KR100760243B1 - 플라즈마 리액터 내의 천공된 플라즈마 한정 링 및 이 한정 링을 구비하여 플라즈마로 기판을 처리하기 위한 디바이스 및 리액터 및 방법 - Google Patents

플라즈마 리액터 내의 천공된 플라즈마 한정 링 및 이 한정 링을 구비하여 플라즈마로 기판을 처리하기 위한 디바이스 및 리액터 및 방법 Download PDF

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KR100760243B1
KR100760243B1 KR1020017008021A KR20017008021A KR100760243B1 KR 100760243 B1 KR100760243 B1 KR 100760243B1 KR 1020017008021 A KR1020017008021 A KR 1020017008021A KR 20017008021 A KR20017008021 A KR 20017008021A KR 100760243 B1 KR100760243 B1 KR 100760243B1
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plasma
perforated
confinement ring
ring
perforations
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KR20010089689A (ko
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루민 리
조지 뮬러
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020017008021A 1998-12-28 1999-12-22 플라즈마 리액터 내의 천공된 플라즈마 한정 링 및 이 한정 링을 구비하여 플라즈마로 기판을 처리하기 위한 디바이스 및 리액터 및 방법 Expired - Lifetime KR100760243B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/222,588 1998-12-28
US09/222,588 US6178919B1 (en) 1998-12-28 1998-12-28 Perforated plasma confinement ring in plasma reactors

Publications (2)

Publication Number Publication Date
KR20010089689A KR20010089689A (ko) 2001-10-08
KR100760243B1 true KR100760243B1 (ko) 2007-09-19

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ID=22832839

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017008021A Expired - Lifetime KR100760243B1 (ko) 1998-12-28 1999-12-22 플라즈마 리액터 내의 천공된 플라즈마 한정 링 및 이 한정 링을 구비하여 플라즈마로 기판을 처리하기 위한 디바이스 및 리액터 및 방법

Country Status (6)

Country Link
US (2) US6178919B1 (enExample)
EP (1) EP1149403B1 (enExample)
JP (3) JP5013632B2 (enExample)
KR (1) KR100760243B1 (enExample)
TW (1) TW443078B (enExample)
WO (1) WO2000039837A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023068698A1 (ko) * 2021-10-20 2023-04-27 (주)아이씨디 축전 결합 플라즈마 기판 처리 장치

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