JP5766230B2 - プラズマ処理リアクタ - Google Patents
プラズマ処理リアクタ Download PDFInfo
- Publication number
- JP5766230B2 JP5766230B2 JP2013095385A JP2013095385A JP5766230B2 JP 5766230 B2 JP5766230 B2 JP 5766230B2 JP 2013095385 A JP2013095385 A JP 2013095385A JP 2013095385 A JP2013095385 A JP 2013095385A JP 5766230 B2 JP5766230 B2 JP 5766230B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- confinement ring
- perforated
- substrate
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 41
- 239000007789 gas Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000011109 contamination Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000006227 byproduct Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
12…マスク
14…下地層
16…基板
18…開口部
20…エッチング形状
22…直径
24…深さ
100…平行平板型リアクタ
102…チャンバの壁
104…トップ電極
105…ガス分布アパーチャ
106…第1のRF電源
108…トップシュラウド
110…ボトム電極
112…第2のRF電源
114…基板
116…フォーカスリング
118…シリコンリング
120…テフロンシュラウド
122…閉じ込めリング
124…同心リング
126…スペース
128…ポート
130…プラズマ
132…距離
200…平行平板型リアクタ
202…チャンバの壁
204…トップ電極
205…ガス分布アパーチャ
206…第1のRF電源
208…トップシュラウド
210…ボトム電極
212…第2のRF電源
214…基板
216…フォーカスリング
218…シリコンリング
220…絶縁シュラウド
222…穿孔プラズマ閉じ込めリング
224…孔
226…ポート
228…プラズマ
230…距離
500…穿孔プラズマ閉じ込めリング
502…円形の孔
504…スロット状の孔
506…同心円状の孔
Claims (3)
- 半導体の基板を処理するためのプラズマ処理リアクタであって、
トップ電極とボトム電極とを有するチャンバと、
前記チャンバの内側を覆い、処理中において前記チャンバのプラズマ処理空間における側壁をプラズマに対する自由な暴露から守る絶縁シュラウドであって、前記チャンバの前記側壁から離間され、前記処理中において電気的に浮遊するように構成されている絶縁シュラウドと、
前記ボトム電極の外周の外側において、前記ボトム電極の外周を取り囲んで配置され、その外径が前記絶縁シュラウドの内径よりも小さい穿孔プラズマ閉じ込めリングであって、約6.35mmから50.8mmの間の厚さを有し、その全体が前記基板の上面と同じ高さまたは下方に配置され、導電性材料から形成され、前記処理中において電気的に接地されている穿孔プラズマ閉じ込めリングと、
を備える、プラズマ処理リアクタ。 - 請求項1に記載のプラズマ処理リアクタにおいて、前記穿孔プラズマ閉じ込めリングの外周は前記絶縁シュラウドに隣接している、プラズマ処理リアクタ。
- 請求項1または2に記載のプラズマ処理リアクタはさらに、
前記ボトム電極の外周に配置され、前記穿孔プラズマ閉じ込めリングに隣接するフォーカスリングを備え、前記プラズマは、前記フォーカスリング、前記穿孔プラズマ閉じ込めリング、および前記絶縁シュラウドによって、前記処理中において閉じ込められている、プラズマ処理リアクタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/222,588 US6178919B1 (en) | 1998-12-28 | 1998-12-28 | Perforated plasma confinement ring in plasma reactors |
US09/222,588 | 1998-12-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010153155A Division JP5517797B2 (ja) | 1998-12-28 | 2010-07-05 | プラズマリアクタにおける穿孔プラズマ閉じ込めリング |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013175770A JP2013175770A (ja) | 2013-09-05 |
JP5766230B2 true JP5766230B2 (ja) | 2015-08-19 |
Family
ID=22832839
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000591650A Expired - Lifetime JP5013632B2 (ja) | 1998-12-28 | 1999-12-22 | プラズマリアクタにおける穿孔プラズマ閉じ込めリング |
JP2010153155A Expired - Lifetime JP5517797B2 (ja) | 1998-12-28 | 2010-07-05 | プラズマリアクタにおける穿孔プラズマ閉じ込めリング |
JP2013095385A Expired - Lifetime JP5766230B2 (ja) | 1998-12-28 | 2013-04-30 | プラズマ処理リアクタ |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000591650A Expired - Lifetime JP5013632B2 (ja) | 1998-12-28 | 1999-12-22 | プラズマリアクタにおける穿孔プラズマ閉じ込めリング |
JP2010153155A Expired - Lifetime JP5517797B2 (ja) | 1998-12-28 | 2010-07-05 | プラズマリアクタにおける穿孔プラズマ閉じ込めリング |
Country Status (6)
Country | Link |
---|---|
US (2) | US6178919B1 (ja) |
EP (1) | EP1149403B1 (ja) |
JP (3) | JP5013632B2 (ja) |
KR (1) | KR100760243B1 (ja) |
TW (1) | TW443078B (ja) |
WO (1) | WO2000039837A1 (ja) |
Families Citing this family (188)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4217299B2 (ja) * | 1998-03-06 | 2009-01-28 | 東京エレクトロン株式会社 | 処理装置 |
US6184489B1 (en) * | 1998-04-13 | 2001-02-06 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
US6444087B2 (en) * | 1999-01-20 | 2002-09-03 | Hitachi, Ltd. | Plasma etching system |
US6358324B1 (en) * | 1999-04-27 | 2002-03-19 | Tokyo Electron Limited | Microwave plasma processing apparatus having a vacuum pump located under a susceptor |
US20050061445A1 (en) * | 1999-05-06 | 2005-03-24 | Tokyo Electron Limited | Plasma processing apparatus |
KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
