KR100820529B1 - 발광 장치 및 그 제조방법, 면 발광 장치 - Google Patents

발광 장치 및 그 제조방법, 면 발광 장치 Download PDF

Info

Publication number
KR100820529B1
KR100820529B1 KR1020060042199A KR20060042199A KR100820529B1 KR 100820529 B1 KR100820529 B1 KR 100820529B1 KR 1020060042199 A KR1020060042199 A KR 1020060042199A KR 20060042199 A KR20060042199 A KR 20060042199A KR 100820529 B1 KR100820529 B1 KR 100820529B1
Authority
KR
South Korea
Prior art keywords
cavity
light emitting
inclined surface
emitting device
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020060042199A
Other languages
English (en)
Korean (ko)
Other versions
KR20070109348A (ko
Inventor
공성민
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38684294&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100820529(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020060042199A priority Critical patent/KR100820529B1/ko
Priority to US11/746,783 priority patent/US8680545B2/en
Priority to JP2007126415A priority patent/JP5242945B2/ja
Publication of KR20070109348A publication Critical patent/KR20070109348A/ko
Application granted granted Critical
Publication of KR100820529B1 publication Critical patent/KR100820529B1/ko
Priority to JP2012039856A priority patent/JP5225480B2/ja
Priority to JP2012001044U priority patent/JP3175535U/ja
Priority to JP2012039857A priority patent/JP5236823B2/ja
Priority to JP2013078354A priority patent/JP5563693B2/ja
Priority to US13/937,899 priority patent/US9564556B2/en
Priority to JP2014121535A priority patent/JP5936650B2/ja
Priority to JP2016094429A priority patent/JP6195956B2/ja
Priority to US15/385,355 priority patent/US9882095B2/en
Priority to JP2017157215A priority patent/JP6462065B2/ja
Priority to US15/840,967 priority patent/US10243112B2/en
Priority to JP2018242218A priority patent/JP6681970B2/ja
Priority to US16/269,935 priority patent/US10580943B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
KR1020060042199A 2006-05-11 2006-05-11 발광 장치 및 그 제조방법, 면 발광 장치 Active KR100820529B1 (ko)

Priority Applications (15)

Application Number Priority Date Filing Date Title
KR1020060042199A KR100820529B1 (ko) 2006-05-11 2006-05-11 발광 장치 및 그 제조방법, 면 발광 장치
US11/746,783 US8680545B2 (en) 2006-05-11 2007-05-10 Light emitting device and method for fabricating the same
JP2007126415A JP5242945B2 (ja) 2006-05-11 2007-05-11 発光装置及び発光装置の製造方法
JP2012039857A JP5236823B2 (ja) 2006-05-11 2012-02-27 発光装置及び発光装置の製造方法
JP2012039856A JP5225480B2 (ja) 2006-05-11 2012-02-27 発光装置及び発光装置の製造方法
JP2012001044U JP3175535U (ja) 2006-05-11 2012-02-27 発光装置及び発光装置の製造方法
JP2013078354A JP5563693B2 (ja) 2006-05-11 2013-04-04 発光装置及び発光装置の製造方法
US13/937,899 US9564556B2 (en) 2006-05-11 2013-07-09 Light emitting device and method for fabricating the same
JP2014121535A JP5936650B2 (ja) 2006-05-11 2014-06-12 発光装置及び発光装置の製造方法
JP2016094429A JP6195956B2 (ja) 2006-05-11 2016-05-10 側面発光型発光装置
US15/385,355 US9882095B2 (en) 2006-05-11 2016-12-20 Light emitting device and method for fabricating the same
JP2017157215A JP6462065B2 (ja) 2006-05-11 2017-08-16 側面発光型発光装置
US15/840,967 US10243112B2 (en) 2006-05-11 2017-12-13 Light emitting device and method for fabricating the same
JP2018242218A JP6681970B2 (ja) 2006-05-11 2018-12-26 側面発光型発光装置
US16/269,935 US10580943B2 (en) 2006-05-11 2019-02-07 Light emitting device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060042199A KR100820529B1 (ko) 2006-05-11 2006-05-11 발광 장치 및 그 제조방법, 면 발광 장치

