자의 각각에 각기 대응하는 복수의 소거용 트랜지스터와,상기 복수의 발광 소자의 각각에 각기 대응하는 복수의 구동용 트랜지스터를 가지며,상기 복수의 소스 신호선, 상기 복수의 전류 공급선, 및 상기 복수의 구동용 트랜지스터는 상기 복수의 화소의 인접한 발광 영역을 이격시키는 위치에 형성된 절연막과 중첩되는 위치에 배치되어 있는, 발광장치.
- 절연 표면 위에 채널 형성 영역, 소스영역, 드레인영역을 구비한 반도체층과, 상기 반도체층 위에 게이트 절연막과, 상기 게이트 절연막 위에 게이트 전극을 갖는 구동용 트랜지스터와,상기 게이트 전극과 상기 게이트 절연막 위에 층간 절연막과,상기 층간 절연막 위에 소스 신호선과,상기 층간 절연막 위에 전류 공급선과,상기 층간 절연막 위에 화소 전극과,상기 화소 전극 위에 발광층을 가지고,상기 구동용 트랜지스터는 상기 소스 신호선과 상기 전류 공급선 중의 적어도 하나와 중첩되는, 발광장치.
- 제 1 항 내지 제 3 항 중 어느 한 항에 따른 발광 장치를 이용하는 전자 기기에 있어서,일렉트로 루미네센스 표시장치, 디지탈 스틸카메라, 랩탑 컴퓨터, 모바일 컴퓨터, 기록매체를 구비한 휴대형 영상 재생장치, 고글형 표시장치, 비디오 카메라, 모바일 전화기로 구성되는 군에서 선택된, 전자 기기.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터의 채널 형성 영역을 형성하는 반도체층의 각각은 U자형, S자형, 나선형 또는 구불구불한 형상으로 구성된 군으로부터 선택된 형상으로 형성되는, 발광장치.
- 제 3 항에 있어서,상기 구동용 트랜지스터의 채널 형성 영역을 형성하는 상기 반도체층은 U자형, S자형, 나선형 또는 구불구불한 형상으로 구성된 군으로부터 선택된 형상으로 형성되는, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터 각각의 채널길이가 L, 채널폭이 W일 때, L × W>200㎛2인, 발광장치.
- 제 3 항에 있어서,상기 구동용 트랜지스터의 채널길이가 L, 채널폭이 W일 때, L × W>200㎛2인, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터 각각의 채널 길이가 L, 채널폭이 W일 때, L>5W인, 발광장치.
- 제 3 항에 있어서,상기 구동용 트랜지스터의 채널 길이가 L, 채널폭이 W일 때, L>5W인, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터의 각각은 상기 복수의 소스 신호선의 각각의 일부 또는 상기 복수의 전류 공급선의 각각의 일부의 적어도 하나와 중첩되는 위치에 배치되어 있는, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터의 게이트-소스간 전압이 VGS, 소스-드레인간 전압이 VDS, 스레시홀드 전압이 Vth일 때, 상기 복수의 구동용 트랜지스터가 |VDS|<|VGS|-|Vth|가 되도록 구동되는, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 구동용 트랜지스터의 게이트-소스간 전압이 VGS, 소스-드레인간 전압이 VDS, 스레시홀드 전압이 Vth일 때, 상기 복수의 구동용 트랜지스터가 |VDS|≥|VGS|-|Vth|를 만족하고 |VGS|가 4V 이상 14V 이하가 되도록 구동되는, 발광장치.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 발광 소자는 적색, 녹색, 청색 중 하나를 발광하고,상기 복수의 구동용 트랜지스터 각각의 채널 길이가 L, 채널폭이 W일 때, 상기 복수의 적색광용 발광 소자에 대응하는 상기 복수의 구동용 트랜지스터의 L/W, 상기 복수의 녹색광용 발광 소자에 대응하는 상기 복수의 구동용 트랜지스터의 L/W, 상기 복수의 청색광용 발광 소자에 대응하는 상기 복수의 구동용 트랜지스터의 L/W는 서로 다른, 발광장치.
- 제 2 항에 있어서,상기 복수의 스위칭용 트랜지스터와 상기 복수의 소거용 트랜지스터는 상기 복수의 스위칭용 트랜지스터 각각의 소스 영역에서의 어느 일점과 드레인 영역에서의 어느 일점 및 상기 복수의 소거용 트랜지스터 각각의 소스 영역에서의 어느 일점과 드레인 영역에서의 어느 일점이 모두 하나의 직선상에 포함되는 위치에 배치되어 있는, 발광장치.
- 제 2 항에 있어서,상기 복수의 스위칭용 트랜지스터와 상기 복수의 소거용 트랜지스터가 직선형으로 배치되어 있는, 발광장치.
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US20130248892A1 (en) | 2013-09-26 |
JP2014067046A (ja) | 2014-04-17 |
TWI280532B (en) | 2007-05-01 |
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US20210295773A1 (en) | 2021-09-23 |
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JP2015165328A (ja) | 2015-09-17 |
US6909240B2 (en) | 2005-06-21 |
JP2013080233A (ja) | 2013-05-02 |
CN101673508B (zh) | 2013-01-09 |
US10978613B2 (en) | 2021-04-13 |
US20050231122A1 (en) | 2005-10-20 |
JP2010002938A (ja) | 2010-01-07 |
JP2015072485A (ja) | 2015-04-16 |
TW200303503A (en) | 2003-09-01 |
US20080170005A1 (en) | 2008-07-17 |
JP5106506B2 (ja) | 2012-12-26 |
US8723760B2 (en) | 2014-05-13 |
US7262556B2 (en) | 2007-08-28 |
KR20030063196A (ko) | 2003-07-28 |
JP2016177304A (ja) | 2016-10-06 |
JP6025914B2 (ja) | 2016-11-16 |
JP2012150483A (ja) | 2012-08-09 |
CN1432984A (zh) | 2003-07-30 |
CN101673508A (zh) | 2010-03-17 |
JP5840749B2 (ja) | 2016-01-06 |
US20180026153A1 (en) | 2018-01-25 |
KR20090074005A (ko) | 2009-07-03 |
JP6239684B2 (ja) | 2017-11-29 |
KR100938641B1 (ko) | 2010-01-25 |
JP2012083771A (ja) | 2012-04-26 |
US20030222589A1 (en) | 2003-12-04 |
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