JP3379506B2 (ja) * | 2000-02-23 | 2003-02-24 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
US6364958B1 (en) * | 2000-05-24 | 2002-04-02 | Applied Materials, Inc. | Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges |
US6433484B1 (en) * | 2000-08-11 | 2002-08-13 | Lam Research Corporation | Wafer area pressure control |
AUPR008700A0 (en) | 2000-09-13 | 2000-10-05 | Brigatti, John Murray | Biocidal composition |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6492774B1 (en) * | 2000-10-04 | 2002-12-10 | Lam Research Corporation | Wafer area pressure control for plasma confinement |
JP4602532B2 (ja) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4676074B2 (ja) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
US6602381B1 (en) | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
US6974523B2 (en) * | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
KR100884414B1 (ko) * | 2001-05-16 | 2009-02-19 | 램 리서치 코포레이션 | 애노드형 플라즈마 반응기 및 방법 |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
KR100422446B1 (ko) * | 2001-07-12 | 2004-03-12 | 삼성전자주식회사 | 건식식각장치의 이그저스트링 |
US20030024900A1 (en) * | 2001-07-24 | 2003-02-06 | Tokyo Electron Limited | Variable aspect ratio plasma source |
US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
JP2003100713A (ja) * | 2001-09-26 | 2003-04-04 | Kawasaki Microelectronics Kk | プラズマ電極用カバー |
US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
US6744212B2 (en) * | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
US20050120960A1 (en) * | 2002-03-12 | 2005-06-09 | Tokyo Electron Limited | Substrate holder for plasma processing |
US6846747B2 (en) * | 2002-04-09 | 2005-01-25 | Unaxis Usa Inc. | Method for etching vias |
JP4082924B2 (ja) | 2002-04-16 | 2008-04-30 | キヤノンアネルバ株式会社 | 静電吸着ホルダー及び基板処理装置 |
US7175737B2 (en) * | 2002-04-16 | 2007-02-13 | Canon Anelva Corporation | Electrostatic chucking stage and substrate processing apparatus |
US6926803B2 (en) * | 2002-04-17 | 2005-08-09 | Lam Research Corporation | Confinement ring support assembly |
US6936135B2 (en) * | 2002-04-17 | 2005-08-30 | Lam Research Corporation | Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber |
JP2004119448A (ja) * | 2002-09-24 | 2004-04-15 | Nec Kyushu Ltd | プラズマエッチング装置およびプラズマエッチング方法 |
US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
JP4141234B2 (ja) * | 2002-11-13 | 2008-08-27 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
CN1249789C (zh) * | 2002-11-28 | 2006-04-05 | 东京毅力科创株式会社 | 等离子体处理容器内部件 |
US7296534B2 (en) * | 2003-04-30 | 2007-11-20 | Tokyo Electron Limited | Hybrid ball-lock attachment apparatus |
US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
JP2005039004A (ja) * | 2003-07-18 | 2005-02-10 | Hitachi High-Technologies Corp | プラズマエッチング装置およびプラズマエッチング方法 |
US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US20050050708A1 (en) * | 2003-09-04 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded fastener apparatus and method for preventing particle contamination |
US20050061444A1 (en) * | 2003-09-24 | 2005-03-24 | Yoshiaki Noda | Plasma cleaning device |
US7461614B2 (en) * | 2003-11-12 | 2008-12-09 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7180227B2 (en) * | 2004-01-16 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Piezoelectric o-ring transducer |
US7845309B2 (en) * | 2004-07-13 | 2010-12-07 | Nordson Corporation | Ultra high speed uniform plasma processing system |
US20060037702A1 (en) * | 2004-08-20 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US7632375B2 (en) * | 2004-12-30 | 2009-12-15 | Lam Research Corporation | Electrically enhancing the confinement of plasma |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
US7198677B2 (en) * | 2005-03-09 | 2007-04-03 | Wafermasters, Inc. | Low temperature wafer backside cleaning |
US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