Publications (2)

Publication Number Publication Date
KR20070109348A KR20070109348A (ko) 2007-11-15
KR100820529B1 true KR100820529B1 (ko) 2008-04-08

Family

ID=38684294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060042199A Active KR100820529B1 (ko) 2006-05-11 2006-05-11 발광 장치 및 그 제조방법, 면 발광 장치

Country Status (3)

Country Link
US (5) US8680545B2 (enExample)
JP (9) JP5242945B2 (enExample)
KR (1) KR100820529B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044548A3 (ko) * 2008-10-16 2010-07-01 엘지이노텍주식회사 발광 소자 패키지 및 그 제조방법, 발광 장치
KR20130017461A (ko) * 2011-08-10 2013-02-20 엘지이노텍 주식회사 발광소자 패키지 및 조명 장치

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2901278B2 (ja) 1989-09-27 1999-06-07 新日本製鐵株式会社 水処理フィルター及びその製造方法
KR100820529B1 (ko) 2006-05-11 2008-04-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법, 면 발광 장치
KR20080065451A (ko) * 2007-01-09 2008-07-14 삼성전기주식회사 Ｌｅｄ 패키지
JP5084365B2 (ja) * 2007-06-21 2012-11-28 シャープ株式会社 Ｌｅｄ発光装置およびそれを光源とする液晶バックライト装置
JP5416975B2 (ja) * 2008-03-11 2014-02-12 ローム株式会社 半導体発光装置
KR101028852B1 (ko) * 2008-03-26 2011-04-12 서울반도체 주식회사 사이드뷰 ｌｅｄ 패키지 및 이를 포함하는 백라이트 모듈
KR20100003320A (ko) * 2008-06-24 2010-01-08 엘지이노텍 주식회사 발광 다이오드 패키지
KR101093249B1 (ko) * 2008-09-30 2011-12-14 서울반도체 주식회사 발광 소자
WO2010150754A1 (ja) * 2009-06-22 2010-12-29 日亜化学工業株式会社 発光装置
KR101118988B1 (ko) * 2010-03-11 2012-03-12 (주)티에스티아이테크 백 라이트 유닛 및 이를 이용한 액정 표시 장치
JP5777879B2 (ja) 2010-12-27 2015-09-09 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
JP2013179271A (ja) * 2012-01-31 2013-09-09 Rohm Co Ltd 発光装置および発光装置の製造方法
KR20130118552A (ko) * 2012-04-20 2013-10-30 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 발광 장치
KR101949387B1 (ko) * 2012-09-12 2019-02-19 엘지디스플레이 주식회사 엘이디패키지 및 그 제조방법과 엘이디패키지를 포함하는 액정표시장치
KR102076243B1 (ko) * 2013-09-04 2020-02-12 엘지이노텍 주식회사 발광 소자 패키지
JP6414427B2 (ja) * 2013-10-03 2018-10-31 日亜化学工業株式会社 発光装置実装構造体
WO2016035508A1 (ja) * 2014-09-01 2016-03-10 シャープ株式会社 発光装置
JP6730017B2 (ja) * 2014-11-10 2020-07-29 エルジー イノテック カンパニー リミテッド 発光素子パッケージ、及びこれを含む照明システム
JP6651699B2 (ja) * 2015-02-27 2020-02-19 日亜化学工業株式会社 側面発光型発光装置の製造方法
DE102015105137A1 (de) * 2015-04-02 2016-10-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6793139B2 (ja) * 2018-01-25 2020-12-02 日機装株式会社 半導体発光装置
KR102490162B1 (ko) * 2018-02-14 2023-01-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
KR101970938B1 (ko) * 2019-02-11 2019-04-19 진재언 지향각이 조절된 발광소자 패키지 및 이를 이용한 발광장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050041986A (ko) * 2003-10-30 2005-05-04 쿄세라 코포레이션 발광소자 수납용 패키지, 발광장치, 및 조명장치
KR20050081716A (ko) * 2004-02-16 2005-08-19 엘지이노텍 주식회사 발광 다이오드 패키지

