KR20050101214A - 플라즈마 처리 시스템에서의 에칭 동안 포토레지스트일그러짐을 감소시키는 방법 - Google Patents
플라즈마 처리 시스템에서의 에칭 동안 포토레지스트일그러짐을 감소시키는 방법 Download PDFInfo
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- KR20050101214A KR20050101214A KR1020057014934A KR20057014934A KR20050101214A KR 20050101214 A KR20050101214 A KR 20050101214A KR 1020057014934 A KR1020057014934 A KR 1020057014934A KR 20057014934 A KR20057014934 A KR 20057014934A KR 20050101214 A KR20050101214 A KR 20050101214A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- xenon
- gas mixture
- source gas
- flow rate
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 94
- 238000005530 etching Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 title claims abstract description 22
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 49
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims description 75
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 description 10
- 239000003085 diluting agent Substances 0.000 description 8
- 229910052743 krypton Inorganic materials 0.000 description 8
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 O 2 Chemical compound 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (11)
- 플라즈마 처리 챔버를 내부에 구비한 플라즈마 처리 시스템에서, 기판상의 층을 소정의 피처 (feature) 로 에칭할 때에 포토레지스트 위글링 (wiggling) 을 실질적으로 감소시키는 방법으로서,포토레지스트 마스크 아래에 배치된 상기 층을 그 상에 갖는 상기 기판을 상기 플라즈마 처리 챔버 내부로 도입하는 단계;에천트 소스 가스 혼합물을 상기 플라즈마 처리 챔버 내부로 유입시키는 단계로서, 상기 에천트 소스 가스 혼합물은 크세논 (xenon) 및 활성 에천트 (active etchant) 를 포함하고, 상기 크세논의 유량 (flow rate) 은 상기 에천트 소스 가스 혼합물의 유량의 35 % 이상이며, 상기 에천트 소스 가스 혼합물은 아르곤을 더 포함하고, 상기 크세논의 유량은 상기 크세논의 유량과 상기 아르곤의 유량의 합의 약 50 내지 90 % 인, 상기 유입시키는 단계;상기 에천트 소스 가스 혼합물로부터 플라즈마를 스트라이킹 (strike) 하는 단계; 및상기 크세논의 유량이 상기 포토레지스트 위글링을 감소시키면서 상기 에천트 소스 가스 혼합물로부터 생성된 상기 플라즈마에 의해서 상기 층을 상기 피처로 에칭하는 단계를 포함하는, 포토레지스트 위글링 저감 방법.
- 제 1 항에 있어서,상기 크세논의 상기 유량은 상기 에천트 소스 가스 혼합물의 95 % 이하인, 포토레지스트 위글링 저감 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 에천트 소스 가스 혼합물은 희귀 가스를 더 포함하는, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 플라즈마 처리 챔버는 다중, 동조가능한 주파수로 용량성으로 결합되는 에칭 챔버이며,상기 스트라이킹 단계는 용량성 결합을 사용하여 상기 플라즈마를 스트라이킹하는 단계인, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,에칭되는 상기 층은 실리콘 산화물 층인, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 활성 에천트는 플루오로카본 및 하이드로플루오로카본 중 적어도 하나로부터 선택되는, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 활성 에천트는 산소를 더 포함하는, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 7 항 중 어느 한 항에 따른 방법을 사용하여 제조된 반도체 칩.