JP2006303309A (ja) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
US20070007244A1 (en) * | 2005-07-05 | 2007-01-11 | International Business Machines Corporation | Detection of loss of plasma confinement |
US20070021935A1 (en) | 2005-07-12 | 2007-01-25 | Larson Dean J | Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber |
US8366829B2 (en) * | 2005-08-05 | 2013-02-05 | Advanced Micro-Fabrication Equipment, Inc. Asia | Multi-station decoupled reactive ion etch chamber |
CN100358099C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
US8608851B2 (en) * | 2005-10-14 | 2013-12-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Plasma confinement apparatus, and method for confining a plasma |
CN100416757C (zh) * | 2005-12-07 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置排气环 |
US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
US7632377B2 (en) * | 2006-01-24 | 2009-12-15 | United Microelectronics Corp. | Dry etching apparatus capable of monitoring motion of WAP ring thereof |
US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
US7578258B2 (en) * | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
US8141514B2 (en) * | 2006-03-23 | 2012-03-27 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, and storage medium |
JP4885585B2 (ja) * | 2006-03-23 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
KR100776616B1 (ko) * | 2006-05-04 | 2007-11-15 | 한국기계연구원 | 평판형 저온 플라즈마 반응기 |
US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
US7416677B2 (en) * | 2006-08-11 | 2008-08-26 | Tokyo Electron Limited | Exhaust assembly for plasma processing system and method |
KR100809957B1 (ko) * | 2006-09-20 | 2008-03-07 | 삼성전자주식회사 | 반도체 식각장치 |
US20080194113A1 (en) * | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
US7780866B2 (en) | 2006-11-15 | 2010-08-24 | Applied Materials, Inc. | Method of plasma confinement for enhancing magnetic control of plasma radial distribution |
US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
JP4754465B2 (ja) * | 2006-11-30 | 2011-08-24 | パナソニック株式会社 | プラズマ処理装置およびそのクリーニング方法 |
US20080193673A1 (en) * | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US20080277064A1 (en) * | 2006-12-08 | 2008-11-13 | Tes Co., Ltd. | Plasma processing apparatus |
KR100823302B1 (ko) * | 2006-12-08 | 2008-04-17 | 주식회사 테스 | 플라즈마 처리 장치 |
KR100978754B1 (ko) | 2008-04-03 | 2010-08-30 | 주식회사 테스 | 플라즈마 처리 장치 |
US7758718B1 (en) * | 2006-12-29 | 2010-07-20 | Lam Research Corporation | Reduced electric field arrangement for managing plasma confinement |
JP2008187062A (ja) * | 2007-01-31 | 2008-08-14 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US8647438B2 (en) | 2007-04-27 | 2014-02-11 | Applied Materials, Inc. | Annular baffle |
US7988815B2 (en) * | 2007-07-26 | 2011-08-02 | Applied Materials, Inc. | Plasma reactor with reduced electrical skew using electrical bypass elements |
US20090025879A1 (en) * | 2007-07-26 | 2009-01-29 | Shahid Rauf | Plasma reactor with reduced electrical skew using a conductive baffle |
US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
JP5209954B2 (ja) * | 2007-12-21 | 2013-06-12 | 株式会社ユーテック | 成膜処理用治具及びプラズマcvd装置 |
US8522715B2 (en) * | 2008-01-08 | 2013-09-03 | Lam Research Corporation | Methods and apparatus for a wide conductance kit |
TWI516175B (zh) * | 2008-02-08 | 2016-01-01 | 蘭姆研究公司 | 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體 |
JP2009200184A (ja) * | 2008-02-20 | 2009-09-03 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理装置のバッフル板 |
CN101541140B (zh) * | 2008-03-17 | 2012-08-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理装置及其屏蔽环 |
JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
JP5164107B2 (ja) * | 2008-07-01 | 2013-03-13 | 株式会社ユーテック | プラズマcvd装置、薄膜の製造方法及び磁気記録媒体の製造方法 |
US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
