KR100882226B1 - 전력용 반도체장치 - Google Patents
전력용 반도체장치 Download PDFInfo
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- KR100882226B1 KR100882226B1 KR1020070070999A KR20070070999A KR100882226B1 KR 100882226 B1 KR100882226 B1 KR 100882226B1 KR 1020070070999 A KR1020070070999 A KR 1020070070999A KR 20070070999 A KR20070070999 A KR 20070070999A KR 100882226 B1 KR100882226 B1 KR 100882226B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 69
- 229920005591 polysilicon Polymers 0.000 abstract description 69
- 239000012535 impurity Substances 0.000 abstract description 28
- 238000009434 installation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 239000004020 conductor Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (3)
- 제1도전형의 제1의 반도체층과,상기 제1의 반도체층의 한쪽 면 위에 설치된 제2도전형의 제2의 반도체층과,상기 제2의 반도체층 위에 설치된 제2도전형의 제3의 반도체층과,상기 제3의 반도체층 위에 설치된 제1도전형의 제4의 반도체층과,상기 제4의 반도체층의 표면에서 상기 제3의 반도체층내로 그 저부가 도달하도록 하여, 서로 근접하여 설치되고, 나란히 설치된 트렌치와, 이 트렌치의 내면에 설치된 게이트 절연막과, 이 게이트 절연막의 내부를 메우도록 설치된 게이트 전극으로 이루어지는 2개의 트렌치 게이트와,상기 2개의 트렌치 게이트의 각각의 한쪽에만 인접하여, 상기 제4의 반도체층의 표면내에 설치된 제2도전형의 제1의 반도체 영역과,상기 제4의 반도체층 위에 설치되고, 상기 제1의 반도체 영역과 전기적으로 접속된 제1의 주전극과,상기 제4의 반도체층의 표면에서 상기 제3의 반도체층내로 그 저부가 도달하도록 설치된, 트렌치와, 이 트렌치의 내면에 설치된 절연막과, 이 절연막의 내부를 메우도록 설치되어 상기 제1의 주전극과 전기적으로 접속된 더미 전극으로 이루어지는 더미 트렌치와,상기 제1의 반도체층의 다른 쪽 면 위에 설치된 제2의 주전극을 구비한 것을 특징으로 하는 전력용 반도체장치.
- 제1도전형의 제1의 반도체층과,상기 제1의 반도체층의 한쪽 면 위에 설치된 제2도전형의 제2의 반도체층과,상기 제2의 반도체층 위에 설치된 제2도전형의 제3의 반도체층과,상기 제3의 반도체층 위에 설치된 제1도전형의 제4의 반도체층과,상기 제4의 반도체층의 표면에서 상기 제3의 반도체층내로 그 저부가 도달하도록 설치된 트렌치와, 이 트렌치의 내면에 설치된 게이트 절연막과, 이 게이트 절연막의 내부를 메우도록 설치된 게이트 전극으로 이루어지는 트렌치 게이트와,상기 트렌치 게이트의 한쪽에만 인접하여 상기 제4의 반도체층의 표면내에 설치된 제2도전형의 제1의 반도체 영역과,상기 제4의 반도체층 위에 설치되고, 상기 제1의 반도체 영역과 전기적으로 접속된 제1의 주전극과,상기 제4의 반도체층의 표면에서 상기 제3의 반도체층내로 그 저부가 도달하도록 설치된 트렌치와, 이 트렌치의 내면에 설치된 절연막과, 이 절연막의 내부를 메우도록 설치되어 상기 제1의 주전극과 전기적으로 접속된 더미 전극으로 이루어지는 더미 트렌치와,상기 제1의 반도체층의 다른 쪽 면 위에 설치된 제2의 주전극을 구비한 것을 특징으로 하는 전력용 반도체장치.
- 제 2항에 있어서,상기 제1의 반도체 영역은, 상기 트렌치 게이트의 연장 방향으로 소정의 길이를 가지고, 상기 연장 방향에 대하여 교대로 설치한 것을 특징으로 하는 전력용 반도체장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00267137 | 2006-09-29 | ||
JP2006267137A JP5128100B2 (ja) | 2006-09-29 | 2006-09-29 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
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KR20080029767A KR20080029767A (ko) | 2008-04-03 |
KR100882226B1 true KR100882226B1 (ko) | 2009-02-06 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070070999A KR100882226B1 (ko) | 2006-09-29 | 2007-07-16 | 전력용 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7888733B2 (ko) |
EP (2) | EP2731142A3 (ko) |
JP (1) | JP5128100B2 (ko) |
KR (1) | KR100882226B1 (ko) |
Families Citing this family (10)
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US7500010B2 (en) * | 2005-04-07 | 2009-03-03 | Jeffrey Paul Harrang | Adaptive file delivery system and method |
JP2011049393A (ja) * | 2009-08-27 | 2011-03-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP6190206B2 (ja) | 2012-08-21 | 2017-08-30 | ローム株式会社 | 半導体装置 |
JP6284314B2 (ja) | 2012-08-21 | 2018-02-28 | ローム株式会社 | 半導体装置 |
KR101745776B1 (ko) | 2015-05-12 | 2017-06-28 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 |
JP6509673B2 (ja) * | 2015-08-10 | 2019-05-08 | 株式会社東芝 | 半導体装置 |
CN106711204B (zh) * | 2015-11-12 | 2021-01-22 | 上海联星电子有限公司 | Igbt器件及其制作方法 |
CN106784019B (zh) * | 2016-12-20 | 2020-06-05 | 西安电子科技大学 | 一种Ge基固态等离子体PiN二极管及其制备方法 |
CN108417621A (zh) * | 2017-02-10 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | 绝缘栅双极型晶体管及其形成方法 |
JP7045180B2 (ja) * | 2017-12-18 | 2022-03-31 | 株式会社日立製作所 | パワー半導体装置、モジュール及び製造方法 |
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Also Published As
Publication number | Publication date |
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JP2008091373A (ja) | 2008-04-17 |
US7888733B2 (en) | 2011-02-15 |
EP1906453A3 (en) | 2013-07-10 |
JP5128100B2 (ja) | 2013-01-23 |
EP2731142A2 (en) | 2014-05-14 |
EP2731142A3 (en) | 2016-07-20 |
EP1906453B1 (en) | 2016-03-09 |
EP1906453A2 (en) | 2008-04-02 |
US20080079069A1 (en) | 2008-04-03 |
KR20080029767A (ko) | 2008-04-03 |
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