KR100766393B1 - 규소 웨이퍼의 제조방법 - Google Patents
규소 웨이퍼의 제조방법 Download PDFInfo
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- KR100766393B1 KR100766393B1 KR1020047020072A KR20047020072A KR100766393B1 KR 100766393 B1 KR100766393 B1 KR 100766393B1 KR 1020047020072 A KR1020047020072 A KR 1020047020072A KR 20047020072 A KR20047020072 A KR 20047020072A KR 100766393 B1 KR100766393 B1 KR 100766393B1
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 188
- 239000010703 silicon Substances 0.000 title claims abstract description 188
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 187
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- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
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Abstract
Description
[Oi](atoms/cm3) | 온도T(℃) | 1/(k(T+273))(1/eV) |
3.020E + 17 | 1087 | 8.533 |
3.766E + 17 | 1113 | 8.373 |
5.191E + 17 | 1175 | 8.014 |
5.816E + 17 | 1188 | 7.943 |
6.005E + 17 | 1200 | 7.878 |
잉곳의 상단 | 잉곳의 하단 | |||||
결정중심 | 중심으로부터 50mm | 중심으로부터 90mm | 결정중심 | 중심으로부터 50mm | 중심으로부터 90mm | |
중성자 조사 전 | p-7869 | p-7791 | p-7771 | p-7347 | p-6840 | p-7423 |
중성자 조사 후 | n-4.73 | n-4.89 | n-4.85 | n-4.94 | n-5.00 | n-4.95 |
Claims (22)
- 규소 단결정으로부터 슬라이스된 규소 웨이퍼를 산화성 분위기에서 열처리하는 규소 웨이퍼의 제조방법에 있어서,산화성 분위기에서 열처리하는 온도를 T(℃)로 하고, 규소 웨이퍼의 격자간 산소 농도를 [Oi](atoms/cm3)으로 하여, 온도 T와 격자간 산소 농도[Oi]의 조합이 하기 식을 만족시키는 것과 동시에,상기 산화성 분위기에서의 열처리 후에 규소 웨이퍼를 경면 연마하는 것을 특징으로 하는 규소 웨이퍼의 제조방법.[Oi] ≤2.123 × 1021exp(-1.035/k(T+273))(여기서, 격자간 산소 농도[Oi]은, FT-IR법으로 측정한 값(ASTM F-121, 1979년), k는 볼츠만 정수 8.617 × 10-5(eV/K)이다.)
- 제 1항에 있어서, 상기 규소 단결정으로서, 중성자 조사에 의해 인이 도핑된 단결정을 사용하는 것을 특징으로 하는 규소 웨이퍼의 제조방법.
- 제 1항에 있어서, 상기 규소 단결정으로서, 질소가 2×1013 atoms/cm3이상 도핑된 단결정을 사용하거나, 탄소가 5×1016 atoms/cm3이상 도핑된 단결정을 사용하는 것을 특징으로 하는 규소 웨이퍼의 제조방법.
- 삭제
- 삭제
- 제 1항에 기재된 경면 연마 후의 규소 웨이퍼를 활성층측 웨이퍼로서 사용함으로써, SOI웨이퍼를 제조하는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 활성층측 규소 웨이퍼에 산화성 분위기에서 열처리를 실시함으로써, 매몰 산화막을 형성하고, 이 후, 그 매몰 산화막을 개재하여 지지측 웨이퍼에 접착시켜서 접착 SOI웨이퍼를 제조하는 SOI웨이퍼의 제조방법에 있어서,상기 산화 열처리가, 활성층측 규소 웨이퍼를 산화성 분위기에서 열처리하는 온도를 T(℃)로 하고, 활성층측 규소 웨이퍼의 격자간 산소 농도를 [Oi](atoms/cm3)로 하였을 때, 상기 열처리 온도T와 활성층측 규소 웨이퍼의 격자간 산소 농도[Oi]의 조합이 하기 식을 만족시키는 것과 동시에,상기 산화성 분위기에서의 열처리 후에 상기 활성층측 규소 웨이퍼를 경면 연마하는 것을 특징으로 하는 SOI웨이퍼의 제조방법.[Oi]≤2.123×1021exp(-1.035/k(T+273))(여기서, 격자간 산소 농도[Oi]는, FT-IR법으로 측정한 값(ASTM F-121, 1979년), k는 볼츠만 정수 8.617×10-5(eV/K)이다.)