- 제 1 항 내지 제 7 항 중 어느 한 항에 따른 방법을 수행하는 다중 주파수 용량성 결합 에칭 챔버.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,상기 포토레지스트는 딥 UV 포토레지스트인, 포토레지스트 위글링 저감 방법.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,상기 포토레지스트는 193 nm 포토레지스트인, 포토레지스트 위글링 저감 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/366,201 | 2003-02-12 | ||
US10/366,201 US6942816B2 (en) | 2003-02-12 | 2003-02-12 | Methods of reducing photoresist distortion while etching in a plasma processing system |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050101214A true KR20050101214A (ko) | 2005-10-20 |
KR101065240B1 KR101065240B1 (ko) | 2011-09-16 |
Family
ID=32824678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057014934A KR101065240B1 (ko) | 2003-02-12 | 2004-02-03 | 플라즈마 처리 시스템에서의 에칭 동안 포토레지스트일그러짐을 감소시키는 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6942816B2 (ko) |
JP (1) | JP4548618B2 (ko) |
KR (1) | KR101065240B1 (ko) |
CN (1) | CN100423182C (ko) |
TW (1) | TWI342045B (ko) |
WO (1) | WO2004073025A2 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040219790A1 (en) * | 2003-04-30 | 2004-11-04 | Wilson Aaron R | Etching methods, RIE methods, and methods of increasing the stability of photoresist during RIE |
JP4729884B2 (ja) * | 2003-09-08 | 2011-07-20 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
WO2007034559A1 (ja) | 2005-09-26 | 2007-03-29 | Tadahiro Ohmi | プラズマ処理方法及びプラズマ処理装置 |
JP4182125B2 (ja) * | 2006-08-21 | 2008-11-19 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US7704849B2 (en) * | 2007-12-03 | 2010-04-27 | Micron Technology, Inc. | Methods of forming trench isolation in silicon of a semiconductor substrate by plasma |
US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
JP4978512B2 (ja) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
JP2010283095A (ja) * | 2009-06-04 | 2010-12-16 | Hitachi Ltd | 半導体装置の製造方法 |
US8304262B2 (en) * | 2011-02-17 | 2012-11-06 | Lam Research Corporation | Wiggling control for pseudo-hardmask |
JP5819154B2 (ja) | 2011-10-06 | 2015-11-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置 |
CN104658964B (zh) * | 2013-11-19 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | 通孔的形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3298161B2 (ja) * | 1991-10-29 | 2002-07-02 | ソニー株式会社 | ドライエッチング方法 |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JP3440735B2 (ja) * | 1996-12-26 | 2003-08-25 | ソニー株式会社 | ドライエッチング方法 |
US5893757A (en) * | 1997-01-13 | 1999-04-13 | Applied Komatsu Technology, Inc. | Tapered profile etching method |
JPH10242028A (ja) * | 1997-02-27 | 1998-09-11 | Sony Corp | 層間絶縁膜とレジスト材料層との密着性改善方法 |
JPH1116888A (ja) * | 1997-06-24 | 1999-01-22 | Hitachi Ltd | エッチング装置及びその運転方法 |
JP3838397B2 (ja) * | 1997-12-02 | 2006-10-25 | 忠弘 大見 | 半導体製造方法 |
US6228775B1 (en) * | 1998-02-24 | 2001-05-08 | Micron Technology, Inc. | Plasma etching method using low ionization potential gas |
US6355181B1 (en) * | 1998-03-20 | 2002-03-12 | Surface Technology Systems Plc | Method and apparatus for manufacturing a micromechanical device |
US6797189B2 (en) * | 1999-03-25 | 2004-09-28 | Hoiman (Raymond) Hung | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon |
JP3472196B2 (ja) | 1999-06-01 | 2003-12-02 | キヤノン株式会社 | エッチング方法及びそれを用いた半導体装置の製造方法 |
US6746961B2 (en) * | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
US6649531B2 (en) * | 2001-11-26 | 2003-11-18 | International Business Machines Corporation | Process for forming a damascene structure |
US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
-
2003
- 2003-02-12 US US10/366,201 patent/US6942816B2/en not_active Expired - Lifetime
-
2004
- 2004-02-03 WO PCT/US2004/003139 patent/WO2004073025A2/en active Application Filing
- 2004-02-03 CN CNB2004800094234A patent/CN100423182C/zh not_active Expired - Fee Related
- 2004-02-03 KR KR1020057014934A patent/KR101065240B1/ko active IP Right Grant
- 2004-02-03 JP JP2006503304A patent/JP4548618B2/ja not_active Expired - Fee Related
- 2004-02-10 TW TW093103086A patent/TWI342045B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2004073025A3 (en) | 2005-03-03 |
CN100423182C (zh) | 2008-10-01 |
WO2004073025A2 (en) | 2004-08-26 |
KR101065240B1 (ko) | 2011-09-16 |
US20040155012A1 (en) | 2004-08-12 |
US6942816B2 (en) | 2005-09-13 |
JP2006517743A (ja) | 2006-07-27 |
CN1771581A (zh) | 2006-05-10 |
TWI342045B (en) | 2011-05-11 |
JP4548618B2 (ja) | 2010-09-22 |
TW200425332A (en) | 2004-11-16 |
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