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01168079A (ja) 1987-12-23 1989-07-03 Ibiden Co Ltd Ｌｅｄ搭載用基板
JPH0497366U (enExample) * 1991-01-17 1992-08-24
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP3915196B2 (ja) * 1997-10-16 2007-05-16 松下電器産業株式会社 半導体発光装置
JP3319392B2 (ja) * 1998-06-17 2002-08-26 松下電器産業株式会社 半導体発光装置
JP2000269551A (ja) 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
JP3421621B2 (ja) 1999-12-24 2003-06-30 三洋電機株式会社 面光源装置
JP2002009349A (ja) 2000-06-26 2002-01-11 Koha Co Ltd Ｌｅｄ面発光装置およびその製造方法
JP2002033520A (ja) 2000-07-14 2002-01-31 Toshiba Electronic Engineering Corp 半導体発光装置
JP2002093202A (ja) * 2000-09-13 2002-03-29 Ryoden Trading Co Ltd 面発光バックライト装置の製造方法及び面発光バックライト装置
US6547416B2 (en) * 2000-12-21 2003-04-15 Koninklijke Philips Electronics N.V. Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs
JP2002217459A (ja) 2001-01-16 2002-08-02 Stanley Electric Co Ltd 発光ダイオード及び該発光ダイオードを光源として用いた液晶表示器のバックライト装置
JP2002299698A (ja) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd 発光装置
WO2003016782A1 (en) * 2001-08-09 2003-02-27 Matsushita Electric Industrial Co., Ltd. Led illuminator and card type led illuminating light source
JP2003234008A (ja) 2002-02-06 2003-08-22 Nichia Chem Ind Ltd 面発光装置
JP2003347600A (ja) 2002-05-28 2003-12-05 Matsushita Electric Works Ltd Ｌｅｄ実装基板
JP2004053807A (ja) 2002-07-18 2004-02-19 Renesas Technology Corp マスクメーカ選定方法
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP2004228550A (ja) * 2002-11-25 2004-08-12 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP4336153B2 (ja) * 2003-02-19 2009-09-30 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP4081394B2 (ja) 2003-03-18 2008-04-23 京セラ株式会社 発光素子収納用パッケージおよび発光装置
KR20040087566A (ko) 2003-04-08 2004-10-14 엘지전자 주식회사 이동 통신 단말기의 진동 모드 설정 방법
JP4070208B2 (ja) 2003-04-21 2008-04-02 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP2004327504A (ja) 2003-04-21 2004-11-18 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP4645071B2 (ja) * 2003-06-20 2011-03-09 日亜化学工業株式会社 パッケージ成型体およびそれを用いた半導体装置
JP2005078937A (ja) 2003-08-29 2005-03-24 Ichikoh Ind Ltd 薄型発光装置
US20050133808A1 (en) * 2003-09-11 2005-06-23 Kyocera Corporation Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
JP4288481B2 (ja) * 2003-10-02 2009-07-01 シチズン電子株式会社 発光ダイオード
JP4934954B2 (ja) * 2003-10-15 2012-05-23 日亜化学工業株式会社 ヒートシンク及びヒートシンクを備えた半導体装置
JP2005136349A (ja) 2003-10-31 2005-05-26 Toyoda Gosei Co Ltd 発光装置及びその反射ミラー
JP3906199B2 (ja) 2003-11-27 2007-04-18 京セラ株式会社 発光装置
