KR100880309B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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KR100880309B1
KR100880309B1 KR1020077017030A KR20077017030A KR100880309B1 KR 100880309 B1 KR100880309 B1 KR 100880309B1 KR 1020077017030 A KR1020077017030 A KR 1020077017030A KR 20077017030 A KR20077017030 A KR 20077017030A KR 100880309 B1 KR100880309 B1 KR 100880309B1
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gas
nitride film
semiconductor substrate
film
partial pressure
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KR20070097543A (ko
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다이스께 마쯔시따
고이찌 무라오까
고이찌 가또
야스시 나까사끼
유이찌로 미따니
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가부시끼가이샤 도시바
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
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    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
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    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
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    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
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    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
KR1020077017030A 2005-09-29 2006-08-28 반도체 장치의 제조 방법 Expired - Fee Related KR100880309B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005284057 2005-09-29
JPJP-P-2005-00284057 2005-09-29
JP2006176863A JP5283833B2 (ja) 2005-09-29 2006-06-27 半導体装置の製造方法
JPJP-P-2006-00176863 2006-06-27

Publications (2)

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KR20070097543A KR20070097543A (ko) 2007-10-04
KR100880309B1 true KR100880309B1 (ko) 2009-01-28

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Country Link
US (2) US7772129B2 (https=)
EP (1) EP1929513A1 (https=)
JP (1) JP5283833B2 (https=)
KR (1) KR100880309B1 (https=)
WO (1) WO2007037094A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法
KR101122347B1 (ko) * 2006-05-31 2012-03-23 도쿄엘렉트론가부시키가이샤 절연막의 형성 방법 및 반도체 장치의 제조 방법
JP4861204B2 (ja) 2007-01-22 2012-01-25 株式会社東芝 半導体装置およびその製造方法
JP2009054951A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 不揮発性半導体記憶素子及びその製造方法
JP4594973B2 (ja) 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
JP4611414B2 (ja) * 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5348898B2 (ja) 2008-01-22 2013-11-20 株式会社東芝 半導体装置およびその製造方法
JP2009252774A (ja) * 2008-04-01 2009-10-29 Toshiba Corp 半導体記憶装置およびその製造方法
JP2010016067A (ja) * 2008-07-01 2010-01-21 Sony Corp 不揮発性半導体メモリデバイス、その製造方法および動作方法
JP5443873B2 (ja) * 2008-07-28 2014-03-19 株式会社東芝 半導体装置及びその製造方法
JP5531296B2 (ja) * 2008-09-02 2014-06-25 株式会社東芝 不揮発性半導体記憶装置
US8524616B2 (en) * 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
JP2010177323A (ja) * 2009-01-28 2010-08-12 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
KR101340098B1 (ko) * 2009-09-17 2014-01-02 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JP5150606B2 (ja) * 2009-11-16 2013-02-20 株式会社東芝 不揮発性半導体記憶装置
KR101464209B1 (ko) * 2010-11-04 2014-11-21 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 컴퓨터 판독 가능한 기록 매체
US8664729B2 (en) 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for reduced gate resistance finFET
US10468412B2 (en) * 2016-06-28 2019-11-05 International Business Machines Corporation Formation of a semiconductor device with selective nitride grown on conductor
US10468409B2 (en) * 2018-03-14 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with oxidation-resist STI liner structure
US10957604B2 (en) 2018-10-31 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11302827B2 (en) * 2020-01-23 2022-04-12 Nanya Technology Corp. Semiconductor device with sidewall oxidized dielectric and method for fabricating the same
KR20240044860A (ko) * 2022-09-29 2024-04-05 (주)이큐테크플러스 고밀도 라디컬을 이용하여 계면을 질화하는 기법이 적용된 박막 생성 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020040847A1 (en) * 2000-03-13 2002-04-11 Tadahiro Ohmi Method of forming a dielectric film
KR20050060268A (ko) * 2003-12-16 2005-06-22 주식회사 하이닉스반도체 Ｓｏｎｏｓ 구조를 갖는 트랜지스터 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035819B2 (ja) * 1980-10-29 1985-08-16 日本電気株式会社 Ｘ線露光用マスクの製造方法
JPS5913335A (ja) * 1982-07-14 1984-01-24 Toshiba Corp 窒化膜形成方法
JPH0215630A (ja) * 1988-07-01 1990-01-19 Nec Corp 半導体装置の保護膜形成方法
JP3040556B2 (ja) * 1991-10-22 2000-05-15 沖電気工業株式会社 半導体装置の絶縁膜形成方法
JP3899150B2 (ja) * 1996-12-05 2007-03-28 シャープ株式会社 絶縁膜の形成方法
JP3326718B2 (ja) * 1999-03-19 2002-09-24 富士通株式会社 半導体装置の製造方法
US20020137362A1 (en) * 1999-07-29 2002-09-26 Rajarao Jammy Method for forming crystalline silicon nitride
JP2001176870A (ja) 1999-12-21 2001-06-29 Toyota Motor Corp 窒化膜形成方法
JP2002151486A (ja) * 2000-10-30 2002-05-24 Applied Materials Inc 基体処理方法及び装置並びに基体処理装置の運転方法
JP2002368122A (ja) * 2001-06-12 2002-12-20 Nec Corp 半導体装置及びその製造方法
US6503846B1 (en) * 2001-06-20 2003-01-07 Texas Instruments Incorporated Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
US7250375B2 (en) 2001-08-02 2007-07-31 Tokyo Electron Limited Substrate processing method and material for electronic device
US20030040171A1 (en) * 2001-08-22 2003-02-27 Weimer Ronald A. Method of composite gate formation
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
JP2003264190A (ja) 2002-03-08 2003-09-19 Toshiba Corp 半導体装置及びその製造方法
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法
JP4358504B2 (ja) 2002-12-12 2009-11-04 忠弘 大見 不揮発性半導体記憶装置の製造方法
WO2004065653A1 (ja) * 2003-01-24 2004-08-05 Research Institute For Applied Sciences 表面にａｉｎ域を有するアルミニウム材料及びその製造方法
JP3845073B2 (ja) * 2003-05-27 2006-11-15 株式会社東芝 半導体装置
JP2005089791A (ja) * 2003-09-12 2005-04-07 Sekisui Chem Co Ltd シリコン窒化膜形成方法
JP3887364B2 (ja) * 2003-09-19 2007-02-28 株式会社東芝 半導体装置の製造方法
JP2006216897A (ja) 2005-02-07 2006-08-17 Toshiba Corp 半導体装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020040847A1 (en) * 2000-03-13 2002-04-11 Tadahiro Ohmi Method of forming a dielectric film
KR20050060268A (ko) * 2003-12-16 2005-06-22 주식회사 하이닉스반도체 Ｓｏｎｏｓ 구조를 갖는 트랜지스터 제조 방법

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