JP5350043B2 (ja) * | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2010245145A (ja) * | 2009-04-02 | 2010-10-28 | Shibaura Mechatronics Corp | プラズマ処理装置 |
US9337004B2 (en) * | 2009-04-06 | 2016-05-10 | Lam Research Corporation | Grounded confinement ring having large surface area |
US8402918B2 (en) * | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
SG169960A1 (en) * | 2009-09-18 | 2011-04-29 | Lam Res Corp | Clamped monolithic showerhead electrode |
JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
JP5397215B2 (ja) * | 2009-12-25 | 2014-01-22 | ソニー株式会社 | 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム |
US8249900B2 (en) * | 2010-02-10 | 2012-08-21 | Morgan Stanley & Co. Llc | System and method for termination of pension plan through mutual annuitization |
US9190289B2 (en) | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
JP5444044B2 (ja) * | 2010-03-02 | 2014-03-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
US20110226739A1 (en) * | 2010-03-19 | 2011-09-22 | Varian Semiconductor Equipment Associates, Inc. | Process chamber liner with apertures for particle containment |
US8597462B2 (en) | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
US8826855B2 (en) | 2010-06-30 | 2014-09-09 | Lam Research Corporation | C-shaped confinement ring for a plasma processing chamber |
JP5597463B2 (ja) * | 2010-07-05 | 2014-10-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US9728429B2 (en) | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
US9155181B2 (en) | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US8999104B2 (en) | 2010-08-06 | 2015-04-07 | Lam Research Corporation | Systems, methods and apparatus for separate plasma source control |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
US9076826B2 (en) | 2010-09-24 | 2015-07-07 | Lam Research Corporation | Plasma confinement ring assembly for plasma processing chambers |
US8471476B2 (en) | 2010-10-08 | 2013-06-25 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
WO2012166265A2 (en) | 2011-05-31 | 2012-12-06 | Applied Materials, Inc. | Apparatus and methods for dry etch with edge, side and back protection |
US8912077B2 (en) * | 2011-06-15 | 2014-12-16 | Applied Materials, Inc. | Hybrid laser and plasma etch wafer dicing using substrate carrier |
US9177762B2 (en) | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US8872525B2 (en) | 2011-11-21 | 2014-10-28 | Lam Research Corporation | System, method and apparatus for detecting DC bias in a plasma processing chamber |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US8898889B2 (en) | 2011-11-22 | 2014-12-02 | Lam Research Corporation | Chuck assembly for plasma processing |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
JP5808012B2 (ja) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9224618B2 (en) * | 2012-01-17 | 2015-12-29 | Lam Research Corporation | Method to increase mask selectivity in ultra-high aspect ratio etches |
CN103377979B (zh) * | 2012-04-30 | 2016-06-08 | 细美事有限公司 | 调节板和具有该调节板的用于处理基板的装置 |
US10103018B2 (en) * | 2012-07-31 | 2018-10-16 | Semes Co., Ltd. | Apparatus for treating substrate |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9401264B2 (en) * | 2013-10-01 | 2016-07-26 | Lam Research Corporation | Control of impedance of RF delivery path |
US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
US11326255B2 (en) * | 2013-02-07 | 2022-05-10 | Uchicago Argonne, Llc | ALD reactor for coating porous substrates |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
JP6220183B2 (ja) * | 2013-08-07 | 2017-10-25 | 株式会社ディスコ | プラズマエッチング装置 |
US9293303B2 (en) * | 2013-08-30 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low contamination chamber for surface activation |
US9101038B2 (en) | 2013-12-20 | 2015-08-04 | Lam Research Corporation | Electrostatic chuck including declamping electrode and method of declamping |