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP4654670B2 (ja) * 2003-12-16 2011-03-23 日亜化学工業株式会社 発光装置及びその製造方法
JP4309242B2 (ja) * 2003-12-19 2009-08-05 Ｎｅｃライティング株式会社 赤色蛍光体材料、赤色蛍光体材料を用いた白色発光ダイオードおよび白色発光ダイオードを用いた照明機器
JP4325412B2 (ja) 2004-01-21 2009-09-02 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP2005252168A (ja) * 2004-03-08 2005-09-15 Nichia Chem Ind Ltd 表面実装型発光装置
US7009285B2 (en) * 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
JP2005285874A (ja) 2004-03-26 2005-10-13 Kyocera Corp 発光素子収納用パッケージおよび発光装置ならびに照明装置
JP4544619B2 (ja) 2004-06-08 2010-09-15 ローム株式会社 発光ダイオードランプ
KR20060000544A (ko) * 2004-06-29 2006-01-06 삼성전자주식회사 표시 장치용 백라이트, 표시 장치용 광원, 광원용 발광다이오드
JP4789433B2 (ja) * 2004-06-30 2011-10-12 三洋電機株式会社 Ｌｅｄ表示器用筺体及びｌｅｄ表示器
JP4521227B2 (ja) * 2004-07-14 2010-08-11 株式会社東芝 窒素を含有する蛍光体の製造方法
KR100674827B1 (ko) * 2004-07-28 2007-01-25 삼성전기주식회사 백라이트 유니트용 ｌｅｄ 패키지
US7402842B2 (en) * 2004-08-09 2008-07-22 M/A-Com, Inc. Light emitting diode package
JP2006058327A (ja) * 2004-08-17 2006-03-02 Sony Corp 光導波路装置及び光結合装置
JP5081370B2 (ja) 2004-08-31 2012-11-28 日亜化学工業株式会社 発光装置
JP2006100575A (ja) 2004-09-29 2006-04-13 Hitachi Cable Precision Co Ltd 表面実装型発光装置
US7385227B2 (en) * 2005-04-12 2008-06-10 Avago Technologies Ecbu Ip Pte Ltd Compact light emitting device package with enhanced heat dissipation and method for making the package
KR100650191B1 (ko) * 2005-05-31 2006-11-27 삼성전기주식회사 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드
JP2006351773A (ja) 2005-06-15 2006-12-28 Rohm Co Ltd 半導体発光装置
US7279722B2 (en) * 2005-10-21 2007-10-09 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Light emitting device with adjustable reflector cup
US7943946B2 (en) * 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
KR100780176B1 (ko) 2005-11-25 2007-11-27 삼성전기주식회사 측면 방출 발광다이오드 패키지
KR100820529B1 (ko) * 2006-05-11 2008-04-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법, 면 발광 장치
JP4729441B2 (ja) * 2006-06-09 2011-07-20 スタンレー電気株式会社 車両用灯具
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
US8030674B2 (en) * 2008-04-28 2011-10-04 Lextar Electronics Corp. Light-emitting diode package with roughened surface portions of the lead-frame
JP4530082B2 (ja) * 2008-07-31 2010-08-25 エプソンイメージングデバイス株式会社 バックライトユニット、電気光学装置及び電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050041986A (ko) * 2003-10-30 2005-05-04 쿄세라 코포레이션 발광소자 수납용 패키지, 발광장치, 및 조명장치
KR20050081716A (ko) * 2004-02-16 2005-08-19 엘지이노텍 주식회사 발광 다이오드 패키지

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044548A3 (ko) * 2008-10-16 2010-07-01 엘지이노텍주식회사 발광 소자 패키지 및 그 제조방법, 발광 장치
CN101981714A (zh) * 2008-10-16 2011-02-23 Lg伊诺特有限公司 发光器件封装及其制造方法和发光装置
CN101981714B (zh) * 2008-10-16 2014-05-07 Lg伊诺特有限公司 发光器件封装及其制造方法和发光装置
EP2249407B1 (en) * 2008-10-16 2020-04-22 LG Innotek Co., Ltd. Light emitting device package, manufacturing method thereof, and lighting apparatus
KR20130017461A (ko) * 2011-08-10 2013-02-20 엘지이노텍 주식회사 발광소자 패키지 및 조명 장치
KR101714073B1 (ko) * 2011-08-10 2017-03-08 엘지이노텍 주식회사 발광소자 패키지 및 조명 장치

Also Published As

Publication number Publication date
JP6195956B2 (ja) 2017-09-13
JP2013131784A (ja) 2013-07-04
JP2016167628A (ja) 2016-09-15
JP6681970B2 (ja) 2020-04-15
JP2007306002A (ja) 2007-11-22
JP2017201729A (ja) 2017-11-09
JP2014160883A (ja) 2014-09-04
JP3175535U (ja) 2012-05-17
US20190172981A1 (en) 2019-06-06
US20130334554A1 (en) 2013-12-19
JP5236823B2 (ja) 2013-07-17
US10243112B2 (en) 2019-03-26
JP2012134529A (ja) 2012-07-12
JP5936650B2 (ja) 2016-06-22
JP6462065B2 (ja) 2019-01-30
US20170104136A1 (en) 2017-04-13
US8680545B2 (en) 2014-03-25
JP2019062237A (ja) 2019-04-18
US9564556B2 (en) 2017-02-07
JP5563693B2 (ja) 2014-07-30
JP5225480B2 (ja) 2013-07-03
US10580943B2 (en) 2020-03-03
US20070262332A1 (en) 2007-11-15
KR20070109348A (ko) 2007-11-15
US9882095B2 (en) 2018-01-30
JP5242945B2 (ja) 2013-07-24
JP2012134530A (ja) 2012-07-12
US20180102462A1 (en) 2018-04-12

Similar Documents

Publication Publication Date Title
KR100820529B1 (ko) 발광 장치 및 그 제조방법, 면 발광 장치
KR100901618B1 (ko) 발광 다이오드 패키지 및 제조방법
US9159884B2 (en) Light emitting device having cavity side surfaces with recesses
US20140225134A1 (en) Light emitting device package
CN102623612A (zh) 具有改进树脂填充和高附着力的高亮度发光二级管(led)封装、系统及方法
KR20110108832A (ko) 발광 소자, 라이트 유닛 및 이를 구비한 표시 장치
TWI463691B (zh) Light emitting device
KR20110103929A (ko) 발광 다이오드 패키지 및 이를 구비한 라이트 유닛
KR101220038B1 (ko) 발광 장치
KR20140145409A (ko) 발광모듈 및 이를 구비한 발광 장치
KR20140096847A (ko) 발광소자 모듈
KR20070104029A (ko) Ｌｅｄ 모듈
KR20080090062A (ko) 발광 다이오드 패키지 및 그 제조방법, 면 발광 장치
KR20080060114A (ko) 발광 다이오드 패키지 및 그 제조방법, 면 발광 장치
KR20140028985A (ko) 발광소자 패키지
KR20130014899A (ko) 발광소자 패키지
KR20100077864A (ko) 발광소자 패키지

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

J202 Request for trial for correction [limitation]
PJ0202 Trial for correction

St.27 status event code: A-5-5-V10-V11-apl-PJ0202

FPAY Annual fee payment

Payment date: 20140305

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20150305

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

J121 Written withdrawal of request for trial
PJ1201 Withdrawal of trial

St.27 status event code: A-5-5-V10-V13-apl-PJ1201

J202 Request for trial for correction [limitation]
PJ0202 Trial for correction

St.27 status event code: A-5-5-V10-V11-apl-PJ0202

J301 Trial decision

Free format text: TRIAL DECISION FOR CORRECTION REQUESTED 20151119

Effective date: 20160222

PJ1301 Trial decision

St.27 status event code: A-5-5-V10-V15-crt-PJ1301

Decision date: 20160222

Appeal event data comment text: Appeal Kind Category : Correction, Appeal Ground Text : 0820529

Appeal request date: 20151119

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015105000122

FPAY Annual fee payment

Payment date: 20160304

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20160316

Republication note text: Request for Public Notice of Correction Statement

Gazette number: 1008205290000

Gazette reference publication date: 20080408

FPAY Annual fee payment

Payment date: 20170307

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20180306

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190313

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 18

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 19