KR100721788B1 - 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 - Google Patents

전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 Download PDF

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Publication number
KR100721788B1
KR100721788B1 KR1020010002409A KR20010002409A KR100721788B1 KR 100721788 B1 KR100721788 B1 KR 100721788B1 KR 1020010002409 A KR1020010002409 A KR 1020010002409A KR 20010002409 A KR20010002409 A KR 20010002409A KR 100721788 B1 KR100721788 B1 KR 100721788B1
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South Korea
Prior art keywords
group
acid
groups
rays
resist composition
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KR1020010002409A
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Korean (ko)
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KR20010088321A (ko
Inventor
아데가와유타카
우에니시가즈야
시라카와고지
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020010002409A 2000-01-17 2001-01-16 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 Expired - Lifetime KR100721788B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000-008229 2000-01-17
JP2000008229 2000-01-17
JP2000-151477 2000-05-23
JP2000151477 2000-05-23
JP2000-235949 2000-08-03
JP2000235949A JP4070393B2 (ja) 2000-01-17 2000-08-03 ネガ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20010088321A KR20010088321A (ko) 2001-09-26
KR100721788B1 true KR100721788B1 (ko) 2007-05-25

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KR1020010002409A Expired - Lifetime KR100721788B1 (ko) 2000-01-17 2001-01-16 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물

Country Status (6)

Country Link
US (1) US6673512B1 (https=)
EP (1) EP1117002B1 (https=)
JP (1) JP4070393B2 (https=)
KR (1) KR100721788B1 (https=)
DE (1) DE60141783D1 (https=)
TW (1) TW581934B (https=)

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WO2002018332A1 (fr) * 2000-08-30 2002-03-07 Wako Pure Chemical Industries, Ltd. Compose de sel de sulfonium
JP4194259B2 (ja) 2000-08-31 2008-12-10 富士フイルム株式会社 ネガ型レジスト組成物
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
US20030054287A1 (en) * 2001-04-13 2003-03-20 Fuji Photo Film Co., Ltd. Resist composition
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
TWI242689B (en) * 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
JP2003043679A (ja) * 2001-07-31 2003-02-13 Jsr Corp 感放射線性樹脂組成物
JP3790960B2 (ja) * 2001-10-19 2006-06-28 富士写真フイルム株式会社 ネガ型レジスト組成物
US20030235777A1 (en) * 2001-12-31 2003-12-25 Shipley Company, L.L.C. Phenolic polymers, methods for synthesis thereof and photoresist compositions comprising same
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
KR100698444B1 (ko) * 2002-03-22 2007-03-23 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법
JP3841405B2 (ja) 2002-03-29 2006-11-01 富士写真フイルム株式会社 ネガ型レジスト組成物
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4213925B2 (ja) * 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
JP4070538B2 (ja) * 2002-08-19 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
JP2004258070A (ja) * 2003-02-24 2004-09-16 Sumitomo Chem Co Ltd ポジ型感光性組成物
CN1698016A (zh) * 2003-05-20 2005-11-16 东京应化工业株式会社 化学放大型正性光致抗蚀剂组合物及抗蚀图案的形成方法
WO2004104703A1 (ja) 2003-05-22 2004-12-02 Tokyo Ohka Kogyo Co., Ltd. 化学増幅型ポジ型ホトレジスト組成物及びレジストパターン形成方法
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
JP4476680B2 (ja) * 2004-04-20 2010-06-09 東京応化工業株式会社 インプランテーション工程用化学増幅型ポジ型ホトレジスト組成物
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4245172B2 (ja) * 2005-12-02 2009-03-25 株式会社日立製作所 パターン形成用基材、ネガ型レジスト組成物、パターン形成方法、および半導体装置
JP4617252B2 (ja) * 2005-12-22 2011-01-19 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008120700A (ja) * 2006-11-08 2008-05-29 San Apro Kk スルホニウム塩
KR100904068B1 (ko) 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
US8715918B2 (en) * 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
JP5656413B2 (ja) * 2009-01-30 2015-01-21 富士フイルム株式会社 ネガ型レジストパターン形成方法、それに用いられる現像液及びネガ型化学増幅型レジスト組成物、並びにレジストパターン
JP5472072B2 (ja) * 2010-01-13 2014-04-16 信越化学工業株式会社 ネガ型レジスト組成物及びパターン形成方法
JP5858987B2 (ja) * 2010-05-04 2016-02-10 エルジー・ケム・リミテッド ネガティブフォトレジスト組成物および素子のパターニング方法
JP6247858B2 (ja) * 2013-08-01 2017-12-13 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
US9872399B1 (en) * 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
JP7647655B2 (ja) * 2021-05-07 2025-03-18 信越化学工業株式会社 レジスト材料及びパターン形成方法

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JPH1016423A (ja) * 1996-07-01 1998-01-20 Fuji Photo Film Co Ltd ネガ型画像記録材料
JPH10333323A (ja) * 1997-06-04 1998-12-18 Jsr Corp 感放射線性樹脂組成物
JPH11125907A (ja) * 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物

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JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
JP2655370B2 (ja) * 1991-08-14 1997-09-17 富士写真フイルム株式会社 感光性組成物
JP3016231B2 (ja) * 1991-11-15 2000-03-06 ジェイエスアール株式会社 ネガ型レジスト組成物
JPH0667431A (ja) 1992-08-20 1994-03-11 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
JPH06199770A (ja) 1992-12-28 1994-07-19 Japan Synthetic Rubber Co Ltd 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物
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Publication number Priority date Publication date Assignee Title
JPH1016423A (ja) * 1996-07-01 1998-01-20 Fuji Photo Film Co Ltd ネガ型画像記録材料
JPH10333323A (ja) * 1997-06-04 1998-12-18 Jsr Corp 感放射線性樹脂組成物
JPH11125907A (ja) * 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物

Also Published As

Publication number Publication date
DE60141783D1 (de) 2010-05-27
EP1117002B1 (en) 2010-04-14
JP4070393B2 (ja) 2008-04-02
US6673512B1 (en) 2004-01-06
KR20010088321A (ko) 2001-09-26
TW581934B (en) 2004-04-01
EP1117002A1 (en) 2001-07-18
JP2002049151A (ja) 2002-02-15

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