CN103811263B (zh) * | 2014-02-25 | 2016-06-01 | 清华大学 | 等离子体约束装置及具有其的等离子体处理装置 |
US10002782B2 (en) | 2014-10-17 | 2018-06-19 | Lam Research Corporation | ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9793097B2 (en) | 2015-07-27 | 2017-10-17 | Lam Research Corporation | Time varying segmented pressure control |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
CN106920731B (zh) * | 2015-12-28 | 2019-11-08 | 中微半导体设备(上海)股份有限公司 | 一种限制等离子体泄露的接地环以及反应腔 |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
CN108206143B (zh) * | 2016-12-16 | 2020-09-25 | 中微半导体设备(上海)股份有限公司 | 一种等离子处理器、刻蚀均匀性调节系统及方法 |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
GB201709446D0 (en) | 2017-06-14 | 2017-07-26 | Semblant Ltd | Plasma processing apparatus |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
KR102449621B1 (ko) | 2017-08-22 | 2022-09-30 | 삼성전자주식회사 | 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치 |
CN108048814B (zh) * | 2017-12-22 | 2020-01-31 | 凌嘉科技股份有限公司 | 具有反应式离子蚀刻功能的连续式镀膜系统 |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10950449B2 (en) * | 2018-01-12 | 2021-03-16 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
CN208835019U (zh) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | 一种反应腔内衬 |
US10879052B2 (en) * | 2018-11-21 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma processing apparatus and manufacturing method using the same |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
CN111586957B (zh) * | 2019-02-19 | 2021-05-04 | 大连理工大学 | 一种容性耦合等离子体放电装置 |
US20220139661A1 (en) * | 2019-04-01 | 2022-05-05 | One Semicon. Co., Ltd. | Manufacturing method of plasma focus ring for semiconductor etching apparatus |
US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
US11380524B2 (en) | 2020-03-19 | 2022-07-05 | Applied Materials, Inc. | Low resistance confinement liner for use in plasma chamber |
USD979524S1 (en) | 2020-03-19 | 2023-02-28 | Applied Materials, Inc. | Confinement liner for a substrate processing chamber |
USD943539S1 (en) | 2020-03-19 | 2022-02-15 | Applied Materials, Inc. | Confinement plate for a substrate processing chamber |
US20210343508A1 (en) * | 2020-04-30 | 2021-11-04 | Applied Materials, Inc. | Metal oxide preclean chamber with improved selectivity and flow conductance |
CN115249604A (zh) * | 2021-04-26 | 2022-10-28 | 中微半导体设备(上海)股份有限公司 | 限制环、等离子体处理装置及气压控制方法 |
KR102591654B1 (ko) * | 2021-10-20 | 2023-10-19 | ( 주)아이씨디 | 축전 결합 플라즈마 기판 처리 장치 |
KR102606837B1 (ko) * | 2021-11-02 | 2023-11-29 | 피에스케이 주식회사 | 상부 전극 유닛, 그리고 이를 포함하는 기판 처리 장치 |
US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4464223A (en) | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4632719A (en) | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
JPH029115A (ja) | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
US5312778A (en) | 1989-10-03 | 1994-05-17 | Applied Materials, Inc. | Method for plasma processing using magnetically enhanced plasma chemical vapor deposition |
US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
JP3061346B2 (ja) * | 1994-03-07 | 2000-07-10 | 東京エレクトロン株式会社 | 処理装置 |
US5900103A (en) | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
TW299559B (ja) | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US5510042A (en) * | 1994-07-08 | 1996-04-23 | The Procter & Gamble Company | Fabric softening bar compositions containing fabric softener, nonionic phase mofifier and water |
JP3521161B2 (ja) * | 1994-07-09 | 2004-04-19 | 日本たばこ産業株式会社 | ホスホエノールピルビン酸カルボキシキナーゼをコードするdna、それを含む組換えベクター及び形質転換植物 |
US5891350A (en) | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
JP3192370B2 (ja) * | 1995-06-08 | 2001-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JPH09129611A (ja) * | 1995-10-26 | 1997-05-16 | Tokyo Electron Ltd | エッチング方法 |
US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