- 제 7항에 있어서, 상기 활성층측 규소 웨이퍼가, 중성자 조사에 의해 인이 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 제 7항에 있어서, 상기 활성층측 규소 웨이퍼가, 질소가 2×1013 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되거나, 또는 탄소가 5×1016 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 삭제
- 활성층측 규소 웨이퍼를 매몰 산화막을 개재하여 지지측 웨이퍼에 접착시킨 후에 산화성 분위기에서 접착 강화 열처리를 실시해서 접착 SOI웨이퍼를 제조하는 SOI웨이퍼의 제조방법에 있어서,상기 접착 강화 열처리가, 산화성 분위기에서 접착 강화 열처리하는 온도를 T(℃)로 하고, 활성층측 규소 웨이퍼의 격자간 산소 농도를 [Oi](atoms/cm3)로 하여, 온도T와 격자간 산소 농도[Oi]의 조합이 하기 식을 만족시키는 것과 동시에,상기 산화성 분위기에서의 열처리 후에 상기 활성층측 규소 웨이퍼를 경면 연마하는 것을 특징으로 하는 SOI웨이퍼의 제조방법.[Oi] ≤ 2.123 ×1021exp(-1.035/k(T+273))(여기서, 격자간 산소 농도[Oi]는, FT-lR법으로 측정한 값(ASTM F-121, 1979년), k는 볼츠만 정수 8.617×10-5(eV/K)이다.)
- 제 11항에 있어서, 상기 활성층측 규소 웨이퍼가, 중성자 조사에 의해 인이 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 제 11항에 있어서, 상기 활성층측 규소 웨이퍼가, 질소가 2×1013 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되거나, 또는 탄소가 5×1016 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 삭제
- 산화성 분위기에서 열처리하는 온도를 T(℃)로 하고, 규소 웨이퍼의 격자간 산소 농도를 [Oi](atoms/cm3)로 하였을 때, 열처리 온도T와 웨이퍼의 격자간 산소 농도[Oi]의 조합이 하기 식을 만족시키는 산화 열처리를 실시한 후, 산화막을 제거하여 경면 연마를 행하여 활성층측 규소 웨이퍼를 제작하고,이 활성층측 규소 웨이퍼에 산화막을 형성하고, 이 산화막을 개재하여 이온 주입함으로써, 이 활성층측 규소 웨이퍼에 이온 주입층을 형성하고,이어서, 이 활성층측 규소 웨이퍼를 상기 산화막을 개재하여 지지측 웨이퍼에 접착시켜 접착 웨이퍼를 형성하고,이 후, 이 접착 웨이퍼를 소정 온도로 유지하여 열처리함으로써, 상기 이온 주입층을 경계로서 활성층측 규소 웨이퍼의 일부를 박리시켜 SOI웨이퍼를 제조하는 것을 특징으로 하는 SOI웨이퍼의 제조방법.[Oi] ≤ 2.123×1021exp(-1.035/k(T+273))(여기서, 격자간 산소 농도[Oi]는, FT-IR법으로 측정한 값(ASTM F-121, 1979년), k는 볼츠만 정수 8.617×10-5(eV/K)이다.)
- 제 15항에 있어서, 박리된 활성층측 웨이퍼의 표면을 경면 연마하고, 새로운 SOI웨이퍼의 활성층을 형성하는 기판으로서 반복 사용하는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 제 15항 또는 제 16항에 있어서, 상기 활성층측 규소 웨이퍼가, 중성자 조사에 의해 인이 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 제 15항에 있어서, 상기 활성층측 규소 웨이퍼가, 질소가 2×1013 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되거나, 또는 탄소가 5×1016 atoms/cm3이상 도핑된 규소 단결정을 사용하여 제작되는 것을 특징으로 하는 SOI웨이퍼의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
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