AU6319796A (en) * | 1996-07-08 | 1998-02-02 | Hitachi Limited | Method of production of semiconductor integrated circuit device |
EP0821395A3 (en) | 1996-07-19 | 1998-03-25 | Tokyo Electron Limited | Plasma processing apparatus |
JP3468446B2 (ja) * | 1997-05-20 | 2003-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6051100A (en) * | 1997-10-24 | 2000-04-18 | International Business Machines Corporation | High conductance plasma containment structure |
US6019060A (en) | 1998-06-24 | 2000-02-01 | Lam Research Corporation | Cam-based arrangement for positioning confinement rings in a plasma processing chamber |
US5998932A (en) | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
-
1998
- 1998-12-28 US US09/222,588 patent/US6178919B1/en not_active Expired - Lifetime
-
1999
- 1999-11-17 TW TW088120084A patent/TW443078B/zh not_active IP Right Cessation
- 1999-12-22 KR KR1020017008021A patent/KR100760243B1/ko active IP Right Grant
- 1999-12-22 JP JP2000591650A patent/JP5013632B2/ja not_active Expired - Lifetime
- 1999-12-22 WO PCT/US1999/030739 patent/WO2000039837A1/en active Application Filing
- 1999-12-22 EP EP99966604.3A patent/EP1149403B1/en not_active Expired - Lifetime
-
2000
- 2000-11-30 US US09/728,733 patent/US6506685B2/en not_active Expired - Lifetime
-
2010
- 2010-07-05 JP JP2010153155A patent/JP5517797B2/ja not_active Expired - Lifetime
-
2013
- 2013-04-30 JP JP2013095385A patent/JP5766230B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2010267981A (ja) | 2010-11-25 |
KR20010089689A (ko) | 2001-10-08 |
WO2000039837A8 (en) | 2001-08-30 |
EP1149403A1 (en) | 2001-10-31 |
KR100760243B1 (ko) | 2007-09-19 |
WO2000039837A1 (en) | 2000-07-06 |
US6506685B2 (en) | 2003-01-14 |
JP2002533949A (ja) | 2002-10-08 |
JP5013632B2 (ja) | 2012-08-29 |
JP5517797B2 (ja) | 2014-06-11 |
JP2013175770A (ja) | 2013-09-05 |
EP1149403B1 (en) | 2016-06-29 |
TW443078B (en) | 2001-06-23 |
US20010000104A1 (en) | 2001-04-05 |
US6178919B1 (en) | 2001-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5766230B2 (ja) | プラズマ処理リアクタ | |
KR100274306B1 (ko) | 에칭방법 | |
JP4657458B2 (ja) | 低容量の誘電体層をエッチングするための技術 | |
US8809199B2 (en) | Method of etching features in silicon nitride films | |
US6136722A (en) | Plasma etching method for forming hole in masked silicon dioxide | |
KR100842947B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
JP3905232B2 (ja) | エッチング方法 | |
KR101540816B1 (ko) | 플라즈마 에칭 방법, 컴퓨터 기억 매체 및 플라즈마 에칭 장치 | |
US20040222190A1 (en) | Plasma processing method | |
JPS6136589B2 (ja) | ||
KR101065240B1 (ko) | 플라즈마 처리 시스템에서의 에칭 동안 포토레지스트일그러짐을 감소시키는 방법 | |
JP4387801B2 (ja) | 半導体ウェーハの乾式蝕刻方法 | |
KR20180124754A (ko) | 에칭 방법 | |
JP2005123550A (ja) | 異方性エッチング方法 | |
JP4643916B2 (ja) | 層間絶縁膜のドライエッチング方法及びその装置 | |
JP2917993B1 (ja) | ドライエッチング方法 | |
JP3002033B2 (ja) | ドライエッチング方法 | |
TWI753413B (zh) | 電漿處理方法 | |
US6432730B2 (en) | Plasma processing method and apparatus | |
JP7202489B2 (ja) | プラズマ処理方法 | |
JPH0758087A (ja) | プラズマ処理装置 | |
JP3082702B2 (ja) | プラズマ処理装置及び金属配線のエッチング方法 | |
JP2023101120A (ja) | イオンミリング源、真空処理装置、及び真空処理方法 | |
JPH0637046A (ja) | プラズマエッチング装置 | |
JPH11354494A (ja) | エッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130530 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130530 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130708 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140408 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140707 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141202 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150311 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150318 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150519 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150616 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5766230 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |